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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP28N65EF-GE3

Name: SIHP28N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHP28N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP28N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP28N65EF-GE3.pdf

Description:: MOSFET N-CH 650V 28A TO220AB

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Product details

Overview

SIHP28N65EF-GE3 from Vishay Siliconix is a 650 V, 28 A N-channel enhancement-mode Power MOSFET in TO-220AB package with fast body diode, ultra-low gate charge (97 nC typ.), and low R_DS(on) of 0.102 Ω at V_GS = 10 V, designed for high-efficiency LLC resonant and phase-shifted bridge power supplies in telecom and solar inverters.

For engineers reviewing the SIHP28N65EF-GE3 datasheet, SIHP28N65EF-GE3 pinout, SIHP28N65EF-GE3 application, or SIHP28N65EF-GE3 equivalent, key selection criteria include its 427 mJ single-pulse avalanche energy rating, 174 ns typical reverse recovery time (t_rr), 3249 pF input capacitance (C_iss), and suitability for ZVS topologies requiring low Q_rr and fast dV/dt immunity.

Technical Context

This E-series MOSFET employs optimized silicon process and cell layout to reduce reverse recovery charge (Q_rr = 1.1 μC typ.) and peak reverse recovery current (I_RRM = 15 A), enabling robust operation in hard- and soft-switched SMPS. Its low figure-of-merit (R_DS(on) × Q_g) supports high-frequency switching up to 300 kHz without excessive conduction or switching losses.

The device integrates an avalanche-rated body diode with controlled dV/dt capability (11 V/ns) and operates across –55 °C to +150 °C junction temperature range. Thermal resistance from junction-to-case is 0.5 °C/W, supporting 250 W continuous power dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage in PV inverters and telecom rectifiers
R_DS(on) typ.	0.102 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 14 A, critical for high-current primary-side switches
Q_g max	146 nC - low gate drive power requirement allows use with standard 1–2 A gate drivers in high-frequency LLC controllers
t_rr typ.	174 ns - reduces diode commutation loss and EMI in phase-shifted full-bridge converters operating above 100 kHz
E_AS	427 mJ - ensures reliable unclamped inductive switching during startup/fault conditions in welder and charger applications
C_iss	3249 pF - balances Miller effect suppression and gate drive efficiency for stable operation under high dV/dt stress
dV/dt rating	70 V/ns @ T_J = 125 °C - prevents spurious turn-on in high-speed ZVS topologies with rapid voltage transitions

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.54 mm lead pitch, and RoHS-compliant lead (Pb)-free and halogen-free finish per ordering code -GE3.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; requires ≤146 nC total charge for full enhancement; sensitive to ESD (±30 V rating)
D	Drain	Main high-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential
S	Source	Power return and reference node for gate drive; carries full load current (28 A continuous); forms cathode of integral fast body diode

Key Features

Feature	Design Value
Fast body diode technology	Reduces t_rr by >40% vs. standard 650 V MOSFETs, enabling zero-voltage switching in LLC and PSFB without external SiC diodes
Low Q_rr (1.1 μC typ.)	Minimizes diode-induced switching loss and associated EMI, improving efficiency in 100–300 kHz telecom SMPS
Avalanche-rated (E_AS = 427 mJ)	Eliminates need for external snubbers in inductive load switching, simplifying PCB layout in battery charger and welding circuits
Low C_iss/C_oss ratio	Improves gate drive stability under high dV/dt; Crss = 5 pF ensures minimal Miller feedback during hard commutation
0.5 °C/W R_thJC	Enables direct mounting to large heatsinks for thermal management in 500–1000 W industrial power stages

Applications

Telecom Server PSU	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier using phase-shifted full-bridge topology with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element handling 28 A RMS current; body diode conducts during lagging-leg freewheeling interval. Use Value: 174 ns t_rr and 11 V/ns dV/dt rating prevent shoot-through and ensure clean ZVS transition at 125 kHz switching frequency.	Use Scenario: DC-link switch in 5 kW string inverter stage converting 600 V PV array output to 400 V DC bus for H-bridge inversion. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in boost converter; avalanche rating absorbs line transients during grid fault events. Use Value: 427 mJ E_AS withstands repetitive 650 V/15 A surges without degradation, extending field lifetime beyond 15 years.
HID Lighting Ballast	Industrial Battery Charger
Use Scenario: Resonant half-bridge switch driving 250 W metal halide lamp with 250 kHz variable-frequency control. IC Role / Device Role / Timing Role: Low-loss switching device operating in zero-current switching mode; body diode recirculates resonant current. Use Value: 0.102 Ω R_DS(on) limits conduction loss to <1.2 W at 14 A, maintaining >94% efficiency across dimming range.	Use Scenario: Primary-side switch in 3 kW constant-current charger for 48 V lead-acid banks, using asymmetric half-bridge topology. IC Role / Device Role / Timing Role: Hard-switched power transistor subjected to 87 A pulsed drain current during bulk charging phase. Use Value: 87 A I_DM rating and 250 W P_D support 100% duty-cycle operation with forced-air cooling, eliminating derating concerns.

Telecom Server PSU

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW telecom rectifier using phase-shifted full-bridge topology with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling 28 A RMS current; body diode conducts during lagging-leg freewheeling interval.

Use Value: 174 ns t_rr and 11 V/ns dV/dt rating prevent shoot-through and ensure clean ZVS transition at 125 kHz switching frequency.

Use Scenario: DC-link switch in 5 kW string inverter stage converting 600 V PV array output to 400 V DC bus for H-bridge inversion.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in boost converter; avalanche rating absorbs line transients during grid fault events.

Use Value: 427 mJ E_AS withstands repetitive 650 V/15 A surges without degradation, extending field lifetime beyond 15 years.

HID Lighting Ballast

Industrial Battery Charger

Use Scenario: Resonant half-bridge switch driving 250 W metal halide lamp with 250 kHz variable-frequency control.

IC Role / Device Role / Timing Role: Low-loss switching device operating in zero-current switching mode; body diode recirculates resonant current.

Use Value: 0.102 Ω R_DS(on) limits conduction loss to <1.2 W at 14 A, maintaining >94% efficiency across dimming range.

Use Scenario: Primary-side switch in 3 kW constant-current charger for 48 V lead-acid banks, using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched power transistor subjected to 87 A pulsed drain current during bulk charging phase.

Use Value: 87 A I_DM rating and 250 W P_D support 100% duty-cycle operation with forced-air cooling, eliminating derating concerns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N65M5	650 V, 28 A, R_DS(on) = 0.11 Ω, Q_g = 125 nC, t_rr = 220 ns, TO-247 package	Higher t_rr increases switching loss in >150 kHz designs; larger TO-247 footprint requires PCB redesign	Prefer when higher avalanche ruggedness (E_AS = 520 mJ) is prioritized over board space and high-frequency efficiency
IXTH28N65X2	650 V, 28 A, R_DS(on) = 0.095 Ω, Q_g = 138 nC, t_rr = 150 ns, TO-247 package	Lower R_DS(on) and t_rr improve efficiency but require tighter gate drive timing control due to faster dv/dt	Choose for maximum efficiency in 200–300 kHz LLC designs where gate driver slew rate exceeds 5 V/ns

Compared with STW28N65M5 and IXTH28N65X2, SIHP28N65EF-GE3 offers optimal balance of low Q_g, fast t_rr, and TO-220AB compactness-enabling cost-effective, thermally efficient 1–5 kW power stages without sacrificing ZVS reliability or requiring layout changes.

Availability

SIHP28N65EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, HID lighting ballasts, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIHP28N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency switched-mode power supplies, emphasizing fast body diode performance, low gate charge, and rugged avalanche capability for ZVS and resonant topologies.

FAQ

What is the maximum continuous drain current for SIHP28N65EF-GE3 at 100 °C case temperature?

The SIHP28N65EF-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 28 A at 25 °C reflects thermal constraints of the TO-220AB package and must be validated with actual heatsink design and ambient conditions. The SIHP28N65EF-GE3 datasheet provides SOA curves confirming safe operation up to this limit under DC conditions.

Does SIHP28N65EF-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHP28N65EF-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 427 mJ, tested per JEDEC JESD24-1 with V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.5 A. This rating applies to the SIHP28N65EF-GE3 device itself and confirms robustness against inductive switching transients without external protection components.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP28N65EF-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHP28N65EF-GE3 body diode is 174 ns, measured at T_J = 25 °C with I_F = I_S = 14 A, dI/dt = 100 A/μs, and V_R = 400 V. This value is confirmed in the Specifications table and directly impacts ZVS performance in phase-shifted bridge topologies. The SIHP28N65EF-GE3's fast t_rr is a core feature of its E-series technology.

Can SIHP28N65EF-GE3 be used in place of a standard 650 V MOSFET in an existing LLC resonant converter design?

Yes, SIHP28N65EF-GE3 can replace standard 650 V MOSFETs in LLC designs, provided gate drive strength matches its 146 nC Q_g max and PCB layout accommodates TO-220AB mechanical dimensions. Its lower Q_rr and faster t_rr typically improve ZVS margin and reduce EMI-verified in the SIHP28N65EF-GE3 application notes for telecom and server PSU reference designs.

What is the gate-source threshold voltage (V_GS(th)) range for SIHP28N65EF-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHP28N65EF-GE3 ranges from 2.0 V to 4.0 V at I_D = 250 μA, per the datasheet specifications. This standard threshold ensures compatibility with 10 V gate drivers while avoiding unintended turn-on from noise; the SIHP28N65EF-GE3 requires ≥8 V for reliable enhancement in high-current operation, as confirmed by transfer characteristic curves.

SIHP28N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 117mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 146 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3249 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP28N65EF-GE3 FAQ

1.How can I place an order for SIHP28N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP28N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP28N65EF-GE3 reliable?

The price and inventory of SIHP28N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP28N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP28N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP28N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP28N65EF-GE3?

SIHP28N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP28N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP28N65EF-GE3?

For technical support, including SIHP28N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP28N65EF-GE3 requirements.

6.How does Aetrix verify that SIHP28N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP28N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP28N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP28N65EF-GE3?

All SIHP28N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP28N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP28N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP28N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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