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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP28N65E-GE3

Name: SIHP28N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP28N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP28N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP28N65E-GE3.pdf

Description:: MOSFET N-CH 650V 29A TO220AB

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Product details

Overview

SIHP28N65E-GE3 from Vishay Siliconix is a 650 V, 29 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.097 Ω R_DS(on) at V_GS = 10 V, 93 nC typical Q_g, and 427 mJ single-pulse avalanche energy - designed for high-efficiency switch-mode power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHP28N65E-GE3 datasheet, SIHP28N65E-GE3 pinout, SIHP28N65E-GE3 application, or SIHP28N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, robust UIS rating, and thermal performance with R_thJC = 0.5 °C/W - critical for high-power density industrial and telecom power designs.

Technical Context

This E-Series MOSFET employs planar stripe silicon technology optimized for hard-switched 650 V applications. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while low C_iss (3405 pF) and C_oss (160 pF) minimize switching losses in continuous conduction mode (CCM) PFC and LLC resonant converters.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with t_rr = 483 ns (typ.) and Q_rr = 8 μC at 25 °C - enabling stable operation in high-dV/dt environments up to 70 V/ns without external snubbing in well-layout-controlled topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % margin for transient overvoltage in telecom and server PSUs
R_DS(on) typ	0.097 Ω at V_GS = 10 V - enables <1.4 W conduction loss at 14 A, reducing heatsink requirements in 1–3 kW systems
Q_g max	140 nC - allows efficient drive with standard gate drivers (e.g., UCC27531) without excessive Miller plateau time
E_AS	427 mJ - withstands unclamped inductive energy in motor drives and welding equipment without failure
R_thJC	0.5 °C/W - delivers 250 W power dissipation capability with minimal junction-to-case thermal rise under forced-air cooling
C_iss	3405 pF - reduces gate drive power and improves high-frequency switching stability in >100 kHz SMPS
t_r/t_f	42/45 ns (typ.) - supports fast transition control in ZVS/ZCS topologies while limiting EMI generation

Pinout & Package

TO-220AB package with isolated drain tab (pin 2), standard 3-pin through-hole mounting, and JEDEC-compliant mechanical dimensions (D = 14.33–15.85 mm, E = 9.96–10.52 mm). Mounting requires thermal interface material and mechanical torque ≤ 0.5 N·m.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground or low-side current sense point
Pin 2 (Drain)	Drain terminal (tab-connected)	High-voltage power path; electrically tied to metal tab - must be insulated from heatsink unless referenced to system ground
Pin 3 (Gate)	Control input for channel conduction	High-impedance CMOS-compatible input; requires <100 nA leakage handling and low-inductance gate loop layout

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	9.4 Ω·nC - directly reduces total switching + conduction loss in high-frequency PFC and DC-DC stages
Avalanche-rated (UIS)	427 mJ single-pulse - eliminates need for external clamping in inductive load switching and fault-tolerant designs
Low C_iss and C_oss	3405 pF / 160 pF - minimizes capacitive loading on gate driver and improves dV/dt immunity during commutation
Enhanced body diode performance	t_rr = 483 ns, Q_rr = 8 μC - reduces reverse recovery loss and associated EMI in bridge-leg configurations
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration (Doc. #99912)

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and ATX server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant converter primary leg. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, enabling >96 % efficiency at full load with minimal thermal derating.	Use Scenario: DC-AC stage in string inverters converting 600–1000 V DC from photovoltaic arrays into grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET half-bridge modules driving transformerless inverter topologies. Use Value: 650 V rating with 427 mJ E_AS ensures safe operation during grid fault transients and islanding events without desaturation protection.
Industrial Motor Drive	PFC Front-End
Use Scenario: Inverter output stage in 5–15 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-loss switching element in 2-level or 3-level NPC inverter legs handling 400–690 V AC line inputs. Use Value: R_thJC = 0.5 °C/W enables direct heatsink mounting with <10 K/W system thermal resistance, supporting continuous 18 A operation at 100 °C case temperature.	Use Scenario: Boost switch in active PFC circuits for LED drivers, medical power supplies, and industrial AC-DC converters. IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor operating in CCM at 65–100 kHz. Use Value: Low C_oss (160 pF) and Q_gd (38 nC) suppress voltage overshoot and reduce dead-time losses, improving THD and PF correction accuracy.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and ATX server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant converter primary leg.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, enabling >96 % efficiency at full load with minimal thermal derating.

Use Scenario: DC-AC stage in string inverters converting 600–1000 V DC from photovoltaic arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET half-bridge modules driving transformerless inverter topologies.

Use Value: 650 V rating with 427 mJ E_AS ensures safe operation during grid fault transients and islanding events without desaturation protection.

Industrial Motor Drive

PFC Front-End

Use Scenario: Inverter output stage in 5–15 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-loss switching element in 2-level or 3-level NPC inverter legs handling 400–690 V AC line inputs.

Use Value: R_thJC = 0.5 °C/W enables direct heatsink mounting with <10 K/W system thermal resistance, supporting continuous 18 A operation at 100 °C case temperature.

Use Scenario: Boost switch in active PFC circuits for LED drivers, medical power supplies, and industrial AC-DC converters.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor operating in CCM at 65–100 kHz.

Use Value: Low C_oss (160 pF) and Q_gd (38 nC) suppress voltage overshoot and reduce dead-time losses, improving THD and PF correction accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N65M5	R_DS(on) = 0.095 Ω (typ.), Q_g = 105 nC, TO-247 package, no UIS rating specified	Larger footprint and higher gate drive current demand; lacks avalanche qualification for inductive fault tolerance	Preferred where board space permits TO-247 and avalanche robustness is not required
IXTH28N65X2	R_DS(on) = 0.092 Ω (typ.), Q_g = 120 nC, HiPerFET™ Gen. 2, TO-247, E_AS = 410 mJ	Higher cost, same voltage rating but slightly better conduction loss; identical avalanche capability within measurement tolerance	Selected when legacy design uses IXYS footprint or requires Gen. 2 process consistency

Compared with STW28N65M5 and IXTH28N65X2, SIHP28N65E-GE3 offers best-in-class FOM (9.4 Ω·nC), certified UIS rating, and TO-220AB compatibility - making it optimal for cost-sensitive, space-constrained 650 V power stages requiring proven ruggedness.

Availability

SIHP28N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHP28N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP28N65E-GE3 belongs to Vishay's E-Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switch-mode power conversion in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHP28N65E-GE3 at 100 °C case temperature?

The SIHP28N65E-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 29 A rating at 25 °C, based on R_thJC = 0.5 °C/W and junction temperature limit of 150 °C. Designers must verify heatsink performance to maintain safe operation under sustained load.

Does SIHP28N65E-GE3 have avalanche capability, and how is it rated?

Yes, SIHP28N65E-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy of 427 mJ, tested per JEDEC standard JESD24-1. The rating is measured at V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.5 A. This confirms ruggedness for inductive load switching and fault conditions without external protection.

What is the gate threshold voltage range for SIHP28N65E-GE3, and why does it matter?

The gate threshold voltage (V_GS(th)) for SIHP28N65E-GE3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. It also supports compatibility with microcontroller GPIOs (with level-shifting) and simplifies drive circuit design in cost-sensitive applications.

Can SIHP28N65E-GE3 be used in place of logic-level MOSFETs?

No - SIHP28N65E-GE3 is not a logic-level device. Its V_GS(th) minimum is 2 V, but it requires V_GS = 10 V to achieve rated R_DS(on) = 0.097 Ω. Logic-level MOSFETs typically specify R_DS(on) at V_GS = 4.5 V or 5 V. Using SIHP28N65E-GE3 with only 5 V gate drive results in significantly higher on-resistance (>0.3 Ω) and unacceptable conduction loss.

What is the reverse recovery charge (Q_rr) of the body diode in SIHP28N65E-GE3, and how does it affect design?

The SIHP28N65E-GE3 body diode has Q_rr = 8–16 μC (typ./max) at T_J = 25 °C, I_F = 14 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts switching loss and EMI in synchronous rectification and half-bridge configurations. Lower Q_rr reduces tail current and associated heat generation, allowing tighter dead-time control and improved efficiency in high-frequency topologies.

SIHP28N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 112mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3405 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP28N65E-GE3 FAQ

1.How can I place an order for SIHP28N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP28N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP28N65E-GE3 reliable?

The price and inventory of SIHP28N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP28N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP28N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP28N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP28N65E-GE3?

SIHP28N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP28N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP28N65E-GE3?

For technical support, including SIHP28N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP28N65E-GE3 requirements.

6.How does Aetrix verify that SIHP28N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP28N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP28N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP28N65E-GE3?

All SIHP28N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP28N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP28N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP28N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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