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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP30N60AEL-GE3

Name: SIHP30N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHP30N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP30N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP30N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 28A TO220AB

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Product details

Overview

SIHP30N60AEL-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.105 Ω R_DS(on) at V_GS = 10 V, 60 nC typical total gate charge, and 353 mJ single-pulse avalanche energy rating. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-DC converters.

For engineers reviewing the SIHP30N60AEL-GE3 datasheet, SIHP30N60AEL-GE3 pinout, SIHP30N60AEL-GE3 application, or SIHP30N60AEL-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (10.5 Ω·nC), 32 V/ns diode dv/dt capability, and 0.5 °C/W junction-to-case thermal resistance for high-power density designs.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss and fast switching performance. Its 600 V V_DS rating supports operation across universal AC input ranges up to 400 V DC bus, while the 150 °C maximum junction temperature enables high-temperature industrial environments.

The device integrates an avalanche-rated body diode with 335 ns typical reverse recovery time and 5.4 μC Q_rr, enabling robust unclamped inductive switching in hard-switched topologies. Gate drive requirements are defined by 14 nC Q_gs and 19 nC Q_gd, supporting efficient control with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus with 50 % safety margin in telecom/server PSUs
R_DS(on) typ @ 10 V	0.105 Ω - Enables ≤ 2.3 W conduction loss at 15 A continuous drain current
Q_g typ	60 nC - Reduces gate drive power and allows use of lower-current gate drivers
E_AS	353 mJ - Withstands repetitive unclamped inductive switching without failure
R_thJC	0.5 °C/W - Permits 250 W power dissipation with ≤ 125 °C case-to-ambient delta
C_iss	2565 pF - Low input capacitance improves turn-on speed and reduces Miller effect
V_GS(th)	2.0–4.0 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drives

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.6 mm creepage distance per IEC 60950-1. Thermal pad on drain terminal enables direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive signal; requires <1.45 Ω gate resistance to limit ringing
D (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to metal tab for thermal path
S (Source)	Reference node / return path	Provides ground reference for gate drive and current sensing; connects to low-side switch or shunt

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	10.5 Ω·nC - Directly reduces combined conduction + switching losses in high-frequency SMPS
Avalanche energy rated	353 mJ - Eliminates need for external snubbers in flyback and resonant converter primary switches
Ultra-low Q_gd/Q_g ratio	32 % - Minimizes Miller plateau duration and improves hard-switching robustness
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - Suitable for green manufacturing
Body diode dV/dt ruggedness	32 V/ns - Prevents spurious turn-on during high-di/dt commutation in bridge configurations

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in LLC resonant converter delivering 1.5 kW output with >96 % efficiency. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier replacement in half-bridge topology operating at 200–500 kHz. Use Value: 0.105 Ω R_DS(on) and 60 nC Q_g reduce total losses by 1.8 W vs. legacy 650 V MOSFETs at 15 A load.	Use Scenario: DC-DC boost stage in string-level PV inverter handling 1000 V open-circuit voltage. IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with 100 kHz switching frequency. Use Value: 353 mJ E_AS withstands lightning-induced transients without derating, extending field lifetime.
Industrial Motor Drive	Telecom Rectifier
Use Scenario: Inverter leg switch in 3-phase 7.5 kW servo drive with active front-end PFC. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz PWM motor control with regenerative braking. Use Value: 32 V/ns body diode dv/dt rating prevents false triggering during rapid bus voltage transitions.	Use Scenario: Active clamp forward converter in 48 V telecom rectifier delivering 2000 W with -48 V output. IC Role / Device Role / Timing Role: Clamp switch managing leakage inductance energy in high-efficiency telecom PSU. Use Value: 0.5 °C/W R_thJC enables 250 W dissipation with passive heatsinking, reducing fan dependency.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in LLC resonant converter delivering 1.5 kW output with >96 % efficiency.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier replacement in half-bridge topology operating at 200–500 kHz.

Use Value: 0.105 Ω R_DS(on) and 60 nC Q_g reduce total losses by 1.8 W vs. legacy 650 V MOSFETs at 15 A load.

Use Scenario: DC-DC boost stage in string-level PV inverter handling 1000 V open-circuit voltage.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with 100 kHz switching frequency.

Use Value: 353 mJ E_AS withstands lightning-induced transients without derating, extending field lifetime.

Industrial Motor Drive

Telecom Rectifier

Use Scenario: Inverter leg switch in 3-phase 7.5 kW servo drive with active front-end PFC.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz PWM motor control with regenerative braking.

Use Value: 32 V/ns body diode dv/dt rating prevents false triggering during rapid bus voltage transitions.

Use Scenario: Active clamp forward converter in 48 V telecom rectifier delivering 2000 W with -48 V output.

IC Role / Device Role / Timing Role: Clamp switch managing leakage inductance energy in high-efficiency telecom PSU.

Use Value: 0.5 °C/W R_thJC enables 250 W dissipation with passive heatsinking, reducing fan dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 28 A, R_DS(on) = 0.115 Ω, Q_g = 65 nC, TO-247 package	Higher thermal resistance (0.75 °C/W) requires larger heatsink; no avalanche rating specified	Preferred where higher peak current (IDM = 112 A) is needed, but not for avalanche-critical designs
IXTH30N60L2	600 V, 30 A, R_DS(on) = 0.12 Ω, Q_g = 42 nC, TO-247 package	Lower Q_g improves switching efficiency but lacks UIS rating and has higher R_DS(on)	Optimal for high-frequency ZVS/ZCS topologies where avalanche stress is absent

Compared with STW30NM60ND and IXTH30N60L2, SIHP30N60AEL-GE3 delivers superior avalanche ruggedness and lower conduction loss in TO-220AB form factor, making it ideal for cost-sensitive, space-constrained industrial and telecom power supplies requiring proven unclamped inductive reliability.

Availability

SIHP30N60AEL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHP30N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The EL Series Power MOSFETs, including SIHP30N60AEL-GE3, were engineered for high-efficiency, high-reliability switching in industrial-grade power conversion systems operating up to 150 °C junction temperature.

FAQ

What is the maximum continuous drain current for SIHP30N60AEL-GE3 at 100 °C case temperature?

The SIHP30N60AEL-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the TO-220AB package's 0.5 °C/W R_thJC and ambient cooling conditions. At 25 °C case temperature, the rating increases to 28 A.

Does SIHP30N60AEL-GE3 have a fully rated avalanche capability?

Yes, SIHP30N60AEL-GE3 is fully rated for unclamped inductive switching with a guaranteed 353 mJ single-pulse avalanche energy (E_AS) under standardized test conditions (V_DD = 120 V, L = 28.2 mH, I_AS = 5 A). This rating is validated per JEDEC JESD24-1 and ensures reliability in flyback, forward, and resonant converter primary switches.

What is the gate threshold voltage range for SIHP30N60AEL-GE3?

The SIHP30N60AEL-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This ensures consistent enhancement-mode turn-on behavior across process and temperature variations, compatible with standard 10 V gate drivers and microcontroller GPIO outputs.

Can SIHP30N60AEL-GE3 be used in PFC circuits?

Yes, SIHP30N60AEL-GE3 is explicitly listed for Power Factor Correction (PFC) power supplies in its Applications section. Its 600 V V_DS, low Q_g, and 0.105 Ω R_DS(on) make it suitable for boost PFC stages operating at 100–200 kHz, especially where high efficiency and thermal performance are critical in 1–3 kW systems.

Is SIHP30N60AEL-GE3 lead (Pb)-free and halogen-free?

Yes, SIHP30N60AEL-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and JEDEC JS709C standards. The "-GE3" suffix denotes Vishay's green packaging standard, including matte tin-plated leads and halogen-free molding compound.

SIHP30N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2565 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP30N60AEL-GE3 FAQ

1.How can I place an order for SIHP30N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP30N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP30N60AEL-GE3 reliable?

The price and inventory of SIHP30N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP30N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP30N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP30N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP30N60AEL-GE3?

SIHP30N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP30N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP30N60AEL-GE3?

For technical support, including SIHP30N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP30N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHP30N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP30N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP30N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP30N60AEL-GE3?

All SIHP30N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP30N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP30N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHP30N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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