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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP30N60E-GE3

Name: SIHP30N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP30N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP30N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP30N60E-GE3.pdf

Description:: MOSFET N-CH 600V 29A TO220AB

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Product details

Overview

SIHP30N60E-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.125 Ω @ V_GS = 10 V, Q_g = 130 nC, and avalanche-rated (E_AS = 690 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP30N60E-GE3 datasheet, SIHP30N60E-GE3 pinout, SIHP30N60E-GE3 application, or SIHP30N60E-GE3 equivalent, key selection criteria include its 600 V blocking rating, ultra-low gate charge, rugged body diode with t_rr = 605 ns, and thermal resistance R_thJC = 0.5 °C/W - critical for high-power density, thermally constrained designs.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility. The low C_iss (2600 pF) and C_oss (138 pF) reduce Miller effect and improve turn-off controllability under high dV/dt conditions.

The integrated body diode supports unclamped inductive switching with rated E_AS = 690 mJ and reverse recovery parameters (Q_rr = 15 μC, t_rr = 605 ns), making it suitable for freewheeling and synchronous rectification roles in continuous conduction mode topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin against transients in PFC and industrial inverters
R_DS(on) max @ 25 °C	0.125 Ω - limits conduction loss to ≤17.6 W at 15 A, enabling compact heatsink sizing in 1–3 kW systems
Q_g max	130 nC - reduces gate driver power demand and enables efficient operation at 100–300 kHz switching frequencies
E_AS	690 mJ - withstands single-pulse inductive energy without failure, eliminating need for external snubbers in flyback or LLC resonant converters
R_thJC	0.5 °C/W - allows direct mounting to heatsink with minimal thermal interface resistance, supporting 250 W continuous dissipation at T_C = 100 °C
t_rr	605 ns - minimizes diode reverse recovery loss and associated EMI in hard-switched bridge legs and boost converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal path optimized via metal tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 0–10 V logic-level gate drive; requires <130 nC charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	High-side power output	Connected to internal die substrate and metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return / reference node	Serves as local ground for gate drive loop; source inductance directly impacts switching speed and oscillation risk

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.25 Ω·nC - balances conduction and switching loss trade-offs for optimal efficiency across 50–250 kHz operating range
Avalanche energy rating	690 mJ single-pulse - enables reliable operation in unclamped inductive loads without external protection components
Ultra-low Q_gd/Q_g ratio	30 % - improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions in half-bridge configurations
Body diode softness factor (Q_rr/I_RRM)	0.23 μC/A - suppresses voltage overshoot and ringing during diode commutation, lowering EMI filter requirements

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary switch in active clamp forward or two-transistor forward converter for 48 V–12 V intermediate bus conversion. IC Role / Device Role / Timing Role: High-side main switching element handling 29 A continuous current at 100–200 kHz with 600 V blocking capability. Use Value: Low R_DS(on) and Q_g enable >95 % efficiency at full load while maintaining junction temperature below 130 °C with passive cooling.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter leg, operating at 16 kHz with unclamped inductive stress. Use Value: Rated E_AS and rugged body diode eliminate need for anti-parallel diode and snubber networks, reducing BOM count and layout area.
LED Street Lighting Drivers	Industrial Motor Drives
Use Scenario: High-frequency buck-boost LED driver powering 100–200 W luminaires from 277 VAC line with PFC front-end. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage, conducting 15 A average current with 600 V clearance. Use Value: Low C_iss and fast t_rr minimize switching loss and audible noise, meeting Class B EMI limits without oversized filters.	Use Scenario: Half-bridge upper switch in 3 kW induction heating inverter operating at 20–50 kHz with resonant tank loading. IC Role / Device Role / Timing Role: Fast-switching power switch managing 29 A peak current and 600 V transient spikes during zero-voltage switching transitions. Use Value: 0.5 °C/W R_thJC enables direct heatsink mounting with <10 K/W total thermal resistance, sustaining 100 % duty cycle at 75 °C ambient.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary switch in active clamp forward or two-transistor forward converter for 48 V–12 V intermediate bus conversion.

IC Role / Device Role / Timing Role: High-side main switching element handling 29 A continuous current at 100–200 kHz with 600 V blocking capability.

Use Value: Low R_DS(on) and Q_g enable >95 % efficiency at full load while maintaining junction temperature below 130 °C with passive cooling.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter leg, operating at 16 kHz with unclamped inductive stress.

Use Value: Rated E_AS and rugged body diode eliminate need for anti-parallel diode and snubber networks, reducing BOM count and layout area.

LED Street Lighting Drivers

Industrial Motor Drives

Use Scenario: High-frequency buck-boost LED driver powering 100–200 W luminaires from 277 VAC line with PFC front-end.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage, conducting 15 A average current with 600 V clearance.

Use Value: Low C_iss and fast t_rr minimize switching loss and audible noise, meeting Class B EMI limits without oversized filters.

Use Scenario: Half-bridge upper switch in 3 kW induction heating inverter operating at 20–50 kHz with resonant tank loading.

IC Role / Device Role / Timing Role: Fast-switching power switch managing 29 A peak current and 600 V transient spikes during zero-voltage switching transitions.

Use Value: 0.5 °C/W R_thJC enables direct heatsink mounting with <10 K/W total thermal resistance, sustaining 100 % duty cycle at 75 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 30 A, R_DS(on) = 0.13 Ω, Q_g = 110 nC, D²PAK package	Lower gate charge but higher R_DS(on); surface-mount only; no isolated tab	Preferred for automated SMT assembly where thermal pad soldering is feasible and board space permits larger footprint
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.14 Ω, Q_g = 125 nC, TO-247AC package	Higher R_thJC (0.65 °C/W); larger outline; same lead-free/halogen-free compliance	Chosen when higher creepage/clearance or mechanical robustness is required in high-vibration environments

Compared with STW30NM60ND and IXFH30N60P, the SIHP30N60E-GE3 offers the lowest R_DS(on) × Q_g figure-of-merit among TO-220AB-packaged 600 V MOSFETs, delivering superior thermal performance per unit cost in through-hole, heatsink-mounted high-power applications.

Availability

SIHP30N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SIHP30N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems - emphasizing low FOM, rugged avalanche capability, and consistent parametric stability across temperature and life cycle.

FAQ

What is the maximum continuous drain current rating for SIHP30N60E-GE3 at 100 °C case temperature?

The SIHP30N60E-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, derated linearly from 29 A at 25 °C using the specified 2 W/°C derating factor. This value reflects thermal limits under real-world heatsink conditions and must be verified with actual R_thJA and ambient airflow in the final design. The SIHP30N60E-GE3 datasheet confirms this rating in the Absolute Maximum Ratings table.

Does SIHP30N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP30N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS = 690 mJ), tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A at T_J = 25 °C. This rating ensures survivability during unclamped inductive switching events without degradation. The SIHP30N60E-GE3 specification sheet documents this test condition explicitly in Note b.

What is the typical gate threshold voltage range for SIHP30N60E-GE3, and why does it matter for gate drive design?

The SIHP30N60E-GE3 has a V_GS(th) range of 2.0–4.0 V at T_J = 25 °C, ensuring reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on. This range avoids marginal enhancement near 5 V logic levels and supports robust operation across temperature. The SIHP30N60E-GE3 datasheet specifies this in the Static Characteristics table.

Can SIHP30N60E-GE3 be used in place of a logic-level MOSFET in 5 V gate drive circuits?

No - the SIHP30N60E-GE3 is not a logic-level device; its minimum V_GS(th) is 2.0 V, but full enhancement requires ≥10 V to achieve R_DS(on) ≤ 0.125 Ω. At 5 V gate drive, R_DS(on) exceeds 0.5 Ω, causing excessive conduction loss. The SIHP30N60E-GE3 is designed for 10 V gate drive systems, as confirmed by its R_DS(on) test condition and Q_g curve.

What is the body diode reverse recovery charge (Q_rr) of SIHP30N60E-GE3, and how does it impact EMI in boost converters?

The SIHP30N60E-GE3 has a Q_rr of 15 μC (max) at T_J = 25 °C, IS = 15 A, dI/dt = 100 A/μs. This value directly influences diode turn-off loss and high-frequency ringing amplitude in boost PFC stages. Lower Q_rr reduces EMI generation and snubber losses - the SIHP30N60E-GE3's Q_rr is documented in the Drain-Source Body Diode Characteristics table.

SIHP30N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

SIHP30N60E-GE3 FAQ

1.How can I place an order for SIHP30N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP30N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP30N60E-GE3 reliable?

The price and inventory of SIHP30N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP30N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP30N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP30N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP30N60E-GE3?

SIHP30N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP30N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP30N60E-GE3?

For technical support, including SIHP30N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP30N60E-GE3 requirements.

6.How does Aetrix verify that SIHP30N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP30N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP30N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP30N60E-GE3?

All SIHP30N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP30N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP30N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP30N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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