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Vishay Siliconix SIHP33N60EF-GE3
- Part No.:
- SIHP33N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP33N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 33A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,644
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Product details
Overview
SIHP33N60EF-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring ultra-low gate charge (155 nC max), fast body diode (trr = 162 ns typ), and avalanche-rated ruggedness (EAS = 691 mJ). It delivers low conduction loss (RDS(on) = 0.098 Ω @ 10 V) and optimized switching performance for high-frequency ZVS and LLC resonant converters in telecom and solar inverters.
For engineers reviewing the SIHP33N60EF-GE3 datasheet, SIHP33N60EF-GE3 pinout, SIHP33N60EF-GE3 application, or SIHP33N60EF-GE3 equivalent, key selection criteria include its 600 V VDS rating, 0.098 Ω RDS(on), 155 nC Qg, fast trr of 162 ns, and TO-220AB thermal performance (RthJC = 0.45 °C/W) - all critical for high-efficiency SMPS design with reduced EMI and thermal stress.
Technical Context
The SIHP33N60EF-GE3 employs Vishay's EF-series silicon technology to achieve reduced reverse recovery charge (Qrr = 1.0–2.0 μC) and low figure-of-merit (RDS(on) × Qg = 15.2 nC·Ω). Its fast intrinsic body diode enables zero-voltage switching in phase-shifted bridge topologies without external SiC diodes.
Designed for hard-switched and resonant applications up to 500 kHz, it supports dV/dt immunity of 70 V/ns (TJ = 125 °C) and unclamped inductive switching robustness via rated UIS capability. Gate threshold voltage (2.0–4.0 V) ensures stable turn-on with standard 10 V gate drivers while avoiding spurious conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PV inverters and telecom rectifiers |
| RDS(on) max | 0.098 Ω @ VGS = 10 V - enables ≤ 54 W conduction loss at 21 A continuous current (TC = 100 °C) |
| Qg max | 155 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency SMPS |
| trr typ | 162 ns - minimizes diode recovery losses and EMI in LLC and PSFB topologies operating above 100 kHz |
| EAS | 691 mJ - provides single-pulse avalanche energy handling for reliable operation during load dump or short-circuit events |
| RthJC | 0.45 °C/W - enables >200 W power dissipation with moderate heatsinking, supporting compact 1–3 kW power stage layouts |
| Ciss typ | 3454 pF - balances Miller effect suppression and switching speed for stable high-dV/dt operation |
Pinout & Package
SIHP33N60EF-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and direct heatsink mounting. Thermal resistance from junction to case is 0.45 °C/W, and the package complies with JEDEC TO-220 standards (Document 66542).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 0.5 Ω typical gate input resistance minimizes ringing with standard 9.1 Ω series gate resistor |
| D (Drain) | Main power output terminal | Connected to internal die drain and metal tab; requires electrical isolation when mounted to heatsink |
| S (Source) | Power return and reference node | Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 162 ns typ and Qrr = 1.0 μC typ eliminate need for external anti-parallel diodes in resonant half-bridge configurations |
| Low RDS(on) × Qg FOM | 15.2 nC·Ω - improves trade-off between switching and conduction losses in 100–300 kHz designs |
| Avalanche energy rating | EAS = 691 mJ - guarantees safe operation under unclamped inductive switching without derating |
| Reduced Coss | Co(er) = 121 pF - lowers capacitive turn-off loss and improves light-load efficiency in ZVS circuits |
| Pb-free & Halogen-free | Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard (doc# 99912) |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 1–3 kW server rectifier modules with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switch managing 400 V DC bus conversion with ZVS capability. Use Value: Fast trr and low Qrr reduce dead-time losses and improve full-load efficiency by ≥0.8 % versus standard 600 V MOSFETs. |
Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched or phase-shifted bridge switch handling 33 A RMS current with repetitive avalanche tolerance. Use Value: 600 V rating and 691 mJ EAS support reliable operation during grid fault transients without snubber redesign. |
| LED Driver | Industrial Battery Charger |
Use Scenario: Secondary-side synchronous rectifier in high-intensity discharge (HID) lamp ballasts with resonant control. IC Role / Device Role / Timing Role: Low-loss freewheeling switch leveraging fast body diode for bidirectional current handling. Use Value: 0.9 V VSD forward drop and 162 ns trr cut diode conduction loss by 40 % compared to standard 600 V superjunction devices. |
Use Scenario: Primary switch in 2–5 kW industrial battery chargers using asymmetric half-bridge topology with wide input range (200–800 V). IC Role / Device Role / Timing Role: High-reliability power switch rated for continuous 21 A at 100 °C case temperature. Use Value: RthJC = 0.45 °C/W enables stable thermal operation with passive heatsinking, reducing fan dependency and system noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW33N60M2 | 600 V, 33 A, RDS(on) = 0.095 Ω, Qg = 145 nC, trr = 220 ns - higher Qrr (2.8 μC) and slower diode recovery | Less suitable for high-frequency LLC where trr < 200 ns is required; better for hard-switched PFC stages | Prefer SIHP33N60EF-GE3 when diode recovery performance dominates; STW33N60M2 offers marginally lower RDS(on) but higher switching loss |
| IXFH32N60P | 600 V, 32 A, RDS(on) = 0.115 Ω, Qg = 130 nC, no specified trr or Qrr - non-optimized body diode | Not recommended for topologies requiring body diode commutation; requires external diode in PSFB | SIHP33N60EF-GE3 is superior for resonant topologies; IXFH32N60P may be selected only if gate drive power minimization is primary and diode function is externally managed |
Compared with STW33N60M2 and IXFH32N60P, the SIHP33N60EF-GE3 uniquely combines low Qg, fast trr, and rated EAS - making it the preferred choice for ZVS, PSFB, and LLC converters where body diode behavior directly impacts efficiency and reliability.
Availability
SIHP33N60EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHP33N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SIHP33N60EF-GE3 belongs to Vishay's EF Series - engineered specifically for high-frequency resonant and soft-switching power conversion, targeting reduced switching loss and enhanced body diode performance in next-generation SMPS.
FAQ
What is the maximum continuous drain current for SIHP33N60EF-GE3 at 100 °C case temperature?
The SIHP33N60EF-GE3 supports 21 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for thermal derating beyond 25 °C ambient, enabling reliable operation in enclosed industrial power supplies where case temperatures routinely exceed 85 °C.
Does SIHP33N60EF-GE3 have a fully characterized fast body diode, and what are its key recovery parameters?
Yes, the SIHP33N60EF-GE3 features a fully characterized fast body diode with trr = 162 ns (typical), Qrr = 1.0 μC (typical), and IRRM = 13 A (typical) at TJ = 25 °C. These values are measured under standardized conditions (IF = 16.5 A, dI/dt = 100 A/μs, VR = 400 V) and are integral to its qualification for ZVS and PSFB topologies without external diode supplementation.
Is SIHP33N60EF-GE3 suitable for use in phase-shifted bridge (PSFB) converters, and why?
Yes, SIHP33N60EF-GE3 is explicitly qualified for PSFB converters due to its fast body diode (trr = 162 ns), low Qrr (1.0 μC), and 70 V/ns dV/dt immunity at TJ = 125 °C. These characteristics ensure clean zero-voltage turn-on, minimize circulating current losses during dead time, and prevent voltage overshoot during diode commutation - all confirmed in Vishay's application notes for S17-0295.
What is the gate threshold voltage range for SIHP33N60EF-GE3, and how does it impact gate drive design?
The SIHP33N60EF-GE3 has a gate threshold voltage range of 2.0 V to 4.0 V at TJ = 25 °C. This ensures robust turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage currents. The relatively narrow VGS(th) distribution supports consistent timing across parallel devices in high-power modules without requiring individual gate bias trimming.
How does the RDS(on) × Qg figure-of-merit of SIHP33N60EF-GE3 compare to conventional 600 V superjunction MOSFETs?
The SIHP33N60EF-GE3 achieves a figure-of-merit of 15.2 nC·Ω (0.098 Ω × 155 nC), significantly lower than typical 600 V superjunction MOSFETs (often >25 nC·Ω). This reflects Vishay's EF-series optimization for simultaneous conduction and switching loss reduction - verified in the Product Summary section of datasheet 91592 - enabling higher efficiency in 100–500 kHz SMPS designs.
SIHP33N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 98mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3454 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP33N60EF-GE3 FAQ
1.How can I place an order for SIHP33N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP33N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP33N60EF-GE3 reliable?
The price and inventory of SIHP33N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP33N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP33N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP33N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP33N60EF-GE3?
SIHP33N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP33N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP33N60EF-GE3?
For technical support, including SIHP33N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP33N60EF-GE3 requirements.
6.How does Aetrix verify that SIHP33N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP33N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP33N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP33N60EF-GE3?
All SIHP33N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP33N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP33N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHP33N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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