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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP33N60E-GE3

Name: SIHP33N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP33N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP33N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP33N60E-GE3.pdf

Description:: MOSFET N-CH 600V 33A TO220AB

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Product details

Overview

SIHP33N60E-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.099 Ω @ V_GS = 10 V, Q_g = 150 nC, and avalanche-rated (E_AS = 793 mJ). It serves as a high-voltage switching element in primary-side SMPS and PFC stages of server/telecom power supplies.

For engineers reviewing the SIHP33N60E-GE3 datasheet, SIHP33N60E-GE3 pinout, SIHP33N60E-GE3 application, or SIHP33N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and robust unclamped inductive switching capability under 480 V bus conditions.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while its low C_iss (3508 pF) and C_oss (156 pF) reduce capacitive losses during high-frequency operation.

The device integrates an intrinsic body diode rated for 33 A continuous source current and exhibits trr = 503–1006 ns with Q_rr = 8.5–17 μC at 25 °C - critical for managing reverse recovery stress in bridge configurations and PFC boost diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage in telecom/server PSUs
R_DS(on) max @ 25 °C	0.099 Ω - enables <1.1 W conduction loss at 33 A, reducing heatsink requirements in 1–3 kW designs
Q_g max	150 nC - lowers gate drive power and allows use of smaller, lower-cost gate drivers (e.g., 1–2 A peak)
E_AS	793 mJ - withstands single-pulse inductive energy without failure in hard-switched topologies with L = 28.2 mH
C_iss	3508 pF - minimizes Miller effect and improves dv/dt immunity during turn-off in high-side switching
T_J range	−55 to +150 °C - supports operation in sealed industrial enclosures and high-ambient telecom rectifiers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.2 W/°C linear derating above 25 °C case temperature.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <150 nC charge for full enhancement; gate resistance R_g = 0.7 Ω typical
D (Drain)	High-voltage output node	Connected to TO-220 tab; electrically tied to PCB copper pour for thermal conduction and EMI shielding
S (Source)	Reference return path	Common node for gate driver ground and current-sense resistor; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	~9.9 Ω·nC - directly reduces total switching + conduction loss in 100–300 kHz SMPS designs
Avalanche energy rating (E_AS)	793 mJ - eliminates need for external snubbers in flyback or resonant converters subject to inductive kick
Ultra-low Q_gd/Q_g ratio	42/150 = 28 % - suppresses Miller-induced false turn-on and improves noise immunity in high-dv/dt environments
Body diode softness (Q_rr/I_RRM)	8.5–17 μC / 26 A = 0.33–0.65 μs - limits di/dt-induced voltage overshoot during commutation in PFC and half-bridge circuits

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter with 54 V DC output and 92 % efficiency target. IC Role / Device Role / Timing Role: High-side synchronous rectifier control switch operating at 200–300 kHz with ZVS transition. Use Value: Low R_DS(on) and Q_g minimize conduction loss and gate drive loss, enabling compact heatsink and >92 % full-load efficiency.	Use Scenario: Boost PFC stage in −48 V telecom rectifier handling 3 kW input with THD < 5 %. IC Role / Device Role / Timing Role: Fast-switching main switch in continuous conduction mode (CCM) PFC controller loop. Use Value: Low C_iss and high dV/dt immunity (70 V/ns) ensure stable operation under high-line transients and reduce EMI filter size.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in 5 kW string inverter with 600 V DC bus and 16 kHz PWM modulation. IC Role / Device Role / Timing Role: IGBT replacement in inverter leg for improved efficiency and reduced gate drive complexity. Use Value: Avalanche rating and 150 °C T_J support unattended operation in outdoor enclosures with ambient up to 70 °C.	Use Scenario: Brake chopper switch in 7.5 kW VFD controlling induction motor during regenerative braking. IC Role / Device Role / Timing Role: Energy-dumping switch clamping DC bus voltage during deceleration events. Use Value: Single-pulse E_AS = 793 mJ handles 200 ms brake pulses without thermal runaway or parametric shift.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter with 54 V DC output and 92 % efficiency target.

IC Role / Device Role / Timing Role: High-side synchronous rectifier control switch operating at 200–300 kHz with ZVS transition.

Use Value: Low R_DS(on) and Q_g minimize conduction loss and gate drive loss, enabling compact heatsink and >92 % full-load efficiency.

Use Scenario: Boost PFC stage in −48 V telecom rectifier handling 3 kW input with THD < 5 %.

IC Role / Device Role / Timing Role: Fast-switching main switch in continuous conduction mode (CCM) PFC controller loop.

Use Value: Low C_iss and high dV/dt immunity (70 V/ns) ensure stable operation under high-line transients and reduce EMI filter size.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in 5 kW string inverter with 600 V DC bus and 16 kHz PWM modulation.

IC Role / Device Role / Timing Role: IGBT replacement in inverter leg for improved efficiency and reduced gate drive complexity.

Use Value: Avalanche rating and 150 °C T_J support unattended operation in outdoor enclosures with ambient up to 70 °C.

Use Scenario: Brake chopper switch in 7.5 kW VFD controlling induction motor during regenerative braking.

IC Role / Device Role / Timing Role: Energy-dumping switch clamping DC bus voltage during deceleration events.

Use Value: Single-pulse E_AS = 793 mJ handles 200 ms brake pulses without thermal runaway or parametric shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N60M2	R_DS(on) = 0.095 Ω, Q_g = 135 nC, TO-247 package, no official UIS rating	Higher peak current (IDM = 132 A) but lacks avalanche qualification - requires external clamping in inductive loads	Preferred where layout allows larger TO-247 and system-level protection is already implemented
IXFH32N60P	R_DS(on) = 0.11 Ω, Q_g = 120 nC, TO-247, E_AS = 720 mJ, higher C_iss (4200 pF)	Lower gate charge but higher on-resistance and capacitance - trades conduction loss for slightly faster switching	Selected when gate drive strength is limited and moderate R_DS(on) penalty is acceptable for cost reduction

Compared with STW33N60M2 and IXFH32N60P, SIHP33N60E-GE3 offers certified avalanche ruggedness and TO-220AB compatibility for space-constrained legacy designs, while maintaining best-in-class FOM among 600 V 33 A MOSFETs.

Availability

SIHP33N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP33N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The SIHP33N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in hard-switched and resonant power conversion topologies.

FAQ

What is the maximum continuous drain current rating for SIHP33N60E-GE3 at 100 °C case temperature?

The SIHP33N60E-GE3 supports 21 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board layout, heatsink interface, and ambient airflow in the final design. The SIHP33N60E-GE3 datasheet specifies linear derating beyond 25 °C at 2.2 W/°C.

Does SIHP33N60E-GE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHP33N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 793 mJ. Testing follows JEDEC JESD24-11 using L = 28.2 mH, R_g = 25 Ω, V_DD = 50 V, and I_AS = 7.5 A at T_J = 25 °C. The SIHP33N60E-GE3 maintains parameter stability after 1000 such pulses, confirming ruggedness for real-world inductive load transients.

What is the gate threshold voltage range for SIHP33N60E-GE3, and why does it matter for drive circuit design?

The SIHP33N60E-GE3 has V_GS(th) = 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise coupling. For robust operation, gate drive must exceed 4.0 V minimum and remain below ±30 V absolute maximum - values explicitly defined in the SIHP33N60E-GE3 Absolute Maximum Ratings.

How does the body diode performance of SIHP33N60E-GE3 compare to standard FRDs in PFC applications?

The SIHP33N60E-GE3 body diode delivers V_SD = 0.9–1.2 V at 16.5 A and t_rr = 503–1006 ns, offering lower forward drop than many fast recovery diodes but longer recovery time. Its Q_rr = 8.5–17 μC is managed via soft recovery characteristics, making it viable in CCM PFC when paired with appropriate gate timing - a key behavior documented for the SIHP33N60E-GE3 in Vishay's application notes.

Is SIHP33N60E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?

Yes, the "-GE3" suffix confirms SIHP33N60E-GE3 is both lead-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912). The "E3" denotes lead-free termination, while "G" indicates halogen-free packaging - a dual compliance verified in the official ordering information section of the SIHP33N60E-GE3 datasheet.

SIHP33N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP33N60E-GE3 FAQ

1.How can I place an order for SIHP33N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP33N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP33N60E-GE3 reliable?

The price and inventory of SIHP33N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP33N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP33N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP33N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP33N60E-GE3?

SIHP33N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP33N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP33N60E-GE3?

For technical support, including SIHP33N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP33N60E-GE3 requirements.

6.How does Aetrix verify that SIHP33N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP33N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP33N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP33N60E-GE3?

All SIHP33N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP33N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP33N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP33N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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