Vishay Siliconix SIHP35N60E-BE3

Overview

SIHP35N60E-BE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.082 Ω R_DS(on) at V_GS = 10 V, 132 nC total gate charge, and 691 mJ single-pulse avalanche energy-designed for high-efficiency hard-switching PFC and SMPS stages in server power supplies and photovoltaic inverters.

For engineers reviewing the SIHP35N60E-BE3 datasheet, SIHP35N60E-BE3 pinout, SIHP35N60E-BE3 application, or SIHP35N60E-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (6.87 Ω·nC), 2760 pF input capacitance, and robust 600 V V_DS rating with ±30 V gate tolerance-critical for reliable operation in high-voltage industrial switching circuits.

Technical Context

This device employs planar stripe silicon technology optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and fixed-frequency PWM converters. Its 0.5 °C/W junction-to-case thermal resistance enables 250 W dissipation at T_C = 25 °C, while the integral body diode supports synchronous rectification and unclamped inductive switching with 455–910 ns reverse recovery time.

The MOSFET's 2 V to 4 V gate threshold voltage ensures stable turn-on under wide V_GS margin, and its 57 V/ns dV/dt rating at T_J = 125 °C supports noise-immune operation in high-di/dt environments such as motor drives and induction heating systems.

Key Specifications

Pinout & Package

TO-220AB package with isolated drain tab, standard through-hole mounting, and 0.5 °C/W junction-to-case thermal resistance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW35N60DM6 and IXFH35N60P, SIHP35N60E-BE3 delivers optimal balance of low R_DS(on) × Q_g, through-hole manufacturability, and cost-effective TO-220AB thermal performance-making it ideal for mid-power industrial and telecom power supplies where assembly flexibility and reliability are prioritized.

Availability

SIHP35N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.

Supply support for SIHP35N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHP35N60E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in PFC, SMPS, and renewable energy systems where low conduction loss and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHP35N60E-BE3 at 100 °C case temperature?

The SIHP35N60E-BE3 supports 20 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside its 0.5 °C/W R_thJC to ensure junction temperature remains below 150 °C under steady-state operation.

Does SIHP35N60E-BE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP35N60E-BE3 is fully rated for single-pulse avalanche energy (E_AS) at 691 mJ. The test condition is V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A-per the datasheet note b. This rating validates its use in unclamped inductive switching without external protection.

What is the gate-source threshold voltage range for SIHP35N60E-BE3, and how does it affect drive circuit design?

The SIHP35N60E-BE3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA. This wide threshold ensures robust turn-on with 10 V gate drive while preventing accidental activation from noise; designers should maintain ≥6 V minimum drive to guarantee full enhancement and avoid linear-mode operation during transitions.

How does the body diode performance of SIHP35N60E-BE3 compare to standard FRDs in PFC applications?

The SIHP35N60E-BE3 body diode exhibits 0.9–1.2 V forward voltage at 17 A and 455–910 ns reverse recovery time. While slower than dedicated fast recovery diodes, its Q_rr of 8–16 μC enables acceptable soft recovery in boost PFC, especially when paired with zero-voltage switching techniques to mitigate turn-on loss.

Is SIHP35N60E-BE3 lead (Pb)-free and halogen-free, and which standard does it comply with?

Yes, SIHP35N60E-BE3 is lead (Pb)-free and halogen-free per Vishay's material categorization standard, documented in www.vishay.com/doc?99912. The "-BE3" suffix explicitly denotes compliance with RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21.