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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP35N60EF-GE3

Name: SIHP35N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP35N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP35N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP35N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 32A TO220AB

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Product details

Overview

SIHP35N60EF-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 84 mΩ R_DS(on) at V_GS = 10 V, 134 nC total gate charge, and avalanche-rated (298 mJ) operation-designed for high-efficiency switch-mode power supplies and PFC stages in telecom and server power systems.

For engineers reviewing the SIHP35N60EF-GE3 datasheet, SIHP35N60EF-GE3 pinout, SIHP35N60EF-GE3 application, or SIHP35N60EF-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 150 ns typ.), low C_iss (2568 pF), and optimized FOM (R_DS(on) × Q_g) for reduced switching and conduction losses in hard-switched topologies.

Technical Context

This device employs planar stripe silicon technology with an integrated ultra-fast recovery body diode, enabling robust unclamped inductive switching (UIS) and high dv/dt immunity (100 V/ns at T_J = 125 °C). Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under wide drive conditions while maintaining noise immunity.

The EF Series architecture reduces specific on-resistance by 25% versus prior generations and delivers low C_oss (113 pF) and Cr_ss (7 pF), supporting high-frequency operation up to 200 kHz in resonant and hard-switched converters without excessive Miller-induced shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ	0.084 Ω @ V_GS = 10 V - enables <1.4 W conduction loss at 17 A continuous drain current
Q_g max	134 nC - determines gate driver power requirement and switching speed in 100–200 kHz SMPS
E_AS	298 mJ - rated for repetitive unclamped inductive switching in motor drives and PFC boost stages
t_rr	150 ns typ - minimizes reverse recovery loss and EMI in bridge-leg configurations with synchronous rectification
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above 25 °C case temperature
C_iss	2568 pF - sets input capacitance load for gate drivers and impacts turn-on delay in high-side configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting footprint (10.16 mm × 19.05 mm × 4.7 mm), screw-hole compatible for heatsink attachment and thermal management in high-power applications.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance dominates switching timing
D	Drain	High-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to system ground
S	Source	Power return path and reference for gate drive; carries full load current and reverse diode conduction during freewheeling

Key Features

Feature	Design Value
Fast body diode	150 ns t_rr, 1.2 V V_SD at 17 A - reduces dead-time loss and improves efficiency in half-bridge and LLC resonant converters
Low R_DS(on) × Q_g FOM	11.3 Ω·nC - balances conduction and switching loss trade-off for optimal 100–200 kHz operation in PFC and DC-DC stages
Avalanche energy rating	298 mJ single-pulse UIS - enables reliable operation in inductive load switching without external snubbers
Low C_oss and Cr_ss	113 pF C_oss, 7 pF Cr_ss - minimizes Miller effect, improving gate drive stability and reducing voltage spikes during turn-off

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) front-end converters with active clamp forward or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage primary switch handling 380–400 V DC input, operating at 100–150 kHz with zero-voltage switching assistance. Use Value: Low Q_g and fast body diode enable precise timing control and reduce dead-time conduction loss in ZVS transitions.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier modules meeting 80 PLUS Titanium efficiency requirements. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch managing 480 V output with 20 A peak inductor current. Use Value: 84 mΩ R_DS(on) and 298 mJ E_AS ensure thermal stability and reliability under line surges and load transients.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600 V nominal bus voltage and MPPT tracking at variable frequency. IC Role / Device Role / Timing Role: Unidirectional high-side switch in H-bridge output stage, commutating 15–20 A RMS current at 16 kHz PWM. Use Value: 100 V/ns dv/dt rating and low C_iss prevent false triggering and support clean gate waveforms in noisy EMI environments.	Use Scenario: Inverter leg switch in 5–7.5 kW HVAC compressors using space-vector modulation (SVM) at 8–12 kHz. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage with regenerative braking capability. Use Value: Integrated fast diode eliminates need for discrete anti-parallel diodes, reducing component count and PCB area in compact drives.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) front-end converters with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage primary switch handling 380–400 V DC input, operating at 100–150 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and fast body diode enable precise timing control and reduce dead-time conduction loss in ZVS transitions.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier modules meeting 80 PLUS Titanium efficiency requirements.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch managing 480 V output with 20 A peak inductor current.

Use Value: 84 mΩ R_DS(on) and 298 mJ E_AS ensure thermal stability and reliability under line surges and load transients.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600 V nominal bus voltage and MPPT tracking at variable frequency.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in H-bridge output stage, commutating 15–20 A RMS current at 16 kHz PWM.

Use Value: 100 V/ns dv/dt rating and low C_iss prevent false triggering and support clean gate waveforms in noisy EMI environments.

Use Scenario: Inverter leg switch in 5–7.5 kW HVAC compressors using space-vector modulation (SVM) at 8–12 kHz.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage with regenerative braking capability.

Use Value: Integrated fast diode eliminates need for discrete anti-parallel diodes, reducing component count and PCB area in compact drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N60DM6	600 V, 34 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, D²PAK package	Lower gate charge but surface-mount only; no through-hole option; higher thermal resistance (R_thJC = 0.75 °C/W)	Preferred for automated SMT production where board space is constrained and heatsinking uses thermal pads or copper planes.
IXFH35N60P	600 V, 35 A, R_DS(on) = 0.080 Ω, Q_g = 145 nC, TO-247AC package	Larger TO-247 package offers lower R_thJC (0.45 °C/W) but requires larger PCB cutout and different mounting hardware	Selected when maximum power density and thermal headroom are critical, especially in industrial UPS or welder designs exceeding 250 W dissipation.

Compared with STW35N60DM6 and IXFH35N60P, the SIHP35N60EF-GE3 provides optimal balance of through-hole manufacturability, thermal performance (R_thJC = 0.5 °C/W), and fast body diode behavior-making it ideal for cost-sensitive, medium-power telecom and server power supplies requiring field-replaceable serviceability.

Availability

SIHP35N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHP35N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, computing, and telecom markets.

The EF Series MOSFETs are engineered for high-frequency, high-efficiency power conversion-targeting demanding applications such as PFC, server/telecom SMPS, and renewable energy inverters where low switching loss and fast body diode recovery are critical.

FAQ

What is the maximum continuous drain current rating for SIHP35N60EF-GE3 at 100 °C case temperature?

The SIHP35N60EF-GE3 has a continuous drain current rating of 20 A at T_C = 100 °C, derated linearly from 32 A at 25 °C using a 2.0 W/°C factor. This reflects real-world thermal constraints in enclosed power supplies where heatsink temperature rises significantly under full load. The SIHP35N60EF-GE3 maintains safe operation within its SOA when properly heatsinked per the 0.5 °C/W R_thJC specification.

Does SIHP35N60EF-GE3 have an integrated body diode, and what are its key recovery characteristics?

Yes, the SIHP35N60EF-GE3 features an integrated ultra-fast body diode with t_rr = 150 ns typical and Q_rr = 1.1 μC at T_J = 25 °C. Its V_SD is 1.2 V at 17 A and 25 °C, and it supports di/dt = 300 A/μs. These parameters make the SIHP35N60EF-GE3 suitable for synchronous rectification and freewheeling paths in bridge topologies without external diodes.

What is the gate threshold voltage range for SIHP35N60EF-GE3, and how does it affect drive circuit design?

The SIHP35N60EF-GE3 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on in high-dv/dt environments. For robust operation, the SIHP35N60EF-GE3 should be driven with ≥10 V to achieve its specified 0.084 Ω R_DS(on).

Is SIHP35N60EF-GE3 suitable for avalanche-prone circuits like inductive motor drives?

Yes, the SIHP35N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 298 mJ at T_J = 25 °C. This makes it appropriate for motor drive half-bridges and welding inverters where inductive kickback occurs. The SIHP35N60EF-GE3's avalanche capability is tested per JEDEC standards and documented in Vishay's S20-0091 datasheet.

What is the recommended gate resistor value for SIHP35N60EF-GE3 in a 150 kHz PFC boost converter?

Based on typical switching time data (t_d(on) = 28 ns, t_r = 85 ns, t_d(off) = 96 ns, t_f = 61 ns at R_g = 9.1 Ω), a gate resistor of 5–15 Ω is recommended for 150 kHz PFC operation. Lower values (5–8 Ω) optimize efficiency; higher values (10–15 Ω) reduce EMI and gate ringing. The SIHP35N60EF-GE3's 134 nC Q_g requires adequate gate driver peak current (>1.5 A) regardless of R_g choice.

SIHP35N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 97mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2568 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP35N60EF-GE3 FAQ

1.How can I place an order for SIHP35N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP35N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP35N60EF-GE3 reliable?

The price and inventory of SIHP35N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP35N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP35N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP35N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP35N60EF-GE3?

SIHP35N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP35N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP35N60EF-GE3?

For technical support, including SIHP35N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP35N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP35N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP35N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP35N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP35N60EF-GE3?

All SIHP35N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP35N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP35N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP35N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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