Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP35N60E-GE3

Name: SIHP35N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP35N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP35N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP35N60E-GE3.pdf

Description:: MOSFET N-CH 600V 32A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,889

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP35N60E-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.082 Ω R_DS(on) at V_GS = 10 V, 132 nC total gate charge, and 691 mJ single-pulse avalanche energy-designed for hard-switching PFC and SMPS stages in server power supplies and photovoltaic inverters.

For engineers reviewing the SIHP35N60E-GE3 datasheet, SIHP35N60E-GE3 pinout, SIHP35N60E-GE3 application, or SIHP35N60E-GE3 equivalent, key selection criteria include its low Q_g/R_DS(on) figure-of-merit (88 nC typ. / 0.082 Ω), robust UIS rating, and validated performance at 480 V bus voltage with 17 A conduction current.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching efficiency. Its low C_iss (2760 pF) and ultra-low Q_gd (46 nC) reduce Miller-induced turn-off delay and improve dV/dt immunity up to 57 V/ns at T_J = 125 °C.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with t_rr = 455 ns (typ.) and Q_rr = 8 μC at I_F = 17 A, enabling reliable operation in boost PFC topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~565 V DC bus with 5% margin
R_DS(on) typ.	0.082 Ω @ V_GS = 10 V, I_D = 17 A - enables ≤2.4 W conduction loss at 17 A
Q_g max	132 nC - determines gate driver power requirement and switching speed trade-off
E_AS	691 mJ - ensures ruggedness against inductive load transients without external clamping
C_iss	2760 pF @ V_DS = 100 V - impacts gate drive loop stability and EMI filtering design
t_r/t_f	61/32 ns typ. @ V_DD = 480 V, R_g = 9.1 Ω - defines minimum practical switching frequency before losses dominate
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above 25 °C case temperature

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.54 mm lead pitch, and JEDEC MS-001 compliant outline. Thermal pad on backside requires mechanical mounting to heatsink with thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 0.5 Ω gate resistance limits ringing and overshoot
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 600 V blocking
S (Source)	Reference node	Common return for gate drive and load current; establishes local ground for driver IC placement

Key Features

Feature	Design Value
25 % lower specific R_DS(on)	Reduces die area and cost per watt while maintaining 600 V rating
Low Q_g × R_DS(on) FOM	Enables higher efficiency than legacy 600 V MOSFETs at 100–300 kHz switching frequencies
Avalanche-rated (UIS)	Eliminates need for external transient voltage suppressors in inductive switching circuits
Low C_iss and C_oss	Minimizes capacitive switching losses and improves EMI profile in high-dV/dt environments
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard

Applications

Power Factor Correction (PFC)	Photovoltaic Inverters
Use Scenario: Boost converter stage in 3–5 kW single-phase grid-tied solar inverters operating at 100 kHz. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) PFC, handling 17 A RMS input current. Use Value: 0.082 Ω R_DS(on) and 691 mJ E_AS enable >98.2 % efficiency and reliable fault recovery during islanding events.	Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to intermediate bus voltage. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with 480 V V_DS stress. Use Value: 57 V/ns dV/dt rating and low Q_gd ensure stable operation under fast-rising bus transients from MPPT ripple.
Server SMPS	Industrial Motor Drives
Use Scenario: Primary-side switch in 1.5 kW telecom rectifier modules with 48 V output and 90–264 V AC input. IC Role / Device Role / Timing Role: Hard-switched PWM transistor in LLC resonant half-bridge secondary side. Use Value: 132 nC Q_g allows use of low-cost 2 A peak gate drivers while maintaining <50 ns turn-on delay.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drives operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-loss switching element in 3-phase IGBT/MOSFET hybrid inverter with regenerative braking. Use Value: Body diode t_rr = 455 ns and Q_rr = 8 μC minimize commutation losses and reduce snubber sizing by 30 % vs. standard 600 V MOSFETs.

Power Factor Correction (PFC)

Photovoltaic Inverters

Use Scenario: Boost converter stage in 3–5 kW single-phase grid-tied solar inverters operating at 100 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) PFC, handling 17 A RMS input current.

Use Value: 0.082 Ω R_DS(on) and 691 mJ E_AS enable >98.2 % efficiency and reliable fault recovery during islanding events.

Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to intermediate bus voltage.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with 480 V V_DS stress.

Use Value: 57 V/ns dV/dt rating and low Q_gd ensure stable operation under fast-rising bus transients from MPPT ripple.

Server SMPS

Industrial Motor Drives

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier modules with 48 V output and 90–264 V AC input.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in LLC resonant half-bridge secondary side.

Use Value: 132 nC Q_g allows use of low-cost 2 A peak gate drivers while maintaining <50 ns turn-on delay.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drives operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-loss switching element in 3-phase IGBT/MOSFET hybrid inverter with regenerative braking.

Use Value: Body diode t_rr = 455 ns and Q_rr = 8 μC minimize commutation losses and reduce snubber sizing by 30 % vs. standard 600 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N60DM2	650 V rating, 0.075 Ω R_DS(on), 110 nC Q_g, D²PAK package	Higher voltage margin but non-pin-compatible; requires PCB redesign	Preferred where 650 V derating is mandatory and surface-mount assembly is available
IXFH35N60P	600 V rating, 0.085 Ω R_DS(on), 145 nC Q_g, TO-247 package	Larger footprint and higher gate charge increase driver cost and layout complexity	Selected when higher thermal mass is needed for 100 °C ambient industrial environments

Compared with STW35N60DM2 and IXFH35N60P, the SIHP35N60E-GE3 offers optimal balance of low gate charge, proven TO-220AB thermal performance, and cost-effective through-hole assembly-making it ideal for mid-power PFC and inverter designs where layout flexibility and supply chain maturity are critical.

Availability

SIHP35N60E-GE3 is available at Aetrix Electronics and suitable for power factor correction, photovoltaic inverters, and server SMPS requiring stable component supply across multi-year production cycles.

Supply support for SIHP35N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in PFC, SMPS, and renewable energy systems-emphasizing low R_DS(on), rugged avalanche capability, and consistent parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for SIHP35N60E-GE3 at 100 °C case temperature?

The SIHP35N60E-GE3 has a continuous drain current rating of 20 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 32 A rating at 25 °C, based on the device's R_thJC = 0.5 °C/W and maximum T_J = 150 °C limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHP35N60E-GE3 support logic-level gate drive?

No, SIHP35N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it is characterized and optimized for 10 V gate drive-R_DS(on) is specified at V_GS = 10 V, and Q_g values assume 10 V step input. Using 5 V drive results in significantly higher R_DS(on) and increased conduction loss; a dedicated 10 V gate driver is required for full performance.

What is the significance of the "-GE3" suffix in SIHP35N60E-GE3?

The "-GE3" suffix indicates that the SIHP35N60E-GE3 is manufactured at a Vishay facility certified for lead (Pb)-free and halogen-free compliance, meeting RoHS Directive 2011/65/EU requirements. It denotes the same electrical and thermal specifications as the base SIHP35N60E, with no functional or parametric differences-only environmental processing and marking distinctions.

How does the body diode performance of SIHP35N60E-GE3 compare to standard 600 V MOSFETs?

The SIHP35N60E-GE3 body diode delivers t_rr = 455 ns (typ.) and Q_rr = 8 μC at I_F = 17 A, which is 20–30 % faster and lower charge than typical 600 V MOSFETs of similar R_DS(on). This reduces reverse recovery losses in hard-switched topologies and lowers EMI generation during diode commutation-critical for PFC and motor drive applications where body diode conduction occurs regularly.

Can SIHP35N60E-GE3 be used in avalanche mode for circuit protection?

Yes, SIHP35N60E-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with E_AS = 691 mJ (single pulse). This rating is validated per JEDEC JESD24-11 and allows controlled avalanche operation during overcurrent or short-circuit events without device failure-enabling simplified protection schemes in DC-DC converters and motor controllers where fast shutdown is not feasible.

SIHP35N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 94mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 132 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2760 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP35N60E-GE3 FAQ

1.How can I place an order for SIHP35N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP35N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP35N60E-GE3 reliable?

The price and inventory of SIHP35N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP35N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP35N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP35N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP35N60E-GE3?

SIHP35N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP35N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP35N60E-GE3?

For technical support, including SIHP35N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP35N60E-GE3 requirements.

6.How does Aetrix verify that SIHP35N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP35N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP35N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP35N60E-GE3?

All SIHP35N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP35N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP35N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP35N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …