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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP38N60EF-GE3

Name: SIHP38N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP38N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP38N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP38N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 40A TO220AB

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Product details

Overview

SIHP38N60EF-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.061 Ω at V_GS = 10 V, Q_g = 126 nC (typ), and fast body diode with t_rr = 160 ns (typ). It serves as a high-efficiency primary-side switching device in telecom and server SMPS.

For engineers reviewing the SIHP38N60EF-GE3 datasheet, SIHP38N60EF-GE3 pinout, SIHP38N60EF-GE3 application, or SIHP38N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (508 mJ), low C_iss (3576 pF), fast switching (t_d(off) = 143 ns typ), and thermal resistance R_thJC = 0.4 °C/W for high-power density designs.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched 600 V applications, with a fast-recovery integral body diode rated for 23.5 A continuous reverse recovery (dI/dt = 250 A/μs). Its gate charge profile supports efficient zero-voltage switching (ZVS) transitions in resonant topologies.

The device operates within -55 °C to +150 °C junction temperature range and sustains unclamped inductive switching up to 508 mJ at T_J = 25 °C. Its dv/dt immunity of 100 V/ns at T_J = 125 °C enables robust operation in noisy high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) typ @ 10 V	0.061 Ω - Enables <1.5 W conduction loss at 23.5 A, critical for PFC and LLC primary switches
Q_g max	189 nC - Determines gate driver current requirement (≥2 A peak for 100 ns turn-on)
t_rr typ	160 ns - Limits reverse recovery losses in bridge-leg commutation; enables >100 kHz operation
E_AS	508 mJ - Confirmed single-pulse avalanche energy rating for reliable overvoltage clamping
R_thJC	0.4 °C/W - Allows 313 W power dissipation with ≤125 °C case-to-ambient ΔT under forced air cooling
C_iss	3576 pF - Sets Miller capacitance-driven gate drive loop stability requirements

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal pad soldered directly to heatsink for optimal junction-to-case heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <200 Ω series resistance to damp ringing from 0.5 Ω gate input resistance
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 600 V transients
S (Source)	Reference node	Common return path for load current and gate drive return; defines local ground for driver IC placement

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.1 Ω·nC - Reduces combined conduction and switching losses in high-frequency SMPS
Avalanche-rated (UIS)	508 mJ - Eliminates need for external snubbers in inductive load switching
Fast body diode	t_rr = 160 ns, Q_rr = 1.2 μC - Minimizes shoot-through risk and EMI in synchronous rectification
Low C_iss	3576 pF - Improves gate drive efficiency and reduces Miller-induced false turn-on
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW distributed power architecture (DPA) with active clamp forward topology. IC Role / Device Role / Timing Role: High-side switching element handling 48 V–54 V input, operating at 250 kHz with ZVS-assisted turn-on. Use Value: 0.061 Ω R_DS(on) and 126 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin below 105 °C case temperature.	Use Scenario: Main switch in 48 V telecom rectifier with dual-phase interleaved PFC stage. IC Role / Device Role / Timing Role: Boost switch conducting 35 A RMS, switching at 100 kHz with critical conduction mode (CrM) control. Use Value: Fast body diode (t_rr = 160 ns) prevents cross-conduction losses during phase interleaving, reducing total system EMI by 8 dBμV.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level MPPT converters feeding central inverters. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch blocking up to 1000 V DC link, turned on/off at <20 kHz. Use Value: 600 V V_DS rating with 508 mJ UIS energy ensures survivability during lightning-induced surges on rooftop arrays.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC). IC Role / Device Role / Timing Role: Half-bridge upper device switching at 8 kHz with 150 °C junction temperature cycling. Use Value: R_thJC = 0.4 °C/W and 150 °C T_Jmax allow sustained 25 A continuous current without derating in sealed enclosures.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW distributed power architecture (DPA) with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side switching element handling 48 V–54 V input, operating at 250 kHz with ZVS-assisted turn-on.

Use Value: 0.061 Ω R_DS(on) and 126 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin below 105 °C case temperature.

Use Scenario: Main switch in 48 V telecom rectifier with dual-phase interleaved PFC stage.

IC Role / Device Role / Timing Role: Boost switch conducting 35 A RMS, switching at 100 kHz with critical conduction mode (CrM) control.

Use Value: Fast body diode (t_rr = 160 ns) prevents cross-conduction losses during phase interleaving, reducing total system EMI by 8 dBμV.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level MPPT converters feeding central inverters.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch blocking up to 1000 V DC link, turned on/off at <20 kHz.

Use Value: 600 V V_DS rating with 508 mJ UIS energy ensures survivability during lightning-induced surges on rooftop arrays.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC).

IC Role / Device Role / Timing Role: Half-bridge upper device switching at 8 kHz with 150 °C junction temperature cycling.

Use Value: R_thJC = 0.4 °C/W and 150 °C T_Jmax allow sustained 25 A continuous current without derating in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2	R_DS(on) = 0.065 Ω, Q_g = 145 nC, t_rr = 220 ns, TO-247 package	Higher switching loss due to +15 % Q_g and slower diode; requires larger heatsink	Prefer SIHP38N60EF-GE3 where board space and thermal constraints favor TO-220AB and lower Q_g
IXFH38N60P	R_DS(on) = 0.068 Ω, Q_g = 160 nC, no UIS rating, TO-247 package	Lacks avalanche ruggedness; unsuitable for inductive load switching without external protection	Select SIHP38N60EF-GE3 when unclamped inductive energy handling is required in compact form factor

Compared with STW38N60M2 and IXFH38N60P, SIHP38N60EF-GE3 delivers superior switching efficiency (lower Q_g, faster t_rr) and guaranteed avalanche capability in a smaller TO-220AB package-critical for space-constrained 1U server PSUs and telecom rectifiers.

Availability

SIHP38N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP38N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series, including SIHP38N60EF-GE3, was engineered for high-efficiency, high-reliability switching in 400–600 V DC bus systems-targeting telecom rectifiers, server SMPS, and renewable energy converters where low Q_g and fast body diodes are essential.

FAQ

What is the maximum continuous drain current rating for SIHP38N60EF-GE3 at 100 °C case temperature?

The SIHP38N60EF-GE3 has a continuous drain current rating of 25 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 40 A rating at 25 °C reflects thermal limitations of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The SIHP38N60EF-GE3 maintains R_DS(on) stability across this range due to its positive V_GS(th) temperature coefficient.

Does SIHP38N60EF-GE3 have an avalanche energy rating, and how is it tested?

Yes, the SIHP38N60EF-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 508 mJ at T_J = 25 °C, tested per V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6.0 A. This rating confirms ruggedness against transient overvoltage events in hard-switched topologies. The SIHP38N60EF-GE3 does not specify repetitive avalanche capability, so system-level protection must limit stress to single-pulse conditions.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP38N60EF-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHP38N60EF-GE3 body diode is 160 ns, measured at T_J = 25 °C, I_F = I_S = 23.5 A, dI/dt = 100 A/μs, and V_R = 400 V. This value is critical for minimizing commutation losses in synchronous rectification and half-bridge configurations. The SIHP38N60EF-GE3 achieves this performance via optimized epitaxial layer doping and lifetime control, enabling reliable operation above 100 kHz.

Is SIHP38N60EF-GE3 compatible with standard TO-220AB footprints and heatsinks?

Yes, the SIHP38N60EF-GE3 uses the industry-standard TO-220AB package with 2.54 mm lead pitch, 15.8 mm body width, and isolated metal tab for direct heatsink mounting. Its mechanical dimensions match JEDEC MS-001AC, ensuring compatibility with existing PCB layouts and thermal interface materials. The SIHP38N60EF-GE3 tab is electrically connected to the drain, requiring proper isolation when mounted to grounded heatsinks.

What gate drive voltage is required to fully enhance SIHP38N60EF-GE3, and what is its threshold voltage range?

The SIHP38N60EF-GE3 is fully enhanced at V_GS = 10 V, delivering R_DS(on) = 0.061 Ω (typ). Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V at I_D = 250 μA, confirming compatibility with standard 10 V gate drivers. The SIHP38N60EF-GE3 is not a logic-level device; using 5 V drive results in significantly higher R_DS(on) and unacceptable conduction loss, so 10 V ±10 % drive is mandatory for rated performance.

SIHP38N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3576 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP38N60EF-GE3 FAQ

1.How can I place an order for SIHP38N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP38N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP38N60EF-GE3 reliable?

The price and inventory of SIHP38N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP38N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP38N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP38N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP38N60EF-GE3?

SIHP38N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP38N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP38N60EF-GE3?

For technical support, including SIHP38N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP38N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP38N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP38N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP38N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP38N60EF-GE3?

All SIHP38N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP38N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP38N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP38N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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