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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP38N60E-GE3

Name: SIHP38N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP38N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP38N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP38N60E-GE3.pdf

Description:: MOSFET N-CH 600V 43A TO220AB

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Product details

Overview

SIHP38N60E-GE3 from Vishay Siliconix is a 600 V, 43 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.056 Ω at V_GS = 10 V, Q_g = 122 nC (typ), and avalanche-rated E_AS = 614 mJ - optimized for high-efficiency server SMPS and PFC stages.

For engineers reviewing the SIHP38N60E-GE3 datasheet, SIHP38N60E-GE3 pinout, SIHP38N60E-GE3 application, or SIHP38N60E-GE3 equivalent, key selection criteria include conduction loss (R_DS(on)), switching efficiency (Q_g, C_iss), thermal performance (R_thJC = 0.4 °C/W), and unclamped inductive switching robustness.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and cell pitch to achieve low FOM (R_DS(on) × Q_g). Its body diode exhibits t_rr = 491 ns (typ) and Q_rr = 8.4 μC at I_F = 19 A, enabling moderate-frequency hard-switched operation without excessive diode losses.

The device operates with V_GS(th) = 2.0–4.0 V and supports gate drive at 10 V, delivering stable R_DS(on) across –55 °C to +150 °C. Its dV/dt immunity of 100 V/ns at T_J = 125 °C ensures noise resilience in high-dV/dt power converter nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient spikes in telecom/PFC applications
R_DS(on) typ	0.056 Ω @ V_GS = 10 V - enables ≤4.1 W conduction loss at 9.5 A RMS (e.g., 1 kW PFC stage)
Q_g max	183 nC - determines gate driver current requirement (~1.8 A peak for 100 ns turn-on with 10 V swing)
E_AS	614 mJ - guarantees single-pulse ruggedness under unclamped inductive switching up to I_AS = 6.6 A
R_thJC	0.4 °C/W - allows 27 A continuous current at T_C = 100 °C with ≤10.8 °C junction rise above case
C_iss	3600 pF - impacts gate drive power loss and Miller-induced oscillation risk in high-frequency half-bridges
t_r/t_f	58/50 ns (typ) - sets minimum practical switching period (~500 kHz max with 20 % dead time in hard-switched topologies)

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 4.8 mm creepage/clearance, and 1.6 mm lead-to-case distance per JEDEC TO-220 outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires <183 nC charge to fully enhance; sensitive to ESD (±30 V rating)
D (Drain)	High-side power terminal	Connected to drain metallization and heatsink tab; carries full load current and withstands 600 V blocking
S (Source)	Reference node	Serves as return path for load current and gate drive reference; forms Kelvin source connection in layout-critical designs

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.8 Ω·nC - reduces combined conduction + switching loss in 100–300 kHz PFC and LLC resonant converters
Avalanche energy rating	614 mJ - eliminates need for external snubbers in flyback or forward converter primary switches
Ultra-low Q_gd/Q_g ratio	62/183 ≈ 34 % - minimizes Miller plateau duration and improves dv/dt immunity during turn-off
Low C_iss	3600 pF - lowers gate drive power dissipation and enables use of cost-effective 1–2 A gate drivers
Body diode Q_rr	8.4 μC - limits reverse recovery loss in synchronous rectification and bidirectional DC/DC topologies

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end with active PFC and LLC resonant DC/DC stage. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, operating at 100–200 kHz with zero-voltage switching assist. Use Value: 0.056 Ω R_DS(on) reduces conduction loss by ~25 % vs. legacy 0.075 Ω devices, improving full-load efficiency by 0.4–0.6 %.	Use Scenario: Output rectification and isolation in 48 V distributed power architecture (DPA) modules. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck or phase-shifted full-bridge, driven with precise timing control. Use Value: Low Q_rr (8.4 μC) and fast t_rr (491 ns) minimize reverse recovery cross-conduction loss during dead-time transitions.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC inverter leg, subject to repetitive 600 V blocking and 15–25 kHz PWM. Use Value: 600 V V_DS rating and 100 V/ns dV/dt immunity ensure reliable operation under fast-rising grid fault transients.	Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase IGBT/MOSFET inverter, conducting 27 A continuous at T_C = 100 °C. Use Value: R_thJC = 0.4 °C/W enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end with active PFC and LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, operating at 100–200 kHz with zero-voltage switching assist.

Use Value: 0.056 Ω R_DS(on) reduces conduction loss by ~25 % vs. legacy 0.075 Ω devices, improving full-load efficiency by 0.4–0.6 %.

Use Scenario: Output rectification and isolation in 48 V distributed power architecture (DPA) modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck or phase-shifted full-bridge, driven with precise timing control.

Use Value: Low Q_rr (8.4 μC) and fast t_rr (491 ns) minimize reverse recovery cross-conduction loss during dead-time transitions.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC inverter leg, subject to repetitive 600 V blocking and 15–25 kHz PWM.

Use Value: 600 V V_DS rating and 100 V/ns dV/dt immunity ensure reliable operation under fast-rising grid fault transients.

Use Scenario: Inverter output stage in 3–7.5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase IGBT/MOSFET inverter, conducting 27 A continuous at T_C = 100 °C.

Use Value: R_thJC = 0.4 °C/W enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP38N60M2	R_DS(on) = 0.055 Ω (typ), Q_g = 140 nC, TO-220FP package (lower PD = 200 W)	Limited to lower-power SMPS due to reduced thermal capability (R_thJC = 0.625 °C/W)	Prefer SIHP38N60E-GE3 for >2 kW designs requiring higher PD and lower R_thJC
IXFH38N60P	R_DS(on) = 0.065 Ω (max), Q_g = 160 nC, includes integrated gate resistor (10 Ω)	Higher conduction loss and slower switching; suited for cost-sensitive industrial motor drives	Choose SIHP38N60E-GE3 when optimizing for efficiency in telecom/server power where gate drive is externally optimized

Compared with STP38N60M2 and IXFH38N60P, SIHP38N60E-GE3 delivers superior thermal performance (R_thJC = 0.4 °C/W) and lowest Q_g-normalized switching loss, making it optimal for high-density, high-efficiency 600 V power conversion where thermal headroom and gate drive efficiency are critical.

Availability

SIHP38N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP38N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs, including SIHP38N60E-GE3, are engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy power systems where low R_DS(on) × Q_g and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHP38N60E-GE3 at 100 °C case temperature?

The SIHP38N60E-GE3 has a continuous drain current rating of 27 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and accounts for thermal derating beyond 25 °C ambient, with a linear derating factor of 2.5 W/°C above T_C = 25 °C. The SIHP38N60E-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHP38N60E-GE3 have an integrated body diode, and what are its key recovery characteristics?

Yes, SIHP38N60E-GE3 includes an integral reverse p–n junction body diode. Its key recovery specs are t_rr = 491 ns (typ), Q_rr = 8.4 μC (typ), and I_RRM = 26 A (max), measured at T_J = 25 °C, I_F = 19 A, dI/dt = 100 A/μs, and V_R = 25 V. These values enable predictable reverse recovery behavior in hard-switched topologies. The SIHP38N60E-GE3 body diode is not optimized for ultrafast recovery but provides robust performance in standard PFC and inverter applications.

What is the gate threshold voltage range for SIHP38N60E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHP38N60E-GE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and ensures full enhancement well below the ±30 V absolute maximum V_GS. Because the SIHP38N60E-GE3 is not a logic-level device, 5 V drive is insufficient for low R_DS(on); operation requires ≥10 V to achieve the rated 0.056 Ω on-resistance.

Is SIHP38N60E-GE3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, SIHP38N60E-GE3 is avalanche energy rated with a guaranteed single-pulse unclamped inductive switching (UIS) energy of 614 mJ, tested per conditions in Note b: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 6.6 A. This rating validates ruggedness in inductive load switching and transient overvoltage events. The SIHP38N60E-GE3 is not rated for repetitive avalanche operation unless explicitly validated in the target circuit.

What thermal resistance values apply to SIHP38N60E-GE3, and how do they impact heatsink design?

The SIHP38N60E-GE3 has a maximum junction-to-case thermal resistance R_thJC of 0.4 °C/W, measured from junction to the drain tab. Its junction-to-ambient R_thJA is not characterized for standalone use (marked "–" in datasheet) due to dependence on PCB layout and heatsinking. For thermal design, engineers must size heatsinks based on R_thJC plus interface resistance and heatsink thermal resistance. The SIHP38N60E-GE3's low R_thJC enables compact thermal solutions in high-power density applications.

SIHP38N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 183 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP38N60E-GE3 FAQ

1.How can I place an order for SIHP38N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP38N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP38N60E-GE3 reliable?

The price and inventory of SIHP38N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP38N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP38N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP38N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP38N60E-GE3?

SIHP38N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP38N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP38N60E-GE3?

For technical support, including SIHP38N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP38N60E-GE3 requirements.

6.How does Aetrix verify that SIHP38N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP38N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP38N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP38N60E-GE3?

All SIHP38N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP38N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP38N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP38N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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