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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP4N80E-BE3

Name: SIHP4N80E-BE3
Brand: Vishay Siliconix
SKU: SIHP4N80E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP4N80E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP4N80E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP4N80E-BE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 56 mJ single-pulse avalanche energy - designed for high-voltage switching in PFC and SMPS stages of server and telecom power supplies.

For engineers reviewing the SIHP4N80E-BE3 datasheet, SIHP4N80E-BE3 pinout, SIHP4N80E-BE3 application, or SIHP4N80E-BE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 1.8 °C/W) for reliable conduction and switching loss management.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility, and its low C_iss (622 pF) and C_oss (34 pF) support fast, efficient switching at elevated bus voltages up to 480 V.

The integrated body diode exhibits 248 ns typical reverse recovery time (trr) and 1.4 μC Q_rr at 25 °C, with rated diode forward current (I_S = 4.4 A) and pulsed capability (I_SM = 11 A), making it suitable for freewheeling and synchronous rectification roles where controlled recovery is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports DC-link operation in 400 V AC-input PFC and 600 V DC bus SMPS without derating
R_DS(on) typ	1.1 Ω @ V_GS = 10 V - enables <4.3 W conduction loss at 2 A continuous drain current
Q_g max	32 nC - reduces gate drive power and enables use with low-current drivers in high-frequency designs
E_AS	56 mJ - provides validated unclamped inductive switching margin for flyback and resonant topologies
R_thJC	1.8 °C/W - allows 69 W power dissipation with ≤125 °C case-to-ambient ΔT under heatsink mounting
C_iss	622 pF - limits Miller-induced turn-on risk and eases gate driver sizing for 100–500 kHz operation
I_D cont @ T_C=100°C	2.7 A - defines usable current envelope in thermally constrained industrial enclosures

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and JEDEC-compliant outline for mechanical interchangeability and heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 1.2 Ω typical gate input resistance minimizes ringing with 9.1 Ω external gate resistor
D (Drain)	High-side power terminal	Connected to TO-220AB metal tab; electrically tied to drain; requires isolation from heatsink unless system ground referenced
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	35.2 Ω·nC - improves efficiency trade-off between conduction and switching losses in 100–300 kHz PFC stages
Avalanche-rated (UIS)	56 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching and fault transients
Low C_iss and C_oss	622 pF / 34 pF - reduces capacitive loading on gate driver and minimizes stored output energy (E_oss = 0.5·C_oss·V²)
Enhanced body diode recovery	trr = 248 ns, Q_rr = 1.4 μC - lowers diode switching loss and EMI in discontinuous conduction mode (DCM) operation
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter switch in 3.3 kW front-end PFC stage operating at 70 kHz with 400 V AC input. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into boost inductor; operates in continuous conduction mode (CCM). Use Value: 1.1 Ω R_DS(on) and 32 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on standard extruded heatsink.	Use Scenario: Primary-side switch in 2 kW telecom rectifier with universal AC input and active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC bus; subjected to repetitive clamped inductive stress during reset cycles. Use Value: 56 mJ E_AS rating ensures reliable operation under transient overloads without failure, reducing field return risk.
Solar PV Inverter DC-Link	Industrial Motor Drive IGBT Gate Driver Stage
Use Scenario: DC-link switching device in string-level 10 kW photovoltaic inverter with 1000 V DC input. IC Role / Device Role / Timing Role: High-side switch in auxiliary supply or auxiliary DC-DC converter powering gate drivers and sensors. Use Value: 800 V V_DS rating accommodates 1000 V DC bus with 20% safety margin; TO-220AB package simplifies replacement in legacy designs.	Use Scenario: Isolated gate driver power switch supplying ±15 V bias to IGBT half-bridge in 7.5 kW HVAC inverter. IC Role / Device Role / Timing Role: Regulated DC-DC primary switch delivering stable gate supply under variable load and temperature. Use Value: Low C_iss (622 pF) and fast turn-on delay (12 ns) ensure precise timing control and minimal cross-conduction risk in multi-rail bias generation.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter switch in 3.3 kW front-end PFC stage operating at 70 kHz with 400 V AC input.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into boost inductor; operates in continuous conduction mode (CCM).

Use Value: 1.1 Ω R_DS(on) and 32 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on standard extruded heatsink.

Use Scenario: Primary-side switch in 2 kW telecom rectifier with universal AC input and active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC bus; subjected to repetitive clamped inductive stress during reset cycles.

Use Value: 56 mJ E_AS rating ensures reliable operation under transient overloads without failure, reducing field return risk.

Solar PV Inverter DC-Link

Industrial Motor Drive IGBT Gate Driver Stage

Use Scenario: DC-link switching device in string-level 10 kW photovoltaic inverter with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in auxiliary supply or auxiliary DC-DC converter powering gate drivers and sensors.

Use Value: 800 V V_DS rating accommodates 1000 V DC bus with 20% safety margin; TO-220AB package simplifies replacement in legacy designs.

Use Scenario: Isolated gate driver power switch supplying ±15 V bias to IGBT half-bridge in 7.5 kW HVAC inverter.

IC Role / Device Role / Timing Role: Regulated DC-DC primary switch delivering stable gate supply under variable load and temperature.

Use Value: Low C_iss (622 pF) and fast turn-on delay (12 ns) ensure precise timing control and minimal cross-conduction risk in multi-rail bias generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 4 A, R_DS(on) = 1.4 Ω, Q_g = 25 nC, TO-220FP package (full-pack)	Higher R_DS(on) increases conduction loss by ~27%; lower Q_g improves switching speed but reduces drive robustness	Prefer when space-constrained layouts require insulated package; avoid where thermal margin is tight
IXTP4N80L	800 V, 4 A, R_DS(on) = 1.2 Ω, Q_g = 28 nC, TO-220AB, logic-level (V_GS(th) = 1.0–2.5 V)	Lower gate threshold enables 5 V drive but increases susceptibility to noise-induced turn-on; slightly higher R_DS(on)	Select only with dedicated gate protection circuitry; not drop-in for 10 V gate drive systems

Compared with STP4NK80ZFP and IXTP4N80L, SIHP4N80E-BE3 delivers the lowest R_DS(on) × Q_g FOM among TO-220AB 800 V MOSFETs, offering superior thermal efficiency in thermally demanding PFC and SMPS applications without requiring gate drive redesign.

Availability

SIHP4N80E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHP4N80E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHP4N80E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching efficiency and ruggedness in hard-switched power conversion stages including PFC, SMPS, and motor drives.

FAQ

What is the maximum continuous drain current rating for SIHP4N80E-BE3 at 100 °C case temperature?

The SIHP4N80E-BE3 has a maximum continuous drain current (I_D) of 2.7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 4.3 A rating at 25 °C, based on a linear derating factor of 0.56 W/°C and R_thJC = 1.8 °C/W. Designers must verify heatsink performance to maintain case temperature within this limit during sustained operation.

Does SIHP4N80E-BE3 support 10 V gate drive, and what is its gate threshold voltage range?

Yes, SIHP4N80E-BE3 is fully compatible with 10 V gate drive. Its gate-source threshold voltage (V_GS(th)) is specified from 2.0 V to 4.0 V at I_D = 250 μA, ensuring reliable turn-on with standard logic-level or microcontroller-driven gate drivers. The 1.1 Ω typical gate input resistance further stabilizes switching behavior under typical PCB layout parasitics.

Is SIHP4N80E-BE3 avalanche-rated, and what is its single-pulse energy rating?

Yes, SIHP4N80E-BE3 is fully rated for unclamped inductive switching (UIS). Its single-pulse avalanche energy (E_AS) is 56 mJ under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.0 A. This rating validates its ruggedness in flyback, LLC, and other topologies subject to inductive energy dump.

What is the thermal resistance from junction to case (R_thJC) for SIHP4N80E-BE3, and how does it impact heatsink design?

The SIHP4N80E-BE3 has a maximum junction-to-case thermal resistance (R_thJC) of 1.8 °C/W. This low value enables efficient heat transfer from the die to the heatsink via the TO-220AB drain-connected tab. For example, at 69 W maximum power dissipation, a 1.8 °C/W R_thJC implies only a 124 °C junction-to-case temperature rise - allowing safe operation below the 150 °C T_J max when paired with appropriate heatsinking.

How does the body diode performance of SIHP4N80E-BE3 compare to standard MOSFETs in freewheeling applications?

The SIHP4N80E-BE3 features an optimized body diode with 248 ns typical reverse recovery time (t_rr) and 1.4 μC Q_rr at 25 °C, significantly better than legacy 800 V MOSFETs. Its 4.4 A continuous source-drain current rating and 11 A pulsed capability support robust freewheeling in DCM boost and flyback converters, reducing diode-related switching loss and EMI without requiring external Schottky supplementation.

SIHP4N80E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP4N80E-BE3 FAQ

1.How can I place an order for SIHP4N80E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP4N80E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP4N80E-BE3 reliable?

The price and inventory of SIHP4N80E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP4N80E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP4N80E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP4N80E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP4N80E-BE3?

SIHP4N80E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP4N80E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP4N80E-BE3?

For technical support, including SIHP4N80E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP4N80E-BE3 requirements.

6.How does Aetrix verify that SIHP4N80E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP4N80E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP4N80E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP4N80E-BE3?

All SIHP4N80E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP4N80E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP4N80E-BE3 part is unused and in its original packaging.

Return procedure for SIHP4N80E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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