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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP4N80E-GE3

Name: SIHP4N80E-GE3
Brand: Vishay Siliconix
SKU: SIHP4N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP4N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP4N80E-GE3.pdf

Description:: MOSFET N-CH 800V 4.3A TO220AB

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Product details

Overview

SIHP4N80E-GE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 56 mJ single-pulse avalanche energy - optimized for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP4N80E-GE3 datasheet, SIHP4N80E-GE3 pinout, SIHP4N80E-GE3 application, or SIHP4N80E-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/Q_gd ratio for reduced switching loss, avalanche-rated ruggedness, and TO-220AB thermal performance with R_thJC = 1.8 °C/W.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 800 V breakdown voltage supports 400 V DC bus designs with 100 % margin, while the 1.1 Ω R_DS(on) at 25 °C enables efficient conduction at ≤4.3 A continuous drain current (T_C = 25 °C).

The MOSFET integrates a fast-recovery body diode (t_rr = 248 ns typ., Q_rr = 1.4 μC) and exhibits low C_iss (622 pF) and C_oss (34 pF), supporting high-frequency operation up to 100 kHz in SMPS and PFC circuits without excessive drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V DC-link applications with full safety margin against transients
R_DS(on) typ. @ 10 V	1.1 Ω - delivers ≤4.7 W conduction loss at 2 A continuous drain current
Q_g max	32 nC - enables efficient gate driving with standard 1–2 A peak drivers
E_AS	56 mJ - provides robust unclamped inductive switching capability without external snubbers
t_rr typ.	248 ns - minimizes reverse recovery loss in bridge-leg and synchronous rectifier configurations
R_thJC	1.8 °C/W - allows 69 W power dissipation with ≤124 °C junction rise above 25 °C case
C_iss typ.	622 pF - reduces Miller-induced turn-on risk and eases gate drive design

Pinout & Package

SIHP4N80E-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 69 W maximum power dissipation at T_C = 25 °C and featuring 1.8 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal for channel modulation	Accepts 0–10 V logic-level gate drive; requires <32 nC charge for full enhancement
D (Drain)	Main high-voltage current path output	Connected to internal die backside; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential
S (Source)	Reference node for gate drive and current return	Provides low-impedance return path; body diode anode - critical for freewheeling path integrity

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	35.2 Ω·nC - balances conduction and switching losses for high-efficiency 65–100 kHz PFC stages
Avalanche energy rating	56 mJ single-pulse - eliminates need for external clamping in inductive load switching
Ultra-low Q_gd/Q_g ratio	6/32 = 18.8 % - suppresses Miller plateau duration and improves dV/dt immunity
Body diode softness factor	Q_rr/I_RRM = 0.15 μC/A - reduces EMI and voltage overshoot during diode commutation
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 48 V / 3 kW telecom rectifiers with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage primary switch handling 380–400 V DC input, operating at 100 kHz with zero-voltage switching assistance. Use Value: 800 V V_DS and 56 mJ E_AS ensure reliable operation under line surges and transformer leakage spikes without derating.	Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted server PSUs. IC Role / Device Role / Timing Role: Fast-switching boost switch controlling AC line rectified input to generate stable 400 V DC bus. Use Value: Low Q_g (16 nC typ.) and C_iss (622 pF) minimize gate drive loss and enable clean 65 kHz switching with minimal dead-time penalty.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side IGBT co-driver or auxiliary DC-link switch in three-level NPC topologies. Use Value: Avalanche rating and 150 °C max junction temperature support outdoor deployment with wide ambient variation and infrequent overvoltage events.	Use Scenario: Braking chopper in 3-phase VFDs for HVAC and pump control (0.75–2.2 kW range). IC Role / Device Role / Timing Role: Unidirectional energy-dump switch across DC-link capacitor during regenerative braking. Use Value: 4.3 A continuous current and 1.1 Ω R_DS(on) allow compact heatsinking while sustaining repetitive 11 A pulsed braking currents.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 48 V / 3 kW telecom rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage primary switch handling 380–400 V DC input, operating at 100 kHz with zero-voltage switching assistance.

Use Value: 800 V V_DS and 56 mJ E_AS ensure reliable operation under line surges and transformer leakage spikes without derating.

Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted server PSUs.

IC Role / Device Role / Timing Role: Fast-switching boost switch controlling AC line rectified input to generate stable 400 V DC bus.

Use Value: Low Q_g (16 nC typ.) and C_iss (622 pF) minimize gate drive loss and enable clean 65 kHz switching with minimal dead-time penalty.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side IGBT co-driver or auxiliary DC-link switch in three-level NPC topologies.

Use Value: Avalanche rating and 150 °C max junction temperature support outdoor deployment with wide ambient variation and infrequent overvoltage events.

Use Scenario: Braking chopper in 3-phase VFDs for HVAC and pump control (0.75–2.2 kW range).

IC Role / Device Role / Timing Role: Unidirectional energy-dump switch across DC-link capacitor during regenerative braking.

Use Value: 4.3 A continuous current and 1.1 Ω R_DS(on) allow compact heatsinking while sustaining repetitive 11 A pulsed braking currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 3.7 A, R_DS(on) = 1.4 Ω, Q_g = 24 nC, TO-220FP package (full-pack)	Lower current rating and higher R_DS(on); lacks specified E_AS rating	Preferred where space-constrained mounting favors insulated package, but requires verification of avalanche robustness in inductive loads
IXTH4N80L	800 V, 4.0 A, R_DS(on) = 1.2 Ω, Q_g = 27 nC, TO-247AC package	Higher thermal resistance (R_thJC = 2.5 °C/W), larger footprint, no documented UIS rating	Selected when higher peak current headroom is needed and PCB layout accommodates TO-247; not drop-in due to pinout and thermal interface differences

Compared with STP4NK80ZFP and IXTH4N80L, SIHP4N80E-GE3 offers superior avalanche ruggedness, lower on-resistance, and tighter thermal resistance - making it optimal for mission-critical PFC and telecom rectifier designs where reliability under transient stress is non-negotiable.

Availability

SIHP4N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHP4N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified devices.

The SIHP4N80E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered for high-voltage, medium-current switching in industrial and communications power systems where ruggedness, low switching loss, and consistent parametric stability are critical.

FAQ

What is the maximum continuous drain current rating for SIHP4N80E-GE3 at 100 °C case temperature?

The SIHP4N80E-GE3 supports 2.7 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP4N80E-GE3 maintains R_DS(on) stability across this range, with typical on-resistance rising to ~1.5 Ω at 125 °C junction temperature.

Does SIHP4N80E-GE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHP4N80E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 56 mJ, tested under V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.0 A. This rating is validated per JEDEC JESD24-11 and confirms robustness against inductive switching stresses without external protection components. The SIHP4N80E-GE3 datasheet specifies no repetitive avalanche rating.

What is the gate threshold voltage range for SIHP4N80E-GE3, and how does it affect drive circuit design?

The SIHP4N80E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming standard-level (not logic-level) drive requirements. This means reliable enhancement requires ≥10 V gate drive, and drive circuits must supply sufficient current to charge 32 nC total gate charge quickly. The SIHP4N80E-GE3 is not compatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.

How does the body diode performance of SIHP4N80E-GE3 compare to discrete ultrafast diodes in PFC applications?

The SIHP4N80E-GE3 body diode delivers t_rr = 248 ns (typ.), Q_rr = 1.4 μC, and V_SD = 1.2 V at I_S = 2 A, offering integrated freewheeling with moderate recovery characteristics. While slower than dedicated ultrafast diodes (e.g., <100 ns t_rr), its soft recovery reduces EMI and voltage overshoot. In continuous conduction mode PFC, the SIHP4N80E-GE3 body diode is typically not conducting - making its recovery behavior secondary to MOSFET switching parameters.

Is SIHP4N80E-GE3 suitable for use in isolated flyback converters operating above 600 V input?

Yes, SIHP4N80E-GE3 is rated for 800 V V_DS with 850 V maximum at T_J = 150 °C, making it suitable for universal-input (85–265 V AC) or high-line (≥300 V DC) flyback converters where reflected output voltage plus leakage spike remains below 750 V. Its 56 mJ E_AS rating helps absorb worst-case leakage energy. The SIHP4N80E-GE3 must be paired with appropriate snubber design and layout practices to manage dv/dt stress.

SIHP4N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP4N80E-GE3 FAQ

1.How can I place an order for SIHP4N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP4N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP4N80E-GE3 reliable?

The price and inventory of SIHP4N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP4N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP4N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP4N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP4N80E-GE3?

SIHP4N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP4N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP4N80E-GE3?

For technical support, including SIHP4N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP4N80E-GE3 requirements.

6.How does Aetrix verify that SIHP4N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP4N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP4N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP4N80E-GE3?

All SIHP4N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP4N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP4N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHP4N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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