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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP5N50D-E3

Name: SIHP5N50D-E3
Brand: Vishay Siliconix
SKU: SIHP5N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP5N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP5N50D-E3.pdf

Description:: MOSFET N-CH 500V 5.3A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP5N50D-E3 from Vishay Siliconix is a 500 V, 5.3 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 1.5 Ω max R_DS(on) at V_GS = 10 V, 20 nC max total gate charge, and 28.8 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and industrial motor drives.

For engineers reviewing the SIHP5N50D-E3 datasheet, SIHP5N50D-E3 pinout, SIHP5N50D-E3 application, or SIHP5N50D-E3 equivalent, this part supports fast-switching, low-loss operation in 400–500 V DC-link topologies with rugged body diode recovery (t_rr = 320 ns) and validated unclamped inductive switching performance.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications, with low C_iss (325 pF typ.) and C_oss (34 pF typ.) enabling reduced capacitive losses. Its 1.2 Ω typical R_DS(on) at 2.5 A/10 V ensures low conduction loss in continuous-current operation up to T_C = 100 °C.

The device integrates an avalanche-rated body diode (E_AS = 28.8 mJ) and exhibits dV/dt immunity of 24 V/ns at T_J = 125 °C, supporting reliable operation in noisy industrial environments without external snubbers in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max	1.5 Ω at V_GS = 10 V, I_D = 2.5 A - enables <1.9 W conduction loss at 5 A
Q_g max	20 nC - allows efficient gate drive with standard 1 A peak drivers at 100 kHz+ switching
E_AS	28.8 mJ - withstands unclamped inductive energy in relay/motor control without failure
t_rr	320 ns - limits reverse recovery current overshoot (I_RRM = 8 A) during hard commutation
R_thJC	1.2 °C/W - delivers 104 W P_D with ≤125 °C junction rise over heatsink at T_C = 25 °C
V_GS(th)	3–5 V - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 1.2 °C/W junction-to-case thermal resistance, and industry-standard footprint per Vishay drawing 66542.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V gate drive to fully enhance channel; input capacitance C_iss = 325 pF affects driver sizing
D (Drain)	High-side power output	Connected to heatsink tab; rated for 500 V blocking and 10 A pulsed current
S (Source)	Power return/reference	Common node for gate drive return and current sensing; body diode anode is internally tied here

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	1.5 Ω × 20 nC = 30 Ω·nC - balances conduction and switching loss for 50–200 kHz SMPS
Avalanche-rated operation	28.8 mJ E_AS - eliminates need for external clamping in flyback or active clamp circuits
Rugged body diode	t_rr = 320 ns, Q_rr = 1.2 μC - reduces diode-induced switching loss and EMI in bridge configurations
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in high-noise motor drive or welding inverters

Applications

Server Power Supplies	Induction Heating Inverters
Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifier with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch operating at 100 kHz with zero-voltage switching assist. Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce combined conduction + switching loss to <3.2 W at full load.	Use Scenario: Half-bridge leg in 20 kHz resonant induction heater driving 15 kW load. IC Role / Device Role / Timing Role: Fast-switching power switch handling repetitive unclamped inductive energy during zero-current switching transitions. Use Value: 28.8 mJ E_AS rating and 320 ns t_rr prevent diode failure under high dI/dt (100 A/μs) conditions.
Industrial Motor Drives	Battery Charger DC-DC Stages
Use Scenario: Output stage switch in 3-phase 7.5 HP VFD with 600 V DC link. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg with integrated freewheeling path. Use Value: Body diode forward voltage V_SD = 1.2 V at 4 A enables low-loss regeneration without external diodes.	Use Scenario: Primary switch in LLC resonant converter for 3 kW EV on-board charger. IC Role / Device Role / Timing Role: High-efficiency main switch operating near resonance with minimal dead-time sensitivity. Use Value: Low C_oss (34 pF) and Cr_ss (6 pF) minimize capacitive losses and improve ZVS behavior across line/load range.

Server Power Supplies

Induction Heating Inverters

Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifier with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch operating at 100 kHz with zero-voltage switching assist.

Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce combined conduction + switching loss to <3.2 W at full load.

Use Scenario: Half-bridge leg in 20 kHz resonant induction heater driving 15 kW load.

IC Role / Device Role / Timing Role: Fast-switching power switch handling repetitive unclamped inductive energy during zero-current switching transitions.

Use Value: 28.8 mJ E_AS rating and 320 ns t_rr prevent diode failure under high dI/dt (100 A/μs) conditions.

Industrial Motor Drives

Battery Charger DC-DC Stages

Use Scenario: Output stage switch in 3-phase 7.5 HP VFD with 600 V DC link.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg with integrated freewheeling path.

Use Value: Body diode forward voltage V_SD = 1.2 V at 4 A enables low-loss regeneration without external diodes.

Use Scenario: Primary switch in LLC resonant converter for 3 kW EV on-board charger.

IC Role / Device Role / Timing Role: High-efficiency main switch operating near resonance with minimal dead-time sensitivity.

Use Value: Low C_oss (34 pF) and Cr_ss (6 pF) minimize capacitive losses and improve ZVS behavior across line/load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.6 Ω, Q_g = 22 nC, TO-220FP package (full-pack)	Lower I_D rating and higher R_DS(on); same avalanche rating but no specified t_rr	Acceptable where peak current ≤4.5 A and board space allows taller TO-220FP profile
IRFP450PBF	500 V, 14 A, R_DS(on) = 0.4 Ω, Q_g = 71 nC, TO-247AC package	Higher current capability but 3.5× larger gate charge increases driver loss and layout complexity	Preferred only when >8 A continuous current or lower R_DS(on) is mandatory; requires larger PCB area and heatsink

Compared with STP5NK50ZFP and IRFP450PBF, SIHP5N50D-E3 offers optimal balance of current rating (5.3 A), gate drive simplicity (20 nC), and thermal performance (1.2 °C/W) in compact TO-220AB-making it ideal for space-constrained 500 V SMPS where efficiency and reliability are prioritized over raw current headroom.

Availability

SIHP5N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHP5N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The D Series Power MOSFETs-including SIHP5N50D-E3-are engineered for high-voltage, medium-current switching in SMPS, motor controls, and welding equipment, emphasizing ruggedness, low FOM, and avalanche survivability.

FAQ

What is the maximum continuous drain current rating for SIHP5N50D-E3 at 100 °C case temperature?

The SIHP5N50D-E3 has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design to maintain junction temperature ≤150 °C. The SIHP5N50D-E3 datasheet confirms this value under V_GS = 10 V conditions.

Does SIHP5N50D-E3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHP5N50D-E3 is avalanche energy rated with E_AS = 28.8 mJ under single-pulse conditions: V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, and I_AS = 5 A. This rating is validated per JEDEC JESD24-11 and applies to unclamped inductive switching events-critical for reliability in motor drive and relay driver applications using SIHP5N50D-E3.

What is the gate threshold voltage range for SIHP5N50D-E3, and how does it affect drive circuit design?

The SIHP5N50D-E3 has a gate-source threshold voltage V_GS(th) of 3–5 V at I_D = 250 μA, ensuring robust turn-on with standard 5 V or 10 V gate drivers. This range avoids unintended conduction from noise while allowing compatibility with both logic-level and standard MOSFET drivers. The SIHP5N50D-E3 specification sheet confirms this min/max spread under controlled test conditions.

Can SIHP5N50D-E3 be used in place of older 500 V MOSFETs like IRF830 in existing designs?

SIHP5N50D-E3 is not a direct drop-in replacement for IRF830 due to differences in R_DS(on) (1.5 Ω vs. 1.5 Ω typ. but 2.0 Ω max for IRF830), Q_g (20 nC vs. 38 nC), and thermal resistance (1.2 °C/W vs. ~1.7 °C/W). While pin-compatible in TO-220AB, the SIHP5N50D-E3's lower Q_g and improved dV/dt immunity may require gate resistor adjustment to optimize switching speed and EMI-verify with actual SIHP5N50D-E3 waveforms.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP5N50D-E3, and why does it matter?

The SIHP5N50D-E3 body diode has a typical reverse recovery time t_rr of 320 ns at T_J = 25 °C, I_F = 2.5 A, dI/dt = 100 A/μs, and V_R = 20 V. This parameter directly impacts switching loss and voltage overshoot in bridge configurations-shorter t_rr reduces diode-induced shoot-through risk and EMI generation, making SIHP5N50D-E3 suitable for high-frequency hard-switched topologies.

SIHP5N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP5N50D-E3 FAQ

1.How can I place an order for SIHP5N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP5N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP5N50D-E3 reliable?

The price and inventory of SIHP5N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP5N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHP5N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP5N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP5N50D-E3?

SIHP5N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP5N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP5N50D-E3?

For technical support, including SIHP5N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP5N50D-E3 requirements.

6.How does Aetrix verify that SIHP5N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP5N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP5N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHP5N50D-E3?

All SIHP5N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP5N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP5N50D-E3 part is unused and in its original packaging.

Return procedure for SIHP5N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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