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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP5N50D-GE3

Name: SIHP5N50D-GE3
Brand: Vishay Siliconix
SKU: SIHP5N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP5N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP5N50D-GE3.pdf

Description:: MOSFET N-CH 500V 5.3A TO220AB

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Product details

Overview

SIHP5N50D-GE3 from Vishay Siliconix is a 500 V, 5.3 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 1.5 Ω max R_DS(on) at V_GS = 10 V, 20 nC max total gate charge, and 28.8 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and industrial motor drives.

For engineers reviewing the SIHP5N50D-GE3 datasheet, SIHP5N50D-GE3 pinout, SIHP5N50D-GE3 application, or SIHP5N50D-GE3 equivalent, key selection criteria include its 1.2 Ω typical R_DS(on), low 325 pF input capacitance, fast 12–24 ns turn-on delay, rugged body diode with 320 ns reverse recovery time, and TO-220AB thermal resistance of 1.2 °C/W junction-to-case.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, with gate threshold voltage (3–5 V) enabling standard 10 V logic-level drive. Its low figure-of-merit (R_DS(on) × Q_g) supports high-efficiency operation in 400 V DC bus applications such as server power supplies.

The integrated body diode is rated for 5 A continuous source-drain current and exhibits 1.2 V forward drop at 4 A and 25 °C. Avalanche-rated design ensures robustness under inductive switching stress, validated per UIS test conditions (L = 2.3 mH, I_AS = 5 A, R_g = 25 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC link designs with 25 % safety margin
R_DS(on) max @ 10 V	1.5 Ω - limits conduction loss to ≤3.8 W at 5.3 A continuous drain current
Q_g max	20 nC - enables efficient 100 kHz switching with ≤2 W gate drive power at 10 V
E_AS	28.8 mJ - withstands unclamped inductive energy without failure under specified test conditions
T_J range	–55 to +150 °C - qualified for industrial ambient environments up to 100 °C case temperature
R_thJC	1.2 °C/W - allows ≥86 W power dissipation with 100 °C case-to-ambient ΔT using heatsink
C_iss	325 pF - reduces Miller-induced shoot-through risk in half-bridge configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.2 °C/W junction-to-case thermal resistance. Mounting requires mechanical isolation unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; 100 nA max leakage ensures stable off-state with high-impedance drivers
D (Drain)	High-voltage power terminal	Connected to TO-220 tab; electrically isolated from mounting surface unless specified; handles 500 V blocking
S (Source)	Power return and reference node	Provides common return path for load current; defines gate-source voltage reference; carries full 5.3 A continuous current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	1.5 Ω × 20 nC = 30 Ω·nC - improves efficiency in high-frequency SMPS by reducing combined conduction and switching losses
Avalanche energy rating	28.8 mJ - eliminates need for external snubbers in moderate-energy inductive loads like welding inverters
Rugged body diode	320 ns t_rr, 1.2 V V_SD - sustains bidirectional current in freewheeling paths without thermal runaway during recovery
High dV/dt immunity	24 V/ns (T_J = 125 °C) - suppresses false turn-on in noisy high-dv/dt environments such as motor drive half-bridges

Applications

Server Power Supplies	Induction Heating
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifiers with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET operating in hard-switched forward or LLC resonant topology. Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin on standard TO-220 heatsinks.	Use Scenario: Half-bridge inverter stage driving 20–50 kHz resonant tank for domestic induction cooktops. IC Role / Device Role / Timing Role: Low-loss switching element handling repetitive 5–10 A peak currents with fast 22 ns fall time. Use Value: 28.8 mJ E_AS and 320 ns t_rr prevent diode-induced failure during zero-voltage switching transitions.
Industrial Motor Drives	Battery Chargers
Use Scenario: Inverter output stage in 750 W brushless DC motor controllers for HVAC blowers. IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge with PWM carrier frequency up to 20 kHz. Use Value: 5.3 A continuous ID and –55 to +150 °C T_J rating ensure reliability across extended industrial temperature cycles.	Use Scenario: Primary switch in 300–500 W offline flyback charger for EV auxiliary batteries. IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) operation. Use Value: 500 V V_DS rating accommodates 380 V PFC output with margin; low C_iss minimizes startup stress during brownout conditions.

Server Power Supplies

Induction Heating

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifiers with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET operating in hard-switched forward or LLC resonant topology.

Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin on standard TO-220 heatsinks.

Use Scenario: Half-bridge inverter stage driving 20–50 kHz resonant tank for domestic induction cooktops.

IC Role / Device Role / Timing Role: Low-loss switching element handling repetitive 5–10 A peak currents with fast 22 ns fall time.

Use Value: 28.8 mJ E_AS and 320 ns t_rr prevent diode-induced failure during zero-voltage switching transitions.

Industrial Motor Drives

Battery Chargers

Use Scenario: Inverter output stage in 750 W brushless DC motor controllers for HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge with PWM carrier frequency up to 20 kHz.

Use Value: 5.3 A continuous ID and –55 to +150 °C T_J rating ensure reliability across extended industrial temperature cycles.

Use Scenario: Primary switch in 300–500 W offline flyback charger for EV auxiliary batteries.

IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) operation.

Use Value: 500 V V_DS rating accommodates 380 V PFC output with margin; low C_iss minimizes startup stress during brownout conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.6 Ω, Q_g = 22 nC, Zener-protected gate	Lower current rating and higher gate charge reduce efficiency in high-duty-cycle SMPS	Prefer SIHP5N50D-GE3 for >5 A continuous loads and tighter thermal constraints
IRFBC40APBF	500 V, 5.4 A, R_DS(on) = 1.4 Ω, Q_g = 26 nC, no avalanche rating	Lacks UIS qualification; higher Q_g increases gate drive loss at >100 kHz	Choose SIHP5N50D-GE3 where inductive fault tolerance or high-frequency operation is required

Compared with STP5NK50ZFP and IRFBC40APBF, SIHP5N50D-GE3 delivers superior avalanche ruggedness, lower gate charge for faster switching, and tighter R_DS(on) tolerance-making it optimal for thermally constrained, high-reliability industrial power stages.

Availability

SIHP5N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating systems, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHP5N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.

The D Series Power MOSFETs-including SIHP5N50D-GE3-are engineered for high-voltage switching in industrial and telecom power conversion, prioritizing low R_DS(on) × Q_g, avalanche robustness, and TO-220 thermal performance.

FAQ

What is the maximum continuous drain current for SIHP5N50D-GE3 at 100 °C case temperature?

The SIHP5N50D-GE3 supports 3.4 A continuous drain current at T_C = 100 °C, derated linearly from 5.3 A at 25 °C using a 0.83 W/°C factor. This value reflects thermal limits under sustained conduction, not transient capability. The SIHP5N50D-GE3 datasheet specifies this limit in Absolute Maximum Ratings Table 1, confirming safe operation within SOA boundaries when heatsinked appropriately.

Does SIHP5N50D-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHP5N50D-GE3 is rated for 28.8 mJ single-pulse avalanche energy (E_AS). It is tested per unclamped inductive switching (UIS) conditions: V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, I_AS = 5 A. This rating confirms robustness against inductive kickback in real-world circuits like motor drives and SMPS transformers-critical for reliability of SIHP5N50D-GE3 in non-snubbered designs.

What is the gate threshold voltage range for SIHP5N50D-GE3, and how does it affect drive requirements?

The SIHP5N50D-GE3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise below 3 V. Because SIHP5N50D-GE3 is not a logic-level device, 5 V-only microcontrollers require level-shifting; full enhancement occurs only above 5 V, making 10 V drive optimal for minimizing R_DS(on).

How does the body diode performance of SIHP5N50D-GE3 compare to standard rectifiers in freewheeling applications?

The SIHP5N50D-GE3 body diode delivers 1.2 V forward voltage at 4 A and 25 °C, with 320 ns reverse recovery time (t_rr) and 1.2 μC Q_rr. While slower than dedicated ultrafast diodes, its ruggedness and co-packaged integration eliminate layout parasitics and simplify PCB routing in synchronous rectification or half-bridge freewheeling-key advantages for compact SIHP5N50D-GE3-based power stages.

Is SIHP5N50D-GE3 RoHS-compliant and halogen-free?

Yes, SIHP5N50D-GE3 is both lead (Pb)-free and halogen-free, as indicated by the "-GE3" suffix in the ordering code. Vishay confirms compliance with JEDEC JS709A and IEC 61249-2-21 standards. This makes SIHP5N50D-GE3 suitable for environmentally regulated markets including EU RoHS and China RoHS, with full material declarations available via Vishay's compliance portal.

SIHP5N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP5N50D-GE3 FAQ

1.How can I place an order for SIHP5N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP5N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP5N50D-GE3 reliable?

The price and inventory of SIHP5N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP5N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP5N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP5N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP5N50D-GE3?

SIHP5N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP5N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP5N50D-GE3?

For technical support, including SIHP5N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP5N50D-GE3 requirements.

6.How does Aetrix verify that SIHP5N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP5N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP5N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP5N50D-GE3?

All SIHP5N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP5N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP5N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHP5N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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