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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP5N80AE-GE3

Name: SIHP5N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP5N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP5N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP5N80AE-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220AB,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP5N80AE-GE3 from Vishay Siliconix is an 800 V, 4.4 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 1.17 Ω R_DS(on) at V_GS = 10 V, 16.5 nC total gate charge, and 17 mJ single-pulse avalanche energy-designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP5N80AE-GE3 datasheet, SIHP5N80AE-GE3 pinout, SIHP5N80AE-GE3 application, or SIHP5N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, integrated Zener ESD protection, and validated UIS ruggedness for hard-switched industrial converters.

Technical Context

This device employs a planar high-voltage silicon process optimized for reduced switching losses and stable R_DS(on) over temperature, with C_iss = 321 pF and C_oss = 20 pF enabling fast turn-on/turn-off under 640 V bus conditions. Its body diode exhibits t_rr = 267 ns and Q_rr = 1.2 μC at 25 °C, supporting moderate-frequency synchronous rectification.

The MOSFET supports gate drive with ±30 V V_GS rating and operates across -55 to +150 °C junction range. Thermal resistance R_thJC = 2 °C/W enables 62.5 W continuous dissipation at T_C = 25 °C, while dv/dt immunity of 70 V/ns at 125 °C ensures robust operation in noisy high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC bus voltages up to 640 V in PFC and SMPS applications with margin
R_DS(on) max	1.35 Ω at 25 °C, V_GS = 10 V - Enables <4.4 A continuous conduction with ≤6.6 W conduction loss at full load
Q_g max	16.5 nC - Reduces gate driver power demand and switching transition time in 100–300 kHz converters
E_AS	17 mJ - Rated for unclamped inductive switching events without failure under defined test conditions (L = 28.2 mH, I_AS = 1.1 A)
C_iss	321 pF - Low input capacitance minimizes Miller effect and improves voltage-controlled switching stability
t_r/t_f	8–16 ns / 28–56 ns - Supports fast edge rates required for high-efficiency hard-switched topologies
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 10 V gate drivers and avoids spurious conduction near 0 V

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 2.0 mm lead spacing, and JEDEC-standard footprint for heatsink attachment and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V drive for full enhancement; Zener-protected against ESD
D	Drain	High-voltage output terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
S	Source	Return path for load current; reference node for gate drive; ties to power ground in low-side switch configuration

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	19.3 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–250 kHz PFC and LLC designs
Avalanche-rated (UIS)	17 mJ single-pulse - Eliminates need for external snubbers in inductive load switching and improves system reliability
Integrated Zener ESD protection	±30 V gate rating with on-chip clamp - Prevents gate oxide damage during board handling and assembly without external components
Low C_oss (20 pF)	Reduces capacitive turn-off loss and improves zero-voltage switching (ZVS) capability in resonant topologies
Body diode Q_rr = 1.2 μC	Enables use in quasi-resonant flyback and freewheeling paths with predictable reverse recovery behavior

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: High-density 48 V output stage in 3 kW front-end AC/DC converter with active PFC and LLC resonant secondary. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in boost PFC circuit operating at 70–100 kHz. Use Value: 800 V rating accommodates 380 V DC link with safety margin; low Q_g reduces gate driver losses and enables compact 10 V drive design.	Use Scenario: 54 V/30 A telecom rectifier module with dual-phase interleaved PFC and phase-shifted full-bridge DC/DC. IC Role / Device Role / Timing Role: High-side switch in interleaved boost cell, driven by isolated gate driver with 100 ns propagation delay. Use Value: Avalanche rating absorbs line transients during grid disturbances; R_thJC = 2 °C/W allows direct mounting to cold plate for 62.5 W dissipation.
Industrial Motor Drive	Renewable Energy Inverter
Use Scenario: 7.5 kW three-phase VFD with 650 V DC bus, using six-pack IGBT replacement with discrete MOSFET half-bridges. IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter leg, commutating at ≤16 kHz with forced air cooling. Use Value: 1.17 Ω R_DS(on) limits conduction loss to <12 W per device at 4.4 A RMS; body diode t_rr < 534 ns prevents shoot-through during dead-time.	Use Scenario: String-level DC/AC microinverter for photovoltaic systems with 800 V open-circuit voltage and MPPT tracking. IC Role / Device Role / Timing Role: DC-link switch in two-stage topology: boost stage followed by H-bridge inverter. Use Value: 800 V V_DS supports >1000 V surge clamping; low C_iss/C_oss ratio improves EMI performance and reduces filter component size.

Server Power Supply

Telecom Rectifier

Use Scenario: High-density 48 V output stage in 3 kW front-end AC/DC converter with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in boost PFC circuit operating at 70–100 kHz.

Use Value: 800 V rating accommodates 380 V DC link with safety margin; low Q_g reduces gate driver losses and enables compact 10 V drive design.

Use Scenario: 54 V/30 A telecom rectifier module with dual-phase interleaved PFC and phase-shifted full-bridge DC/DC.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost cell, driven by isolated gate driver with 100 ns propagation delay.

Use Value: Avalanche rating absorbs line transients during grid disturbances; R_thJC = 2 °C/W allows direct mounting to cold plate for 62.5 W dissipation.

Industrial Motor Drive

Renewable Energy Inverter

Use Scenario: 7.5 kW three-phase VFD with 650 V DC bus, using six-pack IGBT replacement with discrete MOSFET half-bridges.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter leg, commutating at ≤16 kHz with forced air cooling.

Use Value: 1.17 Ω R_DS(on) limits conduction loss to <12 W per device at 4.4 A RMS; body diode t_rr < 534 ns prevents shoot-through during dead-time.

Use Scenario: String-level DC/AC microinverter for photovoltaic systems with 800 V open-circuit voltage and MPPT tracking.

IC Role / Device Role / Timing Role: DC-link switch in two-stage topology: boost stage followed by H-bridge inverter.

Use Value: 800 V V_DS supports >1000 V surge clamping; low C_iss/C_oss ratio improves EMI performance and reduces filter component size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 1.05 Ω, Q_g = 27 nC, TO-220FP package (isolated drain)	Higher current rating but 64 % higher Q_g; lower R_thJC (1.5 °C/W) but smaller die area limits avalanche energy (E_AS = 12 mJ)	Prefer when higher continuous current is needed and gate drive strength permits higher Q_g; avoid where avalanche robustness is critical.
IXTH8N80L2	800 V, 8 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-247 package, no integrated Zener ESD protection	Lower R_DS(on) but significantly higher Q_g and larger footprint; lacks on-chip gate protection requiring external TVS	Select for ultra-low conduction loss in low-frequency (<50 kHz) applications where layout allows external gate protection and thermal mass accommodates TO-247.

Compared with STP8NK80ZFP and IXTH8N80L2, SIHP5N80AE-GE3 offers superior Q_g/R_DS(on) trade-off and built-in ESD protection in a cost-optimized TO-220AB package-making it preferred for space-constrained, medium-power PFC and SMPS where gate drive efficiency and ruggedness are prioritized over peak current rating.

Availability

SIHP5N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for SIHP5N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The SIHP5N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching efficiency, avalanche ruggedness, and thermal stability in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHP5N80AE-GE3 at 100 °C case temperature?

The SIHP5N80AE-GE3 supports 2.8 A continuous drain current at T_C = 100 °C, derated linearly from 4.4 A at 25 °C using a 0.5 W/°C factor. This rating assumes proper heatsinking and ambient conditions compliant with the absolute maximum ratings table in the Vishay datasheet S21-0475-Rev. A. SIHP5N80AE-GE3 must not exceed its 150 °C maximum junction temperature under steady-state operation.

Does SIHP5N80AE-GE3 have integrated ESD protection on the gate?

Yes, SIHP5N80AE-GE3 includes an integrated Zener diode for gate-source ESD protection, rated for ±30 V V_GS. This eliminates the need for external gate protection components in most applications and enhances robustness during PCB handling and assembly. The feature is explicitly documented in the "Features" section and confirmed in the "Absolute Maximum Ratings" table of the official Vishay datasheet.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHP5N80AE-GE3?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode in SIHP5N80AE-GE3 is 1.2 μC, measured at T_J = 25 °C, I_F = 2 A, di/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" table and directly impacts commutation loss and EMI in freewheeling and synchronous rectification applications.

Can SIHP5N80AE-GE3 be used in avalanche mode, and what is its rated energy?

Yes, SIHP5N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 17 mJ, tested under V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.1 A. This rating is verified per JEDEC standards and enables safe operation during transient overloads without external snubbers-critical for PFC and industrial motor drive designs.

What is the thermal resistance from junction to case (R_thJC) for SIHP5N80AE-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHP5N80AE-GE3 is 2 °C/W, measured from the silicon die to the TO-220AB drain tab. This low value enables efficient heat transfer to an external heatsink and supports 62.5 W maximum power dissipation at T_C = 25 °C, as stated in the "Thermal Resistance Ratings" section of the Vishay datasheet.

SIHP5N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 321 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP5N80AE-GE3 FAQ

1.How can I place an order for SIHP5N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP5N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP5N80AE-GE3 reliable?

The price and inventory of SIHP5N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP5N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP5N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP5N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP5N80AE-GE3?

SIHP5N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP5N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP5N80AE-GE3?

For technical support, including SIHP5N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP5N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP5N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP5N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP5N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP5N80AE-GE3?

All SIHP5N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP5N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP5N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP5N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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