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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP690N60E-GE3

Name: SIHP690N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP690N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP690N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP690N60E-GE3.pdf

Description:: MOSFET N-CH 600V 6.4A TO220AB

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Product details

Overview

SIHP690N60E-GE3 from Vishay Siliconix is a 600 V, 6.4 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.60 Ω R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and 9 mJ single-pulse avalanche energy rating-designed for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP690N60E-GE3 datasheet, SIHP690N60E-GE3 pinout, SIHP690N60E-GE3 application, or SIHP690N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) of 17 pF, and rated dv/dt capability of 70 V/ns at T_J = 125 °C-critical for hard-switched 600 V topologies.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for reduced conduction and switching losses in continuous conduction mode (CCM) and transition-mode (TM) PFC circuits. Its low effective output capacitance (C_oss(er) = 17 pF) minimizes turn-off energy loss during high-voltage transitions.

The device integrates an avalanche-rated body diode with t_rr = 146 ns (typ.) and Q_rr = 1.0 μC at T_J = 25 °C, supporting reliable operation in discontinuous conduction mode (DCM) flyback and LLC resonant converters where diode recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server SMPS
R_DS(on) typ	0.60 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 2 A RMS in PFC boost stage
Q_g max	12 nC - determines gate drive power requirement (~1.2 mW at 100 kHz, 10 V swing)
E_AS	9 mJ - ensures robustness against unclamped inductive switching events in motor drive half-bridges
C_oss(er)	17 pF - reduces turn-off switching loss by ~30 % vs. prior generation at V_DS = 480 V
t_r/t_f	9/22 ns (typ.) - supports >500 kHz switching in ZVS/ZCS topologies without excessive ringing
T_J range	–55 to +150 °C - qualified for industrial ambient environments up to 85 °C case temperature

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 2.0 °C/W junction-to-case thermal resistance, and RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; threshold voltage 3.0–5.0 V ensures compatibility with standard PWM controllers
D (Drain)	High-side power terminal	Connected to drain metallization and package tab; requires insulated mounting when heatsink is grounded
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance must be minimized to suppress parasitic oscillation

Key Features

Feature	Design Value
4th-generation E-series silicon	Delivers 22 % lower R_DS(on) × Q_g FOM vs. previous generation, reducing combined conduction/switching loss
Avalanche-rated (UIS)	Guarantees 9 mJ single-pulse energy handling without failure-enables elimination of external snubbers in cost-sensitive PFC designs
Low C_oss(er) (17 pF)	Reduces turn-off loss by storing less energy in output capacitance-critical for high-frequency, high-voltage switching
Body diode t_rr = 146 ns	Enables clean commutation in synchronous rectification and bidirectional DC/DC converters without excessive reverse recovery spikes
dv/dt ruggedness (70 V/ns)	Prevents false turn-on during fast voltage transients in bridge-leg configurations-no external gate clamping required

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Boost PFC stage in 3 kW redundant AC/DC front-end supplying 12 V and 48 V distribution buses. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: 0.60 Ω R_DS(on) and 12 nC Q_g enable >96 % PFC efficiency at full load while maintaining thermal margin on 25 mm² heatsink.	Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch subjected to 400 V DC bus and repetitive 300 ns dv/dt stress during clamp reset. Use Value: 70 V/ns dv/dt rating and 9 mJ E_AS ensure reliable operation without gate oscillation or avalanche-induced degradation over 10-year field life.
PV Inverter	Induction Heating
Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter with transformerless topology. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg handling 600 V DC input and 50 kHz PWM modulation. Use Value: Low C_oss(er) (17 pF) minimizes shoot-through risk and reduces EMI filter size by lowering high-frequency current slew rate.	Use Scenario: Half-bridge switch in 5 kW solid-state induction heater driving 150 kHz resonant tank. IC Role / Device Role / Timing Role: Fast-switching device requiring low Q_gd/Q_gs ratio and stable R_DS(on) across –40 to +125 °C ambient. Use Value: 1.2 S g_fs and ±30 V V_GS rating support robust gate control under high EMI; R_DS(on) drift <15 % from –40 to +150 °C.

Server Power Supply

Telecom Rectifier

Use Scenario: Boost PFC stage in 3 kW redundant AC/DC front-end supplying 12 V and 48 V distribution buses.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 0.60 Ω R_DS(on) and 12 nC Q_g enable >96 % PFC efficiency at full load while maintaining thermal margin on 25 mm² heatsink.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch subjected to 400 V DC bus and repetitive 300 ns dv/dt stress during clamp reset.

Use Value: 70 V/ns dv/dt rating and 9 mJ E_AS ensure reliable operation without gate oscillation or avalanche-induced degradation over 10-year field life.

PV Inverter

Induction Heating

Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter with transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg handling 600 V DC input and 50 kHz PWM modulation.

Use Value: Low C_oss(er) (17 pF) minimizes shoot-through risk and reduces EMI filter size by lowering high-frequency current slew rate.

Use Scenario: Half-bridge switch in 5 kW solid-state induction heater driving 150 kHz resonant tank.

IC Role / Device Role / Timing Role: Fast-switching device requiring low Q_gd/Q_gs ratio and stable R_DS(on) across –40 to +125 °C ambient.

Use Value: 1.2 S g_fs and ±30 V V_GS rating support robust gate control under high EMI; R_DS(on) drift <15 % from –40 to +150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	R_DS(on) = 0.75 Ω (higher), Q_g = 14 nC, no specified C_oss(er), 6.2 A I_D	Marginally higher conduction loss in PFC; suitable only where gate drive strength exceeds 1 A peak	Prefer SIHP690N60E-GE3 for new designs targeting <0.65 Ω R_DS(on) and <12 nC Q_g.
IXTH6N60P	R_DS(on) = 0.70 Ω, Q_g = 10 nC, C_oss(er) not published, 6.0 A I_D, TO-247 package	Lower Q_g but larger footprint; lacks avalanche rating documentation and dv/dt spec	Choose SIHP690N60E-GE3 when board space, avalanche robustness, and dv/dt immunity are design priorities.

Compared with STP6NK60ZFP and IXTH6N60P, SIHP690N60E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, verified avalanche energy rating, and documented 70 V/ns dv/dt capability-making it optimal for compact, high-reliability 600 V SMPS where thermal and switching loss trade-offs are critical.

Availability

SIHP690N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHP690N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-frequency, high-voltage switching applications-including PFC, SMPS, and motor drives-where low FOM and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHP690N60E-GE3 at 100 °C case temperature?

The SIHP690N60E-GE3 has a continuous drain current rating of 4.0 A at T_C = 100 °C, derated linearly from 6.4 A at 25 °C using a 0.5 W/°C factor. This value reflects thermal limits under typical heatsink conditions and must be validated against actual PCB layout and airflow in the final SIHP690N60E-GE3 application.

Does SIHP690N60E-GE3 have a fully characterized body diode for synchronous rectification?

Yes, the SIHP690N60E-GE3 body diode is characterized with t_rr = 146 ns (typ.), Q_rr = 1.0 μC, and V_SD = 1.2 V at I_S = 2.0 A and T_J = 25 °C. These parameters are measured per JEDEC standards and support use in DCM flyback and LLC secondary-side switching where controlled reverse recovery is required-key for minimizing EMI in SIHP690N60E-GE3-based designs.

Is SIHP690N60E-GE3 suitable for use in hard-switched 600 V PFC circuits?

Yes, SIHP690N60E-GE3 is specifically optimized for hard-switched PFC stages with its 600 V V_DS, 0.60 Ω R_DS(on), and low C_oss(er) of 17 pF. The device's 70 V/ns dv/dt rating and 9 mJ E_AS ensure robustness against voltage overshoot and inductive kickback in boost PFC-validated in reference designs using TI UCC28070 and ON Semiconductor NCP1654 controllers with SIHP690N60E-GE3.

What is the gate-source threshold voltage range for SIHP690N60E-GE3?

The SIHP690N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise coupling-critical for stable operation in noisy industrial environments where SIHP690N60E-GE3 is commonly deployed.

How does the thermal resistance of SIHP690N60E-GE3 impact heatsink selection?

The SIHP690N60E-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 2.0 °C/W. For a 6.4 A continuous drain current at 100 °C case temperature, power dissipation reaches ~2.6 W; thus, a heatsink with ≤15 °C/W junction-to-ambient resistance is sufficient to maintain T_J < 150 °C. This enables compact TO-220AB mounting in space-constrained SIHP690N60E-GE3 power modules.

SIHP690N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 347 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP690N60E-GE3 FAQ

1.How can I place an order for SIHP690N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP690N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP690N60E-GE3 reliable?

The price and inventory of SIHP690N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP690N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP690N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP690N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP690N60E-GE3?

SIHP690N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP690N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP690N60E-GE3?

For technical support, including SIHP690N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP690N60E-GE3 requirements.

6.How does Aetrix verify that SIHP690N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP690N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP690N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP690N60E-GE3?

All SIHP690N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP690N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP690N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP690N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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