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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N40D-BE3

Name: SIHP6N40D-BE3
Brand: Vishay Siliconix
SKU: SIHP6N40D-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N40D-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N40D-BE3.pdf

Description:: N-CHANNEL 400V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP6N40D-BE3 from Vishay Siliconix is a 400 V, 6 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 1.0 Ω max R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 104 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and motor drives.

For engineers reviewing the SIHP6N40D-BE3 datasheet, SIHP6N40D-BE3 pinout, SIHP6N40D-BE3 application, or SIHP6N40D-BE3 equivalent, key selection criteria include its 400 V V_DS, low 1.0 Ω on-resistance, 1.2 °C/W junction-to-case thermal resistance, and rugged body diode with 236 ns reverse recovery time.

Technical Context

This discrete power MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 400 V blocking rating and 104 mJ UIS rating support reliable operation under inductive load transients in industrial power converters.

The device uses planar silicon technology with optimized capacitance profile (C_iss = 311 pF, C_oss = 38 pF) and low figure-of-merit (R_DS(on) × Q_g ≈ 18 Ω·nC), enabling efficient 50–100 kHz switching in server PSUs and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports DC bus voltages up to 320 V in continuous operation with margin for transient spikes
R_DS(on) max	1.0 Ω at V_GS = 10 V - enables ≤3.6 W conduction loss at 6 A ID, suitable for thermally constrained PCB layouts
Q_g max	18 nC - determines gate drive power requirement and switching speed in 50–100 kHz SMPS designs
E_AS	104 mJ - ensures robustness against unclamped inductive switching events in motor control and welding circuits
R_thJC	1.2 °C/W - allows direct heatsink mounting for 104 W dissipation without exceeding 150 °C junction temperature
V_GS(th)	3–5 V - guarantees turn-on with standard 10 V gate drivers while avoiding false triggering near noise margins
trr	236 ns - defines minimum dead-time requirements when used in synchronous rectification or half-bridge configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 15.7 mm × 10.2 mm × 4.9 mm footprint, and 1.2 °C/W junction-to-case thermal path via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 3 nC Q_gs enables fast turn-on with low driver current demand
D (Drain)	High-voltage output terminal	Connected to metal tab; requires electrical isolation from heatsink unless system ground referenced
S (Source)	Power return/reference node	Common reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≈18 Ω·nC - reduces combined conduction and switching losses in medium-frequency SMPS
Avalanche-rated (UIS)	104 mJ - eliminates need for external snubbers in flyback and forward converter primary switches
Rugged body diode	236 ns t_rr, 1.2 V V_SD - supports freewheeling in non-synchronous buck or half-bridge topologies without external diode
Low C_iss/C_oss ratio	311 pF / 38 pF - improves voltage-dependent switching efficiency and reduces Miller-induced shoot-through risk

Applications

Server SMPS Primary Switch	Industrial Welding Inverter
Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end with 380–400 V DC link. IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant half-bridge primary side, operating at 100–300 kHz. Use Value: 1.0 Ω R_DS(on) and 18 nC Q_g minimize combined losses; 104 mJ E_AS withstands transformer leakage energy during fault conditions.	Use Scenario: IGBT gate-drive isolated power supply and auxiliary DC/DC in arc-welding inverters. IC Role / Device Role / Timing Role: High-voltage active clamp switch and auxiliary supply switch in 20–50 kHz inverter stages. Use Value: 400 V V_DS rating handles reflected transients; 1.2 °C/W R_thJC enables compact heatsinking in sealed enclosures.
Motor Drive Brake Circuit	Battery Charger Output Stage
Use Scenario: Dynamic braking in 3-phase BLDC drives for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Low-side dissipative brake switch activated during deceleration to short motor phases to ground. Use Value: 6 A continuous ID and 24 A pulsed ISM handle peak regenerative currents; rugged body diode absorbs back-EMF without oscillation.	Use Scenario: Isolated DC/DC stage in 48 V–600 V battery chargers for EVSE and energy storage systems. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in phase-shifted full-bridge topology. Use Value: 236 ns trr and 1.1 μC Q_rr reduce reverse recovery losses; RoHS-compliant -BE3 variant meets global environmental compliance mandates.

Server SMPS Primary Switch

Industrial Welding Inverter

Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end with 380–400 V DC link.

IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant half-bridge primary side, operating at 100–300 kHz.

Use Value: 1.0 Ω R_DS(on) and 18 nC Q_g minimize combined losses; 104 mJ E_AS withstands transformer leakage energy during fault conditions.

Use Scenario: IGBT gate-drive isolated power supply and auxiliary DC/DC in arc-welding inverters.

IC Role / Device Role / Timing Role: High-voltage active clamp switch and auxiliary supply switch in 20–50 kHz inverter stages.

Use Value: 400 V V_DS rating handles reflected transients; 1.2 °C/W R_thJC enables compact heatsinking in sealed enclosures.

Motor Drive Brake Circuit

Battery Charger Output Stage

Use Scenario: Dynamic braking in 3-phase BLDC drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side dissipative brake switch activated during deceleration to short motor phases to ground.

Use Value: 6 A continuous ID and 24 A pulsed ISM handle peak regenerative currents; rugged body diode absorbs back-EMF without oscillation.

Use Scenario: Isolated DC/DC stage in 48 V–600 V battery chargers for EVSE and energy storage systems.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in phase-shifted full-bridge topology.

Use Value: 236 ns trr and 1.1 μC Q_rr reduce reverse recovery losses; RoHS-compliant -BE3 variant meets global environmental compliance mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK40ZFP	400 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP package (full-pack)	Higher R_DS(on) and Q_g increase conduction and switching losses; lower ID rating limits peak current headroom	Acceptable where thermal margin exists and gate drive capability exceeds 22 nC demand
IXTP6N40P	400 V, 6 A, R_DS(on) = 1.1 Ω, Q_g = 16 nC, TO-220AB package, no avalanche rating	Lacks UIS specification; not validated for unclamped inductive switching; slightly lower Q_g but higher R_DS(on)	Use only in clamped topologies (e.g., ZVS/ZCS) with verified snubber design

Compared with STP6NK40ZFP and IXTP6N40P, SIHP6N40D-BE3 delivers superior avalanche ruggedness and lower conduction loss, making it preferred for unclamped inductive loads and thermally constrained 6 A applications-while maintaining identical TO-220AB mechanical fit.

Availability

SIHP6N40D-BE3 is available at Aetrix Electronics and suitable for server power supplies, industrial welding inverters, and battery charger output stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHP6N40D-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series Power MOSFET product line targets high-voltage, medium-current switching in industrial SMPS, motor drives, and welding equipment-emphasizing avalanche ruggedness, low FOM, and thermal performance in standard packages.

FAQ

What is the maximum continuous drain current rating for SIHP6N40D-BE3 at 100 °C case temperature?

The SIHP6N40D-BE3 has a maximum continuous drain current of 4 A at T_C = 100 °C, derated linearly from 6 A at 25 °C using a 0.8 W/°C factor. This rating assumes proper heatsinking and accounts for thermal resistance of 1.2 °C/W from junction to case. The SIHP6N40D-BE3 must be mounted to a heatsink capable of maintaining T_C ≤ 100 °C under full load to sustain this current.

Does SIHP6N40D-BE3 have a specified avalanche energy rating, and how is it tested?

Yes, the SIHP6N40D-BE3 is rated for 104 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, and I_AS = 9.5 A. This rating is measured per JEDEC JESD24-11 and confirms the device's ability to absorb inductive energy without failure during unclamped switching events. The SIHP6N40D-BE3 is explicitly designed and characterized for such ruggedness.

What is the gate-source threshold voltage range for SIHP6N40D-BE3, and why does it matter for drive circuit design?

The SIHP6N40D-BE3 has a V_GS(th) range of 3 V to 5 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. Designers must ensure gate drive voltage exceeds 5 V to guarantee full enhancement and avoid operation in the linear region. The SIHP6N40D-BE3's defined threshold supports predictable timing in hard-switched topologies.

Can SIHP6N40D-BE3 be used as a synchronous rectifier, and what body diode parameters support that use?

The SIHP6N40D-BE3 features an integral body diode with t_rr = 236 ns, Q_rr = 1.1 μC, and V_SD = 1.2 V at I_S = 3 A and T_J = 25 °C. While not optimized for ultra-fast synchronous rectification, these values allow acceptable performance in medium-frequency (≤100 kHz) flyback or forward converters where reverse recovery loss is manageable. The SIHP6N40D-BE3 is more commonly deployed as a primary switch than a rectifier.

Is SIHP6N40D-BE3 RoHS-compliant and halogen-free, and how is this indicated in the part number?

Yes, the "-BE3" suffix in SIHP6N40D-BE3 denotes a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. It is manufactured at an alternate qualified location and conforms to IPC/JEDEC J-STD-609 for marking. The SIHP6N40D-BE3 meets global environmental requirements without compromising electrical or thermal specifications.

SIHP6N40D-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N40D-BE3 FAQ

1.How can I place an order for SIHP6N40D-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N40D-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N40D-BE3 reliable?

The price and inventory of SIHP6N40D-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N40D-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N40D-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N40D-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N40D-BE3?

SIHP6N40D-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N40D-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N40D-BE3?

For technical support, including SIHP6N40D-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N40D-BE3 requirements.

6.How does Aetrix verify that SIHP6N40D-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N40D-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N40D-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N40D-BE3?

All SIHP6N40D-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N40D-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N40D-BE3 part is unused and in its original packaging.

Return procedure for SIHP6N40D-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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