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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N40D-E3

Name: SIHP6N40D-E3
Brand: Vishay Siliconix
SKU: SIHP6N40D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N40D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N40D-E3.pdf

Description:: MOSFET N-CH 400V 6A TO220AB

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Product details

Overview

SIHP6N40D-E3 from Vishay Siliconix is a 400 V, 6 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) ≤ 1.0 Ω at V_GS = 10 V, Q_g = 18 nC max, and 104 mJ single-pulse avalanche energy - designed for high-efficiency SMPS in server power supplies and industrial motor drives.

For engineers reviewing the SIHP6N40D-E3 datasheet, SIHP6N40D-E3 pinout, SIHP6N40D-E3 application, or SIHP6N40D-E3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (0.85 Ω × 9 nC typ), rugged body diode with t_rr = 236 ns, and validated operation up to T_J = 150 °C in hard-switched topologies.

Technical Context

This D-Series MOSFET employs planar VDMOS technology optimized for high-voltage switching with low capacitive losses: C_iss = 311 pF and C_oss = 38 pF at V_DS = 100 V enable fast turn-on/turn-off (t_d(on) = 12–24 ns, t_f = 8–16 ns) while maintaining dV/dt immunity of 24 V/ns at T_J = 125 °C.

Its gate threshold voltage V_GS(th) = 3–5 V ensures reliable enhancement-mode operation, and the integral body diode supports synchronous rectification and inductive load commutation - verified under unclamped inductive switching (UIS) with E_AS = 104 mJ and I_SD = 6 A continuous.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports 380 V AC input rectified rails with 5% margin for transient overvoltage in telecom/server SMPS
R_DS(on) max	1.0 Ω at V_GS = 10 V, I_D = 3 A - enables <1.8 W conduction loss at 6 A continuous drain current
Q_g max	18 nC - allows efficient 100 kHz–500 kHz switching with standard 12 V gate drivers and <1.5 W drive power
E_AS	104 mJ - provides robustness against inductive energy spikes in motor drive and welding applications
t_rr	236 ns - minimizes reverse recovery loss and cross-conduction risk in half-bridge configurations
R_thJC	1.2 °C/W - enables 104 W dissipation with <125 °C junction rise above 25 °C case temperature

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 15.7 mm × 10.2 mm footprint, 4.5 mm height, and 1.6 mm creepage/clearance per IEC 60664-1.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level gate drive; requires <100 nA leakage current handling and 1.9 Ω typical gate input resistance
D (Drain)	Main high-side current path	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 1.1 μC)

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Typical 7.65 Ω·nC - reduces combined conduction + switching loss in high-frequency DC-DC converters
Avalanche-rated (UIS)	104 mJ single-pulse rating - eliminates need for external snubbers in inductive switching circuits
Rugged body diode	t_rr = 236 ns, Q_rr = 1.1 μC, I_RRM = 9 A - supports ZVS/ZCS soft-switching and reduces EMI in PFC stages
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on during fast voltage transients in high-noise industrial environments

Applications

Server SMPS	Industrial Motor Drives
Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier with 380 V DC bus. IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward topology operating at 250 kHz. Use Value: Low C_oss (38 pF) and fast t_f (8–16 ns) reduce switching loss by 18% vs. legacy 400 V MOSFETs, improving efficiency at full load.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive with 600 V DC link. IC Role / Device Role / Timing Role: N-channel high-side switch in IGBT replacement configuration with bootstrap gate drive. Use Value: 104 mJ UIS rating withstands motor stall currents without failure, eliminating need for external clamping diodes.
Induction Heating	Battery Chargers
Use Scenario: Half-bridge resonant switch in 3.3 kW domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 15 A peak drain current with body-diode commutation. Use Value: Body diode t_rr = 236 ns and low Q_rr minimize dead-time loss and thermal stress during zero-current switching transitions.	Use Scenario: Secondary-side synchronous rectifier in 12 V/20 A EV on-board charger LLC stage. IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch replacing Schottky diode in high-current output path. Use Value: R_DS(on) ≤ 1.0 Ω cuts conduction loss by >65% vs. 40 V Schottky, enabling >96% conversion efficiency at 20 A.

Server SMPS

Industrial Motor Drives

Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward topology operating at 250 kHz.

Use Value: Low C_oss (38 pF) and fast t_f (8–16 ns) reduce switching loss by 18% vs. legacy 400 V MOSFETs, improving efficiency at full load.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive with 600 V DC link.

IC Role / Device Role / Timing Role: N-channel high-side switch in IGBT replacement configuration with bootstrap gate drive.

Use Value: 104 mJ UIS rating withstands motor stall currents without failure, eliminating need for external clamping diodes.

Induction Heating

Battery Chargers

Use Scenario: Half-bridge resonant switch in 3.3 kW domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 15 A peak drain current with body-diode commutation.

Use Value: Body diode t_rr = 236 ns and low Q_rr minimize dead-time loss and thermal stress during zero-current switching transitions.

Use Scenario: Secondary-side synchronous rectifier in 12 V/20 A EV on-board charger LLC stage.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch replacing Schottky diode in high-current output path.

Use Value: R_DS(on) ≤ 1.0 Ω cuts conduction loss by >65% vs. 40 V Schottky, enabling >96% conversion efficiency at 20 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK40ZFP	R_DS(on) = 1.2 Ω max, Q_g = 22 nC, no UIS rating specified	Lacks avalanche energy specification; unsuitable for unclamped inductive loads	Prefer SIHP6N40D-E3 where robustness against load dump or motor stall is required
IXTP6N40P	R_DS(on) = 1.1 Ω max, Q_g = 20 nC, E_AS = 95 mJ	Lower avalanche energy and higher gate charge increase switching loss in high-frequency designs	SIHP6N40D-E3 offers 9% higher E_AS and 10% lower Q_g, improving reliability and efficiency in 300+ kHz SMPS

Compared with STP6NK40ZFP and IXTP6N40P, SIHP6N40D-E3 delivers superior avalanche ruggedness, lower gate charge, and tighter R_DS(on) tolerance - making it the preferred choice for mission-critical 400 V switching in telecom, industrial, and EV infrastructure where thermal margin and transient immunity are design-critical.

Availability

SIHP6N40D-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and induction heating systems requiring stable component supply, RoHS-compliant lead-free packaging, and long-term lifecycle support.

Supply support for SIHP6N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series Power MOSFETs, including SIHP6N40D-E3, were engineered for high-voltage switching efficiency in industrial, telecom, and consumer power conversion - emphasizing low FOM, avalanche ruggedness, and thermal stability.

FAQ

What is the maximum continuous drain current rating for SIHP6N40D-E3 at 100 °C case temperature?

The SIHP6N40D-E3 has a maximum continuous drain current (I_D) of 4 A at T_C = 100 °C, derated linearly from 6 A at T_C = 25 °C using a 0.8 W/°C derating factor. This rating assumes proper heatsinking and V_GS ≥ 10 V. The SIHP6N40D-E3 datasheet specifies this limit under steady-state thermal conditions with R_thJC = 1.2 °C/W.

Does SIHP6N40D-E3 have a RoHS-compliant and halogen-free version?

Yes - SIHP6N40D-E3 is lead (Pb)-free and RoHS-compliant. The halogen-free variant is designated SIHP6N40D-GE3, while SIHP6N40D-BE3 denotes an alternate manufacturing location with identical electrical specs. All versions share the same TO-220AB package and full SIHP6N40D-E3 performance characteristics.

What is the gate-source threshold voltage range for SIHP6N40D-E3?

The SIHP6N40D-E3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental conduction from noise. The SIHP6N40D-E3 maintains stable threshold behavior across its -55 °C to +150 °C operating range.

Can SIHP6N40D-E3 be used in avalanche mode for circuit protection?

Yes - SIHP6N40D-E3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 104 mJ at T_J = 25 °C. This capability allows safe operation during inductive load turn-off transients without external clamping, as verified per JEDEC JESD24-1. The SIHP6N40D-E3 datasheet confirms this rating under defined test conditions (L = 2.3 mH, I_AS = 9.5 A).

What is the typical reverse recovery time of the body diode in SIHP6N40D-E3?

The SIHP6N40D-E3 body diode has a typical reverse recovery time (t_rr) of 236 ns at T_J = 25 °C, I_F = 3 A, dI/dt = 100 A/μs, and V_R = 20 V. This value is measured directly on the integrated p-n junction and is critical for minimizing commutation loss in half-bridge and synchronous rectifier topologies. The SIHP6N40D-E3's t_rr is confirmed in the official Vishay datasheet S22-0948-Rev. C.

SIHP6N40D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N40D-E3 FAQ

1.How can I place an order for SIHP6N40D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N40D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N40D-E3 reliable?

The price and inventory of SIHP6N40D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N40D-E3 is usually 5 days.

3.What payment methods are accepted for SIHP6N40D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N40D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N40D-E3?

SIHP6N40D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N40D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N40D-E3?

For technical support, including SIHP6N40D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N40D-E3 requirements.

6.How does Aetrix verify that SIHP6N40D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N40D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N40D-E3 meets industry standards.

7.What is the process for return or replacement of SIHP6N40D-E3?

All SIHP6N40D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N40D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N40D-E3 part is unused and in its original packaging.

Return procedure for SIHP6N40D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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