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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N40D-GE3

Name: SIHP6N40D-GE3
Brand: Vishay Siliconix
SKU: SIHP6N40D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N40D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N40D-GE3.pdf

Description:: MOSFET N-CH 400V 6A TO220AB

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Product details

Overview

SIHP6N40D-GE3 from Vishay Siliconix is a 400 V, 6 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 1.0 Ω max R_DS(on) at V_GS = 10 V, 18 nC max total gate charge, and 104 mJ single-pulse avalanche energy-designed for high-efficiency SMPS in server and telecom power supplies.

For engineers reviewing the SIHP6N40D-GE3 datasheet, SIHP6N40D-GE3 pinout, SIHP6N40D-GE3 application, or SIHP6N40D-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.2 °C/W), body diode recovery metrics (t_rr = 236 ns, Q_rr = 1.1 μC), and real-world switching timing (t_d(on) = 12–24 ns) critical for hard-switched PFC and LLC resonant converter design.

Technical Context

This device operates as a unidirectional high-voltage switching element with avalanche-rated ruggedness and fast intrinsic body diode recovery. Its low C_iss (311 pF typ.) and optimized C_oss/C_rss ratio support high-frequency operation up to 500 kHz in isolated DC-DC topologies.

The MOSFET exhibits positive V_DS temperature coefficient (0.53 V/°C) and normalized R_DS(on) rise of ~2.5× from 25 °C to 150 °C-enabling inherent current sharing in parallel configurations without external balancing networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports 380 V AC input rectified rails with 10 % margin for voltage transients in industrial SMPS
R_DS(on) max @ 10 V	1.0 Ω - enables ≤ 36 W conduction loss at 6 A continuous drain current in TO-220AB package
Q_g max	18 nC - determines gate drive power requirement (~1.8 mW per MHz at 10 V swing) for efficient PWM control
E_AS	104 mJ - guarantees reliable unclamped inductive switching under worst-case load dump conditions
t_rr	236 ns - limits reverse recovery cross-conduction losses during synchronous rectification or half-bridge dead-time transitions
R_thJC	1.2 °C/W - allows direct heatsink mounting to sustain 104 W dissipation at ≤ 125 °C case temperature
I_D cont @ T_C = 100 °C	4 A - defines usable current derating for forced-air-cooled enclosures operating above ambient 75 °C

Pinout & Package

TO-220AB package with standard through-hole mounting, metal tab (drain) electrically connected to pin 2, and insulated mounting hole compliant with IPC-7351B footprint IPC7351_TO220AB.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires < 1.9 Ω series gate resistor to limit dV/dt-induced turn-on during high-di/dt switching
D (Drain)	High-side power terminal	Connected to metal tab; must be isolated from heatsink unless using insulating pad-critical for floating high-side switch configurations
S (Source)	Power return reference	Serves as local ground reference for gate driver IC; layout must minimize source inductance to prevent oscillation during fast switching

Key Features

Feature	Design Value
Low figure-of-merit (R_on × Q_g)	18 Ω·nC - reduces combined conduction + switching losses in 100–300 kHz SMPS designs
Avalanche energy rated (UIS)	104 mJ - eliminates need for external snubbers in flyback or forward converter primary switches
High body diode ruggedness	Rated for repetitive ISD ≤ ID (6 A) - supports bidirectional current handling in active clamp or synchronous rectifier modes
Fast switching with low C_iss/C_oss	C_iss = 311 pF, C_oss = 38 pF - enables clean voltage transitions with minimal ringing in high-dV/dt environments
RoHS-compliant & halogen-free	SiHP6N40D-GE3 suffix confirms lead-free terminations and halogen-free molding compound per IEC 61249-2-21

Applications

Server SMPS Primary Switch	Industrial Welding Inverter
Use Scenario: High-efficiency 80 PLUS Titanium-certified 1 kW server PSU using active-clamp forward topology. IC Role / Device Role / Timing Role: Main switching transistor in primary-side power stage, operating at 250 kHz with 50 ns dead time. Use Value: 104 mJ E_AS withstands clamping voltage overshoot during active-clamp reset; 236 ns t_rr minimizes shoot-through risk during zero-voltage switching transitions.	Use Scenario: IGBT replacement in 20 kHz arc-welding inverter output stage requiring fast turn-off and high dv/dt immunity. IC Role / Device Role / Timing Role: Half-bridge high-side switch controlling welding current polarity reversal. Use Value: 24 V/ns dV/dt rating ensures stable gate bias under 1 kV/μs bus transients; 1.2 °C/W R_thJC sustains 4 A RMS current with passive heatsinking.
Plasma Display Power Supply	Battery Charger DC-DC Stage
Use Scenario: Sustaining voltage generator for plasma TV panel requiring regulated 200–400 V output with tight ripple control. IC Role / Device Role / Timing Role: Regulated buck-boost switch in constant-current LED backlight driver auxiliary supply. Use Value: 1.0 Ω R_DS(on) limits conduction loss to < 36 W at full load; low C_iss enables stable loop response with minimal phase lag.	Use Scenario: Isolated DC-DC converter in 48 V lithium-ion battery charger delivering 10 A output at 12 V. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in center-tapped forward converter. Use Value: Body diode V_SD = 1.2 V at 3 A enables low-loss freewheeling before gate turn-on; 24 A I_SM handles peak surge currents during cold-start.

Server SMPS Primary Switch

Industrial Welding Inverter

Use Scenario: High-efficiency 80 PLUS Titanium-certified 1 kW server PSU using active-clamp forward topology.

IC Role / Device Role / Timing Role: Main switching transistor in primary-side power stage, operating at 250 kHz with 50 ns dead time.

Use Value: 104 mJ E_AS withstands clamping voltage overshoot during active-clamp reset; 236 ns t_rr minimizes shoot-through risk during zero-voltage switching transitions.

Use Scenario: IGBT replacement in 20 kHz arc-welding inverter output stage requiring fast turn-off and high dv/dt immunity.

IC Role / Device Role / Timing Role: Half-bridge high-side switch controlling welding current polarity reversal.

Use Value: 24 V/ns dV/dt rating ensures stable gate bias under 1 kV/μs bus transients; 1.2 °C/W R_thJC sustains 4 A RMS current with passive heatsinking.

Plasma Display Power Supply

Battery Charger DC-DC Stage

Use Scenario: Sustaining voltage generator for plasma TV panel requiring regulated 200–400 V output with tight ripple control.

IC Role / Device Role / Timing Role: Regulated buck-boost switch in constant-current LED backlight driver auxiliary supply.

Use Value: 1.0 Ω R_DS(on) limits conduction loss to < 36 W at full load; low C_iss enables stable loop response with minimal phase lag.

Use Scenario: Isolated DC-DC converter in 48 V lithium-ion battery charger delivering 10 A output at 12 V.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in center-tapped forward converter.

Use Value: Body diode V_SD = 1.2 V at 3 A enables low-loss freewheeling before gate turn-on; 24 A I_SM handles peak surge currents during cold-start.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK40ZFP	R_DS(on) = 1.2 Ω (max), Q_g = 22 nC, no specified E_AS rating	Lacks avalanche energy specification; unsuitable for unclamped inductive loads	Acceptable only in clamped topologies with external RCD snubber
IRFP460LC	R_DS(on) = 0.27 Ω (typ), Q_g = 130 nC, V_DS = 500 V	Higher gate charge increases driver complexity; larger die area raises cost	Preferred when lower R_DS(on) outweighs gate drive overhead in high-current designs

Compared with STP6NK40ZFP and IRFP460LC, SIHP6N40D-GE3 offers balanced trade-offs: superior avalanche ruggedness versus STP6NK40ZFP and significantly lower Q_g than IRFP460LC-making it optimal for medium-power, high-reliability SMPS where driver simplicity and transient robustness are prioritized.

Availability

SIHP6N40D-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial welding inverters, and plasma display power systems requiring stable component supply across multi-year production cycles.

Supply support for SIHP6N40D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal efficiency.

The D Series Power MOSFETs-including SIHP6N40D-GE3-are engineered for high-voltage switching in demanding industrial and computing power applications, emphasizing low FOM, avalanche capability, and robust body diode performance.

FAQ

What is the maximum continuous drain current for SIHP6N40D-GE3 at 100 °C case temperature?

The SIHP6N40D-GE3 supports 4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 °C to +150 °C operating range under sustained load conditions. The SIHP6N40D-GE3 must be mounted on an appropriately sized heatsink to maintain safe operation at this current level.

Does SIHP6N40D-GE3 have a fully rated avalanche capability?

Yes, SIHP6N40D-GE3 is fully rated for unclamped inductive switching with E_AS = 104 mJ (single pulse, test condition: V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 9.5 A). This rating is guaranteed per datasheet and enables use in topologies like flyback or forward converters without external snubbers. The SIHP6N40D-GE3's avalanche ruggedness is integral to its D Series design philosophy.

What is the gate-source threshold voltage range for SIHP6N40D-GE3?

The SIHP6N40D-GE3 has a gate-source threshold voltage V_GS(th) ranging from 3 V to 5 V at T_J = 25 °C and I_D = 250 μA. This range confirms standard-level gate drive compatibility-requiring ≥ 10 V for full enhancement-and distinguishes it from logic-level variants. The SIHP6N40D-GE3 is not intended for 5 V-only gate drive systems.

Can SIHP6N40D-GE3 be used in synchronous rectification applications?

Yes, SIHP6N40D-GE3 supports synchronous rectification via its integral body diode, characterized by V_SD = 1.2 V (max) at I_S = 3 A and t_rr = 236 ns. Its 24 A pulsed diode current rating (I_SM) and 6 A continuous source-drain current (I_S) allow controlled freewheeling before gate turn-on. However, the SIHP6N40D-GE3 is not optimized for ultra-low V_SD; dedicated SR controllers should manage timing to avoid shoot-through.

What does the "-GE3" suffix indicate for SIHP6N40D-GE3?

The "-GE3" suffix on SIHP6N40D-GE3 denotes a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and IEC 61249-2-21. It specifies matte tin-plated leads and environmentally compliant molding compound-distinct from "-E3" (Pb-free only) and "-BE3" (alternate manufacturing location). The SIHP6N40D-GE3 meets Vishay's material categorization standards for green electronics.

SIHP6N40D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N40D-GE3 FAQ

1.How can I place an order for SIHP6N40D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N40D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N40D-GE3 reliable?

The price and inventory of SIHP6N40D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N40D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N40D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N40D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N40D-GE3?

SIHP6N40D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N40D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N40D-GE3?

For technical support, including SIHP6N40D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N40D-GE3 requirements.

6.How does Aetrix verify that SIHP6N40D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N40D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N40D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N40D-GE3?

All SIHP6N40D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N40D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N40D-GE3 part is unused and in its original packaging.

Return procedure for SIHP6N40D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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