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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N65E-GE3

Name: SIHP6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP6N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N65E-GE3.pdf

Description:: MOSFET N-CH 650V 7A TO220AB

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Product details

Overview

SIHP6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and 56 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHP6N65E-GE3 datasheet, SIHP6N65E-GE3 pinout, SIHP6N65E-GE3 application, or SIHP6N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low Q_g, C_iss = 820 pF, and robust UIS rating-critical for PFC stages, solar inverters, and industrial motor drives requiring reliable hard-switching performance.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with low conduction and switching losses. Its gate threshold voltage (2–4 V) ensures stable turn-on under 10 V drive, while dV/dt capability of 37 V/ns at T_J = 125 °C supports noise-immune operation in fast-switching topologies.

The integrated body diode exhibits t_rr = 237 ns and Q_rr = 2.2 μC at I_F = 3 A, enabling moderate-frequency freewheeling in bridge configurations. Thermal resistance R_thJC = 1.6 °C/W allows 78 W continuous dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 30 % margin for voltage transients in PFC and solar inverters
R_DS(on) max	0.6 Ω at V_GS = 10 V - enables <7 W conduction loss at 7 A, suitable for medium-power SMPS
Q_g max	48 nC - reduces gate drive power and enables efficient 100–300 kHz switching with standard 10 V drivers
E_AS	56 mJ - provides ruggedness against inductive switching stress without external snubbers in flyback or LLC resonant converters
C_iss	820 pF - lowers Miller effect and improves dv/dt immunity versus higher-C_iss alternatives in high-side switching
t_r/t_f	12–24 ns / 20–40 ns - supports clean edge control in hard-switched topologies with minimal overlap loss
R_thJC	1.6 °C/W - permits direct mounting to heatsink for thermal management in enclosed power modules

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and JEDEC-compliant outline for mechanical compatibility and thermal interface design.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; requires <48 nC charge for full enhancement
D	Drain	Main high-voltage current path; electrically connected to metal tab for low-inductance heatsinking
S	Source	Power return and reference node; ties to PCB ground plane; hosts body diode cathode

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	28.8 Ω·nC - minimizes combined conduction and switching loss trade-off in 100–250 kHz PFC stages
Avalanche-rated (UIS)	56 mJ single-pulse - eliminates need for external clamping in inductive load switching circuits
Low C_iss (820 pF)	Reduces gate drive current demand and improves EMI profile in high-frequency SMPS
Body diode t_rr = 237 ns	Enables controlled commutation in half-bridge and synchronous rectifier configurations up to 100 kHz
Lead (Pb)-free and Halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switching in 1–3 kW telecom/server AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and primary-side MOSFET in LLC half-bridge. Use Value: 650 V rating and 56 mJ UIS withstand capability ensure reliability during line surges and startup transients.	Use Scenario: DC-AC inversion stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC topology handling bidirectional power flow and reactive compensation. Use Value: Low Q_g and C_iss reduce gate drive losses and improve efficiency at 16–20 kHz switching frequencies.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter output stage driving 3-phase induction motors in HVAC and pump systems (0.5–2 kW). IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz variable-frequency drive output bridges. Use Value: Avalanche ruggedness and 150 °C T_J rating support sustained overload conditions without derating.	Use Scenario: High-frequency electronic ballast for T5/T8 fluorescent lamps operating at 25–65 kHz. IC Role / Device Role / Timing Role: Resonant switch in series-resonant half-bridge topology powering lamp filaments and sustaining arc. Use Value: Fast t_r/t_f and low C_oss enable precise zero-voltage switching timing control and reduced EMI generation.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switching in 1–3 kW telecom/server AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and primary-side MOSFET in LLC half-bridge.

Use Value: 650 V rating and 56 mJ UIS withstand capability ensure reliability during line surges and startup transients.

Use Scenario: DC-AC inversion stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC topology handling bidirectional power flow and reactive compensation.

Use Value: Low Q_g and C_iss reduce gate drive losses and improve efficiency at 16–20 kHz switching frequencies.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter output stage driving 3-phase induction motors in HVAC and pump systems (0.5–2 kW).

IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz variable-frequency drive output bridges.

Use Value: Avalanche ruggedness and 150 °C T_J rating support sustained overload conditions without derating.

Use Scenario: High-frequency electronic ballast for T5/T8 fluorescent lamps operating at 25–65 kHz.

IC Role / Device Role / Timing Role: Resonant switch in series-resonant half-bridge topology powering lamp filaments and sustaining arc.

Use Value: Fast t_r/t_f and low C_oss enable precise zero-voltage switching timing control and reduced EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 0.75 Ω, Q_g = 35 nC, TO-220FP package (full-pack)	Lower voltage rating limits use in 400 V+ PFC; lower Q_g favors higher-frequency operation	Prefer when board space is constrained and 600 V margin suffices; avoid in 650 V bus designs
IXTP6N65X2	650 V, 5.5 A, R_DS(on) = 0.65 Ω, Q_g = 22 nC, TO-220 package, ultra-low Q_g Gen 2 design	Lower current rating and higher R_DS(on); superior switching speed but reduced conduction headroom	Select for >300 kHz ZVS/ZCS topologies where gate drive loss dominates; verify thermal margin at 7 A

Compared with STP6NK60ZFP and IXTP6N65X2, SIHP6N65E-GE3 delivers optimal balance of 650 V rating, 7 A current capacity, and 0.6 Ω on-resistance-making it preferred for 1–2 kW PFC and industrial SMPS where both conduction efficiency and transient ruggedness are critical.

Availability

SIHP6N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SIHP6N65E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for reduced switching and conduction losses in telecom, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHP6N65E-GE3 at 100 °C case temperature?

The SIHP6N65E-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 7 A at 25 °C reflects thermal constraints of the TO-220AB package and must be validated with actual heatsink design and ambient conditions in the final application layout.

Does SIHP6N65E-GE3 have avalanche capability, and how is it rated?

Yes, SIHP6N65E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 56 mJ, tested per standard conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A). This rating confirms ruggedness against transient overvoltage events in hard-switched converters without external protection.

What is the gate threshold voltage range for SIHP6N65E-GE3, and why does it matter?

The SIHP6N65E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against false triggering. The relatively tight spread supports consistent switching behavior across temperature and unit-to-unit variation in high-volume power supply designs.

Can SIHP6N65E-GE3 be used in zero-voltage switching (ZVS) topologies?

Yes, SIHP6N65E-GE3 is suitable for ZVS applications due to its low C_oss (40 pF typ.) and controlled Q_gd/Q_gs ratio (11/6 nC), which facilitate predictable resonant turn-on timing. Its 237 ns reverse recovery time and 2.2 μC Q_rr also support clean body-diode commutation in phase-shifted full-bridge and LLC converters.

Is SIHP6N65E-GE3 lead (Pb)-free and RoHS-compliant?

Yes, SIHP6N65E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "-GE3" suffix explicitly denotes Vishay's Green, lead-free, and halogen-free construction per specification document 91543 and material categorization standard Doc. #99912.

SIHP6N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N65E-GE3 FAQ

1.How can I place an order for SIHP6N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N65E-GE3 reliable?

The price and inventory of SIHP6N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N65E-GE3?

SIHP6N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N65E-GE3?

For technical support, including SIHP6N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N65E-GE3 requirements.

6.How does Aetrix verify that SIHP6N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N65E-GE3?

All SIHP6N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP6N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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