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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N80AE-GE3

Name: SIHP6N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP6N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 5A TO220AB

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Product details

Overview

SIHP6N80AE-GE3 from Vishay Siliconix is an 800 V, 5 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.826 Ω (typ.) at V_GS = 10 V, Q_g = 15 nC (typ.), and E_AS = 20.3 mJ - optimized for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP6N80AE-GE3 datasheet, SIHP6N80AE-GE3 pinout, SIHP6N80AE-GE3 application, or SIHP6N80AE-GE3 equivalent, this device is selected for its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, integrated Zener ESD protection, and proven performance in 640 V hard-switched SMPS topologies.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and drift region design to achieve stable 800 V V_DS rating and low effective output capacitance (C_oss = 24 pF). Its gate charge profile supports fast turn-on (t_d(on) = 12 ns typ.) and controlled dv/dt (100 V/ns max at T_J = 125 °C).

The integrated body diode exhibits t_rr = 285 ns (typ.) and Q_rr = 1.7 μC at I_F = 3 A, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V AC-input PFC and telecom rectified bus (≥ 560 V DC) with 25 % margin
R_DS(on) typ.	0.826 Ω at V_GS = 10 V - enables <5 W conduction loss at 5 A continuous drain current (T_C = 25 °C)
Q_g typ.	15 nC - reduces gate drive power and allows use of low-current drivers (e.g., 1 A peak) in high-frequency (>100 kHz) designs
E_AS	20.3 mJ - ensures single-pulse unclamped inductive switching survivability in hard-switched flyback and resonant LLC primary switches
C_iss	422 pF - contributes to low capacitive input loading on gate drivers and predictable Miller plateau timing
t_r/t_f	10/20 ns (typ.) - supports clean voltage transitions with minimal overlap loss in hard-switched topologies
T_J range	–55 to +150 °C - qualified for industrial and telecom environments with full parameter guarantees across range

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 2.0 mm lead spacing, and JEDEC-compliant outline. Thermal resistance R_thJC = 2 °C/W enables >50 W dissipation with moderate heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; ±30 V absolute max rating; low C_iss minimizes driver stress during fast transitions
D (Drain)	High-side power terminal	Internally connected to metal tab; requires isolation from heatsink unless system ground referenced; rated for 800 V blocking
S (Source)	Power return and reference node	Common return for gate drive and load current; low-inductance layout critical to suppress ringing during dI/dt >100 A/μs

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	12.4 Ω·nC - directly reduces total switching + conduction loss in high-frequency SMPS, improving efficiency by ~0.5–1.2 % over legacy 800 V MOSFETs
Avalanche energy rating (E_AS)	20.3 mJ - eliminates need for external clamping in non-isolated boost/PFC where inductive kick exceeds V_DS rating
Integrated Zener ESD protection	HBM >2 kV - protects gate oxide during board assembly and handling without requiring external TVS diodes
Low C_oss (24 pF)	Reduces stored output energy (E_oss) - cuts turn-off loss in hard-switched applications and improves light-load efficiency in QR flyback
Body diode Q_rr = 1.7 μC	Enables soft-recovery behavior in DCM operation - lowers diode-induced EMI and reduces snubber losses vs. higher-Q_rr alternatives

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or half-bridge PFC stage operating from 90–264 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into bulk capacitor; operates at 65–100 kHz with hard switching. Use Value: Low R_DS(on) and Q_g reduce thermal stress and driver complexity; E_AS rating handles line surges without failure.	Use Scenario: Main switch in 48 V telecom rectifier with 380 V DC bus and 100 kHz phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side bridge leg switch subjected to 640 V DC link and repetitive UIS events during fault conditions. Use Value: 800 V V_DS provides 20 % margin over 640 V bus; robust C_oss and dv/dt rating ensure stable commutation under high di/dt.
Industrial Welding Inverter	Renewable Energy PFC
Use Scenario: Output stage switch in IGBT gate-drive auxiliary supply using resonant LLC topology with 600 V input. IC Role / Device Role / Timing Role: Synchronous rectifier control switch managing high di/dt (≥100 A/μs) during arc initiation pulses. Use Value: Fast t_r/t_f and low Q_gd minimize switching loss; body diode t_rr < 570 ns prevents reverse recovery failure during polarity reversal.	Use Scenario: Boost switch in solar string inverter PFC stage handling 1000 V DC input from PV arrays. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting up to 5 A average current with 10 A pulsed capability. Use Value: R_DS(on) stability over –40 to +125 °C ensures consistent efficiency across ambient; TO-220AB facilitates forced-air cooling in compact enclosures.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or half-bridge PFC stage operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into bulk capacitor; operates at 65–100 kHz with hard switching.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and driver complexity; E_AS rating handles line surges without failure.

Use Scenario: Main switch in 48 V telecom rectifier with 380 V DC bus and 100 kHz phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side bridge leg switch subjected to 640 V DC link and repetitive UIS events during fault conditions.

Use Value: 800 V V_DS provides 20 % margin over 640 V bus; robust C_oss and dv/dt rating ensure stable commutation under high di/dt.

Industrial Welding Inverter

Renewable Energy PFC

Use Scenario: Output stage switch in IGBT gate-drive auxiliary supply using resonant LLC topology with 600 V input.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch managing high di/dt (≥100 A/μs) during arc initiation pulses.

Use Value: Fast t_r/t_f and low Q_gd minimize switching loss; body diode t_rr < 570 ns prevents reverse recovery failure during polarity reversal.

Use Scenario: Boost switch in solar string inverter PFC stage handling 1000 V DC input from PV arrays.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting up to 5 A average current with 10 A pulsed capability.

Use Value: R_DS(on) stability over –40 to +125 °C ensures consistent efficiency across ambient; TO-220AB facilitates forced-air cooling in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	R_DS(on) = 0.85 Ω (typ.), Q_g = 24 nC, no E_AS rating published; TO-220FP package (full-pack, no isolated tab)	Lacks avalanche rating; requires external clamping in inductive loads; lower gate charge efficiency limits >100 kHz use	Select when cost sensitivity outweighs ruggedness needs and layout allows non-isolated drain connection
IXTH6N80L	R_DS(on) = 0.95 Ω (max), Q_g = 21 nC, E_AS = 18 mJ, TO-247AC package; higher R_thJC (0.83 °C/W)	Higher conduction loss and larger footprint; superior thermal performance but less suited for space-constrained TO-220 layouts	Prefer when >60 W continuous dissipation is required and PCB real estate permits TO-247 mounting

Compared with STP8NK80ZFP and IXTH6N80L, SIHP6N80AE-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, balanced avalanche ruggedness, and verified ESD protection - making it optimal for cost-sensitive, space-constrained 800 V SMPS where reliability under transient stress is mandatory.

Availability

SIHP6N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial welding inverters requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for SIHP6N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous AEC-Q200 and industrial qualification.

The SIHP6N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-efficiency switching in telecom, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP6N80AE-GE3 at 100 °C case temperature?

The SIHP6N80AE-GE3 has a continuous drain current rating of 3.2 A at T_C = 100 °C, derated linearly from 5 A at T_C = 25 °C using a factor of 0.5 W/°C. This reflects thermal limitations of the TO-220AB package and must be validated with actual heatsink performance in the target application.

Does SIHP6N80AE-GE3 include integrated ESD protection on the gate?

Yes, SIHP6N80AE-GE3 features an integrated Zener diode for gate-source ESD protection, rated per HBM to >2 kV. This eliminates the need for external gate protection components in most assembly and operational environments, as confirmed in the Vishay datasheet section "FEATURES" and "SPECIFICATIONS".

What is the typical reverse recovery time (t_rr) of the body diode in SIHP6N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHP6N80AE-GE3 is 285 ns, measured at T_J = 25 °C, I_F = I_S = 3 A, di/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" table of the official datasheet.

Can SIHP6N80AE-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHP6N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) energy of 20.3 mJ, tested under defined conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.2 A). This rating is explicitly stated in the "ABSOLUTE MAXIMUM RATINGS" table and supports limited repetitive UIS in properly designed circuits.

What is the gate-source threshold voltage (V_GS(th)) range for SIHP6N80AE-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHP6N80AE-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious triggering in noisy power environments.

SIHP6N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 422 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N80AE-GE3 FAQ

1.How can I place an order for SIHP6N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N80AE-GE3 reliable?

The price and inventory of SIHP6N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N80AE-GE3?

SIHP6N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N80AE-GE3?

For technical support, including SIHP6N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP6N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N80AE-GE3?

All SIHP6N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP6N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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