Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N80E-BE3

Name: SIHP6N80E-BE3
Brand: Vishay Siliconix
SKU: SIHP6N80E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP6N80E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N80E-BE3.pdf

Description:: N-CHANNEL 800V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP6N80E-BE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.82 Ω R_DS(on) at V_GS = 10 V, 44 nC total gate charge, and 95 mJ single-pulse avalanche energy-designed for high-voltage SMPS, PFC, and solar inverter primary-side switching.

For engineers reviewing the SIHP6N80E-BE3 datasheet, SIHP6N80E-BE3 pinout, SIHP6N80E-BE3 application, or SIHP6N80E-BE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 1.6 °C/W) in high-reliability industrial power stages.

Technical Context

This device operates as a high-voltage, medium-current unidirectional switch with integrated body diode, optimized for hard-switched topologies where conduction loss and switching loss trade-offs are critical. Its 827 pF C_iss, 37 pF C_oss, and 5 pF C_rss support fast turn-on/turn-off with controlled dv/dt (70 V/ns max at T_J = 125 °C).

The MOSFET exhibits a positive V_DS temperature coefficient (1.1 V/°C), enabling current sharing in parallel configurations, and maintains stable 2.0–4.0 V V_GS(th) across -55 to +150 °C operating range-ensuring robust gate drive margin in wide-temperature industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V DC bus designs with 2× safety margin for transient overvoltage in PFC and PV inverters
R_DS(on) typ	0.82 Ω @ V_GS = 10 V - enables ≤4.2 W conduction loss at 3.2 A RMS in continuous conduction mode PFC
Q_g max	44 nC - reduces gate driver power demand and switching transition time in 50–100 kHz SMPS
E_AS	95 mJ - withstands unclamped inductive energy during fault conditions without failure in motor drives or welders
R_thJC	1.6 °C/W - allows 78 W dissipation with ≤125 °C junction rise above 25 °C case, supporting forced-air-cooled 500 W supplies
C_iss	827 pF - limits Miller-induced shoot-through risk and eases gate drive design in half-bridge configurations
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard 12 V gate drivers while avoiding false triggering from noise

Pinout & Package

TO-220AB package with isolated drain tab, standard 3-pin through-hole mounting, and 1.6 °C/W junction-to-case thermal resistance. Drain (D) connects directly to the metal tab for efficient heatsinking; Gate (G) and Source (S) are lead-formed for PCB insertion.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives voltage-controlled signal to modulate channel conductivity; requires <44 nC charge for full enhancement
D	Drain high-side power terminal	Carries main load current; electrically connected to metal tab for direct heatsink attachment and low-inductance return path
S	Source reference and return	Serves as common reference for gate drive and current sensing; forms body diode cathode for freewheeling paths

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	36.1 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz telecom PSUs
Avalanche-rated (UIS)	95 mJ single-pulse - eliminates need for external snubbers in inductive load switching like welding inverters
Low C_iss and C_rss	827 pF / 5 pF - minimizes Miller feedback, enabling stable operation with moderate gate resistance (9.1 Ω typical)
High dv/dt immunity	70 V/ns at 125 °C - suppresses false turn-on during fast voltage transients in high-side configurations
Pb-free and halogen-free	RoHS-compliant construction - meets IPC-J-STD-609A material declarations for industrial and renewable energy deployments

Applications

Server Power Supplies	Solar PV Inverters
Use Scenario: Primary-side switching in 80+ Gold certified 1 kW server PSUs with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC to transformer primary. Use Value: 0.82 Ω R_DS(on) and 44 nC Q_g reduce combined conduction/switching losses by ~12% vs. legacy 1 Ω devices at 50 kHz.	Use Scenario: DC-link switching in string-level 3 kW photovoltaic inverters with two-level NPC architecture. IC Role / Device Role / Timing Role: High-side bridge arm switch handling 800 V DC bus with bidirectional current capability via body diode. Use Value: 95 mJ E_AS rating enables safe operation during grid fault-induced DC overvoltage events without derating.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: IGBT replacement in 3-phase 7.5 HP VFD output stage operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element in inverter leg, conducting phase current and freewheeling via body diode. Use Value: 1.2 V V_SD body diode forward drop at 3 A reduces freewheeling loss by 300 mW per cycle vs. discrete diode solutions.	Use Scenario: Resonant half-bridge switch in electronic fluorescent ballasts driving 40–60 W lamps at 40–70 kHz. IC Role / Device Role / Timing Role: Hard-switched power transistor controlling lamp ignition and steady-state regulation. Use Value: 37 pF C_oss and 282 ns trr minimize dead-time losses and acoustic noise during zero-voltage switching transitions.

Server Power Supplies

Solar PV Inverters

Use Scenario: Primary-side switching in 80+ Gold certified 1 kW server PSUs with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC to transformer primary.

Use Value: 0.82 Ω R_DS(on) and 44 nC Q_g reduce combined conduction/switching losses by ~12% vs. legacy 1 Ω devices at 50 kHz.

Use Scenario: DC-link switching in string-level 3 kW photovoltaic inverters with two-level NPC architecture.

IC Role / Device Role / Timing Role: High-side bridge arm switch handling 800 V DC bus with bidirectional current capability via body diode.

Use Value: 95 mJ E_AS rating enables safe operation during grid fault-induced DC overvoltage events without derating.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: IGBT replacement in 3-phase 7.5 HP VFD output stage operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element in inverter leg, conducting phase current and freewheeling via body diode.

Use Value: 1.2 V V_SD body diode forward drop at 3 A reduces freewheeling loss by 300 mW per cycle vs. discrete diode solutions.

Use Scenario: Resonant half-bridge switch in electronic fluorescent ballasts driving 40–60 W lamps at 40–70 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor controlling lamp ignition and steady-state regulation.

Use Value: 37 pF C_oss and 282 ns trr minimize dead-time losses and acoustic noise during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.85 Ω, Q_g = 42 nC, TO-220FP package (full-pack)	Higher ID rating but 20% higher R_thJA; suited for lower-power-density designs with limited heatsinking	Select when higher pulsed current headroom is required and case temperature remains below 95 °C
IXTH6N80L	800 V, 6.0 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-247AC package	Lower Q_g but higher R_DS(on); superior R_thJC (0.83 °C/W) enables higher continuous power in compact heatsinks	Select when gate drive power is constrained and thermal interface resistance is minimized

Compared with STP8NK80ZFP and IXTH6N80L, SIHP6N80E-BE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, making it optimal for space-constrained 500–800 W industrial supplies where both efficiency and board area matter.

Availability

SIHP6N80E-BE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing traceability.

Supply support for SIHP6N80E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHP6N80E-BE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom rectifiers, PFC circuits, and renewable energy converters where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHP6N80E-BE3 at 100 °C case temperature?

The SIHP6N80E-BE3 has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations for sustained operation. The SIHP6N80E-BE3 maintains stable R_DS(on) up to 150 °C junction temperature, supporting reliable performance in enclosed industrial enclosures.

Does SIHP6N80E-BE3 have avalanche energy rating, and how is it tested?

Yes, the SIHP6N80E-BE3 is rated for 95 mJ single-pulse avalanche energy (E_AS) under defined test conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.6 A. This rating confirms ruggedness against inductive switching transients. The SIHP6N80E-BE3 is not rated for repetitive avalanche; designers must ensure system-level protection prevents repeated stress events.

What is the gate threshold voltage range for SIHP6N80E-BE3, and why does it matter for drive circuit design?

The SIHP6N80E-BE3 has a V_GS(th) range of 2.0–4.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10–12 V gate drivers while preventing spurious conduction from noise or leakage. For robust operation, gate drive should exceed 10 V to fully enhance the channel and minimize R_DS(on)-a key requirement for the SIHP6N80E-BE3 to achieve its 0.82 Ω typical on-resistance.

How does the body diode performance of SIHP6N80E-BE3 compare to discrete diodes in flyback or LLC resonant converters?

The SIHP6N80E-BE3 features a body diode with V_SD = 1.2 V at I_S = 3 A and T_J = 25 °C, and t_rr = 282–564 ns. While slower than ultrafast discrete diodes, its integrated nature eliminates layout parasitics and simplifies bill-of-materials. In flyback snubberless designs or LLC freewheeling paths, the SIHP6N80E-BE3's body diode provides adequate recovery behavior-especially when paired with soft-switching topologies that reduce di/dt stress.

Is SIHP6N80E-BE3 suitable for use in PFC boost stages, and what thermal considerations apply?

Yes, the SIHP6N80E-BE3 is widely used in continuous conduction mode (CCM) PFC boost stages due to its 800 V V_DS, low R_DS(on), and high E_AS. At 3 A RMS current, conduction loss is ~7.4 W; combined with switching loss, total dissipation may reach 12–15 W. With R_thJC = 1.6 °C/W, a heatsink maintaining T_C ≤ 75 °C is required to hold T_J ≤ 150 °C. The SIHP6N80E-BE3's TO-220AB package supports direct mounting to aluminum extrusions or stamped heatsinks.

SIHP6N80E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N80E-BE3 FAQ

1.How can I place an order for SIHP6N80E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N80E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N80E-BE3 reliable?

The price and inventory of SIHP6N80E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N80E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N80E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N80E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N80E-BE3?

SIHP6N80E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N80E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N80E-BE3?

For technical support, including SIHP6N80E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N80E-BE3 requirements.

6.How does Aetrix verify that SIHP6N80E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N80E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N80E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N80E-BE3?

All SIHP6N80E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N80E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N80E-BE3 part is unused and in its original packaging.

Return procedure for SIHP6N80E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …