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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP6N80E-GE3

Name: SIHP6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHP6N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP6N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP6N80E-GE3.pdf

Description:: MOSFET N-CH 800V 5.4A TO220AB

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Product details

Overview

SIHP6N80E-GE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.82 Ω R_DS(on) at V_GS = 10 V, 44 nC total gate charge, and 95 mJ single-pulse avalanche energy-designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP6N80E-GE3 datasheet, SIHP6N80E-GE3 pinout, SIHP6N80E-GE3 application, or SIHP6N80E-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 1.6 °C/W) for industrial SMPS designs.

Technical Context

This device employs a planar high-voltage silicon process optimized for fast switching with low conduction loss. Its dynamic parameters-C_iss = 827 pF, C_oss = 37 pF, and Cr_ss = 5 pF at V_DS = 100 V-support efficient hard-switched topologies. Gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers.

The integral body diode exhibits t_rr = 282–564 ns and Q_rr = 2.0–4.0 μC at I_F = 3 A, enabling moderate-frequency freewheeling in bridge configurations. Avalanche rating (E_AS = 95 mJ) and dv/dt capability (70 V/ns at T_J = 125 °C) support unclamped inductive switching robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and offline SMPS up to 380 V AC input.
R_DS(on) typ	0.82 Ω @ V_GS = 10 V - enables <5.4 A continuous conduction with ≤4.4 W conduction loss at T_C = 25 °C.
Q_g max	44 nC - reduces gate drive power and enables >100 kHz operation with low-R_g drivers without excessive switching loss.
E_AS	95 mJ - withstands unclamped inductive energy during fault conditions without failure in welder or motor drive H-bridges.
R_thJC	1.6 °C/W - allows 78 W dissipation with ≤125 °C junction rise above 25 °C case, critical for thermally constrained enclosures.
t_rr	282–564 ns - limits reverse recovery current overshoot in synchronous rectification and half-bridge LLC resonant converters.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead frame, 2.54 mm lead pitch, and 1.6 mm creepage/clearance per IEC 60950-1. Mounting screw hole centered on drain tab for heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤±30 V bias; 5 nC Q_gs enables fast turn-on with minimal Miller effect.
D	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsinking and low-inductance layout.
S	Source	Power return path and gate reference; ties to PCB ground plane to minimize switching noise coupling into gate loop.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	36.1 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–150 kHz PFC boost stages.
Avalanche-rated (UIS)	95 mJ single-pulse - eliminates need for external snubbers in flyback or forward converter primary switches under overload.
Low C_iss (827 pF)	Reduces gate drive current demand and improves EMI profile in high-dV/dt environments like solar inverters.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912 for green manufacturing.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380 V DC input. IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or phase-shifted full-bridge topology. Use Value: 800 V rating and 95 mJ E_AS ensure reliability during line surges and output short-circuit events.	Use Scenario: Hold-up and backup power conversion in -48 V telecom systems with wide-input-range front-end. IC Role / Device Role / Timing Role: Main switch in high-efficiency LLC resonant converter operating at 200–500 kHz. Use Value: Low C_iss and 44 nC Q_g reduce gate drive loss and improve light-load efficiency over legacy 800 V MOSFETs.
PFC Boost Stages	Solar PV Inverters
Use Scenario: Continuous conduction mode (CCM) boost converter for universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching high-side switch with body diode used for zero-current switching (ZCS) recovery. Use Value: 282–564 ns t_rr and 2.0–4.0 μC Q_rr minimize diode reverse recovery loss and EMI generation.	Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to 400 V DC link. IC Role / Device Role / Timing Role: High-voltage isolation switch in dual-active-bridge (DAB) or full-bridge DC transformer. Use Value: R_thJC = 1.6 °C/W enables stable 5.4 A operation at 100 °C case temperature without derating.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380 V DC input.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or phase-shifted full-bridge topology.

Use Value: 800 V rating and 95 mJ E_AS ensure reliability during line surges and output short-circuit events.

Use Scenario: Hold-up and backup power conversion in -48 V telecom systems with wide-input-range front-end.

IC Role / Device Role / Timing Role: Main switch in high-efficiency LLC resonant converter operating at 200–500 kHz.

Use Value: Low C_iss and 44 nC Q_g reduce gate drive loss and improve light-load efficiency over legacy 800 V MOSFETs.

PFC Boost Stages

Solar PV Inverters

Use Scenario: Continuous conduction mode (CCM) boost converter for universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching high-side switch with body diode used for zero-current switching (ZCS) recovery.

Use Value: 282–564 ns t_rr and 2.0–4.0 μC Q_rr minimize diode reverse recovery loss and EMI generation.

Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage isolation switch in dual-active-bridge (DAB) or full-bridge DC transformer.

Use Value: R_thJC = 1.6 °C/W enables stable 5.4 A operation at 100 °C case temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW6N80K6	R_DS(on) = 0.85 Ω, Q_g = 42 nC, E_AS = 85 mJ, TO-247 package	Higher thermal resistance (R_thJC = 1.0 °C/W but larger footprint); no lead-free marking in base variant	Preferred where higher peak current (IDM = 24 A) and lower R_thJC justify TO-247 mechanical redesign.
IXTH6N80L	R_DS(on) = 0.95 Ω, Q_g = 36 nC, E_AS = 110 mJ, TO-247 package	Lower switching loss (36 nC Q_g) but higher conduction loss; avalanche rating exceeds SIHP6N80E-GE3 by 15 mJ	Selected when system-level ruggedness dominates efficiency trade-off, e.g., welding inverters with frequent short-circuits.

Compared with STW6N80K6 and IXTH6N80L, SIHP6N80E-GE3 offers the smallest footprint (TO-220AB), best R_DS(on)/Q_g balance (36.1 Ω·nC), and guaranteed lead-free/halogen-free compliance-making it optimal for space-constrained, high-volume telecom and server PSU designs.

Availability

SIHP6N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHP6N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The SIHP6N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching efficiency and ruggedness in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP6N80E-GE3 at 100 °C case temperature?

The SIHP6N80E-GE3 supports 3.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board-level thermal resistance and ambient conditions in the final design. The SIHP6N80E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHP6N80E-GE3 have avalanche capability, and how is it rated?

Yes, the SIHP6N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 95 mJ, tested per JEDEC JESD24-11. This rating applies under defined conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.6 A. The SIHP6N80E-GE3's avalanche ruggedness eliminates need for external clamping in many PFC and SMPS applications.

What is the gate threshold voltage range for SIHP6N80E-GE3, and how does it affect drive requirements?

The SIHP6N80E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding false triggering from noise. This range allows compatibility with both 5 V logic-level controllers (with margin) and 12–15 V industrial gate drivers. The SIHP6N80E-GE3 achieves full enhancement at V_GS ≥ 10 V, where R_DS(on) is guaranteed at 0.94 Ω max.

How does the body diode performance of SIHP6N80E-GE3 compare to standard FRDs in PFC applications?

The SIHP6N80E-GE3 body diode delivers t_rr = 282–564 ns and Q_rr = 2.0–4.0 μC at I_F = 3 A, which is slower and higher-Q_rr than dedicated fast recovery diodes (FRDs), but sufficient for CCM PFC operation at ≤100 kHz. Its V_SD = 1.2 V at I_S = 3 A increases conduction loss versus SiC Schottky diodes, yet the SIHP6N80E-GE3 integrates switching and freewheeling in one die-reducing BOM count and layout complexity in cost-sensitive designs.

Is SIHP6N80E-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHP6N80E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the Soldering Recommendations section. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. This makes the SIHP6N80E-GE3 suitable for modern automated assembly lines without requiring special thermal profiles beyond standard Pb-free JEDEC J-STD-020 specifications.

SIHP6N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP6N80E-GE3 FAQ

1.How can I place an order for SIHP6N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP6N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP6N80E-GE3 reliable?

The price and inventory of SIHP6N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP6N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP6N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP6N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP6N80E-GE3?

SIHP6N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP6N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP6N80E-GE3?

For technical support, including SIHP6N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP6N80E-GE3 requirements.

6.How does Aetrix verify that SIHP6N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP6N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP6N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP6N80E-GE3?

All SIHP6N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP6N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP6N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHP6N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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