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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP7N60E-BE3

Name: SIHP7N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP7N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP7N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP7N60E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP7N60E-BE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in TO-220AB package, with R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 40 nC, and E_AS = 43 mJ. It serves as a primary switching device in high-voltage DC-DC converters and PFC stages of server power supplies.

For engineers reviewing the SIHP7N60E-BE3 datasheet, SIHP7N60E-BE3 pinout, SIHP7N60E-BE3 application, or SIHP7N60E-BE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for hard-switching efficiency, thermal resistance (R_thJC = 1.6 °C/W), and TO-220AB mechanical compatibility in industrial power modules.

Technical Context

This MOSFET uses planar V-groove silicon technology optimized for high-voltage switching with controlled dV/dt (70 V/ns at T_J = 125 °C) and robust unclamped inductive switching capability. Its body diode exhibits t_rr = 230 ns and Q_rr = 1.9 μC under standardized conditions (I_F = 3.5 A, dI/dt = 100 A/μs).

The device operates with V_GS(th) = 2–4 V, enabling standard 10 V gate drive, and maintains R_DS(on) stability across -55 to +150 °C junction range. Its C_iss = 680 pF and C_oss = 39 pF support predictable turn-on/turn-off timing in fixed-frequency SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
R_DS(on) max	0.6 Ω at V_GS = 10 V - limits conduction loss to ≤2.94 W at 7 A continuous drain current
Q_g max	40 nC - enables fast switching with <26 ns turn-off delay using 9.1 Ω gate resistor
E_AS	43 mJ - sustains single-pulse inductive energy without failure in PFC choke or motor drive snubbers
R_thJC	1.6 °C/W - allows 78 W power dissipation with ≤125 °C case-to-junction rise at 25 °C ambient
I_D cont	7 A at T_C = 25 °C - defines maximum steady-state current with heatsink mounting on TO-220AB tab
t_rr	230 ns - determines minimum dead-time requirement in synchronous rectification or half-bridge configurations

Pinout & Package

TO-220AB package with isolated drain tab, standard 3-lead through-hole mounting, and 1.6 mm creepage distance per IEC 60664-1. Drain connects directly to metal tab for thermal and electrical grounding.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 680 pF shapes Miller plateau duration
D (Drain)	High-side power terminal	Connected to HV DC bus; electrically and thermally tied to metal tab; rated for 600 V blocking
S (Source)	Reference node / return path	Common connection for gate driver return and load current return; defines V_GS reference point

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	24 Ω·nC - reduces total switching + conduction loss in 100–300 kHz SMPS designs
Avalanche-rated (UIS)	43 mJ single-pulse - eliminates need for external clamping in inductive load switching
Ultra-low Q_gd/Q_g ratio	22.5 % (9/40 nC) - minimizes Miller-induced shoot-through risk in bridge configurations
Body diode soft recovery	Q_rr = 1.9 μC, I_RRM = 14 A - lowers EMI and voltage overshoot during commutation
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912

Applications

Server Power Supply PFC Stage	Solar PV Inverter DC-DC Stage
Use Scenario: Boost converter operating at 100 kHz with 400 V DC input and 12 A peak inductor current. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer into output capacitor; synchronized to PWM controller. Use Value: 0.6 Ω R_DS(on) limits conduction loss to <5 W; 43 mJ E_AS withstands line transients without derating.	Use Scenario: Isolated DC-DC stage stepping 600 V PV array voltage down to 400 V intermediate bus. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; handles 600 V DC link with 18 A pulsed current. Use Value: 70 V/ns dV/dt rating ensures reliable operation under fast voltage transitions; TO-220AB tab enables direct heatsink mounting.
Industrial Motor Drive Inverter	HID Lighting Ballast
Use Scenario: 3-phase inverter driving 2 kW induction motor with 60 Hz fundamental and 16 kHz carrier frequency. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter leg; commutates 7 A RMS phase current. Use Value: Body diode t_rr = 230 ns prevents cross-conduction; 150 °C max T_J supports sealed enclosure operation.	Use Scenario: Resonant half-bridge ballast powering 250 W metal halide lamp with 300 V DC bus. IC Role / Device Role / Timing Role: High-side switch in self-oscillating resonant topology; switches at zero-voltage crossing. Use Value: Low C_oss = 39 pF enables efficient ZVS; 600 V V_DS rating accommodates lamp ignition spikes up to 550 V.

Server Power Supply PFC Stage

Solar PV Inverter DC-DC Stage

Use Scenario: Boost converter operating at 100 kHz with 400 V DC input and 12 A peak inductor current.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer into output capacitor; synchronized to PWM controller.

Use Value: 0.6 Ω R_DS(on) limits conduction loss to <5 W; 43 mJ E_AS withstands line transients without derating.

Use Scenario: Isolated DC-DC stage stepping 600 V PV array voltage down to 400 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; handles 600 V DC link with 18 A pulsed current.

Use Value: 70 V/ns dV/dt rating ensures reliable operation under fast voltage transitions; TO-220AB tab enables direct heatsink mounting.

Industrial Motor Drive Inverter

HID Lighting Ballast

Use Scenario: 3-phase inverter driving 2 kW induction motor with 60 Hz fundamental and 16 kHz carrier frequency.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter leg; commutates 7 A RMS phase current.

Use Value: Body diode t_rr = 230 ns prevents cross-conduction; 150 °C max T_J supports sealed enclosure operation.

Use Scenario: Resonant half-bridge ballast powering 250 W metal halide lamp with 300 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in self-oscillating resonant topology; switches at zero-voltage crossing.

Use Value: Low C_oss = 39 pF enables efficient ZVS; 600 V V_DS rating accommodates lamp ignition spikes up to 550 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	R_DS(on) = 0.75 Ω, Q_g = 32 nC, E_AS = 30 mJ, TO-220FP package (shorter leads, no isolated tab)	Limited to lower-power PFC or lighting due to higher R_DS(on) and lower avalanche energy	Prefer when space-constrained PCB layout favors TO-220FP and avalanche stress is minimal
IXTH7N60L2	R_DS(on) = 0.65 Ω, Q_g = 27 nC, E_AS = 50 mJ, TO-247AC package (higher thermal performance)	Better suited for >1 kW industrial inverters requiring >100 W dissipation and enhanced ruggedness	Choose when R_thJC < 1.0 °C/W and >50 mJ E_AS are mandatory; requires larger footprint

Compared with STP7NK60ZFP and IXTH7N60L2, SIHP7N60E-BE3 delivers optimal balance of low gate charge, proven 43 mJ avalanche capability, and TO-220AB mechanical compatibility-making it ideal for cost-sensitive 500–1000 W server and telecom power supplies where layout reuse and thermal management simplicity are critical.

Availability

SIHP7N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHP7N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHP7N60E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in telecom, server, and renewable energy systems where ruggedness and consistent parametric performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHP7N60E-BE3 at 100 °C case temperature?

The SIHP7N60E-BE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP7N60E-BE3 must be mounted on an appropriately sized heatsink to maintain this rating under sustained load.

Does SIHP7N60E-BE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP7N60E-BE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 43 mJ. The test condition is V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, and I_AS = 2.5 A. This rating applies to single-pulse events and confirms the device's ability to absorb inductive energy without failure-critical for PFC and motor drive applications where stray inductance is present.

What is the gate threshold voltage range for SIHP7N60E-BE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHP7N60E-BE3 is 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHP7N60E-BE3 is not a logic-level MOSFET; it requires ≥8 V V_GS for full enhancement, and its 0.6 Ω R_DS(on) is guaranteed only at V_GS = 10 V.

How does the body diode performance of SIHP7N60E-BE3 compare to standard FRDs in high-frequency applications?

The SIHP7N60E-BE3 body diode has t_rr = 230 ns and Q_rr = 1.9 μC at T_J = 25 °C, I_F = 3.5 A, and dI/dt = 100 A/μs. While slower than dedicated fast recovery diodes, its soft recovery characteristic reduces EMI and voltage overshoot-making it suitable for quasi-resonant or ZVS circuits where moderate reverse recovery is acceptable. For hard-switched synchronous rectification, an external Schottky may still be preferred.

Is SIHP7N60E-BE3 compatible with lead-free reflow soldering processes?

Yes, SIHP7N60E-BE3 is lead (Pb)-free and halogen-free, qualified for lead-free soldering with peak temperature up to 300 °C for 10 seconds. Its TO-220AB package meets J-STD-020 moisture sensitivity level (MSL) requirements for standard surface-mount assembly, though through-hole mounting is typical. The SIHP7N60E-BE3 complies with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912.

SIHP7N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP7N60E-BE3 FAQ

1.How can I place an order for SIHP7N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP7N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP7N60E-BE3 reliable?

The price and inventory of SIHP7N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP7N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP7N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP7N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP7N60E-BE3?

SIHP7N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP7N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP7N60E-BE3?

For technical support, including SIHP7N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP7N60E-BE3 requirements.

6.How does Aetrix verify that SIHP7N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP7N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP7N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP7N60E-BE3?

All SIHP7N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP7N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP7N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP7N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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