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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP7N60E-E3

Name: SIHP7N60E-E3
Brand: Vishay Siliconix
SKU: SIHP7N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP7N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP7N60E-E3.pdf

Description:: MOSFET N-CH 600V 7A TO220AB

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Product details

Overview

SIHP7N60E-E3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 40 nC total gate charge, and 43 mJ single-pulse avalanche energy-designed for high-efficiency switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP7N60E-E3 datasheet, SIHP7N60E-E3 pinout, SIHP7N60E-E3 application, or SIHP7N60E-E3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 1.6 °C/W), body diode recovery characteristics (t_rr = 230 ns), and real-world design implications for SMPS and solar inverter topologies.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched 600 V applications. Its low Q_g/Q_gd ratio (40 nC / 9 nC) and C_iss = 680 pF support fast turn-on with controlled dV/dt (70 V/ns at T_J = 125 °C), reducing EMI in high-frequency converters.

The integrated body diode is rated for 7 A continuous source-drain current and exhibits 1.2 V forward voltage at 3.5 A and 25 °C. Its 1.9 μC reverse recovery charge and 14 A peak reverse recovery current are specified under standardized 100 A/μs dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and PV inverters
R_DS(on) max	0.6 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 3.5 A, critical for thermally constrained server PSUs
Q_g max	40 nC - determines gate drive power requirement; requires ≥1 W driver capability at 100 kHz switching
E_AS	43 mJ - ensures robustness against unclamped inductive switching events in motor drives and welding equipment
t_rr	230 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge configurations
R_thJC	1.6 °C/W - allows 78 W dissipation with ≤125 °C junction rise above case, enabling heatsink-free operation below 5 W
I_D cont	7 A at T_C = 25 °C - sets maximum continuous output current in TO-220AB without derating

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Tab is electrically connected to drain terminal and must be insulated from heatsink unless system ground reference permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 5 nC Q_gs enables fast turn-on with minimal Miller effect
D (Drain)	High-side power switch node	Connected to TO-220AB metal tab; requires isolation washer if heatsink is grounded
S (Source)	Power return and reference node	Common return for gate drive and load current; establishes local ground for bootstrap circuits

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	24 Ω·nC - reduces combined conduction + switching losses in 65–100 kHz SMPS designs
Avalanche-rated (UIS)	43 mJ single-pulse rating - eliminates need for external snubbers in flyback and resonant converters
Low C_iss (680 pF)	Minimizes capacitive loading on gate driver, enabling use of cost-effective 1-A drivers
Body diode t_rr = 230 ns	Supports ZVS operation in LLC resonant converters when paired with appropriate timing control
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium AC-DC front-end modules. IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC half-bridge topology. Use Value: 0.6 Ω R_DS(on) and 40 nC Q_g enable >96 % efficiency at full load while maintaining TJ < 125 °C with forced air cooling.	Use Scenario: Hold-up and boost stage in -48 V telecom rectifier systems with 380 V DC bus. IC Role / Device Role / Timing Role: PFC switch handling 3–5 A RMS current at 65–135 kHz switching frequency. Use Value: 43 mJ E_AS withstands line surges and capacitor discharge transients without failure during brownout recovery.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg. Use Value: 70 V/ns dV/dt rating ensures reliable operation under fast voltage transitions in SiC-based hybrid inverters.	Use Scenario: Inverter output stage in 0.75–2.2 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge with freewheeling function. Use Value: 1.2 V V_SD and 230 ns t_rr minimize body diode conduction losses during PWM dead-time intervals.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium AC-DC front-end modules.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC half-bridge topology.

Use Value: 0.6 Ω R_DS(on) and 40 nC Q_g enable >96 % efficiency at full load while maintaining TJ < 125 °C with forced air cooling.

Use Scenario: Hold-up and boost stage in -48 V telecom rectifier systems with 380 V DC bus.

IC Role / Device Role / Timing Role: PFC switch handling 3–5 A RMS current at 65–135 kHz switching frequency.

Use Value: 43 mJ E_AS withstands line surges and capacitor discharge transients without failure during brownout recovery.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg.

Use Value: 70 V/ns dV/dt rating ensures reliable operation under fast voltage transitions in SiC-based hybrid inverters.

Use Scenario: Inverter output stage in 0.75–2.2 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge with freewheeling function.

Use Value: 1.2 V V_SD and 230 ns t_rr minimize body diode conduction losses during PWM dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	R_DS(on) = 0.75 Ω, Q_g = 32 nC, E_AS = 30 mJ, TO-220FP package (full-pack)	Lower peak current rating (IDM = 15 A vs. 18 A); reduced avalanche ruggedness	Preferable where lower gate charge reduces driver complexity but thermal margin is less constrained
IPP60R099CP	650 V, R_DS(on) = 0.099 Ω, Q_g = 62 nC, Superjunction, TO-220	Higher conduction efficiency but greater switching loss and cost; requires stronger gate drive	Select when <0.1 Ω R_DS(on) is mandatory for >5 kW systems and layout accommodates higher EMI filtering

Compared with STP7NK60ZFP and IPP60R099CP, the SIHP7N60E-E3 delivers balanced trade-offs: superior avalanche ruggedness versus ST's part and lower gate drive demand versus Infineon's superjunction device-making it optimal for mid-power industrial SMPS where reliability and drive simplicity are prioritized.

Availability

SIHP7N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP7N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP7N60E-E3 belongs to Vishay's E Series Power MOSFET product line, engineered for high-efficiency, high-ruggedness switching in industrial and communications power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP7N60E-E3 at 100 °C case temperature?

The SIHP7N60E-E3 supports 5 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating from the 7 A rating at 25 °C reflects thermal limitations of the TO-220AB package. Designers must verify junction temperature using R_thJC = 1.6 °C/W and actual power dissipation to ensure safe operation within the -55 °C to +150 °C junction range.

Does SIHP7N60E-E3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP7N60E-E3 is fully rated for unclamped inductive switching (UIS) with E_AS = 43 mJ at T_J = 25 °C. Testing follows JEDEC standard JESD24-11 using L = 13.8 mH, R_g = 25 Ω, V_DD = 50 V, and I_AS = 2.5 A. This rating confirms robustness against transient energy during hard commutation in motor drives and welders without external protection.

What is the typical gate threshold voltage range for SIHP7N60E-E3, and why does it matter for drive circuit design?

The SIHP7N60E-E3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA. This wide threshold ensures consistent turn-on across process variation but requires gate drive voltages ≥10 V to guarantee full enhancement and low R_DS(on). Using marginal drive (e.g., 6–8 V) risks incomplete turn-on and excessive conduction loss, especially at elevated temperatures.

How does the body diode performance of SIHP7N60E-E3 compare to standard FRDs in PFC applications?

The SIHP7N60E-E3 body diode has V_SD = 1.2 V and t_rr = 230 ns at 3.5 A, making it suitable for synchronous rectification or freewheeling-but not a replacement for dedicated fast recovery diodes in high-frequency PFC boost diodes. Its Q_rr = 1.9 μC is higher than optimized FRDs, so it should only be used in diode-mode roles where its integrated nature simplifies layout, not where ultra-low recovery loss is critical.

Is SIHP7N60E-E3 compatible with lead-free reflow soldering processes?

Yes, SIHP7N60E-E3 is qualified for lead-free reflow with a peak temperature of 300 °C for 10 seconds, per its Soldering Recommendations. The "-E3" suffix explicitly denotes lead (Pb)-free construction compliant with RoHS Directive 2011/65/EU. No special preheat or cooling profiles beyond standard Pb-free JEDEC J-STD-020 are required.

SIHP7N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP7N60E-E3 FAQ

1.How can I place an order for SIHP7N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP7N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP7N60E-E3 reliable?

The price and inventory of SIHP7N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP7N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP7N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP7N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP7N60E-E3?

SIHP7N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP7N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP7N60E-E3?

For technical support, including SIHP7N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP7N60E-E3 requirements.

6.How does Aetrix verify that SIHP7N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP7N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP7N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP7N60E-E3?

All SIHP7N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP7N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP7N60E-E3 part is unused and in its original packaging.

Return procedure for SIHP7N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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