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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP7N60E-GE3

Name: SIHP7N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP7N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP7N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP7N60E-GE3.pdf

Description:: MOSFET N-CH 600V 7A TO220AB

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Product details

Overview

SIHP7N60E-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 40 nC total gate charge, and 43 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP7N60E-GE3 datasheet, SIHP7N60E-GE3 pinout, SIHP7N60E-GE3 application, or SIHP7N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low Q_g, and robust UIS rating for reliable operation in hard-switched industrial and telecom power converters.

Technical Context

This device employs planar VDMOS technology with optimized cell layout to achieve low conduction and switching losses simultaneously. Its 680 pF input capacitance (C_iss) and 39 pF output capacitance (C_oss) support fast switching at high bus voltages up to 480 V DC.

The integral body diode exhibits 1.2 V forward voltage at 3.5 A and 230 ns reverse recovery time, enabling use in synchronous rectification and freewheeling paths where controlled diode recovery is critical. Thermal resistance R_thJC is 1.6 °C/W, supporting 78 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage in telecom/PFC designs
R_DS(on) max @ 10 V	0.6 Ω - enables <1.5 W conduction loss at 7 A, reducing heatsink requirements in compact SMPS
Q_g max	40 nC - lowers driver power demand and gate drive loop energy loss in high-frequency (>100 kHz) operation
E_AS	43 mJ - ensures ruggedness against inductive switching stress without external snubbers in motor drives or welders
C_iss	680 pF - minimizes Miller effect and improves turn-on controllability under high dV/dt conditions
T_J range	–55 to +150 °C - qualified for industrial ambient environments including solar inverters and battery chargers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.6 mm creepage/clearance per IEC 60664-1, rated for 78 W at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 5 nC Q_gs enables fast turn-on with minimal overshoot
D (Drain)	High-side power terminal	Internally connected to metal tab; requires insulated mounting when heatsink is grounded
S (Source)	Power return and reference	Serves as local ground for gate drive; 9 nC Q_gd defines Miller plateau duration during switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	24 Ω·nC - directly reduces combined conduction + switching loss in 65–300 kHz PFC and LLC topologies
Avalanche-rated (UIS)	43 mJ single-pulse - eliminates need for external clamping in flyback or resonant converter primary switches
Ultra-low Q_g	20 nC typical - cuts gate driver IC power consumption by >30% vs. legacy 600 V MOSFETs
Low C_iss and C_oss	680 pF / 39 pF - improves EMI profile and reduces capacitive coupling in high-density power modules

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 800–1200 W at 94% efficiency. IC Role / Device Role / Timing Role: High-voltage power switch handling 400–600 V DC bus with 100–300 kHz switching frequency. Use Value: 0.6 Ω R_DS(on) and 40 nC Q_g reduce thermal load and enable smaller heatsinks in 1U server PSUs.	Use Scenario: DC-link switch in string-level PV inverter MPPT stage operating at 1000 V DC system voltage. IC Role / Device Role / Timing Role: Fast-switching unidirectional power switch in boost converter front-end with 50–150 kHz PWM. Use Value: 43 mJ E_AS withstands lightning-induced transients on solar arrays without derating.
Industrial Welder	Fluorescent Ballast
Use Scenario: Inverter bridge switch in IGBT-assisted arc welding power supply with 20–50 kHz carrier frequency. IC Role / Device Role / Timing Role: High-current (7 A continuous, 18 A pulsed) switching element in half-bridge topology. Use Value: 1.6 °C/W R_thJC allows direct heatsink mounting for sustained 78 W dissipation during duty-cycle bursts.	Use Scenario: Resonant switch in electronic fluorescent lamp ballast driving 30–60 W lamps at 25–60 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) power transistor with low C_oss enabling soft turn-on. Use Value: 39 pF C_oss and 230 ns trr minimize dead-time losses and audible noise in lamp ignition.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 800–1200 W at 94% efficiency.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400–600 V DC bus with 100–300 kHz switching frequency.

Use Value: 0.6 Ω R_DS(on) and 40 nC Q_g reduce thermal load and enable smaller heatsinks in 1U server PSUs.

Use Scenario: DC-link switch in string-level PV inverter MPPT stage operating at 1000 V DC system voltage.

IC Role / Device Role / Timing Role: Fast-switching unidirectional power switch in boost converter front-end with 50–150 kHz PWM.

Use Value: 43 mJ E_AS withstands lightning-induced transients on solar arrays without derating.

Industrial Welder

Fluorescent Ballast

Use Scenario: Inverter bridge switch in IGBT-assisted arc welding power supply with 20–50 kHz carrier frequency.

IC Role / Device Role / Timing Role: High-current (7 A continuous, 18 A pulsed) switching element in half-bridge topology.

Use Value: 1.6 °C/W R_thJC allows direct heatsink mounting for sustained 78 W dissipation during duty-cycle bursts.

Use Scenario: Resonant switch in electronic fluorescent lamp ballast driving 30–60 W lamps at 25–60 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) power transistor with low C_oss enabling soft turn-on.

Use Value: 39 pF C_oss and 230 ns trr minimize dead-time losses and audible noise in lamp ignition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 6.5 A, R_DS(on) = 0.7 Ω, Q_g = 42 nC, TO-220FP package (full-pack)	Higher R_DS(on) and same Q_g; lower power dissipation rating (30 W)	Preferred where space-constrained PCB layout favors full-pack insulation but thermal budget permits higher on-resistance
IXTH7N60L2	600 V, 7 A, R_DS(on) = 0.65 Ω, Q_g = 36 nC, TO-247AC package	Lower Q_g but larger footprint; no avalanche rating (E_AS not specified)	Selected when gate drive efficiency is prioritized over ruggedness and board area is available for TO-247

Compared with STP7NK60ZFP and IXTH7N60L2, SIHP7N60E-GE3 delivers superior FOM (24 Ω·nC), certified UIS capability, and TO-220AB's balance of thermal performance and mounting simplicity - making it optimal for cost-sensitive, thermally constrained 600 V power stages.

Availability

SIHP7N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, photovoltaic inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.

Supply support for SIHP7N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in industrial, telecom, and renewable energy systems - emphasizing low FOM, avalanche ruggedness, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current for SIHP7N60E-GE3 at 100 °C case temperature?

The SIHP7N60E-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 7 A at 25 °C reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The linear derating factor is 0.63 W/°C above 25 °C case temperature.

Does SIHP7N60E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHP7N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 43 mJ. Per the datasheet, this is measured under conditions of V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, and I_AS = 2.5 A. The rating applies to repetitive pulses limited only by junction temperature.

What is the gate threshold voltage range for SIHP7N60E-GE3, and how does it affect drive requirements?

The SIHP7N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at T_J = 25 °C and I_D = 250 μA. This confirms standard-level (not logic-level) drive compatibility, requiring ≥10 V gate drive for full R_DS(on) specification. Gate drive circuits must ensure V_GS exceeds 4 V reliably to avoid linear-mode operation and thermal runaway.

How does the body diode performance of SIHP7N60E-GE3 compare to standard FRDs in PFC applications?

The SIHP7N60E-GE3 body diode has V_SD = 1.2 V at 3.5 A and t_rr = 230 ns, which is slower and higher-loss than dedicated fast recovery diodes (FRDs). However, its Q_rr = 1.9 μC and I_RRM = 14 A are sufficient for discontinuous conduction mode (DCM) PFC where diode conduction is brief. It is not recommended for continuous conduction mode (CCM) PFC without careful thermal analysis.

Is SIHP7N60E-GE3 halogen-free and RoHS-compliant?

Yes, SIHP7N60E-GE3 is both lead (Pb)-free and halogen-free, as indicated by the "-GE3" suffix in the ordering code. It complies with Vishay's material categorization per document 99912 and meets RoHS Directive 2011/65/EU requirements. The device uses matte tin plating on leads and green molding compound.

SIHP7N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP7N60E-GE3 FAQ

1.How can I place an order for SIHP7N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP7N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP7N60E-GE3 reliable?

The price and inventory of SIHP7N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP7N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP7N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP7N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP7N60E-GE3?

SIHP7N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP7N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP7N60E-GE3?

For technical support, including SIHP7N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP7N60E-GE3 requirements.

6.How does Aetrix verify that SIHP7N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP7N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP7N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP7N60E-GE3?

All SIHP7N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP7N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP7N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP7N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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