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Vishay Siliconix SIHP8N50D-E3
- Part No.:
- SIHP8N50D-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP8N50D-E3.pdf
- Description:
- MOSFET N-CH 500V 8.7A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
SIHP8N50D-E3 from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 500 V drain-source voltage, 8.7 A continuous drain current at TC = 25 °C, and 0.85 Ω maximum RDS(on) at VGS = 10 V. It delivers fast switching (td(on) ≤ 26 ns), low gate charge (Qg ≤ 30 nC), and avalanche energy rating (EAS = 29 mJ), making it suitable for high-efficiency SMPS in server and telecom power supplies.
For engineers reviewing the SIHP8N50D-E3 datasheet, SIHP8N50D-E3 pinout, SIHP8N50D-E3 application, or SIHP8N50D-E3 equivalent, key selection criteria include its 500 V blocking capability, 0.85 Ω on-resistance at 10 V gate drive, 30 nC total gate charge, body diode recovery time (trr = 308 ns), and TO-220AB thermal performance (RthJC = 0.8 °C/W).
Technical Context
This MOSFET operates as a unidirectional high-voltage switch with integrated robust body diode, optimized for hard-switched and resonant topologies. Its low Ciss (527 pF) and Crss (8 pF) reduce capacitive losses, while the 0.70 Ω typical RDS(on) at 4 A enables efficient conduction in mid-power DC-DC converters and auxiliary power stages.
The device features a positive VDS temperature coefficient (0.58 V/°C), enabling inherent current sharing in parallel configurations. Its 29 mJ single-pulse avalanche rating and 24 V/ns dV/dt capability support reliable operation under transient overvoltage and inductive load switching conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports primary-side switching in offline 400 V AC-input SMPS |
| RDS(on) max | 0.85 Ω @ VGS = 10 V - ensures <1.4 W conduction loss at 4 A, simplifying heatsink requirements |
| Qg max | 30 nC - enables efficient 100–500 kHz switching with standard gate drivers |
| EAS | 29 mJ - withstands unclamped inductive energy during fault or startup without failure |
| trr | 308 ns - limits reverse recovery losses in flyback and LLC secondary-side rectification |
| RthJC | 0.8 °C/W - allows >100 W dissipation with moderate heatsinking in TO-220AB |
| ID cont | 8.7 A @ TC = 25 °C - supports 100–200 W isolated power stages with margin |
Pinout & Package
Package: TO-220AB, through-hole, single-channel N-channel MOSFET with drain-connected tab for direct heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level signal to fully enhance channel; 3–5 V threshold enables compatibility with standard PWM controllers |
| D (Drain) | High-side switched output | Connected to high-voltage rail (up to 500 V); tab is electrically tied to drain for thermal and electrical integration |
| S (Source) | Power return / reference node | Serves as common source for gate drive and current sensing; forms return path for ID and ISD |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 25.5 Ω·nC - improves trade-off between conduction and switching loss in 100–300 kHz designs |
| Avalanche-rated (UIS) | 29 mJ single-pulse - eliminates need for external snubbers in inductive load switching |
| High body diode ruggedness | ISM = 32 A pulsed - sustains high-recovery-current stress during ZVS/ZCS transitions |
| Fast switching speed | td(off) ≤ 34 ns - reduces dead-time losses in synchronous rectification and half-bridge topologies |
| Low Crss (feedback capacitance) | 8 pF - minimizes Miller effect, improving gate drive stability under high dV/dt |
Applications
| Server Power Supply | Industrial Motor Drive |
|---|---|
Use Scenario: Primary-side switch in 500 W active-clamp forward converter for rack-mounted servers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from bulk DC to transformer primary. Use Value: 500 V rating accommodates 400 V DC bus with margin; 0.85 Ω RDS(on) keeps conduction loss below 1.5 W at full load. | Use Scenario: Inverter leg switch in 1 kW BLDC motor drive for HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching transistor in three-phase bridge, commutating motor phase current. Use Value: 308 ns trr and 11 A IRRM ensure clean turn-off during high-dI/dt commutation; TO-220AB mounting enables direct heatsink attachment. |
| Plasma Display Power | Battery Charger |
Use Scenario: Sustaining switch in plasma display panel (PDP) X/Y sustain circuit operating at 200–300 kHz. IC Role / Device Role / Timing Role: High-frequency, high-voltage switch generating sustain pulses across plasma cells. Use Value: 24 V/ns dV/dt rating prevents false triggering during rapid voltage transitions; low Ciss reduces driver power demand. | Use Scenario: Primary switch in 120 W universal-input offline charger for industrial handheld tools. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback topology delivering regulated 19 V output. Use Value: 29 mJ EAS handles leakage inductance spikes without clamping; 30 nC Qg enables efficient QR control down to 40 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V, 8 A, RDS(on) = 0.85 Ω, Qg = 32 nC, TO-220FP (full-pack) | Same voltage/current rating but lower creepage/clearance due to insulated package; slightly higher Qg | Preferred where reinforced isolation or PCB-mount safety spacing is required; not drop-in due to different footprint |
| IXTH8N50L | 500 V, 8 A, RDS(on) = 0.85 Ω, Qg = 27 nC, TO-247AC | Superior thermal resistance (RthJC = 0.45 °C/W), higher peak current (IDM = 32 A), larger package | Selected when >150 W continuous dissipation or enhanced avalanche margin is needed; requires PCB layout change |
Compared with STP8NK50ZFP and IXTH8N50L, the SIHP8N50D-E3 offers optimal balance of cost, TO-220AB thermal interface, and proven reliability in volume telecom SMPS-making it ideal for cost-sensitive, medium-power applications where board space and heatsink integration are constrained.
Availability
SIHP8N50D-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and plasma display sustain circuits requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHP8N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The D Series Power MOSFETs-including SIHP8N50D-E3-are engineered for high-voltage switching in offline power conversion, emphasizing low RDS(on) × Qg figure-of-merit, rugged avalanche capability, and robust body diode performance.
FAQ
What is the maximum junction temperature rating for SIHP8N50D-E3?
The SIHP8N50D-E3 has a maximum operating junction temperature of +150 °C, as specified in its absolute maximum ratings. This rating enables reliable operation in high-ambient environments such as enclosed server PSUs or industrial enclosures. Derating curves confirm usable current capacity down to 5.5 A at TC = 100 °C. The device's thermal resistance from junction to case (RthJC = 0.8 °C/W) supports effective heatsinking to maintain SIHP8N50D-E3 within safe thermal limits under sustained load.
Does SIHP8N50D-E3 support logic-level gate drive?
No, SIHP8N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3 V to 5 V, but it requires 10 V gate drive to achieve its specified RDS(on) of 0.85 Ω. Driving SIHP8N50D-E3 with only 5 V results in significantly higher on-resistance (>2 Ω), excessive conduction loss, and potential thermal runaway. Standard PWM controllers with 10–15 V gate drive outputs-such as UC384x or UCC28xx families-are recommended for proper enhancement of SIHP8N50D-E3.
What is the body diode reverse recovery charge (Qrr) of SIHP8N50D-E3?
The SIHP8N50D-E3 has a typical reverse recovery charge (Qrr) of 1.8 μC, measured at TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, and VR = 20 V. This value directly impacts switching loss during commutation in synchronous rectifier or half-bridge configurations. Combined with its 308 ns trr and 11 A IRRM, this Qrr confirms SIHP8N50D-E3's suitability for moderate-frequency hard-switched topologies where body diode conduction occurs, such as flyback snubber networks or PFC boost freewheeling paths.
Can SIHP8N50D-E3 be used in parallel configurations?
Yes, SIHP8N50D-E3 can be paralleled due to its positive VDS temperature coefficient (0.58 V/°C), which promotes natural current sharing as junction temperature rises. However, successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to dampen oscillation. The SIHP8N50D-E3's low Crss (8 pF) also reduces cross-talk risk. For high-reliability parallel use, derate total current by ≥20% and verify thermal coupling-especially since SIHP8N50D-E3's TO-220AB tab is drain-connected and must be isolated if multiple devices share a heatsink.
Is SIHP8N50D-E3 halogen-free and RoHS-compliant?
SIHP8N50D-E3 is lead (Pb)-free per JEDEC J-STD-609, and its "E3" suffix denotes compliance with Vishay's lead-free standard. While the datasheet confirms Pb-free construction and references Vishay's material categorization document (doc?99912), it does not explicitly state halogen-free status. The halogen-free variant is designated SIHP8N50D-GE3. Therefore, SIHP8N50D-E3 meets RoHS requirements but should be verified against specific halogen content thresholds (e.g., IEC 61249-2-21) if mandated by end-equipment standards.
SIHP8N50D-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 527 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP8N50D-E3 FAQ
1.How can I place an order for SIHP8N50D-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP8N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP8N50D-E3 reliable?
The price and inventory of SIHP8N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP8N50D-E3 is usually 5 days.
3.What payment methods are accepted for SIHP8N50D-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP8N50D-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP8N50D-E3?
SIHP8N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP8N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP8N50D-E3?
For technical support, including SIHP8N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP8N50D-E3 requirements.
6.How does Aetrix verify that SIHP8N50D-E3 is sourced from the original manufacturer or authorized distributors?
All SIHP8N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP8N50D-E3 meets industry standards.
7.What is the process for return or replacement of SIHP8N50D-E3?
All SIHP8N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP8N50D-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP8N50D-E3 part is unused and in its original packaging.
Return procedure for SIHP8N50D-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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