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Vishay Siliconix SIHP8N50D-GE3
- Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP8N50D-GE3.pdf
- Description:
- MOSFET N-CH 500V 8.7A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:60
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Product details
Overview
SIHP8N50D-GE3 from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 500 V drain-source voltage, 8.7 A continuous drain current at TC = 25 °C, and 0.85 Ω max RDS(on) at VGS = 10 V. It delivers fast switching (td(on) ≤ 26 ns), low gate charge (Qg ≤ 30 nC), and avalanche energy rating (EAS = 29 mJ), making it suitable for high-efficiency SMPS in server power supplies.
For engineers reviewing the SIHP8N50D-GE3 datasheet, SIHP8N50D-GE3 pinout, SIHP8N50D-GE3 application, or SIHP8N50D-GE3 equivalent, key selection criteria include its 500 V blocking capability, 0.85 Ω on-resistance at 10 V gate drive, TO-220AB thermal performance (RthJC = 0.8 °C/W), body diode ruggedness, and suitability for hard-switched industrial DC-DC converters.
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage switching with low figure-of-merit (RDS(on) × Qg = 25.5 Ω·nC typ). Its gate threshold voltage (VGS(th) = 3–5 V) ensures reliable turn-on with standard 10 V logic-level drivers while maintaining noise immunity.
The device integrates a robust intrinsic body diode with trr = 308 ns and Qrr = 1.8 μC, enabling operation in freewheeling and synchronous rectification roles without external diode supplementation in medium-frequency (<100 kHz) topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports primary-side switching in offline 400 V DC bus applications |
| RDS(on) max | 0.85 Ω at VGS = 10 V - enables <1.4 W conduction loss at 4 A ID |
| Qg max | 30 nC - reduces gate drive power and allows use of low-cost 1 W drivers |
| EAS | 29 mJ - withstands unclamped inductive switching events in motor drives |
| RthJC | 0.8 °C/W - enables 156 W dissipation with modest heatsinking at TC = 25 °C |
| trr / Qrr | 308 ns / 1.8 μC - limits reverse recovery losses in flyback and LLC resonant converters |
Pinout & Package
Package: TO-220AB, through-hole, isolated tab (drain-connected), 3-pin configuration with industry-standard footprint and thermal mounting interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V drive for full enhancement; input capacitance Ciss = 527 pF affects driver sizing |
| D | Drain | High-voltage output node; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground |
| S | Source | Power return path and reference for gate drive; common node for current sensing and feedback in buck/boost topologies |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 25.5 Ω·nC typical - improves efficiency in 50–100 kHz hard-switched PSUs |
| Avalanche-rated (UIS) | 29 mJ single-pulse - eliminates need for external snubbers in inductive load switching |
| High body diode ruggedness | IS = 8 A continuous, ISM = 32 A pulsed - supports bidirectional current in half-bridge freewheeling |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C - qualified for industrial and consumer end-equipment |
Applications
| Server Power Supplies | Induction Heating |
|---|---|
Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with 500 V DC link and 8 A peak current. Use Value: Low Qg and fast switching reduce driver losses and EMI filter size; RthJC = 0.8 °C/W simplifies thermal design. | Use Scenario: Half-bridge inductor driver for 20–50 kHz domestic induction cooktop with IGBT-like ruggedness requirements. IC Role / Device Role / Timing Role: Main switching element handling repetitive 30 A pulsed currents and 400 V bus transients. Use Value: Avalanche rating (29 mJ) and high ISM (32 A) prevent failure during coil detuning or pan-absence events. |
| Motor Drives | Battery Chargers |
Use Scenario: Inverter leg in 3 kW industrial BLDC drive with regenerative braking and back-EMF commutation. IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in three-phase bridge; body diode conducts during dead-time. Use Value: Low trr (308 ns) and Qrr (1.8 μC) minimize shoot-through risk and conduction losses during commutation. | Use Scenario: Switching element in 600 W off-line Li-ion battery charger with universal AC input and PFC + LLC architecture. IC Role / Device Role / Timing Role: Primary-side MOSFET in LLC resonant converter stage operating at 200–500 kHz with zero-voltage switching. Use Value: Low Coss (52 pF) and Co(tr) (64 pF) support ZVS across wide load range; 500 V rating accommodates 450 V PFC output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V, 7.5 A, RDS(on) = 0.95 Ω, Qg = 32 nC, TO-220FP package (full-pack) | Lower ID rating and higher RDS(on); same avalanche rating but higher RthJA | Acceptable where lower current and higher thermal resistance are tolerable; not drop-in due to different package height and mounting |
| IXTH8N50L | 500 V, 8 A, RDS(on) = 0.9 Ω, Qg = 27 nC, TO-247AC package | Higher RthJC (0.95 °C/W), larger footprint, superior dV/dt immunity (30 V/ns) | Preferred for higher-reliability industrial systems requiring enhanced ruggedness and layout margin; requires PCB redesign |
Compared with STP8NK50ZFP and IXTH8N50L, the SIHP8N50D-GE3 offers the lowest RDS(on) × Qg FOM and best thermal resistance in TO-220AB, making it optimal for space-constrained, thermally demanding 50–100 kHz SMPS where gate drive simplicity and conduction efficiency are prioritized.
Availability
SIHP8N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHP8N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.
The D Series Power MOSFETs, including SIHP8N50D-GE3, were engineered for high-voltage switching in industrial and computing power conversion, balancing low conduction loss, fast switching, and ruggedness under repetitive stress conditions.
FAQ
What is the maximum continuous drain current rating for SIHP8N50D-GE3 at 100 °C case temperature?
The SIHP8N50D-GE3 has a maximum continuous drain current (ID) of 5.5 A when the case temperature (TC) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP8N50D-GE3 maintains stable RDS(on) performance up to this temperature due to its positive VDS temperature coefficient.
Does SIHP8N50D-GE3 support logic-level gate drive?
No, the SIHP8N50D-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3 V to 5 V, and it is fully enhanced at VGS = 10 V, where RDS(on) is specified. While it can turn on with 5 V drive, full performance (0.85 Ω RDS(on)) requires 10 V gate-source voltage. The SIHP8N50D-GE3 is intended for standard gate drivers, not 3.3 V or 5 V microcontroller outputs without level-shifting.
What is the significance of the "-GE3" suffix in SIHP8N50D-GE3?
Per Vishay's ordering nomenclature, the "-GE3" suffix indicates that the SIHP8N50D-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and JEDEC JS709C standards. It denotes both environmental compliance and packaging per Vishay's green initiative-distinct from the "-E3" variant, which is Pb-free but not necessarily halogen-free. The SIHP8N50D-GE3 uses matte tin plating on leads and halogen-free molding compound.
Can SIHP8N50D-GE3 replace SIHP8N50C-GE3 in existing designs?
No direct replacement is guaranteed. While both share the same voltage rating and package, the SIHP8N50D-GE3 has lower RDS(on) (0.85 Ω vs. 1.0 Ω for SIHP8N50C-GE3) and higher Qg (30 nC vs. 25 nC), altering switching behavior and gate drive requirements. Thermal and SOA curves also differ. The SIHP8N50D-GE3 may improve conduction loss but increase switching loss and require gate driver validation before substitution.
What is the recommended gate resistor value for SIHP8N50D-GE3 in a 100 kHz flyback converter?
Based on typical gate charge (Qg = 15–30 nC) and desired switching speed, a gate resistor of 9.1 Ω (as used in the datasheet's td(on)/td(off) test condition) provides balanced rise/fall times (~16–34 ns) and minimizes ringing. For 100 kHz flyback operation, 10–22 Ω is recommended to control EMI while avoiding excessive switching loss. The SIHP8N50D-GE3's low Crss (8 pF) makes it less sensitive to Miller-induced oscillation, supporting stable operation with moderate gate resistance.
SIHP8N50D-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 527 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP8N50D-GE3 FAQ
1.How can I place an order for SIHP8N50D-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP8N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP8N50D-GE3 reliable?
The price and inventory of SIHP8N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP8N50D-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP8N50D-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP8N50D-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP8N50D-GE3?
SIHP8N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP8N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP8N50D-GE3?
For technical support, including SIHP8N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP8N50D-GE3 requirements.
6.How does Aetrix verify that SIHP8N50D-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP8N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP8N50D-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP8N50D-GE3?
All SIHP8N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP8N50D-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP8N50D-GE3 part is unused and in its original packaging.
Return procedure for SIHP8N50D-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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