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Vishay Siliconix SIHR080N60E-T1-GE3
- Part No.:
- SIHR080N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Gull Wing
- Datasheet:
-
SIHR080N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET POWERPAK 8
- Quantity:
- Payment:
- Shipping:
Inventory:1,990
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Product details
Overview
SIHR080N60E-T1-GE3 from Vishay Siliconix is a 600 V, 51 A N-channel Power MOSFET in PowerPAK® 8 × 8LR package with RDS(on) = 0.074 Ω (typ. at VGS = 10 V), Qg = 42 nC (typ.), and EAS = 173 mJ - engineered for high-efficiency, high-frequency switching in server power supplies and PFC stages.
For engineers reviewing the SIHR080N60E-T1-GE3 datasheet, SIHR080N60E-T1-GE3 pinout, SIHR080N60E-T1-GE3 application, or SIHR080N60E-T1-GE3 equivalent, this device delivers low conduction loss, reduced switching energy via Co(er) = 79 pF, and Kelvin-source–enabled gate control for critical hard-switching and ZVS topologies.
Technical Context
This 4th-generation E-series MOSFET uses trench-gate silicon technology optimized for high-voltage SMPS. Its low RDS(on) × Qg figure of merit (≈3.1 nC·Ω) and low effective output capacitance (Co(er) = 79 pF) directly reduce total switching loss in continuous conduction mode (CCM) PFC and LLC resonant converters.
The PowerPAK® 8 × 8LR package integrates a Kelvin source terminal (Pin 3) to eliminate source inductance impact on gate drive loop stability, enabling precise threshold control and improved dV/dt immunity (dv/dt = 100 V/ns rated). It supports unclamped inductive switching up to 173 mJ with guaranteed UIS ruggedness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Maximum blocking voltage suitable for 400 V DC bus systems with 50 V margin in telecom/server PSUs |
| RDS(on) (typ.) | 0.074 Ω at VGS = 10 V, ID = 17 A - Enables <1.2 W conduction loss at 40 A RMS in PFC boost stage |
| Qg (typ.) | 42 nC - Low gate charge reduces driver power demand and enables >300 kHz operation with standard gate drivers |
| EAS | 173 mJ - Rated single-pulse avalanche energy supports robustness during transient overloads in motor drives and welders |
| Co(er) | 79 pF - Energy-related effective output capacitance minimizes turn-off loss and improves ZVS initiation in resonant topologies |
| TJ range | −55 °C to +150 °C - Wide junction temperature range supports operation in sealed industrial enclosures without derating |
| RthJC | 0.25 °C/W - Low junction-to-case thermal resistance allows 500 W dissipation with moderate heatsinking in compact form factors |
Pinout & Package
PowerPAK® 8 × 8LR is a surface-mount, thermally enhanced dual-side cooling package with exposed drain paddle (Pins 5–8), dual-source terminals (Pins 1–2), dedicated Kelvin source (Pin 3), and single gate (Pin 4). The bottom-side thermal pad requires solder paste stencil thickness of 200 µm per Vishay land pattern DWG 3022.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 5–8 | Drain (D) | Primary high-side current path and thermal interface to PCB copper pour or heatsink |
| Pin 4 | Gate (G) | Main gate control input; routed with low-inductance trace to minimize ringing during fast switching |
| Pin 3 | Kelvin Source (KS) | Reference return for gate driver feedback loop - isolates gate drive from power source inductance |
| Pins 1–2 | Source (S) | Main power source return path carrying full load current; electrically separate from KS |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E series technology | Optimized trench cell layout delivering 15 % lower RDS(on) × Qg vs. prior generation for same die size |
| Kelvin source connection | Enables stable gate drive under high di/dt conditions by eliminating source inductance coupling into gate loop |
| Avalanche-rated (UIS) | Guaranteed 173 mJ single-pulse energy handling without degradation - eliminates need for external snubbers in flyback/PFC |
| Low Co(er) = 79 pF | Reduces turn-off switching loss by ≈30 % compared to standard 600 V MOSFETs with similar RDS(on) |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912) |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: High-density 3 kW front-end AC/DC converter operating in continuous conduction mode (CCM) PFC stage. IC Role / Device Role / Timing Role: Main switch in boost PFC circuit, switching at 100–300 kHz with synchronous rectification downstream. Use Value: Low RDS(on) and Qg enable >96.5 % efficiency at full load; Kelvin source ensures stable gate timing under 100 A/µs di/dt transients. |
Use Scenario: 48 V telecom rectifier module with active clamp forward or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 50 A peak current and 600 V blocking duty. Use Value: EAS rating and dv/dt immunity allow reliable operation during line surges and short-circuit events without desaturation protection. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switching stage in string inverters converting 600–1000 V DC to 50/60 Hz AC using three-level NPC topology. IC Role / Device Role / Timing Role: High-side switch in NPC leg, requiring low Coss and controlled reverse recovery for reduced shoot-through risk. Use Value: Qrr = 5.2 µC (typ.) and soft body diode recovery minimize commutation losses and EMI in multi-kW inverters. |
Use Scenario: Inverter output stage driving 15 kW induction motor in HVAC or pump applications with field-oriented control. IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to repetitive inductive turn-off stress and thermal cycling. Use Value: RthJC = 0.25 °C/W and TJ = 150 °C rating support sustained 40 A RMS operation with minimal heatsink volume. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(on) = 0.065 Ω (lower), Qg = 72 nC (higher), no Kelvin source, TO-247 package | Larger footprint and higher gate drive loss; better for space-insensitive designs prioritizing RDS(on) | Choose STW62N60M2 only when board area and thermal mass permit TO-247 mounting and gate driver can handle 72 nC. |
| IXFH60N60X3 | RDS(on) = 0.062 Ω, Qg = 52 nC, TO-247, no Kelvin source, higher Ciss (3200 pF) | Higher switching loss due to larger input capacitance; suited for <200 kHz operation where layout inductance dominates | Select IXFH60N60X3 if legacy TO-247 socket compatibility is required and switching frequency remains below 150 kHz. |
Compared with STW62N60M2 and IXFH60N60X3, SIHR080N60E-T1-GE3 offers superior high-frequency efficiency via its Kelvin-source architecture and lowest Co(er), making it optimal for compact, high-density, >250 kHz PFC and resonant converters where layout parasitics constrain performance.
Availability
SIHR080N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.
Supply support for SIHR080N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The E Series Power MOSFET product line targets high-efficiency, high-frequency switching applications in datacenter, telecom, and renewable energy systems - designed to replace older planar devices with trench-based silicon offering lower FOM and enhanced ruggedness.
FAQ
What is the maximum continuous drain current rating for SIHR080N60E-T1-GE3 at 100 °C case temperature?
The SIHR080N60E-T1-GE3 has a continuous drain current rating of 32 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 51 A rating at 25 °C, based on a linear derating factor of 4.0 W/°C and RthJC = 0.25 °C/W. Designers must verify actual case temperature under operating conditions to ensure safe operation within this limit. SIHR080N60E-T1-GE3 maintains stable RDS(on) up to 150 °C junction temperature.
Does SIHR080N60E-T1-GE3 include a Kelvin source terminal, and how is it used in layout?
Yes, SIHR080N60E-T1-GE3 features a dedicated Kelvin source terminal (Pin 3) separate from main source pins (Pins 1–2). In PCB layout, Pin 3 must be routed directly to the gate driver IC's source reference pin with minimal trace length and no shared copper pour - isolating gate loop impedance from high-current source paths. This prevents dynamic threshold shift and oscillation during fast switching. SIHR080N60E-T1-GE3's datasheet specifies strict layout guidelines for this connection to achieve rated dv/dt immunity.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHR080N60E-T1-GE3, and why does it matter?
The typical reverse recovery charge (Qrr) of the integrated body diode in SIHR080N60E-T1-GE3 is 5.2 µC at TJ = 25 °C, IF = 17 A, and di/dt = 80 A/µs. This parameter directly impacts commutation loss and EMI in hard-switched topologies like synchronous buck or totem-pole PFC. Lower Qrr reduces voltage overshoot and diode recovery spikes, improving system efficiency and simplifying EMI filter design. SIHR080N60E-T1-GE3's Qrr is 25 % lower than legacy 600 V MOSFETs with comparable RDS(on).
Can SIHR080N60E-T1-GE3 be used in zero-voltage switching (ZVS) circuits, and what parameter supports this?
Yes, SIHR080N60E-T1-GE3 is well-suited for ZVS circuits such as LLC resonant converters due to its low effective output capacitance - specifically Co(er) = 79 pF (energy-related) and Co(tr) = 499 pF (time-related). These values determine the energy stored in Coss that must be discharged before turn-on, directly influencing ZVS boundary conditions. SIHR080N60E-T1-GE3's Co(er) is among the lowest in its 600 V class, enabling reliable ZVS down to lighter loads and higher frequencies. Its low Qg also supports precise timing control in resonant gate drivers.
Is SIHR080N60E-T1-GE3 compliant with RoHS and halogen-free standards?
Yes, SIHR080N60E-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements and Vishay's internal Green Standard (Document #99912). The "-GE3" suffix explicitly denotes compliance with both specifications. Material composition data is available in Vishay's official declaration (Doc. #99912), and the device carries no exemptions for restricted substances. SIHR080N60E-T1-GE3 is suitable for environmentally regulated markets including EU, China, and South Korea.
SIHR080N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerSMD, Gull Wing
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 84mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2557 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHR080N60E-T1-GE3 FAQ
1.How can I place an order for SIHR080N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHR080N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHR080N60E-T1-GE3 reliable?
The price and inventory of SIHR080N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHR080N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHR080N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHR080N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHR080N60E-T1-GE3?
SIHR080N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHR080N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHR080N60E-T1-GE3?
For technical support, including SIHR080N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHR080N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHR080N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHR080N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHR080N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHR080N60E-T1-GE3?
All SIHR080N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHR080N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHR080N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHR080N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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