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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHS36N50D-E3

Name: SIHS36N50D-E3
Brand: Vishay Siliconix
SKU: SIHS36N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHS36N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHS36N50D-E3.pdf

Description:: MOSFET N-CH 500V 36A SUPER-247

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Product details

Overview

SIHS36N50D-E3 from Vishay Siliconix is a 500 V, 36 A N-channel enhancement-mode Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.130 Ω at V_GS = 10 V, Q_g = 125 nC, and E_AS = 332 mJ, designed for high-efficiency SMPS in server power supplies and industrial motor drives.

For engineers reviewing the SIHS36N50D-E3 datasheet, SIHS36N50D-E3 pinout, SIHS36N50D-E3 application, or SIHS36N50D-E3 equivalent, this device supports fast switching with low C_iss (3233 pF), rugged body diode recovery (t_rr = 490 ns), and avalanche-rated operation-critical for hard-switched PFC and DC-DC primary-side switching stages.

Technical Context

This MOSFET employs planar vertical DMOS architecture optimized for high-voltage, medium-current applications. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low R_DS(on) × Q_g figure-of-merit (16.3 Ω·nC) minimizes conduction and switching losses simultaneously.

Thermal performance is defined by R_thJC = 0.28 °C/W and rated PD = 446 W at T_C = 25 °C. The integral body diode is specified for IS = 36 A continuous and I_SM = 144 A pulsed, with V_SD = 1.2 V and Q_rr = 8.2 μC at T_J = 25 °C-enabling robust freewheeling in bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports 400 V DC bus designs with 25 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on) max @ 25 °C	0.130 Ω - Enables <1.5 W conduction loss at 36 A, reducing heatsink requirements in compact 1–3 kW converters.
Q_g max	125 nC - Dictates gate drive power and rise/fall time; paired with R_g = 9.1 Ω yields t_r = 89–134 ns for <100 kHz operation.
E_AS	332 mJ - Confirmed single-pulse unclamped inductive switching capability up to I_AS = 17 A, enabling robust fault tolerance.
t_rr	490 ns - Body diode reverse recovery time measured at dI/dt = 100 A/μs; critical for ZVS/ZCS design validation in LLC resonant converters.
R_thJC	0.28 °C/W - Enables junction temperature control under high-power pulse conditions; allows >300 W dissipation with 85 °C case temp.

Pinout & Package

Package: Super-247 (TO-274AA), thermally enhanced through-hole package with isolated drain tab, JEDEC-compliant outline, tin-plated leads, and 0.28 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path / heat sink interface	Electrically and thermally connected to metal tab; must be mounted to heatsink with electrically isolating thermal pad or washer.
G (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; requires gate resistor (R_g) to damp ringing and control dv/dt.
S (Source)	Reference node for gate drive and current return	Common return path for load current and gate drive loop; layout must minimize inductance to avoid shoot-through during switching.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	16.3 Ω·nC - Directly reduces total power loss in hard-switched topologies, improving efficiency at 50–100 kHz.
Avalanche energy rating (E_AS)	332 mJ - Validated under unclamped inductive switching; eliminates need for external snubbers in flyback or forward converters.
Body diode ruggedness	t_rr = 490 ns, Q_rr = 8.2 μC, I_RRM = 31 A - Enables reliable synchronous rectification or freewheeling in half-bridge configurations without oscillation.
Low C_iss	3233 pF - Reduces gate drive power and improves noise immunity; enables stable operation with standard 10 V logic-level drivers.
High dV/dt immunity	24 V/ns at T_J = 125 °C - Suppresses false turn-on in high-noise environments such as motor drive inverters or welding equipment.

Applications

Server SMPS Primary Switch	Industrial Motor Drive Inverter
Use Scenario: High-density 1U server power supply operating at 48 V output, 80 PLUS Titanium efficiency, using active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side switching device handling 400 V DC bus, switching at 100–200 kHz with zero-voltage switching assistance. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >96 % efficiency at full load without forced air cooling.	Use Scenario: 3-phase inverter stage in 5–10 kW industrial servo drive, driving permanent magnet synchronous motor. IC Role / Device Role / Timing Role: High-side leg switch in IGBT/MOSFET hybrid inverter, operating in 6–16 kHz PWM mode with regenerative braking. Use Value: Avalanche rating and rugged body diode allow safe commutation during regeneration without external diodes or clamps.
Telecom Rectifier Module	Induction Heating Half-Bridge
Use Scenario: -48 V telecom rectifier with 3.3 kW output, using phase-shifted full-bridge with synchronous rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in high-frequency transformer secondary winding. Use Value: Low R_DS(on) (0.130 Ω) and fast body diode recovery (t_rr = 490 ns) minimize conduction loss and reverse recovery loss at 200–500 kHz.	Use Scenario: Resonant half-bridge in 20–50 kHz induction heating system for metal forging, requiring high peak current and thermal cycling. IC Role / Device Role / Timing Role: Main switching device in series-resonant tank, subjected to repetitive high di/dt and voltage overshoot. Use Value: 332 mJ E_AS and 0.28 °C/W R_thJC ensure reliability under repeated short-circuit and overload transients without derating.

Server SMPS Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 1U server power supply operating at 48 V output, 80 PLUS Titanium efficiency, using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side switching device handling 400 V DC bus, switching at 100–200 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >96 % efficiency at full load without forced air cooling.

Use Scenario: 3-phase inverter stage in 5–10 kW industrial servo drive, driving permanent magnet synchronous motor.

IC Role / Device Role / Timing Role: High-side leg switch in IGBT/MOSFET hybrid inverter, operating in 6–16 kHz PWM mode with regenerative braking.

Use Value: Avalanche rating and rugged body diode allow safe commutation during regeneration without external diodes or clamps.

Telecom Rectifier Module

Induction Heating Half-Bridge

Use Scenario: -48 V telecom rectifier with 3.3 kW output, using phase-shifted full-bridge with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in high-frequency transformer secondary winding.

Use Value: Low R_DS(on) (0.130 Ω) and fast body diode recovery (t_rr = 490 ns) minimize conduction loss and reverse recovery loss at 200–500 kHz.

Use Scenario: Resonant half-bridge in 20–50 kHz induction heating system for metal forging, requiring high peak current and thermal cycling.

IC Role / Device Role / Timing Role: Main switching device in series-resonant tank, subjected to repetitive high di/dt and voltage overshoot.

Use Value: 332 mJ E_AS and 0.28 °C/W R_thJC ensure reliability under repeated short-circuit and overload transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW36NM50ND	R_DS(on) = 0.125 Ω, Q_g = 110 nC, TO-247 package, no E_AS rating published	Lacks documented avalanche energy rating; suitable only where circuit protection prevents unclamped inductive stress	Prefer SIHS36N50D-E3 when E_AS > 300 mJ is required for fault robustness.
IXFH36N50P	R_DS(on) = 0.140 Ω, Q_g = 135 nC, TO-247 package, E_AS = 290 mJ	Higher R_DS(on) and lower E_AS; slower t_r/t_f due to higher Q_gd	Acceptable for lower-frequency (<50 kHz) industrial motor drives where thermal margin exists.

Compared with STW36NM50ND and IXFH36N50P, the SIHS36N50D-E3 delivers superior avalanche ruggedness (332 mJ), lowest R_DS(on) × Q_g, and optimized Super-247 thermal performance-making it the preferred choice for high-reliability, high-frequency SMPS and inverter primary switches.

Availability

SIHS36N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHS36N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHS36N50D-E3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage, medium-current switching in demanding industrial and telecom power conversion applications.

FAQ

What is the maximum continuous drain current rating for SIHS36N50D-E3 at 100 °C case temperature?

The SIHS36N50D-E3 has a continuous drain current rating of 23 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 36 A rating at T_C = 25 °C, based on a linear derating factor of 3.6 W/°C. Designers must verify heatsink performance to maintain case temperature within limits for sustained 23 A operation.

Does SIHS36N50D-E3 support logic-level gate drive?

No, SIHS36N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Reliable enhancement-mode operation requires ≥10 V gate drive; 5 V logic signals will not fully turn on the device and may cause excessive conduction loss or thermal runaway.

What is the body diode forward voltage of SIHS36N50D-E3 at 18 A and 25 °C?

The body diode forward voltage (V_SD) of SIHS36N50D-E3 is 1.2 V at I_S = 18 A, T_J = 25 °C, and V_GS = 0 V. This value is confirmed in the "Drain-source body diode characteristics" section of the datasheet and is critical for estimating freewheeling losses in non-synchronous topologies.

Is SIHS36N50D-E3 lead (Pb)-free and halogen-free?

Yes, SIHS36N50D-E3 is lead (Pb)-free and halogen-free, as explicitly stated in the Ordering Information section of the Vishay datasheet (Document Number: 91514). It complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc?99912.

What is the typical input capacitance (C_iss) of SIHS36N50D-E3 and how does it affect gate drive design?

The typical input capacitance (C_iss) of SIHS36N50D-E3 is 3233 pF at V_DS = 100 V and f = 1 MHz. This high C_iss demands robust gate drivers capable of delivering >1 A peak current to achieve fast switching transitions; insufficient drive strength increases switching losses and causes gate oscillation, especially in high-dV/dt environments.

SIHS36N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3233 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHS36N50D-E3 FAQ

1.How can I place an order for SIHS36N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHS36N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHS36N50D-E3 reliable?

The price and inventory of SIHS36N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHS36N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHS36N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHS36N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHS36N50D-E3?

SIHS36N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHS36N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHS36N50D-E3?

For technical support, including SIHS36N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHS36N50D-E3 requirements.

6.How does Aetrix verify that SIHS36N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHS36N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHS36N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHS36N50D-E3?

All SIHS36N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHS36N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHS36N50D-E3 part is unused and in its original packaging.

Return procedure for SIHS36N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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