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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHS36N50D-GE3

Name: SIHS36N50D-GE3
Brand: Vishay Siliconix
SKU: SIHS36N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHS36N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHS36N50D-GE3.pdf

Description:: D SERIES POWER MOSFET SUPER-247,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHS36N50D-GE3 from Vishay Siliconix is a 500 V, 36 A N-channel enhancement-mode Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.130 Ω at V_GS = 10 V, Q_g = 125 nC, and avalanche-rated (E_AS = 332 mJ). It serves as a high-voltage switching element in offline SMPS, server power supplies, and industrial motor drives.

For engineers reviewing the SIHS36N50D-GE3 datasheet, SIHS36N50D-GE3 pinout, SIHS36N50D-GE3 application, or SIHS36N50D-GE3 equivalent, key selection criteria include its 500 V V_DS rating, low 0.130 Ω on-resistance at 10 V gate drive, 125 nC total gate charge, rugged body diode with t_rr = 490 ns, and Super-247 thermal performance (R_thJC = 0.28 °C/W).

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (3233 pF) and C_oss (285 pF) reduce capacitive losses, while the 0.105 Ω typical R_DS(on) enables efficient conduction at 18 A drain current.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with validated 332 mJ single-pulse avalanche energy (V_DD = 50 V, L = 2.3 mH, I_AS = 17 A) and dV/dt immunity up to 24 V/ns at T_J = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transients
R_DS(on) max @ 10 V	0.130 Ω - delivers ≤ 84 W conduction loss at 36 A continuous drain current
Q_g max	125 nC - determines gate driver power requirement and switching speed trade-off
E_AS	332 mJ - enables robust operation under unclamped inductive load conditions
t_rr	490 ns - limits reverse recovery losses during hard commutation of body diode
R_thJC	0.28 °C/W - allows 446 W power dissipation with ≤ 125 °C case-to-junction rise
I_D cont @ T_C = 100 °C	23 A - defines usable current derating in thermally constrained heatsink environments

Pinout & Package

Super-247 (TO-274AA) package with isolated drain tab, rated for high-voltage isolation and high-power thermal dissipation. Metal tab is electrically connected to drain (D), requiring insulated mounting in most applications.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating
D	Drain	Main high-side power terminal; electrically tied to metal tab; must be isolated from heatsink
S	Source	Power return and reference node for gate drive; connects to low-side switch or ground

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	16.3 Ω·nC - improves efficiency in high-frequency switching converters (e.g., >100 kHz)
Avalanche energy rated	332 mJ - eliminates need for external snubbers in inductive load switching
High body diode ruggedness	Rated for repetitive ISD ≤ ID with t_rr = 490 ns and Q_rr = 8.2 μC - supports bidirectional current in LLC resonant topologies
Low input capacitance	C_iss = 3233 pF - reduces gate drive losses and EMI generation during fast transitions
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in high-noise, high-dV/dt environments like motor drives

Applications

Server SMPS Primary Switch	Industrial Motor Drive Half-Bridge
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: High-side main switch in active clamp forward or LLC resonant converter. Use Value: 0.130 Ω R_DS(on) minimizes conduction loss at 36 A peak current; 125 nC Q_g enables clean 50 ns turn-on with standard 2 A gate driver.	Use Scenario: 7.5 kW three-phase inverter for HVAC compressor control with 600 V bus. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg with freewheeling body diode conduction. Use Value: 490 ns t_rr and 31 A I_RRM ensure low-loss body diode commutation during PWM dead-time; 332 mJ E_AS withstands inductive kickback during fault events.
Welding Inverter Output Stage	Battery Charger DC-DC Isolation Stage
Use Scenario: 12 kW IGBT replacement in medium-frequency inverter welding power supply (20–50 kHz). IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology handling 500 V bus and 112 A pulsed current. Use Value: 112 A I_DM and 0.28 °C/W R_thJC support high peak-current bursts without thermal runaway; TO-274AA package enables direct bolt-down to liquid-cooled cold plate.	Use Scenario: 3.6 kW isolated bi-directional DC-DC stage in EV on-board charger (OBC), interfacing 400 V battery and 48 V auxiliary system. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in dual-active-bridge (DAB) topology. Use Value: Low 1.2 V V_SD at 18 A reduces forward conduction loss in reverse power flow mode; 100 μA I_DSS at 500 V ensures minimal leakage in high-impedance standby states.

Server SMPS Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side main switch in active clamp forward or LLC resonant converter.

Use Value: 0.130 Ω R_DS(on) minimizes conduction loss at 36 A peak current; 125 nC Q_g enables clean 50 ns turn-on with standard 2 A gate driver.

Use Scenario: 7.5 kW three-phase inverter for HVAC compressor control with 600 V bus.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg with freewheeling body diode conduction.

Use Value: 490 ns t_rr and 31 A I_RRM ensure low-loss body diode commutation during PWM dead-time; 332 mJ E_AS withstands inductive kickback during fault events.

Welding Inverter Output Stage

Battery Charger DC-DC Isolation Stage

Use Scenario: 12 kW IGBT replacement in medium-frequency inverter welding power supply (20–50 kHz).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology handling 500 V bus and 112 A pulsed current.

Use Value: 112 A I_DM and 0.28 °C/W R_thJC support high peak-current bursts without thermal runaway; TO-274AA package enables direct bolt-down to liquid-cooled cold plate.

Use Scenario: 3.6 kW isolated bi-directional DC-DC stage in EV on-board charger (OBC), interfacing 400 V battery and 48 V auxiliary system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in dual-active-bridge (DAB) topology.

Use Value: Low 1.2 V V_SD at 18 A reduces forward conduction loss in reverse power flow mode; 100 μA I_DSS at 500 V ensures minimal leakage in high-impedance standby states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW36N60M2	600 V V_DS, 0.125 Ω R_DS(on), 110 nC Q_g, TO-247 package	Higher voltage rating but lower thermal resistance (0.25 °C/W); no avalanche rating specified	Preferred where 600 V margin is required and avalanche robustness is secondary
IXFH36N50P	500 V V_DS, 0.135 Ω R_DS(on), 132 nC Q_g, TO-247 package, 250 mJ E_AS	Higher Q_g and lower avalanche energy; same voltage/current ratings	Acceptable where gate drive capability exceeds 2 A and transient energy is limited

Compared with STW36N60M2 and IXFH36N50P, SIHS36N50D-GE3 offers superior avalanche ruggedness (332 mJ vs. unspecified/250 mJ) and lower thermal resistance (0.28 °C/W vs. 0.35–0.40 °C/W), making it optimal for unclamped inductive switching and high-power density designs requiring long-term reliability under stress.

Availability

SIHS36N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and welding inverters requiring stable component supply, lead-free compliance, and high-reliability high-voltage switching.

Supply support for SIHS36N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The D Series Power MOSFETs-including SIHS36N50D-GE3-are engineered for high-voltage, high-current hard-switching applications such as telecom rectifiers, industrial motor controls, and induction heating systems.

FAQ

What is the maximum continuous drain current rating for SIHS36N50D-GE3 at 100 °C case temperature?

The SIHS36N50D-GE3 has a maximum continuous drain current (I_D) of 23 A when the case temperature (T_C) is maintained at 100 °C. This value reflects thermal derating from its 36 A rating at T_C = 25 °C, based on a linear derating factor of 3.6 W/°C and R_thJC = 0.28 °C/W. Proper heatsinking is essential to sustain this current in real-world operation.

Does SIHS36N50D-GE3 support logic-level gate drive?

No, SIHS36N50D-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is specified for full enhancement at V_GS = 10 V. Driving it with only 5 V may result in incomplete turn-on and excessive R_DS(on); a 10–15 V gate drive is recommended for optimal conduction and switching performance in the SIHS36N50D-GE3.

What is the significance of the "-GE3" suffix in SIHS36N50D-GE3?

"-GE3" denotes Vishay's lead (Pb)-free and halogen-free packaging standard per JEDEC J-STD-609. It confirms that SIHS36N50D-GE3 uses matte tin-plated leads, complies with RoHS Directive 2011/65/EU, and meets Vishay's material categorization requirements for environmentally conscious manufacturing. The "E3" code specifically identifies the plating and finish specification applied to the Super-247 package terminals.

Can SIHS36N50D-GE3 replace older SiHS36N50D versions in existing designs?

Yes, SIHS36N50D-GE3 is a direct drop-in replacement for prior revisions of SiHS36N50D (e.g., non-GE3 variants) within the same Super-247 package. Electrical specifications, pinout, thermal characteristics, and mechanical dimensions remain identical; only the plating and environmental compliance have been updated. No PCB or layout changes are required when upgrading to SIHS36N50D-GE3.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHS36N50D-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHS36N50D-GE3 is 8.2 μC, measured at T_J = 25 °C, I_F = 18 A, dI/dt = 100 A/μs, and V_R = 20 V. This parameter directly impacts switching losses during freewheeling conduction and must be accounted for in snubber design and EMI filtering for topologies relying on body diode commutation, such as asymmetrical half-bridge or flyback converters.

SIHS36N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: D

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3233 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHS36N50D-GE3 FAQ

1.How can I place an order for SIHS36N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHS36N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHS36N50D-GE3 reliable?

The price and inventory of SIHS36N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHS36N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHS36N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHS36N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHS36N50D-GE3?

SIHS36N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHS36N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHS36N50D-GE3?

For technical support, including SIHS36N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHS36N50D-GE3 requirements.

6.How does Aetrix verify that SIHS36N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHS36N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHS36N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHS36N50D-GE3?

All SIHS36N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHS36N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHS36N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHS36N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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