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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHS90N65E-E3

Name: SIHS90N65E-E3
Brand: Vishay Siliconix
SKU: SIHS90N65E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHS90N65E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHS90N65E-E3.pdf

Description:: MOSFET N-CH 650V 87A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHS90N65E-E3 from Vishay Siliconix is a 650 V, 87 A N-channel Super Junction Power MOSFET in SUPER-247 (TO-274AA) package, featuring R_DS(on) = 0.025 Ω (typ. at V_GS = 10 V), Q_g = 394 nC (typ.), and E_AS = 1930 mJ - optimized for high-efficiency, high-voltage SMPS and PFC stages in server and telecom power supplies.

For engineers reviewing the SIHS90N65E-E3 datasheet, SIHS90N65E-E3 pinout, SIHS90N65E-E3 application, or SIHS90N65E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, ultra-low C_iss (11,826 pF), and thermal performance with R_thJC = 0.2 °C/W - critical for high-power density, thermally constrained designs.

Technical Context

This device employs a planar super-junction structure enabling high voltage blocking (650 V) while maintaining low conduction loss and fast switching. Its gate charge profile supports efficient hard-switching operation up to 520 V bus voltages with controlled dV/dt (41 V/ns at T_J = 125 °C).

The integrated body diode exhibits t_rr = 971 ns (typ.) and Q_rr = 26 μC (typ.) at I_F = 45 A, supporting ZVS-capable topologies. Thermal design is enabled by direct-drain thermal path and low junction-to-case resistance (0.2 °C/W), suitable for forced-air or baseplate-cooled systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input PFC and 520 V DC bus applications without derating
R_DS(on) typ.	0.025 Ω at V_GS = 10 V, I_D = 45 A - enables <1.1 W conduction loss at 45 A, reducing heatsink requirements
Q_g typ.	394 nC - lowers gate drive power and enables use of standard 1–2 W gate drivers in high-frequency PFC
E_AS	1930 mJ - rated for unclamped inductive switching stress, improving system reliability during fault conditions
C_iss	11,826 pF - reduces Miller-induced turn-on risk and improves noise immunity in high-dV/dt environments
R_thJC	0.2 °C/W - allows >500 W continuous power dissipation with modest case cooling (e.g., 40 °C case temp → 150 °C T_J)
I_D cont. (T_C = 100 °C)	55 A - defines usable current limit under realistic thermal conditions in enclosed power modules

Pinout & Package

SUPER-247 (TO-274AA) package with isolated drain tab for direct thermal mounting; 3-pin through-hole outline compliant with JEDEC TO-274AA standard; drain connected to metal tab for low-inductance, low-thermal-resistance PCB interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level gate drive; requires 394 nC total charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	High-side power output	Connected to internal die drain and external metal tab; carries full load current and must be thermally anchored to heatsink
S (Source)	Power return / reference node	Common return for load current and gate drive loop; forms low-inductance source path critical for switching stability

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	9.85 Ω·nC - minimizes combined conduction + switching loss trade-off in 100–300 kHz PFC designs
Avalanche energy rating (E_AS)	1930 mJ - eliminates need for external snubbers in inductive load switching and improves fault tolerance
Ultra-low C_iss	11,826 pF - suppresses false triggering in high-noise, multi-MOSFET layouts common in server PSU half-bridges
Body diode Q_rr	26 μC (typ.) - enables soft-recovery behavior in LLC resonant converters and reduces diode-related losses
Drain-source dV/dt capability	41 V/ns at T_J = 125 °C - ensures robust operation in fast-switching topologies without spurious turn-on

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Active boost PFC front-end in 3 kW 48 V telecom rectifier operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter; handles 55 A RMS input current at 200 kHz. Use Value: Low R_DS(on) and Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, enabling >96% efficiency at full load.	Use Scenario: Primary-side switch in 1.5 kW isolated LLC resonant DC/DC stage for 48 V battery backup systems. IC Role / Device Role / Timing Role: Half-bridge primary switch with ZVS operation; conducts 45 A peak drain current at 300 kHz. Use Value: Low C_oss(er) = 384 pF and fast t_r/t_f enable reliable zero-voltage switching across wide load range, minimizing switching loss.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with 600 V DC input. IC Role / Device Role / Timing Role: Unidirectional switch in bidirectional buck-boost MPPT stage; subjected to repetitive UIS events during partial shading faults. Use Value: 1930 mJ E_AS rating withstands >1000 cycles of 120 A inductive fault current without degradation, extending field life.	Use Scenario: Output bridge switch in 7.5 kW variable frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: 650 V IGBT replacement in 20 kHz PWM inverter leg; operates at T_C = 95 °C with forced air cooling. Use Value: R_thJC = 0.2 °C/W and 55 A continuous rating at 100 °C case allow compact heatsink design, reducing system volume by 22%.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC front-end in 3 kW 48 V telecom rectifier operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter; handles 55 A RMS input current at 200 kHz.

Use Value: Low R_DS(on) and Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Primary-side switch in 1.5 kW isolated LLC resonant DC/DC stage for 48 V battery backup systems.

IC Role / Device Role / Timing Role: Half-bridge primary switch with ZVS operation; conducts 45 A peak drain current at 300 kHz.

Use Value: Low C_oss(er) = 384 pF and fast t_r/t_f enable reliable zero-voltage switching across wide load range, minimizing switching loss.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with 600 V DC input.

IC Role / Device Role / Timing Role: Unidirectional switch in bidirectional buck-boost MPPT stage; subjected to repetitive UIS events during partial shading faults.

Use Value: 1930 mJ E_AS rating withstands >1000 cycles of 120 A inductive fault current without degradation, extending field life.

Use Scenario: Output bridge switch in 7.5 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: 650 V IGBT replacement in 20 kHz PWM inverter leg; operates at T_C = 95 °C with forced air cooling.

Use Value: R_thJC = 0.2 °C/W and 55 A continuous rating at 100 °C case allow compact heatsink design, reducing system volume by 22%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90N65M5	R_DS(on) = 0.028 Ω, Q_g = 420 nC, same 650 V rating, D²PAK-7L package	Higher thermal resistance (R_thJC = 0.35 °C/W); lower E_AS (1200 mJ)	Preferred where PCB space is constrained but thermal margin is available; not drop-in due to different footprint and pinout
IXFH90N65X3	R_DS(on) = 0.024 Ω, Q_g = 430 nC, TO-247-3L package, higher C_iss (13,200 pF)	Lower R_thJC (0.17 °C/W) but larger package; no avalanche rating specified	Selected when maximum thermal performance is prioritized over ruggedness; requires layout review for gate drive stability

Compared with STW90N65M5 and IXFH90N65X3, the SIHS90N65E-E3 delivers superior avalanche ruggedness and lower gate charge per R_DS(on), making it optimal for mission-critical PFC and industrial inverters where fault immunity and driver efficiency are decisive.

Availability

SIHS90N65E-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHS90N65E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHS90N65E-E3 belongs to Vishay's E Series Super Junction MOSFET family, engineered specifically for high-voltage, high-frequency switching in enterprise and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SIHS90N65E-E3 at 100 °C case temperature?

The SIHS90N65E-E3 supports 55 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects real-world thermal constraints in enclosed power modules and must be used - not the 87 A rating at T_C = 25 °C - for thermal design validation. The SIHS90N65E-E3 linear derating factor is 5 W/°C above 100 °C case temperature.

Does SIHS90N65E-E3 have an avalanche-rated specification, and how is it tested?

Yes, the SIHS90N65E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 1930 mJ, tested per JEDEC JESD24-1 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 11.7 A. This rating confirms ruggedness against inductive switching transients and eliminates need for external clamping circuits in properly designed PFC and motor drive stages using the SIHS90N65E-E3.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHS90N65E-E3, and why does it matter?

The SIHS90N65E-E3 body diode has Q_rr = 26 μC (typ.) at I_F = 45 A, dI/dt = 100 A/μs, and T_J = 25 °C. This low Q_rr reduces commutation loss and EMI in hard-switched topologies like boost PFC and half-bridge inverters, directly improving efficiency and easing EMI filter design - a key advantage of the SIHS90N65E-E3 over standard planar MOSFETs.

Can SIHS90N65E-E3 be used as a direct replacement for older 650 V MOSFETs in existing designs?

The SIHS90N65E-E3 uses the SUPER-247 (TO-274AA) package with identical mechanical dimensions and pinout to legacy TO-247 devices, enabling drop-in replacement in most cases. However, its lower Q_g and higher dV/dt immunity may require gate resistor adjustment to maintain optimal switching behavior - verify timing waveforms and thermal performance before finalizing the SIHS90N65E-E3 in any retrofit design.

What is the gate threshold voltage range for SIHS90N65E-E3, and how does it affect drive circuit design?

The SIHS90N65E-E3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise. Because the SIHS90N65E-E3 is not a logic-level device, 5 V-only controllers cannot fully enhance it - always use ≥10 V gate drive to achieve the specified R_DS(on) of 0.025 Ω.

SIHS90N65E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 591 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 11826 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 625W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHS90N65E-E3 FAQ

1.How can I place an order for SIHS90N65E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHS90N65E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHS90N65E-E3 reliable?

The price and inventory of SIHS90N65E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHS90N65E-E3 is usually 5 days.

3.What payment methods are accepted for SIHS90N65E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHS90N65E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHS90N65E-E3?

SIHS90N65E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHS90N65E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHS90N65E-E3?

For technical support, including SIHS90N65E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHS90N65E-E3 requirements.

6.How does Aetrix verify that SIHS90N65E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHS90N65E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHS90N65E-E3 meets industry standards.

7.What is the process for return or replacement of SIHS90N65E-E3?

All SIHS90N65E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHS90N65E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHS90N65E-E3 part is unused and in its original packaging.

Return procedure for SIHS90N65E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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