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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHS90N65E-GE3

Name: SIHS90N65E-GE3
Brand: Vishay Siliconix
SKU: SIHS90N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHS90N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHS90N65E-GE3.pdf

Description:: E SERIES POWER MOSFET SUPER-247,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHS90N65E-GE3 from Vishay Siliconix is a 650 V, 87 A N-channel superjunction power MOSFET in SUPER-247 (TO-274AA) package, featuring R_DS(on) = 0.025 Ω (typ. at V_GS = 10 V), Q_g = 394 nC (typ.), and E_AS = 1930 mJ - optimized for high-efficiency, high-frequency switching in server PSUs and PFC stages.

For engineers reviewing the SIHS90N65E-GE3 datasheet, SIHS90N65E-GE3 pinout, SIHS90N65E-GE3 application, or SIHS90N65E-GE3 equivalent, this device is selected for its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and avalanche-rated ruggedness in hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs superjunction cell architecture to achieve simultaneous low conduction loss and fast switching. Its C_iss = 11,826 pF and C_oss = 528 pF support efficient resonant and quasi-resonant topologies, while dV/dt rating of 41 V/ns at T_J = 125 °C enables stable operation in noisy high-voltage bus environments.

The integral body diode exhibits t_rr = 971 ns (typ.) and Q_rr = 26 μC at T_J = 25 °C, with soft recovery characteristics validated under 100 A/μs dI/dt - critical for minimizing voltage overshoot in bridge-leg configurations used in solar inverters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified systems with ≥20 % margin for transient overvoltage in telecom/server SMPS.
R_DS(on) typ.	0.025 Ω at V_GS = 10 V - delivers ≤2.5 W conduction loss at 10 A RMS, enabling compact thermal design in high-power PFC.
Q_g typ.	394 nC - reduces gate drive power and enables use of lower-current drivers in 100–300 kHz switching applications.
E_AS	1930 mJ - withstands unclamped inductive switching events without failure, critical for reliability in welder and induction heater primary switches.
t_r/t_f	152/267 ns (typ.) - enables fast transition between on/off states, minimizing overlap loss in phase-shifted full-bridge converters.
T_J range	−55 °C to +150 °C - qualified for extended thermal operation in enclosed industrial enclosures and outdoor PV inverters.
R_thJC	0.2 °C/W - allows direct heatsink mounting with minimal thermal interface resistance, supporting >500 W continuous dissipation.

Pinout & Package

SUPER-247 (TO-274AA) package with isolated drain tab, 3-pin through-hole configuration. Mounting surface is electrically connected to drain (D); case temperature (T_C) referenced to drain tab per JEDEC standard.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 10 V threshold (2.0–4.0 V range); low C_iss enables fast turn-on with minimal driver stress.
D	Drain	Main high-side switching node; electrically tied to metal tab - must be insulated from heatsink unless system ground-referenced.
S	Source	Power return path and reference for gate drive; connects to low-side switch source or current-sense resistor in half-bridge layouts.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.85 Ω·nC - balances conduction and switching losses for optimal efficiency across 50–250 kHz PFC and LLC designs.
Avalanche energy rating	1930 mJ single-pulse - eliminates need for external snubbers in flyback and forward converter primary switches.
Soft-recovery body diode	Q_rr = 26 μC, t_rr = 971 ns - reduces EMI and voltage spikes during commutation in synchronous rectifier and bidirectional DC/DC stages.
High dV/dt immunity	41 V/ns at 125 °C - prevents false turn-on in high dv/dt environments such as motor drive inverter legs and HV battery disconnect switches.
Lead (Pb)-free construction	RoHS-compliant Super-247 package with matte tin-plated leads - compatible with standard reflow and wave soldering profiles.

Applications

Server Power Supplies	Photovoltaic Inverters
Use Scenario: Primary-side switch in active clamp forward or phase-shifted full-bridge topology for 3 kW server PSU. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC bus with 100–200 kHz switching. Use Value: Low Q_g and R_DS(on) reduce total losses by >12 % vs. legacy 600 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.	Use Scenario: DC-link switch in string-level PV inverter stage converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter leg operating up to 16 kHz. Use Value: Avalanche rating and soft diode enable reliable operation without external freewheeling diodes, reducing BOM count and layout area.
Industrial Motor Drives	Induction Heating Systems
Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with field-oriented control. IC Role / Device Role / Timing Role: Low-side switching device in three-phase bridge, conducting continuous 45 A RMS current. Use Value: R_thJC = 0.2 °C/W allows direct heatsink mounting with <10 °C junction rise at full load, eliminating thermal interface pads.	Use Scenario: Resonant tank switch in 15 kW domestic induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary switch subjected to repetitive 650 V blocking and 87 A peak current. Use Value: Low C_oss (528 pF) and Co(tr) = 1502 pF ensure predictable ZVS timing and reduced circulating current losses.

Server Power Supplies

Photovoltaic Inverters

Use Scenario: Primary-side switch in active clamp forward or phase-shifted full-bridge topology for 3 kW server PSU.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC bus with 100–200 kHz switching.

Use Value: Low Q_g and R_DS(on) reduce total losses by >12 % vs. legacy 600 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.

Use Scenario: DC-link switch in string-level PV inverter stage converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter leg operating up to 16 kHz.

Use Value: Avalanche rating and soft diode enable reliable operation without external freewheeling diodes, reducing BOM count and layout area.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching device in three-phase bridge, conducting continuous 45 A RMS current.

Use Value: R_thJC = 0.2 °C/W allows direct heatsink mounting with <10 °C junction rise at full load, eliminating thermal interface pads.

Use Scenario: Resonant tank switch in 15 kW domestic induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) primary switch subjected to repetitive 650 V blocking and 87 A peak current.

Use Value: Low C_oss (528 pF) and Co(tr) = 1502 pF ensure predictable ZVS timing and reduced circulating current losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90N65M5	R_DS(on) = 0.028 Ω, Q_g = 430 nC, TO-247 package (non-isolated drain)	Lacks avalanche rating (no E_AS spec); requires external clamping in inductive loads	Prefer SIHS90N65E-GE3 where unclamped inductive switching or high-reliability PFC is required.
IXFH90N65X3	R_DS(on) = 0.024 Ω, Q_g = 340 nC, but higher C_oss (720 pF) and no soft diode data	Higher switching loss in resonant topologies due to elevated C_oss; diode recovery not characterized	Choose SIHS90N65E-GE3 when soft recovery and low EMI in bridge-leg commutation are mandatory.

Compared with STW90N65M5 and IXFH90N65X3, the SIHS90N65E-GE3 uniquely combines avalanche ruggedness, soft-body-diode behavior, and industry-leading FOM - making it the preferred choice for mission-critical PFC, solar inverters, and industrial SMPS where reliability and efficiency co-optimize.

Availability

SIHS90N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHS90N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHS90N65E-GE3 belongs to Vishay's E Series superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHS90N65E-GE3 at 100 °C case temperature?

The SIHS90N65E-GE3 supports 55 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SUPER-247 package and ensures safe operation without exceeding T_J = 150 °C under typical heatsink conditions. The SIHS90N65E-GE3 maintains R_DS(on) stability across this range due to its positive V_GS(th) temperature coefficient.

Does SIHS90N65E-GE3 have a fully characterized body diode for synchronous rectification?

Yes - the SIHS90N65E-GE3 body diode is fully characterized with t_rr = 971 ns (typ.), Q_rr = 26 μC (typ.), and I_RRM = 42 A (typ.) at T_J = 25 °C. Its soft recovery profile minimizes voltage overshoot during commutation, making the SIHS90N65E-GE3 suitable for synchronous rectifier roles in LLC resonant converters where reverse recovery behavior directly impacts efficiency and EMI.

Can SIHS90N65E-GE3 replace older 600 V MOSFETs in existing PFC designs?

The SIHS90N65E-GE3 offers 650 V V_DS rating, 0.025 Ω R_DS(on), and 394 nC Q_g - providing higher voltage margin and lower losses than most 600 V predecessors. However, gate drive requirements and SOA curves differ; redesign verification is needed for thermal, dv/dt, and avalanche robustness. The SIHS90N65E-GE3 is not a drop-in replacement but a performance upgrade requiring layout and drive optimization.

What is the thermal resistance from junction to case (R_thJC) for SIHS90N65E-GE3?

The SIHS90N65E-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.2 °C/W, measured from die to drain tab per JEDEC JESD51 standards. This low value enables high-power dissipation (>500 W) with minimal temperature rise when mounted on a properly sized heatsink using thermally conductive interface material. The SIHS90N65E-GE3 achieves this via copper clip bonding and optimized die attach in the SUPER-247 package.

Is SIHS90N65E-GE3 suitable for use in automotive on-board chargers (OBC)?

The SIHS90N65E-GE3 is not AEC-Q101 qualified and lacks automotive-specific qualification data (e.g., HTOL, UHAST, ESD). While its 650 V rating and 150 °C T_J range meet OBC voltage and thermal requirements, Vishay does not endorse SIHS90N65E-GE3 for automotive safety-critical applications. For OBC designs, use only AEC-Q101-qualified variants - the SIHS90N65E-GE3 is intended for industrial, telecom, and renewable energy systems.

SIHS90N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 591 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 11826 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 625W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHS90N65E-GE3 FAQ

1.How can I place an order for SIHS90N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHS90N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHS90N65E-GE3 reliable?

The price and inventory of SIHS90N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHS90N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHS90N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHS90N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHS90N65E-GE3?

SIHS90N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHS90N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHS90N65E-GE3?

For technical support, including SIHS90N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHS90N65E-GE3 requirements.

6.How does Aetrix verify that SIHS90N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHS90N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHS90N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHS90N65E-GE3?

All SIHS90N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHS90N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHS90N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHS90N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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