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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU2N80E-GE3

Name: SIHU2N80E-GE3
Brand: Vishay Siliconix
SKU: SIHU2N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU2N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU2N80E-GE3.pdf

Description:: MOSFET N-CH 800V 2.8A IPAK

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Product details

Overview

SIHU2N80E-GE3 from Vishay Siliconix is an 800 V, 2.8 A N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, featuring 2.38 Ω R_DS(on) at V_GS = 10 V, 9.8 nC typical total gate charge, and 14 mJ single-pulse avalanche energy - designed for high-voltage switching in PFC and SMPS stages of telecom and server power supplies.

For engineers reviewing the SIHU2N80E-GE3 datasheet, SIHU2N80E-GE3 pinout, SIHU2N80E-GE3 application, or SIHU2N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 2.0 °C/W), body diode recovery characteristics (t_rr = 278 ns), safe operating area limits, and real-world design implications for high-reliability 800 V power conversion.

Technical Context

This device employs a planar high-voltage silicon process optimized for low R_DS(on) × Q_g figure-of-merit (23.5 Ω·nC typ.), enabling reduced conduction and switching losses in hard-switched topologies. Its 800 V V_DS rating supports operation across full 400 V DC bus with margin, while the integral body diode exhibits controlled reverse recovery (Q_rr = 0.9 μC, I_RRM = 5 A).

The IPAK package provides low thermal resistance (R_thJC = 2.0 °C/W) and robust mechanical mounting for high-power density designs. Gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, and dV/dt immunity (70 V/ns at T_J = 125 °C) supports stable operation in noisy high-dv/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports 400 V DC bus with 100 % margin; enables use in universal-input PFC and offline SMPS without derating.
R_DS(on) max	2.75 Ω at 25 °C, V_GS = 10 V - Limits conduction loss to ≤ 7.6 W at 1.8 A continuous current (T_C = 100 °C).
Q_g typ	9.8 nC - Enables fast switching with low driver power demand; reduces gate drive loss in 100–300 kHz PFC stages.
E_AS	14 mJ - Rated unclamped inductive switching capability allows robust operation during transient overloads without external snubbers.
t_r/t_f	7/27 ns - Fast edge rates support high-frequency operation while minimizing overlap loss; requires careful PCB layout to control EMI.
R_thJC	2.0 °C/W - Enables 62.5 W power dissipation with ≤ 125 °C junction rise above case; suitable for heatsink-mounted high-power applications.
V_SD	1.2 V at I_S = 1 A - Low forward drop improves efficiency in synchronous rectification or freewheeling paths where body diode conducts.

Pinout & Package

IPAK (TO-251) package with isolated drain tab (pin 2), source (pin 1), and gate (pin 3) in standard three-terminal configuration. Thermal pad on drain side enables direct heatsink attachment; lead-free and halogen-free construction per JEDEC TO-251AA outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–10 V logic-level signal; input capacitance C_iss = 315 pF affects driver sizing and EMI filtering.
D	Drain	High-voltage power input/output node; electrically connected to thermal pad; must be isolated from heatsink unless floating design.
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	23.5 Ω·nC typ. - Directly reduces total switching + conduction loss in high-frequency PFC, improving system efficiency by ≥0.5 % at full load.
Avalanche-rated (UIS)	14 mJ single-pulse - Eliminates need for external clamping circuits in inductive load switching, simplifying board layout and BOM.
Fast body diode recovery	t_rr = 278 ns, Q_rr = 0.9 μC - Minimizes reverse recovery loss and associated voltage spikes in bridge-leg or synchronous rectifier applications.
High dV/dt immunity	70 V/ns at T_J = 125 °C - Prevents false turn-on in high-noise environments like motor drives or industrial inverters without added gate resistors.
Thermally enhanced IPAK	R_thJC = 2.0 °C/W - Allows 62.5 W dissipation with only 125 °C ΔT; supports compact heatsink designs in space-constrained server PSUs.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100–300 kHz with 400 V DC output from rectified AC line. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology; handles peak currents up to 5 A. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >96 % PFC efficiency at 1 kW; avalanche rating protects against line surge events.	Use Scenario: Primary-side switch in 48 V telecom rectifier with universal AC input and active hold-up. IC Role / Device Role / Timing Role: Main switching element in LLC resonant half-bridge; operates with ZVS at 300–500 kHz. Use Value: Fast t_r/t_f and low C_oss (20 pF) enable clean zero-voltage switching transitions; 800 V rating accommodates 380 V DC bus transients.
Solar PV Inverter DC-DC Stage	Industrial Battery Charger
Use Scenario: Isolated DC-DC stage stepping down 1000 V PV array voltage to 400 V intermediate bus. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; subjected to repetitive UIS stress during startup. Use Value: 14 mJ E_AS withstands repeated inductive turn-off events; low C_iss minimizes gate drive power in high-duty-cycle operation.	Use Scenario: High-voltage buck converter charging 48–96 V battery banks from 400 V DC supply in EV infrastructure. IC Role / Device Role / Timing Role: Synchronous rectifier or freewheeling switch; body diode conducts during dead-time intervals. Use Value: V_SD = 1.2 V and t_rr = 278 ns reduce freewheeling loss and EMI generation; R_thJC = 2.0 °C/W sustains 2.8 A continuous current with minimal heatsink.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100–300 kHz with 400 V DC output from rectified AC line.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology; handles peak currents up to 5 A.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >96 % PFC efficiency at 1 kW; avalanche rating protects against line surge events.

Use Scenario: Primary-side switch in 48 V telecom rectifier with universal AC input and active hold-up.

IC Role / Device Role / Timing Role: Main switching element in LLC resonant half-bridge; operates with ZVS at 300–500 kHz.

Use Value: Fast t_r/t_f and low C_oss (20 pF) enable clean zero-voltage switching transitions; 800 V rating accommodates 380 V DC bus transients.

Solar PV Inverter DC-DC Stage

Industrial Battery Charger

Use Scenario: Isolated DC-DC stage stepping down 1000 V PV array voltage to 400 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; subjected to repetitive UIS stress during startup.

Use Value: 14 mJ E_AS withstands repeated inductive turn-off events; low C_iss minimizes gate drive power in high-duty-cycle operation.

Use Scenario: High-voltage buck converter charging 48–96 V battery banks from 400 V DC supply in EV infrastructure.

IC Role / Device Role / Timing Role: Synchronous rectifier or freewheeling switch; body diode conducts during dead-time intervals.

Use Value: V_SD = 1.2 V and t_rr = 278 ns reduce freewheeling loss and EMI generation; R_thJC = 2.0 °C/W sustains 2.8 A continuous current with minimal heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2N80FL	R_DS(on) = 3.0 Ω (max), Q_g = 12 nC, same 800 V rating, TO-220 package	Higher conduction loss and slower switching; requires larger heatsink and gate driver	Prefer SIHU2N80E-GE3 for space-constrained or high-efficiency PFC where IPAK footprint and lower FOM matter.
IXTP2N80P	R_DS(on) = 2.8 Ω (max), Q_g = 10.5 nC, TO-220FP package, no avalanche rating	No UIS specification; higher thermal resistance (R_thJC = 3.0 °C/W); less robust under transient overload	SIHU2N80E-GE3 is preferred when unclamped inductive switching reliability is required in industrial or renewable energy systems.

Compared with STP2N80FL and IXTP2N80P, SIHU2N80E-GE3 delivers superior figure-of-merit (23.5 vs. ≥28 Ω·nC), lower thermal resistance (2.0 vs. ≥3.0 °C/W), and guaranteed avalanche capability - making it the optimal choice for high-reliability, high-density 800 V switching where efficiency, thermal performance, and ruggedness are jointly critical.

Availability

SIHU2N80E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHU2N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHU2N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switching in PFC, SMPS, and industrial power conversion where low R_DS(on) × Q_g and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for SIHU2N80E-GE3 at 100 °C case temperature?

The SIHU2N80E-GE3 supports 1.8 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating from the 2.8 A rating at 25 °C, based on a linear derating factor of 0.5 W/°C and R_thJC = 2.0 °C/W. Designers must ensure heatsinking maintains case temperature ≤ 100 °C to sustain this current in SIHU2N80E-GE3-based circuits.

Does SIHU2N80E-GE3 have avalanche capability, and how is it rated?

Yes, SIHU2N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 14 mJ, tested per standard conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 0.9 A). This rating confirms robustness against transient overloads without external protection, a key differentiator versus non-avalanche-rated 800 V MOSFETs like IXTP2N80P.

What is the gate threshold voltage range for SIHU2N80E-GE3, and why does it matter for drive circuit design?

The SIHU2N80E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide range means gate drivers must deliver ≥10 V to ensure full enhancement and minimize R_DS(on) variation across temperature and unit-to-unit spread. Using marginal gate voltages (e.g., 5 V) risks incomplete turn-on and excessive conduction loss - a critical consideration in SIHU2N80E-GE3-based PFC designs.

How does the body diode performance of SIHU2N80E-GE3 compare to standard MOSFETs in freewheeling applications?

The SIHU2N80E-GE3 body diode features t_rr = 278 ns (typ.) and Q_rr = 0.9 μC at I_F = 1 A, significantly faster than many 800 V MOSFETs. This reduces reverse recovery loss and associated voltage overshoot in buck or bridge-leg freewheeling paths. For SIHU2N80E-GE3 used in battery charger output stages, this translates to lower EMI and higher efficiency versus alternatives with t_rr > 400 ns.

Is SIHU2N80E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHU2N80E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per its ordering information and Vishay's package compliance documentation. The IPAK (TO-251) package meets JEDEC standards for thermal cycling and mechanical reliability under these conditions, ensuring robust assembly in SIHU2N80E-GE3-based production lines.

SIHU2N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.75Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.6 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU2N80E-GE3 FAQ

1.How can I place an order for SIHU2N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU2N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU2N80E-GE3 reliable?

The price and inventory of SIHU2N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU2N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU2N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU2N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU2N80E-GE3?

SIHU2N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU2N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU2N80E-GE3?

For technical support, including SIHU2N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU2N80E-GE3 requirements.

6.How does Aetrix verify that SIHU2N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU2N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU2N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU2N80E-GE3?

All SIHU2N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU2N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU2N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHU2N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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