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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU3N50DA-GE3

Name: SIHU3N50DA-GE3
Brand: Vishay Siliconix
SKU: SIHU3N50DA-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU3N50DA-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Long Leads, IPak, TO-251AB

Datasheet:: SIHU3N50DA-GE3.pdf

Description:: MOSFET N-CHANNEL 500V 3A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHU3N50DA-GE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel D Series Power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in SMPS and industrial motor drives with low Qg (12 nC max) and avalanche-rated ruggedness (9 mJ EAS).

For engineers reviewing the SIHU3N50DA-GE3 datasheet, SIHU3N50DA-GE3 pinout, SIHU3N50DA-GE3 application, or SIHU3N50DA-GE3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 1.8 °C/W), body diode recovery (t_rr = 285–570 ns), gate charge distribution (Q_gs = 2 nC, Q_gd = 3 nC), and real-world use context for high-reliability power conversion.

Technical Context

This MOSFET employs a planar high-voltage silicon process to achieve low area-specific R_DS(on) and reduced C_iss (177 pF typ.), enabling fast switching with minimized capacitive losses. Its integral body diode is rated for repetitive 3 A continuous source-drain current and exhibits controlled reverse recovery (Q_rr = 0.68–1.36 μC).

The device operates across –55 °C to +150 °C junction temperature range and supports unclamped inductive switching up to 5.5 A pulsed drain current. Its dV/dt immunity is specified at 24 V/ns (T_J = 125 °C), confirming robustness against voltage transients in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports primary-side switching in offline 400 V AC-input SMPS without derating.
R_DS(on) max @ 10 V	3.2 Ω - Enables efficient conduction at ≤1.5 A DC load with <1.1 W I²R loss at full rated current.
Q_g max	12 nC - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., 100 mA peak).
E_AS	9 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during inductive turn-off stress.
t_rr	285–570 ns - Predictable body diode recovery supports synchronous rectification and ZVS design margins.
R_thJC	1.8 °C/W - Enables 69 W power dissipation with modest heatsinking (e.g., 25 °C case → 135 °C junction).
I_D cont @ T_C = 100 °C	1.9 A - Defines usable DC current limit under typical PCB-mounted thermal conditions.

Pinout & Package

IPAK (TO-251) package with isolated drain tab; thermally enhanced plastic housing optimized for surface-mount assembly and manual soldering (peak 300 °C for 10 s). Drain connects directly to exposed metal tab on underside.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 3–4.5 V threshold, driven with ≤±30 V; low C_iss (177 pF) eases drive design.
D	Drain	Main high-side switching node; electrically connected to exposed metal tab; handles 500 V blocking and 5.5 A pulsed current.
S	Source	Power return path and gate reference; forms common node with body diode cathode; carries full load current and reverse recovery charge.

Key Features

Feature	Design Value
Low figure-of-merit (R_on × Q_g)	3.2 Ω × 12 nC = 38.4 Ω·nC - Balances conduction and switching loss for mid-power 50–200 W converters.
Avalanche energy rating (E_AS)	9 mJ - Validated unclamped inductive switching capability eliminates need for external snubbers in flyback/LLC primary switches.
High body diode ruggedness	Rated for 3 A continuous IS and 5.5 A pulsed ISM - Supports bidirectional current handling in half-bridge and synchronous rectifier roles.
Low input capacitance (C_iss)	177 pF typ. - Reduces Miller effect, improves noise immunity, and lowers gate drive power vs. comparable 500 V MOSFETs.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - Suitable for green manufacturing and export compliance.

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 100–300 W active-clamp forward or LLC resonant converter for 1U server PSU. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC bus to transformer primary. Use Value: 500 V rating accommodates 400 V DC bus with margin; 9 mJ EAS withstands leakage inductance spikes without failure.	Use Scenario: Upper-leg switch in 3-phase inverter stage driving 0.5–2 kW induction motors in HVAC or pump controls. IC Role / Device Role / Timing Role: Fast-turning N-channel switch in high-side position, synchronized with complementary low-side devices. Use Value: Low Q_g (12 nC) enables clean 20–50 kHz PWM edge control; t_rr consistency minimizes shoot-through risk during commutation.
Battery Charger	Plasma Display Power
Use Scenario: Switching element in isolated flyback or forward topology for universal-input (90–264 V AC) EVSE or industrial battery chargers. IC Role / Device Role / Timing Role: Main power switch regulating output voltage via duty cycle modulation in primary-side feedback loop. Use Value: R_DS(on) = 3.2 Ω ensures <1.1 W conduction loss at 1.5 A, supporting >90% efficiency in compact form factors.	Use Scenario: Sustaining or addressing switch in plasma display panel (PDP) X/Y driver modules requiring high-voltage, fast transient response. IC Role / Device Role / Timing Role: High-speed switching device managing sustain pulse generation and data line discharge in PDP column drivers. Use Value: 24 V/ns dV/dt rating ensures immunity to fast-rising sustain pulses; low C_oss (26 pF) reduces dynamic loss during 100+ kHz operation.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 100–300 W active-clamp forward or LLC resonant converter for 1U server PSU.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk DC bus to transformer primary.

Use Value: 500 V rating accommodates 400 V DC bus with margin; 9 mJ EAS withstands leakage inductance spikes without failure.

Use Scenario: Upper-leg switch in 3-phase inverter stage driving 0.5–2 kW induction motors in HVAC or pump controls.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch in high-side position, synchronized with complementary low-side devices.

Use Value: Low Q_g (12 nC) enables clean 20–50 kHz PWM edge control; t_rr consistency minimizes shoot-through risk during commutation.

Battery Charger

Plasma Display Power

Use Scenario: Switching element in isolated flyback or forward topology for universal-input (90–264 V AC) EVSE or industrial battery chargers.

IC Role / Device Role / Timing Role: Main power switch regulating output voltage via duty cycle modulation in primary-side feedback loop.

Use Value: R_DS(on) = 3.2 Ω ensures <1.1 W conduction loss at 1.5 A, supporting >90% efficiency in compact form factors.

Use Scenario: Sustaining or addressing switch in plasma display panel (PDP) X/Y driver modules requiring high-voltage, fast transient response.

IC Role / Device Role / Timing Role: High-speed switching device managing sustain pulse generation and data line discharge in PDP column drivers.

Use Value: 24 V/ns dV/dt rating ensures immunity to fast-rising sustain pulses; low C_oss (26 pF) reduces dynamic loss during 100+ kHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V, 4.5 Ω R_DS(on), 11 nC Q_g, TO-220FP package - higher R_DS(on), same voltage, lower Q_g, larger footprint.	Requires larger PCB area and different thermal interface; less suitable for space-constrained IPAK layouts.	Select when board layout allows TO-220FP mounting and slightly higher conduction loss is acceptable for cost reduction.
IRFBC40APBF	500 V, 2.2 Ω R_DS(on), 25 nC Q_g, TO-220 package - lower R_DS(on), higher Q_g, no avalanche rating specified.	Lacks EAS validation; unsuitable for unclamped inductive loads without external protection.	Prefer only in resistive or lightly inductive loads where avalanche stress is absent and lower conduction loss is critical.

Compared with STP3NK50ZFP and IRFBC40APBF, SIHU3N50DA-GE3 uniquely combines IPAK's compact thermal profile, verified 9 mJ avalanche capability, and balanced 3.2 Ω/12 nC trade-off-making it optimal for space-limited, high-reliability 500 V switching where both conduction efficiency and transient robustness matter.

Availability

SIHU3N50DA-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and battery chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHU3N50DA-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The D Series Power MOSFET product line targets high-efficiency, high-reliability switching in industrial, telecom, and consumer power systems-emphasizing low FOM, avalanche ruggedness, and thermally optimized packaging like IPAK.

FAQ

What is the maximum continuous drain current for SIHU3N50DA-GE3 at 100 °C case temperature?

The SIHU3N50DA-GE3 supports 1.9 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.0 A rating at 25 °C case temperature and must be validated with actual PCB layout and heatsinking in the target application.

Does SIHU3N50DA-GE3 have an avalanche energy rating, and what is its value?

Yes, SIHU3N50DA-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 9 mJ, tested under defined conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 2.8 A). This rating confirms ruggedness against inductive turn-off transients without external snubbing.

What is the gate threshold voltage range for SIHU3N50DA-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHU3N50DA-GE3 is specified from 3 V to 4.5 V at T_J = 25 °C. This range indicates reliable turn-on with standard 5 V or 10 V logic-level gate drivers, but designers must ensure gate drive voltage exceeds 4.5 V to guarantee full enhancement and minimal R_DS(on) across temperature and unit variation.

Can SIHU3N50DA-GE3 be used in synchronous rectification configurations?

No-SIHU3N50DA-GE3 is a standard N-channel enhancement-mode MOSFET with an integral body diode, not a dedicated synchronous rectifier. While its body diode supports freewheeling, its reverse recovery characteristics (t_rr = 285–570 ns, Q_rr = 0.68–1.36 μC) are not optimized for high-frequency synchronous rectification; dedicated SR controllers or logic-level Schottky alternatives are preferred for that role.

What is the thermal resistance from junction to case (R_thJC) for SIHU3N50DA-GE3, and why is it important?

The maximum junction-to-case thermal resistance (R_thJC) for SIHU3N50DA-GE3 is 1.8 °C/W. This low value reflects efficient heat transfer from the silicon die to the exposed drain tab, enabling high power dissipation (69 W) with minimal temperature rise-critical for maintaining reliability in enclosed or convection-cooled industrial power designs.

SIHU3N50DA-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Long Leads, IPak, TO-251AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 177 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU3N50DA-GE3 FAQ

1.How can I place an order for SIHU3N50DA-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU3N50DA-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU3N50DA-GE3 reliable?

The price and inventory of SIHU3N50DA-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU3N50DA-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU3N50DA-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU3N50DA-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU3N50DA-GE3?

SIHU3N50DA-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU3N50DA-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU3N50DA-GE3?

For technical support, including SIHU3N50DA-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU3N50DA-GE3 requirements.

6.How does Aetrix verify that SIHU3N50DA-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU3N50DA-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU3N50DA-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU3N50DA-GE3?

All SIHU3N50DA-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU3N50DA-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU3N50DA-GE3 part is unused and in its original packaging.

Return procedure for SIHU3N50DA-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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