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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU3N50D-E3

Name: SIHU3N50D-E3
Brand: Vishay Siliconix
SKU: SIHU3N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU3N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU3N50D-E3.pdf

Description:: MOSFET N-CH 500V 3A TO251AA

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Product details

Overview

SIHU3N50D-E3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in SMPS, induction heating, and motor drives with low gate charge (12 nC max) and avalanche-rated ruggedness (10.4 mJ).

For engineers reviewing the SIHU3N50D-E3 datasheet, SIHU3N50D-E3 pinout, SIHU3N50D-E3 application, or SIHU3N50D-E3 equivalent, this device supports stable high-voltage DC-DC conversion, offers fast switching (td(on) ≤ 24 ns), low R_DS(on) × Q_g figure-of-merit, and integrates a robust body diode with 293 ns reverse recovery time.

Technical Context

This MOSFET employs planar vertical DMOS technology with a single N-channel structure, rated for continuous drain current up to 3.0 A at T_C = 25 °C and pulsed current of 5.5 A. Its gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers while maintaining low leakage (≤1 μA at V_DS = 500 V).

The device features low input capacitance (C_iss = 175 pF typ.), energy-related output capacitance (C_o(er) = 21 pF), and fast dynamic switching parameters - including rise time ≤18 ns and fall time ≤26 ns - enabling efficient operation in hard-switched topologies above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on) max @ 10 V	3.2 Ω - enables low conduction loss at 1.5 A drain current in compact thermal designs
Q_g max	12 nC - reduces gate drive power and allows use of low-cost, low-current drivers
E_AS	10.4 mJ - provides unclamped inductive switching robustness for motor control and welding circuits
t_rr	293 ns - limits diode reverse recovery stress during hard commutation in bridge configurations
R_thJC	1.8 °C/W - enables high-power dissipation (69 W max) with minimal junction-to-case thermal resistance
V_GS(th)	3–5 V - ensures reliable turn-on with standard logic-level gate drive while avoiding spurious activation

Pinout & Package

IPAK (TO-251) package with exposed drain pad for thermal enhancement; 3-pin single-ended leadframe design with G-D-S terminal layout on bottom view.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±30 V rating and low-impedance drive to minimize switching losses
D	Drain	Main high-voltage power terminal; electrically connected to thermal pad for heatsinking
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.2 Ω × 12 nC = 38.4 Ω·nC - improves efficiency in high-frequency SMPS by balancing conduction and switching loss
Avalanche energy rating	10.4 mJ (single-pulse) - eliminates need for external snubbers in inductive load switching
Body diode ruggedness	Rated for repetitive IS = 3 A and I_SM = 12 A - supports freewheeling in half-bridge motor drives without secondary diodes
Low C_iss and C_oss	175 pF and 21 pF respectively - reduces capacitive gate drive loss and improves EMI behavior
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial environments

Applications

Server SMPS	Induction Heating
Use Scenario: Primary-side switch in 48 V–54 V input telecom rectifiers and ATX PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 3 A peak current with synchronous rectification support. Use Value: Low Q_g and fast switching reduce driver complexity and improve full-load efficiency beyond 92 %.	Use Scenario: Half-bridge inductor driver in domestic cooktops and industrial heating systems operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power stage with body diode conducting reverse current during dead-time commutation. Use Value: 293 ns t_rr and 10.4 mJ E_AS prevent diode-induced voltage spikes and ensure reliable ZVS transitions.
Motor Drives	Battery Chargers
Use Scenario: Inverter leg in 24–48 V BLDC controllers for power tools and HVAC fans. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode used for PWM-controlled phase current regulation. Use Value: 3.2 Ω R_DS(on) minimizes I²R loss at 3 A continuous, supporting >95 % thermal efficiency in sealed enclosures.	Use Scenario: Primary switch in flyback or LLC resonant chargers for EVSE and portable power banks. IC Role / Device Role / Timing Role: High-reliability HV MOSFET handling 500 V transients during AC line surges and no-load conditions. Use Value: 1.8 °C/W R_thJC enables direct mounting to metal chassis, eliminating need for thermal interface material in cost-sensitive designs.

Server SMPS

Induction Heating

Use Scenario: Primary-side switch in 48 V–54 V input telecom rectifiers and ATX PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 3 A peak current with synchronous rectification support.

Use Value: Low Q_g and fast switching reduce driver complexity and improve full-load efficiency beyond 92 %.

Use Scenario: Half-bridge inductor driver in domestic cooktops and industrial heating systems operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power stage with body diode conducting reverse current during dead-time commutation.

Use Value: 293 ns t_rr and 10.4 mJ E_AS prevent diode-induced voltage spikes and ensure reliable ZVS transitions.

Motor Drives

Battery Chargers

Use Scenario: Inverter leg in 24–48 V BLDC controllers for power tools and HVAC fans.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode used for PWM-controlled phase current regulation.

Use Value: 3.2 Ω R_DS(on) minimizes I²R loss at 3 A continuous, supporting >95 % thermal efficiency in sealed enclosures.

Use Scenario: Primary switch in flyback or LLC resonant chargers for EVSE and portable power banks.

IC Role / Device Role / Timing Role: High-reliability HV MOSFET handling 500 V transients during AC line surges and no-load conditions.

Use Value: 1.8 °C/W R_thJC enables direct mounting to metal chassis, eliminating need for thermal interface material in cost-sensitive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V, 4.5 Ω R_DS(on), 14 nC Q_g, TO-220FP package	Higher R_DS(on) and Q_g; larger footprint and higher R_thJA	Preferred where board space permits and lower gate drive strength is acceptable
IRFBC40APBF	500 V, 2.2 Ω R_DS(on), 25 nC Q_g, TO-220 package	Lower on-resistance but significantly higher gate charge and slower switching	Selected when conduction loss dominates over switching loss in <100 kHz applications

Compared with STP3NK50ZFP and IRFBC40APBF, SIHU3N50D-E3 delivers superior switching efficiency in compact IPAK layouts due to its optimized 3.2 Ω/12 nC balance, while maintaining identical 500 V rating and avalanche capability - making it ideal for thermally constrained, medium-frequency power stages.

Availability

SIHU3N50D-E3 is available at Aetrix Electronics and suitable for server SMPS, induction heating systems, and motor drives requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for SIHU3N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The D Series Power MOSFETs, including SIHU3N50D-E3, were engineered for high-voltage switching efficiency in SMPS, motor control, and induction heating - emphasizing low FOM, avalanche ruggedness, and thermal performance in compact packages.

FAQ

What is the maximum continuous drain current rating for SIHU3N50D-E3 at 100 °C case temperature?

The SIHU3N50D-E3 supports 1.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be validated against PCB copper area, heatsink interface, and ambient airflow in the final design. The SIHU3N50D-E3 maintains safe operation within its 69 W P_D limit when properly mounted.

Does SIHU3N50D-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHU3N50D-E3 is fully rated for single-pulse avalanche energy at 10.4 mJ, tested per JEDEC standard JESD24-1 with V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 3 A. This rating applies to unclamped inductive switching events and confirms the device's ability to absorb transient energy without failure - a critical feature for SIHU3N50D-E3 in motor drive and welding applications.

What is the gate threshold voltage range for SIHU3N50D-E3, and why does it matter for drive circuit design?

The SIHU3N50D-E3 has a V_GS(th) range of 3–5 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. This threshold window allows robust noise margin in industrial environments and simplifies level-shifting requirements in high-side configurations - a key design advantage for SIHU3N50D-E3 in noisy power systems.

Can SIHU3N50D-E3 be used in place of a logic-level MOSFET in 5 V gate drive applications?

No - SIHU3N50D-E3 is not a logic-level MOSFET; its minimum V_GS(th) is 3 V, but R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V gate drive, the device operates in weak inversion with significantly elevated on-resistance (>10 Ω), leading to excessive conduction loss. SIHU3N50D-E3 requires ≥10 V gate drive for full performance, unlike true logic-level parts such as SI2300DS.

What is the thermal resistance from junction to case (R_thJC) for SIHU3N50D-E3, and how does it impact heatsink selection?

The SIHU3N50D-E3 has a maximum R_thJC of 1.8 °C/W, measured from junction to the drain-connected thermal pad. This low value enables effective heat transfer to an external heatsink or PCB copper pour, allowing the SIHU3N50D-E3 to dissipate up to 69 W with modest thermal interface resistance. Designers should use soldered thermal pad attachment and avoid insulating layers between the IPAK drain tab and heatsink surface.

SIHU3N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU3N50D-E3 FAQ

1.How can I place an order for SIHU3N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU3N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU3N50D-E3 reliable?

The price and inventory of SIHU3N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU3N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHU3N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU3N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU3N50D-E3?

SIHU3N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU3N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU3N50D-E3?

For technical support, including SIHU3N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU3N50D-E3 requirements.

6.How does Aetrix verify that SIHU3N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHU3N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU3N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHU3N50D-E3?

All SIHU3N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU3N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU3N50D-E3 part is unused and in its original packaging.

Return procedure for SIHU3N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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