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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU3N50D-GE3

Name: SIHU3N50D-GE3
Brand: Vishay Siliconix
SKU: SIHU3N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU3N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU3N50D-GE3.pdf

Description:: MOSFET N-CH 500V 3A TO251

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHU3N50D-GE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel Power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in SMPS, induction heating, and motor drives with low Qg (12 nC) and rugged body diode performance.

For engineers reviewing the SIHU3N50D-GE3 datasheet, SIHU3N50D-GE3 pinout, SIHU3N50D-GE3 application, or SIHU3N50D-GE3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 1.8 °C/W), avalanche rating (E_AS = 10.4 mJ), gate charge profile, and real-world use context for high-reliability industrial power designs.

Technical Context

This device uses planar VDMOS technology with optimized cell pitch and trench-free structure to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ≤38.4 Ω·nC at V_GS = 10 V. Its 500 V V_DS rating supports operation up to 400 V DC bus with margin, and its 1.8 °C/W junction-to-case thermal resistance enables high-power dissipation in compact heatsinked layouts.

The integrated body diode is rated for repetitive I_S = 3 A and features t_rr = 293 ns with Q_rr = 0.74 μC at T_J = 25 °C - enabling efficient hard-switching in flyback and resonant topologies without external snubbing. The ±30 V V_GS rating ensures robust gate drive tolerance against transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link applications with 25 % voltage margin for surge and ringing
R_DS(on) max @ 25 °C	3.2 Ω @ V_GS = 10 V - defines conduction loss in continuous current mode (e.g., 1.5 A yields 7.2 W max P_cond)
Q_g max	12 nC - determines gate drive power and switching speed; enables <24 ns turn-off delay with 9.1 Ω R_g
E_AS single-pulse	10.4 mJ - qualifies unclamped inductive switching capability for reliable operation in relay/snubberless circuits
R_thJC max	1.8 °C/W - allows 69 W P_D dissipation with ≤124 °C ΔT across case-to-heatsink interface
I_D cont @ T_C = 100 °C	1.9 A - sets practical current limit under forced-air or moderate heatsinking conditions
V_GS(th)	3–5 V - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

IPAK (TO-251) package with isolated drain tab for direct heatsinking; thermally enhanced plastic body with 1.8 °C/W junction-to-case resistance. Pin assignment follows standard D-G-S order on lead frame: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤±30 V drive; input capacitance C_iss = 175 pF affects driver sizing
D	Drain terminal / thermal pad	Main high-voltage output node; electrically connected to exposed metal tab for low-inductance heatsinking
S	Source terminal	Reference node for gate drive and current sensing; ties to power ground in common-source configuration

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤38.4 Ω·nC - reduces combined conduction + switching losses in high-frequency SMPS (e.g., >100 kHz)
Avalanche-rated (UIS)	10.4 mJ single-pulse - eliminates need for external clamping in inductive load switching
High body diode ruggedness	t_rr = 293 ns, Q_rr = 0.74 μC - minimizes reverse recovery stress during commutation in half-bridge configurations
Low C_oss (21 pF)	Reduces capacitive turn-off loss and improves efficiency in ZVS/ZCS soft-switching topologies
Lead (Pb)-free & Halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C - suitable for consumer and industrial products requiring green compliance

Applications

Server SMPS	Induction Heating
Use Scenario: Primary-side switch in 500–800 W telecom rectifier modules operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switching element in active-clamp forward or LLC resonant converter. Use Value: 500 V rating and 10.4 mJ E_AS enable reliable operation under line surges and transformer leakage energy without snubber networks.	Use Scenario: Half-bridge inductor driver for 2–5 kW domestic induction cooktops. IC Role / Device Role / Timing Role: Fast-switching power switch handling 20–50 kHz square-wave excitation with high di/dt. Use Value: Low Q_g (12 nC) and fast t_f (≤26 ns) reduce gate drive losses and improve system efficiency above 92 %.
Motor Drives	Battery Chargers
Use Scenario: Inverter leg in 1–3 kW BLDC motor controllers for HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High-side/low-side switching transistor in 3-phase bridge with bootstrap gate drive. Use Value: Body diode t_rr = 293 ns and I_SM = 12 A pulsed rating support freewheeling without external diodes in 6-step commutation.	Use Scenario: Primary switch in 300–600 W offline battery chargers for e-bikes and power tools. IC Role / Device Role / Timing Role: Main switching FET in quasi-resonant flyback topology with 400 V DC bus. Use Value: R_thJC = 1.8 °C/W and 69 W P_D allow full-load operation with minimal heatsink volume in space-constrained enclosures.

Server SMPS

Induction Heating

Use Scenario: Primary-side switch in 500–800 W telecom rectifier modules operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element in active-clamp forward or LLC resonant converter.

Use Value: 500 V rating and 10.4 mJ E_AS enable reliable operation under line surges and transformer leakage energy without snubber networks.

Use Scenario: Half-bridge inductor driver for 2–5 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch handling 20–50 kHz square-wave excitation with high di/dt.

Use Value: Low Q_g (12 nC) and fast t_f (≤26 ns) reduce gate drive losses and improve system efficiency above 92 %.

Motor Drives

Battery Chargers

Use Scenario: Inverter leg in 1–3 kW BLDC motor controllers for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching transistor in 3-phase bridge with bootstrap gate drive.

Use Value: Body diode t_rr = 293 ns and I_SM = 12 A pulsed rating support freewheeling without external diodes in 6-step commutation.

Use Scenario: Primary switch in 300–600 W offline battery chargers for e-bikes and power tools.

IC Role / Device Role / Timing Role: Main switching FET in quasi-resonant flyback topology with 400 V DC bus.

Use Value: R_thJC = 1.8 °C/W and 69 W P_D allow full-load operation with minimal heatsink volume in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V, 4.5 Ω R_DS(on), 14 nC Q_g, TO-220FP package	Higher R_DS(on) and Q_g; larger footprint and higher R_thJC (2.5 °C/W)	Acceptable where board space permits and thermal budget allows 15–20 % higher conduction loss
IXTP3N50D	500 V, 3.5 Ω R_DS(on), 10 nC Q_g, TO-220 package	Lower Q_g but no halogen-free option; lacks UIS rating documentation	Preferred when gate drive efficiency is critical and RoHS/halogen compliance is not required

Compared with STP3NK50ZFP and IXTP3N50D, SIHU3N50D-GE3 offers superior thermal performance (1.8 vs. ≥2.5 °C/W), documented avalanche ruggedness, and full halogen-free compliance - making it optimal for compact, high-reliability industrial power stages where layout area and regulatory alignment are constrained.

Availability

SIHU3N50D-GE3 is available at Aetrix Electronics and suitable for server SMPS, induction heating systems, and motor drives requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.

Supply support for SIHU3N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIHU3N50D-GE3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage, medium-current switching in industrial and computing power supplies where efficiency, ruggedness, and thermal density are critical.

FAQ

What is the maximum continuous drain current for SIHU3N50D-GE3 at 100 °C case temperature?

The SIHU3N50D-GE3 supports 1.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal limits and assumes proper heatsinking. At T_C = 25 °C, the rating increases to 3.0 A. Designers must verify junction temperature using R_thJC = 1.8 °C/W and actual power dissipation to ensure safe operation within the -55 to +150 °C T_J range.

Does SIHU3N50D-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHU3N50D-GE3 is rated for 10.4 mJ single-pulse unclamped inductive switching (UIS) energy, per test condition: V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, I_AS = 3 A. This rating confirms ruggedness against transient overloads in inductive circuits such as motor drives and SMPS transformers, eliminating need for external clamping in many designs. Repetitive UIS is not specified.

What is the gate threshold voltage range for SIHU3N50D-GE3, and how does it affect drive compatibility?

The SIHU3N50D-GE3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at I_D = 250 μA, ensuring reliable turn-on with standard 5 V logic-level drivers and full enhancement with 10 V gate drive. This range avoids unintended conduction near 0 V while maintaining compatibility with microcontroller GPIOs and dedicated gate drivers like the UCC27531. It is not a logic-level MOSFET (which typically specifies V_GS(th) ≤ 2.5 V), so 3.3 V-only drive is not recommended.

How does the body diode performance of SIHU3N50D-GE3 compare to standard recovery diodes?

The SIHU3N50D-GE3 body diode delivers t_rr = 293 ns and Q_rr = 0.74 μC at T_J = 25 °C, IS = 1.5 A, dI/dt = 100 A/μs - significantly faster than general-purpose rectifiers but slower than dedicated ultrafast or SiC Schottky diodes. Its performance is sufficient for freewheeling in hard-switched topologies like flyback and half-bridge inverters, though synchronous rectification may be preferred for highest efficiency above 200 kHz.

Is SIHU3N50D-GE3 suitable for surface-mount assembly, and what are its soldering requirements?

Yes, SIHU3N50D-GE3 uses IPAK (TO-251) package compatible with surface-mount reflow processes. Per Vishay specification, peak solder temperature must not exceed 300 °C for 10 seconds. The exposed drain tab requires adequate copper area (per Application Note 826 guidelines) for thermal relief and mechanical anchoring. Reflow profiles must avoid thermal shock; preheat and soak zones should follow J-STD-020 standards for moisture sensitivity level (MSL) 1 devices.

SIHU3N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU3N50D-GE3 FAQ

1.How can I place an order for SIHU3N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU3N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU3N50D-GE3 reliable?

The price and inventory of SIHU3N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU3N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU3N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU3N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU3N50D-GE3?

SIHU3N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU3N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU3N50D-GE3?

For technical support, including SIHU3N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU3N50D-GE3 requirements.

6.How does Aetrix verify that SIHU3N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU3N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU3N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU3N50D-GE3?

All SIHU3N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU3N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU3N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHU3N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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