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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU4N80AE-GE3

Name: SIHU4N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHU4N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU4N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Long Leads, IPAK, TO-251AB

Datasheet:: SIHU4N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 4.3A IPAK

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Product details

Overview

SIHU4N80AE-GE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel high-voltage power MOSFET in IPAK (TO-251) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 56 mJ single-pulse avalanche energy - designed for primary-side switching in telecom and server SMPS.

For engineers reviewing the SIHU4N80AE-GE3 datasheet, SIHU4N80AE-GE3 pinout, SIHU4N80AE-GE3 application, or SIHU4N80AE-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 1.8 °C/W), diode recovery metrics (t_rr = 248 ns, Q_rr = 1.4 μC), and real-world use context in PFC and PV inverter stages.

Technical Context

This device employs a planar high-voltage silicon process optimized for low R_DS(on) × Q_g figure-of-merit (1.1 Ω × 16 nC typ.), enabling reduced conduction and switching losses in hard-switched topologies. Its 800 V V_DS rating supports 400 V DC bus designs with 100 V margin.

The integral body diode is rated for 4.4 A continuous source-drain current and exhibits controlled reverse recovery (t_rr = 248 ns, I_RRM = 9.2 A) under 100 A/μs di/dt - critical for ZVS-assisted flyback and LLC resonant converters where diode ringing must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 400 V DC-link applications with 100 % safety margin against transients
R_DS(on) max	1.27 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.3 W conduction loss at 2 A RMS in continuous conduction mode
Q_g max	32 nC - reduces gate drive power requirement and allows use of lower-power gate drivers (e.g., 1–2 W driver ICs)
E_AS	56 mJ - ensures robustness against unclamped inductive switching events in offline converters without snubber redesign
R_thJC	1.8 °C/W - enables 69 W power dissipation with ≤125 °C case temperature rise, supporting compact heatsink integration
t_rr	248 ns - limits voltage overshoot during body-diode commutation in bridge-leg configurations
I_D (T_C = 100 °C)	2.7 A - defines usable current capability in thermally constrained PCB-mount applications

Pinout & Package

SIHU4N80AE-GE3 uses the IPAK (TO-251AA) package with three leads: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed thermal pad on the underside of the package, requiring direct soldering to a large copper pour for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; requires ≥10 V for full enhancement; gate leakage <100 nA at ±20 V
D	High-voltage drain node	Connected to internal die backside and thermal pad; must be routed with clearance ≥2.5 mm for 800 V working voltage
S	Source reference and return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	17.6 Ω·nC (1.1 Ω × 16 nC typ.) - directly lowers combined switching + conduction loss in 100–300 kHz SMPS
Avalanche-rated	56 mJ single-pulse E_AS - eliminates need for external clamping in flyback transformer reset or relay coil suppression
Low C_iss	622 pF at V_DS = 100 V - reduces Miller-induced turn-on risk and eases gate drive stability in high-dV/dt environments
Controlled body diode	t_rr = 248 ns, Q_rr = 1.4 μC - minimizes voltage spikes and EMI during synchronous rectification or half-bridge freewheeling
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - suitable for industrial and telecom end-equipment

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in active clamp forward or asymmetrical half-bridge converter operating at 100–200 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling full input power; duty cycle modulated by PWM controller to regulate output voltage. Use Value: 800 V rating provides 100 V margin over 400 V bus; 1.27 Ω R_DS(on) limits conduction loss to <2.2 W at 4.3 A peak, reducing heatsink size by ~30 % vs. 1.8 Ω alternatives.	Use Scenario: DC-DC boost stage in string inverters, stepping up PV array voltage (600–1000 V) to intermediate bus before H-bridge inversion. IC Role / Device Role / Timing Role: Unidirectional high-side switch in non-isolated boost topology; operates in continuous conduction mode with fixed-frequency PWM. Use Value: 56 mJ E_AS withstands inductor energy dump during fault conditions; low Q_g (32 nC max) enables efficient gate driving at 50–100 kHz without excessive driver loss.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 3-phase BLDC motor drives for HVAC compressors, operating at 8–20 kHz with 300–600 V DC link. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter; commutates motor phase current with precise timing control. Use Value: Body diode t_rr = 248 ns prevents shoot-through during dead-time transitions; R_thJC = 1.8 °C/W allows direct mounting to aluminum chassis without thermal interface pads.	Use Scenario: Resonant switch in electronic fluorescent ballasts, driving LC tank at 25–60 kHz to ignite and regulate lamp current. IC Role / Device Role / Timing Role: Hard-switched resonant transistor; turns on/off at zero-current crossing to minimize stress and EMI. Use Value: Low C_iss (622 pF) and Cr_ss (5 pF) reduce capacitive loading on resonant tank, preserving frequency stability; 800 V rating accommodates 600 V lamp ignition surges.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in active clamp forward or asymmetrical half-bridge converter operating at 100–200 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling full input power; duty cycle modulated by PWM controller to regulate output voltage.

Use Value: 800 V rating provides 100 V margin over 400 V bus; 1.27 Ω R_DS(on) limits conduction loss to <2.2 W at 4.3 A peak, reducing heatsink size by ~30 % vs. 1.8 Ω alternatives.

Use Scenario: DC-DC boost stage in string inverters, stepping up PV array voltage (600–1000 V) to intermediate bus before H-bridge inversion.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in non-isolated boost topology; operates in continuous conduction mode with fixed-frequency PWM.

Use Value: 56 mJ E_AS withstands inductor energy dump during fault conditions; low Q_g (32 nC max) enables efficient gate driving at 50–100 kHz without excessive driver loss.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 3-phase BLDC motor drives for HVAC compressors, operating at 8–20 kHz with 300–600 V DC link.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter; commutates motor phase current with precise timing control.

Use Value: Body diode t_rr = 248 ns prevents shoot-through during dead-time transitions; R_thJC = 1.8 °C/W allows direct mounting to aluminum chassis without thermal interface pads.

Use Scenario: Resonant switch in electronic fluorescent ballasts, driving LC tank at 25–60 kHz to ignite and regulate lamp current.

IC Role / Device Role / Timing Role: Hard-switched resonant transistor; turns on/off at zero-current crossing to minimize stress and EMI.

Use Value: Low C_iss (622 pF) and Cr_ss (5 pF) reduce capacitive loading on resonant tank, preserving frequency stability; 800 V rating accommodates 600 V lamp ignition surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 3.7 A, R_DS(on) = 1.4 Ω, Q_g = 38 nC, TO-220FP package	Higher R_DS(on) and Q_g; larger footprint and higher R_thJC (2.5 °C/W)	Preferred when TO-220FP mechanical fit is required and 0.3 Ω higher on-resistance is acceptable for thermal budget
IXTP4N80P	800 V, 4.0 A, R_DS(on) = 1.3 Ω, Q_g = 28 nC, TO-220 package	Lower Q_g but higher R_DS(on); no avalanche rating (E_AS not specified)	Selected when gate drive power minimization is prioritized over transient ruggedness in well-clamped circuits

Compared with STP4NK80ZFP and IXTP4N80P, SIHU4N80AE-GE3 offers superior FOM (R_DS(on) × Q_g = 17.6 vs. 53.2 and 36.4), guaranteed avalanche capability, and smaller IPAK footprint - making it optimal for space-constrained, high-reliability 400 V bus applications where both efficiency and ruggedness are critical.

Availability

SIHU4N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHU4N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHU4N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for high-efficiency, high-reliability switching in telecom, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHU4N80AE-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHU4N80AE-GE3 is 2.7 A when the case temperature (T_C) is 100 °C. This derating reflects thermal limitations of the IPAK package and ensures junction temperature remains within the -55 °C to +150 °C operating range. At 25 °C case temperature, the rating increases to 4.3 A. Designers must verify thermal design using R_thJC = 1.8 °C/W and ambient conditions to avoid exceeding T_J = 150 °C in actual SIHU4N80AE-GE3 applications.

Does SIHU4N80AE-GE3 have avalanche capability, and how is it specified?

Yes, SIHU4N80AE-GE3 is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 56 mJ, tested under standardized conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.0 A. This rating confirms ruggedness against inductive energy dump during switching faults - a key reliability feature absent in many competing 800 V MOSFETs. The SIHU4N80AE-GE3 datasheet explicitly lists E_AS in Absolute Maximum Ratings, confirming its qualification for unclamped inductive switching.

What is the gate threshold voltage range for SIHU4N80AE-GE3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHU4N80AE-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates the minimum gate voltage needed to begin channel conduction. For reliable enhancement, V_GS must exceed 4.0 V - hence the recommended 10 V drive. Designers must ensure gate drivers deliver ≥10 V with sufficient current to charge 32 nC Q_g quickly, avoiding linear-mode operation that causes overheating. The SIHU4N80AE-GE3's V_GS(th) spread also informs noise immunity margins in high-dV/dt environments.

How does the body diode performance of SIHU4N80AE-GE3 compare to standard MOSFETs, and where is it most beneficial?

The SIHU4N80AE-GE3 features a characterized body diode with t_rr = 248 ns (typ.), Q_rr = 1.4 μC (typ.), and V_SD = 1.2 V (typ.) at I_S = 2 A and T_J = 25 °C. Compared to generic high-voltage MOSFETs, this represents controlled, predictable recovery behavior - essential in half-bridge and synchronous rectifier topologies where diode reverse recovery induces voltage spikes and EMI. It is most beneficial in resonant converters (e.g., LLC) and PFC boost stages where the body diode conducts during dead time or light-load conditions, and low Q_rr directly reduces switching loss and stress on the SIHU4N80AE-GE3 itself.

Is SIHU4N80AE-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHU4N80AE-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per Vishay's S17-1345-Rev. A specification. The device is marked "-GE3" indicating lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU. PCB layout must follow Vishay's recommended pad dimensions for IPAK (TO-251), including adequate thermal relief for the drain-connected thermal pad, to ensure void-free solder joints and optimal thermal performance in production SIHU4N80AE-GE3 assemblies.

SIHU4N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-251-3 Long Leads, IPAK, TO-251AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU4N80AE-GE3 FAQ

1.How can I place an order for SIHU4N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU4N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU4N80AE-GE3 reliable?

The price and inventory of SIHU4N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU4N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU4N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU4N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU4N80AE-GE3?

SIHU4N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU4N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU4N80AE-GE3?

For technical support, including SIHU4N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU4N80AE-GE3 requirements.

6.How does Aetrix verify that SIHU4N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU4N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU4N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU4N80AE-GE3?

All SIHU4N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU4N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU4N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHU4N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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