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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU4N80E-GE3

Name: SIHU4N80E-GE3
Brand: Vishay Siliconix
SKU: SIHU4N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU4N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Long Leads, IPAK, TO-251AB

Datasheet:: SIHU4N80E-GE3.pdf

Description:: MOSFET N-CH 800V 4.3A IPAK

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Product details

Overview

SIHU4N80E-GE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 56 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHU4N80E-GE3 datasheet, SIHU4N80E-GE3 pinout, SIHU4N80E-GE3 application, or SIHU4N80E-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-251 thermal performance for convection-cooled industrial SMPS designs.

Technical Context

This device employs a planar high-voltage silicon process optimized for fast switching with controlled dv/dt (70 V/ns at T_J = 125 °C) and low C_iss (622 pF), enabling efficient operation in hard-switched 480 V DC bus topologies. Its integral body diode supports synchronous rectification and inductive load handling.

The MOSFET delivers stable R_DS(on) over temperature (1.1 Ω typ. at 25 °C, normalized to 2.5× at 150 °C), supports 11 A pulsed drain current, and maintains safe operating area integrity up to 10 ms pulses at 25 °C case temperature - critical for welder and motor drive transient robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands 480 V DC bus with 1.67× voltage margin for surge and ringing in telecom/PFC applications
R_DS(on) max	1.27 Ω at 25 °C - Enables <1.3 W conduction loss at 2 A continuous drain current in TO-251 package
Q_g max	32 nC - Reduces gate drive power and enables use of low-current drivers in high-frequency (>100 kHz) SMPS
E_AS	56 mJ - Rated for unclamped inductive switching events without failure, supporting reliable operation in motor drives
C_iss	622 pF - Low input capacitance minimizes Miller effect and improves turn-on speed in high-dv/dt environments
T_J range	–55 to +150 °C - Supports extended ambient operation in enclosed industrial enclosures without derating penalties
R_thJC	1.8 °C/W - Enables 69 W power dissipation with modest heatsinking, suitable for board-level thermal management

Pinout & Package

SIHU4N80E-GE3 uses the IPAK (TO-251AA) package with three leads: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed metal tab for low-inductance, low-thermal-resistance mounting to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–30 V logic-level gate drive; requires 10 V for full enhancement; ±100 nA leakage at ±20 V ensures low standby power
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and must be electrically isolated from heatsink unless referenced to system ground
S	Source (return path)	Reference node for gate drive; carries return current and body diode forward current; used for current sensing in low-side configurations

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	35.2 Ω·nC - Balances conduction and switching losses for optimal efficiency in 65–300 kHz PFC and LLC converters
Avalanche-rated (UIS)	56 mJ single-pulse - Eliminates need for external snubbers in inductive switching circuits like welding inverters
Low C_iss and C_rss	622 pF / 5 pF - Minimizes Miller-induced shoot-through risk and improves gate drive stability in half-bridge configurations
Body diode t_rr	248 ns typical - Enables moderate-frequency freewheeling in non-synchronous buck or flyback topologies
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: High-efficiency 48 V output stage in 3 kW redundant AC/DC front-end modules. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in active clamp forward or phase-shifted full-bridge topology. Use Value: 800 V rating accommodates 380–400 V DC link with safety margin; low Q_g enables ZVS operation above 150 kHz.	Use Scenario: 48 V/50 A telecom rectifier with hold-up time >20 ms and efficiency >94 %. IC Role / Device Role / Timing Role: Switching element in boost-type power factor correction (PFC) pre-regulator stage. Use Value: 1.1 Ω R_DS(on) limits conduction loss to <2.2 W at 4.3 A; avalanche rating handles line surges without clamping.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg for transformerless topologies. Use Value: 70 V/ns dv/dt capability suppresses false triggering during fast voltage transitions; TO-251 package simplifies thermal layout.	Use Scenario: IGBT replacement in 1–3 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge driving induction motors up to 4 kW. Use Value: 11 A pulsed current and 56 mJ E_AS withstand motor stall and regenerative braking transients without failure.

Server Power Supply

Telecom Rectifier

Use Scenario: High-efficiency 48 V output stage in 3 kW redundant AC/DC front-end modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in active clamp forward or phase-shifted full-bridge topology.

Use Value: 800 V rating accommodates 380–400 V DC link with safety margin; low Q_g enables ZVS operation above 150 kHz.

Use Scenario: 48 V/50 A telecom rectifier with hold-up time >20 ms and efficiency >94 %.

IC Role / Device Role / Timing Role: Switching element in boost-type power factor correction (PFC) pre-regulator stage.

Use Value: 1.1 Ω R_DS(on) limits conduction loss to <2.2 W at 4.3 A; avalanche rating handles line surges without clamping.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg for transformerless topologies.

Use Value: 70 V/ns dv/dt capability suppresses false triggering during fast voltage transitions; TO-251 package simplifies thermal layout.

Use Scenario: IGBT replacement in 1–3 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge driving induction motors up to 4 kW.

Use Value: 11 A pulsed current and 56 mJ E_AS withstand motor stall and regenerative braking transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Lower current rating and higher R_DS(on); lacks avalanche rating documentation	Preferred where lower gate charge is prioritized over current headroom and avalanche robustness is not required
IXTP4N80P	800 V, 4 A, R_DS(on) = 1.3 Ω, Q_g = 28 nC, TO-220 package	Higher R_DS(on), no specified E_AS, larger footprint than IPAK	Selected when legacy TO-220 layout compatibility is mandatory and thermal budget allows higher conduction loss

Compared with STP4NK80ZFP and IXTP4N80P, SIHU4N80E-GE3 offers superior avalanche ruggedness, lower on-resistance in a smaller IPAK package, and tighter Q_g/R_DS(on) trade-off - making it optimal for space-constrained, high-reliability PFC and industrial inverter designs.

Availability

SIHU4N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing sites.

Supply support for SIHU4N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SIHU4N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, medium-current switching in industrial and communications power systems where efficiency, avalanche capability, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for SIHU4N80E-GE3 at 100 °C case temperature?

The SIHU4N80E-GE3 supports 2.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package and ensures junction temperature remains within the –55 to +150 °C operational range under sustained load conditions.

Does SIHU4N80E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHU4N80E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 56 mJ. Testing follows standard JEDEC methodology: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.0 A - confirming ruggedness for real-world inductive transients.

What is the gate threshold voltage range for SIHU4N80E-GE3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHU4N80E-GE3 is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage - critical for stable operation in high-noise industrial environments.

Can SIHU4N80E-GE3 be used in surface-mount PCB layouts, and what are the recommended pad dimensions?

SIHU4N80E-GE3 uses the through-hole IPAK (TO-251) package and is not designed for SMT reflow. It requires plated-through holes and mechanical mounting to a heatsink. Vishay recommends minimum pad dimensions per Application Note 826 for DPAK - but those do not apply; TO-251 requires hole-based mounting with thermal via patterns under the drain tab for optimal heat transfer.

How does the body diode performance of SIHU4N80E-GE3 compare to fast recovery diodes in freewheeling applications?

The SIHU4N80E-GE3 body diode has t_rr = 248 ns (typ.) and Q_rr = 1.4 μC at T_J = 25 °C, IS = 2 A, and di/dt = 100 A/μs. While slower than dedicated ultrafast diodes, it is sufficient for <100 kHz freewheeling in non-synchronous topologies - but synchronous rectification is preferred for higher efficiency above 50 kHz.

SIHU4N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-251-3 Long Leads, IPAK, TO-251AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU4N80E-GE3 FAQ

1.How can I place an order for SIHU4N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU4N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU4N80E-GE3 reliable?

The price and inventory of SIHU4N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU4N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU4N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU4N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU4N80E-GE3?

SIHU4N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU4N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU4N80E-GE3?

For technical support, including SIHU4N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU4N80E-GE3 requirements.

6.How does Aetrix verify that SIHU4N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU4N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU4N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU4N80E-GE3?

All SIHU4N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU4N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU4N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHU4N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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