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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU5N50D-E3

Name: SIHU5N50D-E3
Brand: Vishay Siliconix
SKU: SIHU5N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU5N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU5N50D-E3.pdf

Description:: MOSFET N-CH 500V 5.3A TO251AA

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Product details

Overview

SIHU5N50D-E3 from Vishay Siliconix is a 500 V, 5.3 A N-channel power MOSFET in IPAK (TO-251) package, featuring 1.5 Ω max R_DS(on) at V_GS = 10 V, 20 nC max total gate charge, and 28.8 mJ single-pulse avalanche energy-designed for high-efficiency switching in server SMPS and industrial motor drives.

For engineers reviewing the SIHU5N50D-E3 datasheet, SIHU5N50D-E3 pinout, SIHU5N50D-E3 application, or SIHU5N50D-E3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.2 °C/W), body diode recovery metrics (t_rr = 320 ns, Q_rr = 1.2 μC), and real-world design implications for hard-switched topologies.

Technical Context

This device implements a planar high-voltage DMOS structure optimized for low figure-of-merit (R_DS(on) × Q_g = 30 Ω·nC typ), fast switching (t_d(on) = 12–24 ns, t_f = 11–22 ns), and rugged unclamped inductive switching capability (E_AS = 28.8 mJ). Its gate threshold voltage range (3–5 V) ensures stable turn-on under standard 10 V drive.

The integrated body diode supports bidirectional current flow with V_SD = 1.2 V at I_S = 4 A and exhibits controlled reverse recovery (I_RRM = 8 A, dV/dt rating of 0.28 V/ns), enabling reliable operation in freewheeling and synchronous rectification roles without external snubbing in moderate-frequency designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in telecom/server PSUs
R_DS(on) max	1.5 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.9 W conduction loss at 5.3 A continuous drain current
Q_g max	20 nC - determines gate driver current requirement (~2 mA avg. at 100 kHz, 10 V swing)
E_AS	28.8 mJ - withstands unclamped inductive energy during fault conditions without failure
t_r/t_f	11–22 ns - reduces switching transition time, lowering overlap losses in hard-switched converters
R_thJC	1.2 °C/W - allows 104 W power dissipation with ≤125 °C case-to-junction rise, critical for compact heatsink layouts
Q_rr	1.2 μC - quantifies stored charge in body diode; directly impacts turn-on loss of synchronous FETs in LLC or phase-shifted topologies

Pinout & Package

SIHU5N50D-E3 uses the IPAK (TO-251AA) package with exposed drain pad on the underside for thermal conduction. The three-terminal configuration places Gate (G), Drain (D), and Source (S) on leads 1, 2, and 3 respectively, matching JEDEC TO-251AA mechanical outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Lead 1)	Gate control input	Receives 10 V logic-level drive; requires <100 nA leakage current handling and 1.7 Ω gate input resistance at 1 MHz
D (Lead 2)	Drain connection / thermal path	High-side switch node; electrically connected to molded plastic backside thermal pad-must be soldered to PCB copper for R_thJC = 1.2 °C/W
S (Lead 3)	Source reference / return path	Common source node for gate drive and load current return; ties to power ground plane with minimal inductance to suppress ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30 Ω·nC typical - improves efficiency in 100–500 kHz SMPS by reducing combined conduction + switching loss
Avalanche-rated (UIS)	28.8 mJ single-pulse - eliminates need for external clamping in inductive load switching applications like motor gate drivers
Body diode ruggedness	t_rr = 320 ns, Q_rr = 1.2 μC - enables reliable freewheeling in flyback and forward converters without oscillation or shoot-through risk
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in high-noise environments such as welding inverters or induction heaters
Lead (Pb)-free & halogen-free option	SiHU5N50D-E3 complies with RoHS Directive 2011/65/EU and Vishay's material declaration standard 99912

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz, handling 500 V DC input and delivering 12 V/80 A output. Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.9 W, while 20 nC Q_g enables clean 10 V gate drive with low-power IC driver (e.g., UCC27531).	Use Scenario: Half-bridge leg in 20 kHz resonant tank driver for domestic induction cooktops. IC Role / Device Role / Timing Role: Fast-switching power switch controlling LC resonance; subjected to repetitive 600 V transient spikes and high di/dt. Use Value: 28.8 mJ E_AS rating absorbs energy from parasitic inductance during dead-time commutation, preventing avalanche-induced failure.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: Inverter output stage in 3 kW brushless DC motor controller for HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, conducting up to 5 A RMS with 10 A peak surge. Use Value: Body diode V_SD = 1.2 V at 4 A minimizes freewheeling loss during PWM off-time, improving thermal margin over Schottky alternatives.	Use Scenario: Synchronous rectifier in secondary-side of 300 W GaN-based USB-PD 3.1 charger. IC Role / Device Role / Timing Role: Controlled rectifier replacing diode in LLC resonant converter, turned on/off in sync with primary switches. Use Value: Q_rr = 1.2 μC ensures predictable turn-on timing and avoids cross-conduction when paired with TI UCC24612 controller.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz, handling 500 V DC input and delivering 12 V/80 A output.

Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.9 W, while 20 nC Q_g enables clean 10 V gate drive with low-power IC driver (e.g., UCC27531).

Use Scenario: Half-bridge leg in 20 kHz resonant tank driver for domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch controlling LC resonance; subjected to repetitive 600 V transient spikes and high di/dt.

Use Value: 28.8 mJ E_AS rating absorbs energy from parasitic inductance during dead-time commutation, preventing avalanche-induced failure.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: Inverter output stage in 3 kW brushless DC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, conducting up to 5 A RMS with 10 A peak surge.

Use Value: Body diode V_SD = 1.2 V at 4 A minimizes freewheeling loss during PWM off-time, improving thermal margin over Schottky alternatives.

Use Scenario: Synchronous rectifier in secondary-side of 300 W GaN-based USB-PD 3.1 charger.

IC Role / Device Role / Timing Role: Controlled rectifier replacing diode in LLC resonant converter, turned on/off in sync with primary switches.

Use Value: Q_rr = 1.2 μC ensures predictable turn-on timing and avoids cross-conduction when paired with TI UCC24612 controller.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.6 Ω, Q_g = 22 nC, TO-220FP package	Higher R_DS(on) and larger footprint; lacks specified E_AS rating	Acceptable where space permits TO-220FP and avalanche robustness is not required
IRFBC40APBF	500 V, 6.2 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220 package	Lower R_DS(on) but higher Q_g; no documented body diode Q_rr or t_rr	Preferred for lower conduction loss in <100 kHz designs, but requires stronger gate drive and lacks SIHU5N50D-E3's diode recovery data

Compared with STP5NK50ZFP and IRFBC40APBF, SIHU5N50D-E3 offers superior balance of low Q_g, verified body diode recovery, and compact IPAK thermal performance-making it optimal for space-constrained, medium-frequency SMPS where both efficiency and reliability are prioritized.

Availability

SIHU5N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SIHU5N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power systems.

The D Series Power MOSFETs-including SIHU5N50D-E3-are engineered for high-efficiency switching in hard-switched and resonant topologies, emphasizing low FOM, avalanche ruggedness, and consistent body diode performance across temperature.

FAQ

What is the maximum continuous drain current for SIHU5N50D-E3 at 100 °C case temperature?

The maximum continuous drain current for SIHU5N50D-E3 is 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package and must be validated against actual board layout, copper area, and ambient airflow in the final design. SIHU5N50D-E3 maintains safe operation within its SOA curve up to this current level when properly heatsinked.

Does SIHU5N50D-E3 have a fully characterized body diode for synchronous rectification?

Yes, SIHU5N50D-E3 provides full body diode specifications including V_SD = 1.2 V at I_S = 4 A, t_rr = 320 ns, Q_rr = 1.2 μC, and I_RRM = 8 A. These parameters are measured per JEDEC standards and enable accurate loss modeling in synchronous rectifier applications-unlike many MOSFETs that omit Q_rr or t_rr data. SIHU5N50D-E3's diode behavior is stable across temperature and repeatable in production lots.

What is the gate threshold voltage range for SIHU5N50D-E3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHU5N50D-E3 is specified from 3 V to 5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Because SIHU5N50D-E3 is not a logic-level device, it requires ≥8 V to achieve rated R_DS(on); using 5 V drive results in significantly higher on-resistance and conduction loss. SIHU5N50D-E3 thus pairs best with dedicated gate drivers-not microcontroller GPIO alone.

Can SIHU5N50D-E3 replace older TO-220 MOSFETs in existing designs without PCB changes?

No, SIHU5N50D-E3 uses the IPAK (TO-251) package with different lead spacing, thermal pad layout, and mounting geometry than TO-220 devices. Its drain-connected thermal pad requires dedicated PCB copper area and stencil-defined solder paste-unlike TO-220's isolated tab. Direct replacement would require redesign of footprint, thermal vias, and gate routing. SIHU5N50D-E3 is intended for new compact designs, not drop-in upgrades.

What is the significance of the 24 V/ns dV/dt rating for SIHU5N50D-E3?

The 24 V/ns dV/dt rating for SIHU5N50D-E3-measured at T_J = 125 °C-indicates its immunity to false turn-on caused by rapid voltage transients across drain-source. This spec is critical in noisy environments like welding equipment or motor drives, where parasitic coupling could otherwise trigger unintended conduction. SIHU5N50D-E3's internal cell layout and gate oxide design ensure stable operation even under these stresses, eliminating need for external Miller clamps in most applications.

SIHU5N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU5N50D-E3 FAQ

1.How can I place an order for SIHU5N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU5N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU5N50D-E3 reliable?

The price and inventory of SIHU5N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU5N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHU5N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU5N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU5N50D-E3?

SIHU5N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU5N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU5N50D-E3?

For technical support, including SIHU5N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU5N50D-E3 requirements.

6.How does Aetrix verify that SIHU5N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHU5N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU5N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHU5N50D-E3?

All SIHU5N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU5N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU5N50D-E3 part is unused and in its original packaging.

Return procedure for SIHU5N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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