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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU5N50D-GE3

Name: SIHU5N50D-GE3
Brand: Vishay Siliconix
SKU: SIHU5N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU5N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU5N50D-GE3.pdf

Description:: MOSFET N-CH 500V 5.3A TO251

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Product details

Overview

SIHU5N50D-GE3 from Vishay Siliconix is a 500 V, 5.3 A N-channel power MOSFET in IPAK (TO-251) package, featuring 1.5 Ω max R_DS(on) at V_GS = 10 V, 20 nC max total gate charge, and 28.8 mJ single-pulse avalanche energy - designed for high-voltage switching in server SMPS and industrial motor drives.

For engineers reviewing the SIHU5N50D-GE3 datasheet, SIHU5N50D-GE3 pinout, SIHU5N50D-GE3 application, or SIHU5N50D-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, body diode recovery metrics, and real-world use context for reliable high-voltage power stage design.

Technical Context

This device employs a planar high-voltage trench-enhanced structure optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling efficient hard-switching in 400–500 V DC-link topologies. Its 1.2 Ω/W junction-to-case thermal resistance supports high-power density layouts with minimal heatsinking.

The integrated body diode is rated for 5 A continuous reverse conduction and exhibits 320 ns typical reverse recovery time (t_rr) at 2.5 A/100 A/μs, making it suitable for freewheeling and synchronous rectification roles where diode ruggedness matters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V nominal DC bus with 25 % margin for voltage transients in telecom/server PSUs
R_DS(on) max	1.5 Ω at V_GS = 10 V - enables <5 W conduction loss at 5.3 A, critical for thermally constrained IPAK footprint
Q_g max	20 nC - determines gate drive power and switching speed; compatible with standard 10 V logic-level drivers
E_AS	28.8 mJ - ensures robustness against unclamped inductive switching events in motor drive and welding circuits
R_thJC	1.2 °C/W - allows direct mounting to heatsink; enables >80 W dissipation with 100 °C ΔT across junction-to-case path
t_rr	320 ns - defines minimum dead-time requirement in half-bridge configurations to prevent shoot-through
I_D cont @ T_C = 100 °C	3.4 A - sets practical current limit under sustained high-temperature operation in enclosed industrial enclosures

Pinout & Package

IPAK (TO-251) package with exposed drain pad on underside for thermal conduction; 3-pin single-sided leaded outline conforming to JEDEC TO-251AA.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±30 V drive; input capacitance C_iss = 325 pF affects driver sizing
D	Drain	Main high-side switching node; electrically connected to thermal pad; handles full 500 V blocking and avalanche stress
S	Source	Power return reference; ties to PCB ground plane; body diode anode connects internally to S terminal

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤30 Ω·nC - reduces combined conduction + switching losses in 100–500 kHz SMPS designs
Avalanche-rated (UIS)	28.8 mJ - eliminates need for external snubbers in inductive load switching applications like welders
High body diode ruggedness	Rated for 5 A continuous reverse current and 20 A pulsed - supports bidirectional energy flow in H-bridge motor control
Low C_oss (34 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant converters
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material policy - suitable for export-controlled industrial systems

Applications

Server Power Supplies	Industrial Motor Drives
Use Scenario: Primary-side switching in 48 V–54 V input, 12 V/200 W isolated DC-DC modules for rack-mounted servers. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active-clamp forward or LLC half-bridge topology. Use Value: 500 V rating accommodates 400 V DC bus with margin; 1.5 Ω R_DS(on) limits conduction loss to <4 W at full load.	Use Scenario: Low-side switch in 3-phase IGBT gate driver auxiliary supply or brake chopper circuit. IC Role / Device Role / Timing Role: Fast-switching freewheeling device handling regenerative energy during motor deceleration. Use Value: 320 ns t_rr and 8 A I_RRM ensure clean commutation without voltage overshoot or cross-conduction risk.
Induction Heating Systems	Battery Chargers (EV/Industrial)
Use Scenario: Resonant tank switching element in 20–100 kHz series-resonant inverters for domestic cooktops and industrial heating coils. IC Role / Device Role / Timing Role: Hard-switched power switch operating near zero-voltage switching (ZVS) boundary. Use Value: 28.8 mJ E_AS withstands repeated overvoltage spikes during ZVS transition failures; 1.2 °C/W R_thJC sustains 90 °C case temperature.	Use Scenario: Secondary-side synchronous rectifier in 400–800 V output AC/DC chargers for electric forklifts and energy storage systems. IC Role / Device Role / Timing Role: Body diode conduction during dead-time; controlled switching during active rectification phase. Use Value: 1.2 V V_SD at 4 A reduces forward loss vs. Schottky alternatives; 5 A IS rating supports peak charging currents up to 10 A.

Server Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switching in 48 V–54 V input, 12 V/200 W isolated DC-DC modules for rack-mounted servers.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active-clamp forward or LLC half-bridge topology.

Use Value: 500 V rating accommodates 400 V DC bus with margin; 1.5 Ω R_DS(on) limits conduction loss to <4 W at full load.

Use Scenario: Low-side switch in 3-phase IGBT gate driver auxiliary supply or brake chopper circuit.

IC Role / Device Role / Timing Role: Fast-switching freewheeling device handling regenerative energy during motor deceleration.

Use Value: 320 ns t_rr and 8 A I_RRM ensure clean commutation without voltage overshoot or cross-conduction risk.

Induction Heating Systems

Battery Chargers (EV/Industrial)

Use Scenario: Resonant tank switching element in 20–100 kHz series-resonant inverters for domestic cooktops and industrial heating coils.

IC Role / Device Role / Timing Role: Hard-switched power switch operating near zero-voltage switching (ZVS) boundary.

Use Value: 28.8 mJ E_AS withstands repeated overvoltage spikes during ZVS transition failures; 1.2 °C/W R_thJC sustains 90 °C case temperature.

Use Scenario: Secondary-side synchronous rectifier in 400–800 V output AC/DC chargers for electric forklifts and energy storage systems.

IC Role / Device Role / Timing Role: Body diode conduction during dead-time; controlled switching during active rectification phase.

Use Value: 1.2 V V_SD at 4 A reduces forward loss vs. Schottky alternatives; 5 A IS rating supports peak charging currents up to 10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.6 Ω, Q_g = 22 nC, TO-220FP package	Higher R_DS(on) and larger thermal resistance (R_thJC = 2.5 °C/W) limit power density	Preferred where board space permits TO-220FP and lower cost is prioritized over thermal performance
IRFBC40APBF	500 V, 5.4 A, R_DS(on) = 1.4 Ω, Q_g = 27 nC, TO-220 package	Higher Q_g increases gate drive loss; no avalanche rating specified in datasheet	Acceptable for non-avalanche-critical linear or soft-switching applications with ample gate drive capability

Compared with STP5NK50ZFP and IRFBC40APBF, SIHU5N50D-GE3 offers superior thermal performance (1.2 vs. ≥2.5 °C/W), verified avalanche capability, and lower Q_g, making it optimal for compact, high-reliability 500 V switching stages where layout area and transient robustness are constrained.

Availability

SIHU5N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHU5N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The D Series power MOSFETs, including SIHU5N50D-GE3, were engineered for high-efficiency, high-reliability switching in 400–600 V industrial and computing power systems - emphasizing low FOM, avalanche ruggedness, and thermal efficiency in compact packages.

FAQ

What is the maximum continuous drain current for SIHU5N50D-GE3 at 100 °C case temperature?

The SIHU5N50D-GE3 supports 3.4 A continuous drain current when the case temperature (T_C) is maintained at 100 °C. This value is derated from the 5.3 A rating at 25 °C using the linear derating factor of 0.83 W/°C, reflecting its thermal limit in real-world heatsink-mounted conditions. The SIHU5N50D-GE3 must be mounted to a thermally adequate surface to sustain this current without exceeding 150 °C junction temperature.

Does SIHU5N50D-GE3 have avalanche energy rating, and what is its value?

Yes, the SIHU5N50D-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 28.8 mJ under standardized test conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 5 A). This specification confirms the SIHU5N50D-GE3 can safely absorb inductive energy without failure - a key requirement in motor drive and welding applications where flyback voltage spikes occur.

What is the gate threshold voltage range for SIHU5N50D-GE3, and how does it affect drive requirements?

The SIHU5N50D-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C and I_D = 250 μA. This means the SIHU5N50D-GE3 begins conducting significantly above 3 V but achieves full enhancement only near 10 V. To ensure low R_DS(on) and minimize conduction loss, the SIHU5N50D-GE3 must be driven with ≥10 V gate voltage - confirming compatibility with standard logic-level gate drivers, not 5 V-only controllers.

How does the body diode performance of SIHU5N50D-GE3 compare to external Schottky diodes in synchronous rectification?

The SIHU5N50D-GE3 body diode exhibits a forward voltage (V_SD) of ≤1.2 V at 4 A and 25 °C, with 320 ns reverse recovery time (t_rr) and 1.2 μC reverse recovery charge (Q_rr). While higher V_F than Schottky diodes, its monolithic integration eliminates layout parasitics and enables precise timing control in synchronous rectification. For moderate-frequency (<100 kHz), medium-current applications, the SIHU5N50D-GE3 body diode provides acceptable efficiency without added component count - unlike discrete Schottkys which require separate placement and routing.

Is SIHU5N50D-GE3 suitable for use in automotive applications?

No, the SIHU5N50D-GE3 is not qualified to AEC-Q101 or automotive-grade reliability standards. Its datasheet specifies operation from −55 °C to +150 °C, but Vishay does not list automotive qualification, PPAP documentation, or extended lifetime testing for the SIHU5N50D-GE3. It is intended for industrial, computing, and consumer power applications. For automotive use, engineers should select explicitly AEC-Q101 qualified equivalents such as Vishay's SQ-series or ST's STD-series MOSFETs instead of the SIHU5N50D-GE3.

SIHU5N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU5N50D-GE3 FAQ

1.How can I place an order for SIHU5N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU5N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU5N50D-GE3 reliable?

The price and inventory of SIHU5N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU5N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU5N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU5N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU5N50D-GE3?

SIHU5N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU5N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU5N50D-GE3?

For technical support, including SIHU5N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU5N50D-GE3 requirements.

6.How does Aetrix verify that SIHU5N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU5N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU5N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU5N50D-GE3?

All SIHU5N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU5N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU5N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHU5N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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