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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU5N80AE-GE3

Name: SIHU5N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHU5N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU5N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU5N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 4.4A TO251AA

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Product details

Overview

SIHU5N80AE-GE3 from Vishay Siliconix is an 800 V, 4.4 A N-channel power MOSFET in IPAK (TO-251) package, featuring R_DS(on) = 1.17 Ω at V_GS = 10 V, Q_g = 11–16.5 nC, and avalanche-rated (E_AS = 17 mJ). It delivers low conduction and switching losses for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHU5N80AE-GE3 datasheet, SIHU5N80AE-GE3 pinout, SIHU5N80AE-GE3 application, or SIHU5N80AE-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 2 °C/W), body diode recovery specs (t_rr = 267–534 ns), and real-world design context for high-reliability 800 V switching.

Technical Context

This device uses a high-voltage planar silicon process optimized for rugged unclamped inductive switching (UIS), with integrated Zener-protected gate and low effective output capacitance (C_oss = 20 pF, C_o(er) = 14 pF). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under wide temperature ranges (T_J = –55 to +150 °C).

The MOSFET supports fast switching with t_d(on) = 12–24 ns and t_f = 28–56 ns at V_DD = 640 V, ID = 2 A, and R_g = 9.1 Ω. Its reverse diode exhibits V_SD = 1.2 V at I_S = 2 A and t_rr = 267–534 ns, enabling efficient freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports primary-side switching in 400 V AC-input PFC and telecom rectified bus applications
R_DS(on) typ	1.17 Ω at V_GS = 10 V - Enables <4.4 A continuous conduction with ≤5.2 W conduction loss at T_C = 25 °C
Q_g max	16.5 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers
E_AS	17 mJ - Guarantees robustness against single-pulse inductive energy transients without failure
R_thJC	2 °C/W - Allows direct heatsink mounting for high-power density thermal management
t_rr	267–534 ns - Limits diode reverse recovery stress and EMI generation during hard commutation
I_D cont	4.4 A at T_C = 25 °C - Rated for sustained operation in compact 62.5 W power stages

Pinout & Package

IPAK (TO-251) package with exposed drain pad for thermal and electrical connection; three-terminal through-hole outline with G–D–S pin sequence (viewed from front, leads down).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤±30 V bias; low input capacitance (C_iss = 321 pF) minimizes driver loading
D	Drain	Main high-voltage current path; connected to exposed thermal pad for low R_thJC = 2 °C/W
S	Source	Reference node for gate drive and current sensing; ties to power ground in common-source configuration

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	~19.3 Ω·nC - Balances conduction efficiency and switching speed for 65–100 kHz PFC designs
Avalanche energy rating	E_AS = 17 mJ - Eliminates need for external snubbers in inductive load switching
Integrated Zener ESD protection	Rated per HBM ≥2 kV - Protects gate oxide during board handling and assembly without external clamps
Low effective C_oss	C_o(er) = 14 pF - Reduces capacitive turn-off loss and improves light-load efficiency
High dv/dt immunity	70 V/ns at T_J = 125 °C - Suppresses false turn-on in high-noise high-side configurations

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 65–100 kHz with 380–400 V DC output from 230 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles full input current with synchronous rectification not required. Use Value: Low Q_g and R_DS(on) reduce total losses by ~12% vs. legacy 800 V MOSFETs, improving system efficiency to >96% at full load.	Use Scenario: High-density 48 V telecom rectifier with universal AC input and active PFC front-end. IC Role / Device Role / Timing Role: Primary switch in interleaved PFC stage; operates with 180° phase shift to reduce input ripple and thermal stress. Use Value: Avalanche rating and robust body diode enable reliable operation during line surges and startup transients without derating.
Industrial Motor Drive Inverter	Renewable Energy Battery Charger
Use Scenario: 3-phase inverter stage for 1–2 kW permanent magnet motor control in HVAC compressors. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT-like half-bridge configuration; driven with isolated gate driver and bootstrap supply. Use Value: 800 V rating accommodates 600 V DC bus with 33% margin for regenerative braking overvoltage spikes.	Use Scenario: Bidirectional DC–DC stage in solar microinverter battery interface, charging LiFePO₄ packs from PV array. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-boost converter; conducts during charging phase with body diode freewheeling. Use Value: Fast, soft-recovery body diode (t_rr = 267 ns, Q_rr = 1.2 μC) reduces switching noise and EMI filter size by 30%.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 65–100 kHz with 380–400 V DC output from 230 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles full input current with synchronous rectification not required.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~12% vs. legacy 800 V MOSFETs, improving system efficiency to >96% at full load.

Use Scenario: High-density 48 V telecom rectifier with universal AC input and active PFC front-end.

IC Role / Device Role / Timing Role: Primary switch in interleaved PFC stage; operates with 180° phase shift to reduce input ripple and thermal stress.

Use Value: Avalanche rating and robust body diode enable reliable operation during line surges and startup transients without derating.

Industrial Motor Drive Inverter

Renewable Energy Battery Charger

Use Scenario: 3-phase inverter stage for 1–2 kW permanent magnet motor control in HVAC compressors.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT-like half-bridge configuration; driven with isolated gate driver and bootstrap supply.

Use Value: 800 V rating accommodates 600 V DC bus with 33% margin for regenerative braking overvoltage spikes.

Use Scenario: Bidirectional DC–DC stage in solar microinverter battery interface, charging LiFePO₄ packs from PV array.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-boost converter; conducts during charging phase with body diode freewheeling.

Use Value: Fast, soft-recovery body diode (t_rr = 267 ns, Q_rr = 1.2 μC) reduces switching noise and EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK80ZFP	800 V, 4.5 A, R_DS(on) = 1.2 Ω, Q_g = 24 nC, TO-220FP package	Higher Q_g increases gate drive loss; larger TO-220FP footprint limits board density	Preferred where higher surge current rating (I_DM = 18 A) outweighs switching loss penalty
IXTP5N80P	800 V, 4.5 A, R_DS(on) = 1.25 Ω, Q_g = 21 nC, TO-220 package	No integrated Zener ESD protection; requires external gate clamp; higher R_thJC = 2.5 °C/W	Selected when cost sensitivity dominates and board-level ESD protection is already implemented

Compared with STP5NK80ZFP and IXTP5N80P, SIHU5N80AE-GE3 offers lower Q_g, tighter R_DS(on) tolerance, integrated gate protection, and superior thermal resistance-making it optimal for space-constrained, high-efficiency 800 V PFC and SMPS designs where gate drive simplicity and reliability are critical.

Availability

SIHU5N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHU5N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHU5N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 800 V-class power conversion systems including PFC, SMPS, and industrial inverters.

FAQ

What is the maximum continuous drain current rating for SIHU5N80AE-GE3 at 100 °C case temperature?

The SIHU5N80AE-GE3 has a continuous drain current rating of 2.8 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package and must be applied in thermal design calculations alongside R_thJC = 2 °C/W to ensure junction temperature remains below 150 °C under steady-state operation.

Does SIHU5N80AE-GE3 include built-in ESD protection, and what level is rated?

Yes, SIHU5N80AE-GE3 integrates a Zener diode for gate-source ESD protection, as confirmed in its Features section. While the datasheet does not specify exact HBM or CDM levels, the inclusion of "Integrated Zener diode ESD protection" indicates factory-level robustness sufficient for standard handling and assembly without requiring external gate clamps.

What is the typical reverse recovery time (t_rr) of the body diode in SIHU5N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHU5N80AE-GE3 is 267 ns, measured at T_J = 25 °C, I_F = I_S = 2 A, di/dt = 100 A/μs, and V_R = 25 V. The maximum value is 534 ns, supporting predictable timing analysis in hard-switched freewheeling paths.

Can SIHU5N80AE-GE3 be used in avalanche mode, and what is its single-pulse rating?

Yes, SIHU5N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of E_AS = 17 mJ, tested under V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.1 A. This rating validates safe operation during transient overcurrent events without external snubbers.

What is the gate-source threshold voltage range for SIHU5N80AE-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHU5N80AE-GE3 is specified as 2 V minimum to 4 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on across temperature and process variation while maintaining noise immunity in high-voltage gate drive environments.

SIHU5N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 321 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU5N80AE-GE3 FAQ

1.How can I place an order for SIHU5N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU5N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU5N80AE-GE3 reliable?

The price and inventory of SIHU5N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU5N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU5N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU5N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU5N80AE-GE3?

SIHU5N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU5N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU5N80AE-GE3?

For technical support, including SIHU5N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU5N80AE-GE3 requirements.

6.How does Aetrix verify that SIHU5N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU5N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU5N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU5N80AE-GE3?

All SIHU5N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU5N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU5N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHU5N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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