Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU6N62E-GE3

Name: SIHU6N62E-GE3
Brand: Vishay Siliconix
SKU: SIHU6N62E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHU6N62E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU6N62E-GE3.pdf

Description:: MOSFET N-CH 620V 6A IPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,148

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHU6N62E-GE3 from Vishay Siliconix is a 620 V, 6 A N-channel power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in server/telecom SMPS and PFC stages. It delivers R_DS(on) = 0.9 Ω @ V_GS = 10 V, Q_g = 34 nC max, and 88 mJ single-pulse avalanche energy - enabling efficient hard-switched topologies with robust ruggedness.

For engineers reviewing the SIHU6N62E-GE3 datasheet, SIHU6N62E-GE3 pinout, SIHU6N62E-GE3 application, or SIHU6N62E-GE3 equivalent, key selection criteria include its 620 V V_DS rating, low gate charge for reduced drive loss, TO-251 thermal performance (R_thJC = 1.6 °C/W), and body diode recovery characteristics (t_rr = 190 ns, Q_rr = 1.3 μC) critical for ZVS/ZCS design validation.

Technical Context

This device employs planar high-voltage silicon technology with optimized charge distribution to achieve low figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode supports continuous 7 A source-drain current and exhibits controlled reverse recovery (dI/dt = 100 A/μs, I_RRM = 11 A), making it suitable for freewheeling and synchronous rectification in high-frequency converters where diode stress must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Withstands DC bus voltages up to 496 V in 400 V AC PFC applications with margin for transients.
R_DS(on) max	0.9 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 3 A, supporting thermally constrained IPAK layouts.
Q_g max	34 nC - Reduces gate drive power and enables use of lower-current drivers in 100–300 kHz SMPS designs.
E_AS	88 mJ - Rated for unclamped inductive switching events without failure, critical for PFC boost choke protection.
t_rr	190 ns - Limits diode reverse recovery spike amplitude and EMI generation during hard commutation.
R_thJC	1.6 °C/W - Supports >70 W power dissipation with moderate heatsinking, typical for mid-power industrial converters.
I_D cont.	6 A @ T_C = 25 °C - Sustains full-load current in compact TO-251 packages when mounted on ≥2 oz copper with thermal pad.

Pinout & Package

IPAK (TO-251) package with isolated drain tab (pin 1), gate (pin 2), and source (pin 3) terminals. The drain connects directly to the exposed metal tab for low-inductance, high-current paths and thermal conduction to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-voltage power output node	Electrically and thermally connected to PCB heatsink area; requires isolation from other layers unless designated as ground-referenced.
Gate (Pin 2)	Control input	Low-impedance capacitive node (C_iss = 578 pF); requires <10 Ω series resistance to damp ringing in fast-switching applications.
Source (Pin 3)	Power return / reference node	Serves as local ground reference for gate driver; layout must minimize inductance to avoid false turn-on during dV/dt transitions.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables higher efficiency than comparable 600 V MOSFETs in 100–250 kHz PFC and LLC primary switches.
Avalanche-rated (UIS)	Guarantees operation under inductive switching stress without derating, eliminating need for external snubbers in many designs.
Ultra-low Q_gd/Q_g ratio	Q_gd = 8 nC / Q_g = 34 nC → ~24 % - Improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.
Controlled body diode t_rr	190 ns with soft recovery profile - Lowers EMI and reduces voltage overshoot during commutation vs. standard fast-recovery diodes.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profiles, supporting lead-free assembly without reliability compromise.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 65–100 kHz with 380–400 V DC output from 3-phase 400 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage, handling full line current with minimal conduction and switching loss. Use Value: 0.9 Ω R_DS(on) and 34 nC Q_g reduce total losses by ~12 % vs. legacy 600 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at 2 kW load.	Use Scenario: Isolated forward or half-bridge DC/DC stage in 48 V telecom rectifier delivering up to 2.5 kW. IC Role / Device Role / Timing Role: Primary-side switch managing 380–400 V bus with synchronous rectification on secondary side. Use Value: 88 mJ E_AS withstands transformer leakage inductance spikes during overcurrent events, eliminating need for clamping circuits in field-deployed units.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to 50/60 Hz AC grid. IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter topology, operating at 16–20 kHz with SiC gate drivers. Use Value: 620 V V_DS rating provides 20 % margin above 1000 V PV open-circuit voltage, ensuring long-term reliability under surge conditions per IEC 61000-4-5.	Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–8 kHz PWM motor control, leveraging low Q_g for reduced gate drive loss. Use Value: 190 ns t_rr and 1.3 μC Q_rr limit diode-induced shoot-through risk during dead-time transitions, improving fault tolerance in 400 V AC systems.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 65–100 kHz with 380–400 V DC output from 3-phase 400 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage, handling full line current with minimal conduction and switching loss.

Use Value: 0.9 Ω R_DS(on) and 34 nC Q_g reduce total losses by ~12 % vs. legacy 600 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at 2 kW load.

Use Scenario: Isolated forward or half-bridge DC/DC stage in 48 V telecom rectifier delivering up to 2.5 kW.

IC Role / Device Role / Timing Role: Primary-side switch managing 380–400 V bus with synchronous rectification on secondary side.

Use Value: 88 mJ E_AS withstands transformer leakage inductance spikes during overcurrent events, eliminating need for clamping circuits in field-deployed units.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to 50/60 Hz AC grid.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter topology, operating at 16–20 kHz with SiC gate drivers.

Use Value: 620 V V_DS rating provides 20 % margin above 1000 V PV open-circuit voltage, ensuring long-term reliability under surge conditions per IEC 61000-4-5.

Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2–8 kHz PWM motor control, leveraging low Q_g for reduced gate drive loss.

Use Value: 190 ns t_rr and 1.3 μC Q_rr limit diode-induced shoot-through risk during dead-time transitions, improving fault tolerance in 400 V AC systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 1.2 Ω, Q_g = 27 nC, TO-220FP package	Larger footprint, higher R_DS(on), but lower Q_g; lacks avalanche rating	Prefer when board space allows TO-220FP and avalanche ruggedness is not required.
IXTP50N10P	100 V V_DS, R_DS(on) = 0.022 Ω, Q_g = 75 nC, TO-220 package	Lower voltage rating, much lower R_DS(on), significantly higher Q_g	Only suitable for low-voltage (<100 V) motor drive or battery systems - not a functional substitute for SIHU6N62E-GE3.

Compared with STP6NK60ZFP, SIHU6N62E-GE3 offers higher voltage margin and guaranteed avalanche capability at the cost of slightly higher R_DS(on); compared with IXTP50N10P, it serves entirely different voltage classes - SIHU6N62E-GE3 is the only viable option for 400–600 V DC bus applications requiring ruggedness and TO-251 form factor.

Availability

SIHU6N62E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles and extended temperature operation.

Supply support for SIHU6N62E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHU6N62E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for demanding hard-switched SMPS, PFC, and industrial inverter applications where avalanche capability and low gate charge are essential.

FAQ

What is the maximum continuous drain current rating for SIHU6N62E-GE3 at 100 °C case temperature?

The SIHU6N62E-GE3 supports 4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 6 A rating at 25 °C case temperature, based on its 1.6 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature limit.

Does SIHU6N62E-GE3 have an avalanche energy rating, and what is its value?

Yes, SIHU6N62E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 88 mJ, tested per JEDEC standard with L = 28.2 mH, I_AS = 2.5 A, and R_g = 25 Ω. This rating is confirmed in the Absolute Maximum Ratings section and enables robust operation in PFC and flyback topologies without external snubbers.

What is the gate-source threshold voltage range for SIHU6N62E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHU6N62E-GE3 is specified as 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against false triggering in noisy industrial environments - consistent with its intended use in high-voltage SMPS where gate drive stability is critical.

Can SIHU6N62E-GE3 be used in place of a logic-level MOSFET in 5 V gate drive applications?

No - SIHU6N62E-GE3 is not a logic-level device. Its R_DS(on) is characterized at V_GS = 10 V, and its V_GS(th) minimum of 2 V does not guarantee full enhancement at 5 V. At V_GS = 5 V, R_DS(on) increases significantly beyond specification, leading to excessive conduction loss. SIHU6N62E-GE3 requires ≥10 V gate drive for optimal performance.

What is the reverse recovery charge (Q_rr) of the body diode in SIHU6N62E-GE3, and why does it matter in PFC designs?

The body diode reverse recovery charge (Q_rr) of SIHU6N62E-GE3 is 1.3 μC, measured at T_J = 25 °C, I_F = 3 A, dI/dt = 100 A/μs, and V_R = 400 V. In boost PFC stages, low Q_rr minimizes diode-induced switching loss and voltage overshoot during turn-off, directly improving efficiency and reducing EMI filter complexity - a key advantage over higher-Q_rr alternatives.

SIHU6N62E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 578 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU6N62E-GE3 FAQ

1.How can I place an order for SIHU6N62E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU6N62E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU6N62E-GE3 reliable?

The price and inventory of SIHU6N62E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU6N62E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU6N62E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU6N62E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU6N62E-GE3?

SIHU6N62E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU6N62E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU6N62E-GE3?

For technical support, including SIHU6N62E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU6N62E-GE3 requirements.

6.How does Aetrix verify that SIHU6N62E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU6N62E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU6N62E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU6N62E-GE3?

All SIHU6N62E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU6N62E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU6N62E-GE3 part is unused and in its original packaging.

Return procedure for SIHU6N62E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …