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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU6N65E-GE3

Name: SIHU6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHU6N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU6N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Long Leads, IPAK, TO-251AB

Datasheet:: SIHU6N65E-GE3.pdf

Description:: MOSFET N-CH 650V 7A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHU6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel power MOSFET in IPAK (TO-251) package, featuring R_DS(on) = 0.6 Ω @ V_GS = 10 V, Q_g = 48 nC, and avalanche-rated (E_AS = 56 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHU6N65E-GE3 datasheet, SIHU6N65E-GE3 pinout, SIHU6N65E-GE3 application, or SIHU6N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, 0.6 Ω R_DS(on), ultra-low Q_g, UIS-rated ruggedness, and TO-251 thermal performance for industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for hard-switched topologies. Its low C_iss (820 pF) and C_oss (40 pF) reduce capacitive losses, while the 11 nC Q_gd/Q_gs ratio of ~1.8 supports fast, controllable turn-off with minimal Miller-induced shoot-through risk.

The device integrates a robust body diode with t_rr = 237 ns and Q_rr = 2.2 μC at 25 °C, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters. Its R_thJC = 1.6 °C/W enables high-power density mounting on heatsinks without derating penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V AC input rectified to 560–580 V DC bus with 10–15 % margin for surge and ripple.
R_DS(on) max	0.6 Ω @ 10 V - Enables <1.8 W conduction loss at 3 A continuous drain current in PFC boost stages.
Q_g max	48 nC - Reduces gate drive power requirement and allows use of lower-cost, lower-current drivers (e.g., 1 A peak).
E_AS	56 mJ - Withstands unclamped inductive switching events in motor drives and welder primary switches without failure.
t_r/t_f	12–24 ns / 20–40 ns - Enables >200 kHz switching in LLC resonant converters while maintaining ZVS boundary control.
R_thJC	1.6 °C/W - Allows 78 W dissipation with ≤125 °C junction rise over case, supporting compact heatsink designs.
I_D (T_C = 100 °C)	5 A - Sustains full-load operation in 100 °C ambient telecom rectifier modules without forced air.

Pinout & Package

SIHU6N65E-GE3 is housed in an IPAK (TO-251AA) package with exposed drain pad for thermal enhancement. The lead-free, halogen-free construction complies with RoHS and Vishay's material categorization per doc. 99912.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold V_GS(th) = 2–4 V ensures reliable turn-on with standard PWM controllers.
D (Drain)	High-side power output	Connected to PCB thermal pad; electrically and thermally ties to internal die drain metallization for low-inductance, high-current paths.
S (Source)	Power return/reference	Serves as local ground reference for gate driver; must be routed with low inductance to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	28.8 Ω·nC - Balances conduction and switching loss for optimal efficiency across 50–300 kHz SMPS operating range.
Avalanche energy rating (UIS)	56 mJ - Eliminates need for external snubbers in inductive load switching, reducing BOM count and layout complexity.
Body diode t_rr and Q_rr	237 ns / 2.2 μC - Minimizes reverse recovery loss and EMI in DCM boost and flyback topologies.
Low C_iss and C_oss	820 pF / 40 pF - Reduces capacitive gate drive loss and improves light-load efficiency in adaptive frequency controllers.
Thermal resistance R_thJC	1.6 °C/W - Enables direct mounting to aluminum heatsinks without thermal interface pads in space-constrained 1U server PSUs.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC half-bridge, operating at 100–200 kHz. Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom at 70 °C ambient.	Use Scenario: Output rectification and isolation switching in -48 V distributed power architecture (DPA) rectifiers. IC Role / Device Role / Timing Role: Synchronous rectifier and secondary-side switch in forward or active clamp forward topology. Use Value: Low Q_gd/Q_gs ratio and fast t_f ensure clean turn-off under high dV/dt conditions (>30 V/ns), minimizing cross-conduction risk.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level MPPT boost stage feeding three-phase inverter bridge. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling up to 1000 V DC bus transients in outdoor-rated inverters. Use Value: 650 V V_DS with 56 mJ E_AS withstands lightning-induced surges and grid fault recovery without clamping circuits.	Use Scenario: IGBT gate driver output stage and auxiliary supply switch in 3-phase inverter power module auxiliary rails. IC Role / Device Role / Timing Role: Isolated DC/DC converter primary switch supplying isolated gate drive power for main IGBTs. Use Value: R_thJC = 1.6 °C/W and 7 A I_D rating support continuous 24/7 operation in 60 °C cabinet environments without fan derating.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC half-bridge, operating at 100–200 kHz.

Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom at 70 °C ambient.

Use Scenario: Output rectification and isolation switching in -48 V distributed power architecture (DPA) rectifiers.

IC Role / Device Role / Timing Role: Synchronous rectifier and secondary-side switch in forward or active clamp forward topology.

Use Value: Low Q_gd/Q_gs ratio and fast t_f ensure clean turn-off under high dV/dt conditions (>30 V/ns), minimizing cross-conduction risk.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level MPPT boost stage feeding three-phase inverter bridge.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling up to 1000 V DC bus transients in outdoor-rated inverters.

Use Value: 650 V V_DS with 56 mJ E_AS withstands lightning-induced surges and grid fault recovery without clamping circuits.

Use Scenario: IGBT gate driver output stage and auxiliary supply switch in 3-phase inverter power module auxiliary rails.

IC Role / Device Role / Timing Role: Isolated DC/DC converter primary switch supplying isolated gate drive power for main IGBTs.

Use Value: R_thJC = 1.6 °C/W and 7 A I_D rating support continuous 24/7 operation in 60 °C cabinet environments without fan derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-220FP package	Larger R_thJA (62 °C/W vs. SIHU6N65E-GE3's 1.6 °C/W) limits power density; no avalanche rating	Prefer SIHU6N65E-GE3 where thermal constraints or surge immunity are critical; STP6NK60ZFP suits cost-sensitive, lower-power (<300 W) designs.
IXTP50N10P	100 V V_DS, R_DS(on) = 0.022 Ω, Q_g = 110 nC, TO-220 package	Lower voltage rating precludes use in 400 V+ AC/DC front ends; higher Q_g increases driver stress	Not interchangeable - IXTP50N10P serves low-voltage motor control; SIHU6N65E-GE3 is required for 650 V primary-side switching.

Compared with STP6NK60ZFP, SIHU6N65E-GE3 offers superior surge robustness and thermal performance for high-reliability telecom and solar applications; versus IXTP50N10P, it provides essential 650 V capability but trades off lower R_DS(on) for voltage rating and ruggedness.

Availability

SIHU6N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHU6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHU6N65E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for high-efficiency, high-reliability switching in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHU6N65E-GE3 at 100 °C case temperature?

The SIHU6N65E-GE3 supports a continuous drain current of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from its 7 A value at 25 °C, based on its R_thJC = 1.6 °C/W and maximum T_J = 150 °C limit. Designers must verify heatsink design to maintain case temperature ≤100 °C under full load to sustain this current in SIHU6N65E-GE3-based power stages.

Does SIHU6N65E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHU6N65E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 56 mJ, tested per note b in the datasheet (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A). This ruggedness enables reliable operation in inductive load switching without external snubbers, making SIHU6N65E-GE3 suitable for welding equipment and motor drive H-bridge freewheeling paths.

What is the gate threshold voltage range for SIHU6N65E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHU6N65E-GE3 is specified as 2–4 V at V_DS = V_GS and I_D = 250 μA. This range confirms logic-level compatibility, allowing direct drive from 3.3 V or 5 V microcontrollers when paired with appropriate gate resistors. However, full enhancement requires V_GS ≥ 10 V to achieve the rated R_DS(on) = 0.6 Ω, so SIHU6N65E-GE3 should be driven with ≥10 V gate voltage in high-current applications.

What package type does SIHU6N65E-GE3 use, and what are its thermal advantages?

SIHU6N65E-GE3 uses the IPAK (TO-251AA) package, which features an exposed drain pad for direct thermal coupling to the PCB or heatsink. Its R_thJC = 1.6 °C/W enables efficient heat transfer from junction to case, supporting higher power density than TO-220 alternatives. The compact footprint (8.89 × 6.35 mm) and surface-mount compatibility make SIHU6N65E-GE3 ideal for space-constrained 1U server power supplies.

How does the body diode performance of SIHU6N65E-GE3 compare to standard recovery diodes?

The integrated body diode of SIHU6N65E-GE3 exhibits t_rr = 237 ns and Q_rr = 2.2 μC at T_J = 25 °C, IS = 3 A, dI/dt = 100 A/μs - significantly faster than standard FRD-based solutions. This low reverse recovery charge reduces switching loss and EMI in DCM PFC and flyback converters. While not a dedicated SiC diode, SIHU6N65E-GE3's body diode performance is optimized for synchronous rectification roles where discrete diode replacement would increase cost and board area.

SIHU6N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Long Leads, IPAK, TO-251AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU6N65E-GE3 FAQ

1.How can I place an order for SIHU6N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU6N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU6N65E-GE3 reliable?

The price and inventory of SIHU6N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU6N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU6N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU6N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU6N65E-GE3?

SIHU6N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU6N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU6N65E-GE3?

For technical support, including SIHU6N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU6N65E-GE3 requirements.

6.How does Aetrix verify that SIHU6N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU6N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU6N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU6N65E-GE3?

All SIHU6N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU6N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU6N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHU6N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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