Vishay Siliconix SIHU6N80AE-GE3

Overview

SIHU6N80AE-GE3 from Vishay Siliconix is an 800 V, 5 A N-channel power MOSFET in IPAK (TO-251) package, featuring 0.826 Ω R_DS(on) at V_GS = 10 V, 22.5 nC total gate charge, and avalanche-rated operation. It serves as a high-voltage switching element in telecom power supplies, PFC stages, and industrial motor drives where robust unclamped inductive switching and low conduction loss are required.

For engineers reviewing the SIHU6N80AE-GE3 datasheet, SIHU6N80AE-GE3 pinout, SIHU6N80AE-GE3 application, or SIHU6N80AE-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, body diode recovery characteristics, and real-world use context for high-efficiency 600–800 V SMPS designs.

Technical Context

This device employs a planar high-voltage silicon process optimized for reduced figure-of-merit (R_DS(on) × Q_g = 18.6 Ω·nC), low effective output capacitance (C_oss(tr) = 92 pF), and controlled dv/dt immunity (100 V/ns at T_J = 125 °C). Its integrated Zener-protected gate enables ESD robustness without external clamping.

The MOSFET supports unclamped inductive switching with single-pulse avalanche energy rating of 20.3 mJ (V_DD = 140 V, L = 28.2 mH, I_AS = 1.2 A), and exhibits fast reverse recovery (t_rr = 285–570 ns, Q_rr = 1.7–3.4 μC) under 100 A/μs di/dt conditions - critical for hard-switched PFC and resonant topologies.

Key Specifications

Pinout & Package

SIHU6N80AE-GE3 is housed in an IPAK (TO-251AA) package with three leads: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed thermal pad on the underside of the package, enabling low-thermal-resistance mounting to heatsinks or PCB copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK80ZFP and IXTP6N80P, SIHU6N80AE-GE3 delivers superior thermal performance via its IPAK thermal pad and lowest R_DS(on) × Q_g FOM, making it optimal for space-constrained, high-efficiency 800 V switching where junction temperature control and gate drive simplicity are critical.

Availability

SIHU6N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHU6N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHU6N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-density switch-mode power conversion in 600–800 V applications including PFC, telecom rectification, and industrial inverters.

FAQ

What is the maximum continuous drain current rating for SIHU6N80AE-GE3 at 100 °C case temperature?

The SIHU6N80AE-GE3 has a continuous drain current rating of 3.2 A when the case temperature is maintained at 100 °C. This value is derived from thermal derating curves and reflects safe operation within the 150 °C maximum junction temperature limit. At 25 °C case temperature, the rating rises to 5 A. Engineers must verify heatsink design and ambient conditions to ensure SIHU6N80AE-GE3 remains within this limit during sustained operation.

Does SIHU6N80AE-GE3 include integrated ESD protection on the gate terminal?

Yes, SIHU6N80AE-GE3 features integrated Zener diode ESD protection on the gate terminal, limiting gate-source leakage to ±10 μA at ±20 V and ±50 μA at ±30 V. This eliminates the need for external gate protection components in most board-level environments. The protection is validated per standard human-body model (HBM) tests and contributes to robust handling during manufacturing and field operation of SIHU6N80AE-GE3.

What is the typical reverse recovery time (t_rr) of the body diode in SIHU6N80AE-GE3?

The typical reverse recovery time (t_rr) of the intrinsic body diode in SIHU6N80AE-GE3 is 285 ns, with a maximum of 570 ns under test conditions of T_J = 25 °C, I_F = I_S = 3 A, di/dt = 100 A/μs, and V_R = 25 V. This fast recovery characteristic reduces switching losses and voltage overshoot in freewheeling and synchronous rectification applications using SIHU6N80AE-GE3.

Can SIHU6N80AE-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHU6N80AE-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 20.3 mJ. This rating is measured under defined conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.2 A. Designers may rely on this specification for fault-tolerant operation in SIHU6N80AE-GE3-based PFC and motor drive circuits without additional snubbers.

What package type does SIHU6N80AE-GE3 use, and how is thermal management implemented?

SIHU6N80AE-GE3 uses the IPAK (TO-251AA) package, which features an exposed drain-connected thermal pad on the underside. Thermal management relies on soldering this pad to a large PCB copper pour or attaching it to an external heatsink, achieving a maximum junction-to-case thermal resistance (R_thJC) of 2 °C/W. This architecture enables efficient heat extraction critical for high-power density designs using SIHU6N80AE-GE3 in continuous conduction mode.