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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU6N80E-GE3

Name: SIHU6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHU6N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU6N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Long Leads, IPAK, TO-251AB

Datasheet:: SIHU6N80E-GE3.pdf

Description:: MOSFET N-CH 800V 5.4A IPAK

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Product details

Overview

SIHU6N80E-GE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel high-voltage power MOSFET in IPAK (TO-251) package, featuring 0.82 Ω R_DS(on) at V_GS = 10 V, 44 nC total gate charge, and 95 mJ avalanche energy rating. It serves as a primary switching device in high-efficiency PFC and SMPS stages for telecom and server power supplies.

For engineers reviewing the SIHU6N80E-GE3 datasheet, SIHU6N80E-GE3 pinout, SIHU6N80E-GE3 application, or SIHU6N80E-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-251 thermal performance for conduction- and switching-loss-sensitive 480–640 V DC-link designs.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for fast switching with controlled dv/dt (70 V/ns at T_J = 125 °C) and low C_iss (827 pF). Its body diode exhibits 282 ns typical reverse recovery time and 2.0 μC Q_rr at I_F = 3 A, enabling hard-switched operation in continuous conduction mode PFC.

The device operates with gate threshold voltage of 2.0–4.0 V and supports standard 10 V gate drive. Its R_thJC of 1.6 °C/W enables 78 W power dissipation at T_C = 25 °C, and it is rated for junction temperatures from –55 °C to +150 °C with Pb-free/halogen-free construction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands 640 V DC-link with 25 % margin; suitable for universal-input PFC and telecom rectified bus applications.
R_DS(on) max	0.94 Ω at V_GS = 10 V, I_D = 3 A - Enables <1.5 W conduction loss at 3 A, critical for thermally constrained IPAK layouts.
Q_g max	44 nC - Low gate charge reduces driver power and switching transition time, lowering E_SW in 100–300 kHz PFC stages.
E_AS	95 mJ - Avalanche-rated for unclamped inductive switching events without failure, supporting robust hard-switched topologies.
C_iss	827 pF - Low input capacitance minimizes Miller effect and improves gate drive efficiency in high-frequency operation.
T_J range	–55 °C to +150 °C - Supports industrial and telecom ambient conditions with full parameter validity across range.
R_thJC	1.6 °C/W - Enables direct heatsink mounting for high-power density designs; case temperature must be monitored for derating.

Pinout & Package

SIHU6N80E-GE3 uses the IPAK (TO-251AA) package: single-ended, surface-mountable with drain-connected tab for thermal and electrical connection. The molded plastic body includes a thermal pad on the drain side (D1 = 5.21 mm, E1 = 4.32 mm per Vishay Doc. 91362), and lead finish is matte tin.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <100 nA leakage current handling; sensitive to ESD (±30 V rating).
D (Drain)	High-side power terminal	Connected to internal die backside and exposed thermal pad; must be soldered to PCB copper pour for thermal management and current return path.
S (Source)	Reference and return node	Serves as local ground reference for gate drive; carries full load current (5.4 A continuous); source inductance directly impacts switching stability.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	0.82 Ω × 22 nC (typ.) = 18.0 Ω·nC - Reduces combined conduction and switching losses more effectively than legacy 800 V MOSFETs.
Avalanche energy rating	95 mJ single-pulse (V_DD = 140 V, L = 28.2 mH) - Eliminates need for external snubbers in flyback or LLC resonant converter primary switches.
Body diode Q_rr	2.0–4.0 μC - Enables predictable reverse recovery behavior in boost PFC, reducing diode-induced voltage spikes and EMI.
dv/dt immunity	70 V/ns at T_J = 125 °C - Suppresses false turn-on during high-speed switching, improving reliability in high-noise power stage environments.
Pb-free & halogen-free	Compliant with Vishay's material categorization per Doc. 99912 - Meets RoHS 2011/65/EU and JEDEC J-STD-609A Class 1 requirements.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Active boost PFC front-end operating at 100–300 kHz with 380–400 V DC output from 90–264 V AC input. IC Role / Device Role / Timing Role: Main switching transistor controlling inductor current; synchronized to PWM controller timing with 13–26 ns turn-on delay. Use Value: 0.82 Ω R_DS(on) and 44 nC Q_g enable >96 % efficiency at 1.5 kW while maintaining thermal rise below 65 °C on 2-oz copper.	Use Scenario: Isolated forward or half-bridge DC–DC stage converting –48 V telecom battery backup to 12 V system rails. IC Role / Device Role / Timing Role: High-side switch in primary-side power conversion; handles repetitive 800 V blocking with 15 A pulsed drain current capability. Use Value: 95 mJ E_AS rating ensures survival during output short-circuit events without external clamping components.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC–AC H-bridge stage converting 600–800 V PV array output into grid-synchronized 50/60 Hz AC. IC Role / Device Role / Timing Role: Upper-leg switching element subjected to high dv/dt transients during commutation; body diode conducts freewheeling current. Use Value: 282 ns t_rr and 11 A I_RRM minimize cross-conduction losses and reduce EMI generation during bidirectional switching.	Use Scenario: Three-phase inverter driving 3–7.5 kW induction motors in HVAC or pump systems with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch managing motor phase current return path; body diode handles inductive kickback during PWM dead-time. Use Value: 1.2 V V_SD at 3 A and 15 A I_SM rating support efficient regenerative energy recirculation without external freewheeling diodes.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC front-end operating at 100–300 kHz with 380–400 V DC output from 90–264 V AC input.

IC Role / Device Role / Timing Role: Main switching transistor controlling inductor current; synchronized to PWM controller timing with 13–26 ns turn-on delay.

Use Value: 0.82 Ω R_DS(on) and 44 nC Q_g enable >96 % efficiency at 1.5 kW while maintaining thermal rise below 65 °C on 2-oz copper.

Use Scenario: Isolated forward or half-bridge DC–DC stage converting –48 V telecom battery backup to 12 V system rails.

IC Role / Device Role / Timing Role: High-side switch in primary-side power conversion; handles repetitive 800 V blocking with 15 A pulsed drain current capability.

Use Value: 95 mJ E_AS rating ensures survival during output short-circuit events without external clamping components.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC–AC H-bridge stage converting 600–800 V PV array output into grid-synchronized 50/60 Hz AC.

IC Role / Device Role / Timing Role: Upper-leg switching element subjected to high dv/dt transients during commutation; body diode conducts freewheeling current.

Use Value: 282 ns t_rr and 11 A I_RRM minimize cross-conduction losses and reduce EMI generation during bidirectional switching.

Use Scenario: Three-phase inverter driving 3–7.5 kW induction motors in HVAC or pump systems with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch managing motor phase current return path; body diode handles inductive kickback during PWM dead-time.

Use Value: 1.2 V V_SD at 3 A and 15 A I_SM rating support efficient regenerative energy recirculation without external freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK80ZFP	800 V, 5.5 A, R_DS(on) = 0.95 Ω, Q_g = 42 nC, TO-220FP package	Higher R_thJA (62 °C/W vs. SIHU6N80E-GE3's 1.6 °C/W junction-to-case), requires larger heatsink	Prefer when through-hole assembly or higher peak pulse current (22 A) is required; not drop-in due to different package and pinout.
IXTH6N80L	800 V, 6.0 A, R_DS(on) = 0.90 Ω, Q_g = 38 nC, TO-247 package	Lower Q_g but larger footprint and higher cost; no integrated thermal pad	Choose for ultra-low switching loss in high-volume industrial inverters where board space allows TO-247; thermal design differs significantly.

Compared with STP6NK80ZFP and IXTH6N80L, SIHU6N80E-GE3 delivers superior thermal performance via its TO-251 drain-tab construction, enabling higher power density in space-constrained telecom and server modules without compromising avalanche ruggedness or gate drive simplicity.

Availability

SIHU6N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and Pb-free/halogen-free compliance.

Supply support for SIHU6N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHU6N80E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for high-efficiency, high-ruggedness switching in 400–800 V DC-link power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHU6N80E-GE3 at 100 °C case temperature?

The SIHU6N80E-GE3 has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain T_J ≤ 150 °C. The SIHU6N80E-GE3 datasheet confirms this value under V_GS = 10 V conditions.

Does SIHU6N80E-GE3 support logic-level gate drive?

No, SIHU6N80E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but it is characterized and specified for operation at V_GS = 10 V, with R_DS(on), Q_g, and switching parameters guaranteed only at that drive level. Driving SIHU6N80E-GE3 with 5 V logic will result in incomplete enhancement and excessive conduction loss. The SIHU6N80E-GE3 requires a dedicated 10 V gate driver.

What is the significance of the "-GE3" suffix in SIHU6N80E-GE3?

The "-GE3" suffix indicates that SIHU6N80E-GE3 is packaged in tape-and-reel format with Pb-free (RoHS-compliant) and halogen-free terminations, per Vishay's standard ordering nomenclature. It denotes compliance with JEDEC J-STD-609A Class 1 and material categorization per Doc. 99912. The SIHU6N80E-GE3 is not a different die or revision-it is the standard E Series device in green, environmentally compliant packaging.

Can SIHU6N80E-GE3 replace older 800 V MOSFETs like IRFP460 in existing designs?

SIHU6N80E-GE3 is not a direct pin-compatible replacement for IRFP460 (TO-247) due to its IPAK (TO-251) package, different pinout (G-D-S vs. G-D-S but non-identical lead spacing and thermal pad), and lower R_DS(on) (0.82 Ω vs. 0.27 Ω). While SIHU6N80E-GE3 offers better FOM and avalanche rating, layout redesign and thermal validation are required. The SIHU6N80E-GE3 should not be substituted without verifying gate drive compatibility, PCB pad geometry, and thermal performance.

What is the recommended gate resistor value for SIHU6N80E-GE3 in a 200 kHz PFC application?

For a 200 kHz boost PFC stage, a gate resistor of 9.1 Ω is validated in the SIHU6N80E-GE3 datasheet (td(on) and td(off) test condition), yielding 13–26 ns turn-on delay and 27–54 ns turn-off delay. This value balances switching speed against gate ringing and EMI. Lower values (<5 Ω) increase dv/dt stress and EMI; higher values (>15 Ω) raise switching losses. The SIHU6N80E-GE3 gate input resistance is 0.5–2.0 Ω, so external R_g dominates drive loop impedance.

SIHU6N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-251-3 Long Leads, IPAK, TO-251AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251)

SIHU6N80E-GE3 FAQ

1.How can I place an order for SIHU6N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU6N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU6N80E-GE3 reliable?

The price and inventory of SIHU6N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU6N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU6N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU6N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU6N80E-GE3?

SIHU6N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU6N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU6N80E-GE3?

For technical support, including SIHU6N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU6N80E-GE3 requirements.

6.How does Aetrix verify that SIHU6N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU6N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU6N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU6N80E-GE3?

All SIHU6N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU6N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU6N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHU6N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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