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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU7N60E-E3

Name: SIHU7N60E-E3
Brand: Vishay Siliconix
SKU: SIHU7N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU7N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU7N60E-E3.pdf

Description:: MOSFET N-CH 600V 7A TO251

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHU7N60E-E3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, featuring R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g = 20–40 nC, and avalanche-rated (E_AS = 43 mJ). It serves as a high-voltage switching element in primary-side SMPS and PFC stages of telecom and server power supplies.

For engineers reviewing the SIHU7N60E-E3 datasheet, SIHU7N60E-E3 pinout, SIHU7N60E-E3 application, or SIHU7N60E-E3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced switching loss, TO-251 thermal performance (R_thJC = 1.6 °C/W), and integrated body diode with t_rr = 230 ns and Q_rr = 1.9 μC.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust turn-on under standard 10 V gate drive, while dV/dt immunity (70 V/ns at T_J = 125 °C) supports reliable operation in noisy high-power environments.

The integrated body diode is rated for continuous source-drain current up to 7 A and pulsed current up to 18 A, with reverse recovery characteristics (t_rr, Q_rr) specified at I_F = 3.5 A, dI/dt = 100 A/μs, and V_R = 20 V - enabling use in freewheeling and synchronous rectification roles where controlled diode recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - maximum blocking voltage for primary-side switch in offline 400 V DC bus applications
R_DS(on) max	0.6 Ω at V_GS = 10 V, T_J = 25 °C - enables <7 W conduction loss at 3.5 A DC
Q_g max	40 nC - low total gate charge reduces driver power and switching transition time
E_AS	43 mJ - unclamped inductive switching energy rating confirms ruggedness in flyback and LLC resonant converters
t_r/t_f	13–26 ns / 14–28 ns - fast switching transitions minimize overlap loss in hard-switched topologies
R_thJC	1.6 °C/W - low junction-to-case thermal resistance supports >70 W power dissipation with moderate heatsinking
I_D cont	7 A at T_C = 25 °C - continuous drain current capability suitable for 100–300 W power stages

Pinout & Package

IPAK (TO-251) package with exposed drain pad on underside for thermal and electrical connection. Three-terminal configuration: Gate (G), Drain (D), Source (S). Standard lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; input capacitance C_iss = 680 pF affects driver sizing
D	Drain	Main high-voltage power terminal; connected to exposed thermal pad; carries full switched current and voltage stress
S	Source	Power return and reference node for gate drive; body diode anode; tied to PCB ground plane for EMI control

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	≤ 24 Ω·nC - balances conduction and switching losses for high-efficiency 65–100 kHz SMPS designs
Avalanche energy rating (E_AS)	43 mJ - enables reliable operation without external snubbers in inductive load switching
Body diode t_rr and Q_rr	230 ns / 1.9 μC - supports ZVS-assisted topologies and reduces diode-induced EMI in PFC boost stages
High dV/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on during high dv/dt transients in high-frequency converters
Thermal resistance R_thJC	1.6 °C/W - allows direct mounting to heatsink via drain pad, simplifying thermal design for medium-power systems

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching transistor in 80+ Platinum-certified 1 kW server PSU using active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC bus; operates at 100–300 kHz with hard or soft switching. Use Value: Low Q_g and R_DS(on) reduce both switching and conduction losses, directly improving efficiency above 95% at full load.	Use Scenario: Boost switch in 3 kW telecom rectifier PFC stage operating at 65 kHz with 400 V output. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling inductor current in continuous conduction mode (CCM) PFC. Use Value: Controlled body diode recovery (Q_rr = 1.9 μC) minimizes reverse recovery loss and associated EMI in high-current boost circuits.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter DC/DC stage interfacing panels to MPPT controller. IC Role / Device Role / Timing Role: 600 V-rated switch managing variable DC input (200–1000 V) with bidirectional current capability via body diode. Use Value: Avalanche rating (E_AS = 43 mJ) provides margin against voltage spikes during rapid irradiance changes or grid faults.	Use Scenario: Inverter leg switch in 5 HP industrial VFD driving induction motor with regenerative braking. IC Role / Device Role / Timing Role: High-reliability power switch in three-phase bridge; handles repetitive inductive kickback and reverse current flow. Use Value: Robust UIS capability and low R_DS(on) sustain stable operation under high dI/dt conditions (100 A/μs) during motor commutation.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching transistor in 80+ Platinum-certified 1 kW server PSU using active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC bus; operates at 100–300 kHz with hard or soft switching.

Use Value: Low Q_g and R_DS(on) reduce both switching and conduction losses, directly improving efficiency above 95% at full load.

Use Scenario: Boost switch in 3 kW telecom rectifier PFC stage operating at 65 kHz with 400 V output.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling inductor current in continuous conduction mode (CCM) PFC.

Use Value: Controlled body diode recovery (Q_rr = 1.9 μC) minimizes reverse recovery loss and associated EMI in high-current boost circuits.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter DC/DC stage interfacing panels to MPPT controller.

IC Role / Device Role / Timing Role: 600 V-rated switch managing variable DC input (200–1000 V) with bidirectional current capability via body diode.

Use Value: Avalanche rating (E_AS = 43 mJ) provides margin against voltage spikes during rapid irradiance changes or grid faults.

Use Scenario: Inverter leg switch in 5 HP industrial VFD driving induction motor with regenerative braking.

IC Role / Device Role / Timing Role: High-reliability power switch in three-phase bridge; handles repetitive inductive kickback and reverse current flow.

Use Value: Robust UIS capability and low R_DS(on) sustain stable operation under high dI/dt conditions (100 A/μs) during motor commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 6.5 A, R_DS(on) = 0.7 Ω, Q_g = 42 nC, TO-220FP package	Higher R_DS(on) and larger package footprint; lacks specified E_AS rating	Acceptable where lower current rating and higher conduction loss are tolerable; requires larger heatsink due to TO-220FP thermal resistance
IPP60R099C6	600 V, 36 A, R_DS(on) = 0.099 Ω, Q_g = 63 nC, TO-220 package, CoolMOS™ superjunction	Lower R_DS(on) but higher Q_g; significantly higher cost and over-spec'd current rating	Overqualified for 7 A applications; justified only if future power scaling or ultra-low conduction loss is required

Compared with STP7NK60ZFP and IPP60R099C6, the SIHU7N60E-E3 delivers optimal balance of 600 V ruggedness, 7 A current capability, low gate charge, and TO-251 thermal efficiency - making it a purpose-fit solution for cost-sensitive, medium-power SMPS and PFC designs without overengineering.

Availability

SIHU7N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHU7N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHU7N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in server, telecom, and industrial power conversion systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHU7N60E-E3 at 100 °C case temperature?

The SIHU7N60E-E3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the IPAK package and ensures safe operation under sustained high-temperature conditions typical in enclosed power supplies. The SIHU7N60E-E3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHU7N60E-E3 have a specified avalanche energy rating, and how is it tested?

Yes, the SIHU7N60E-E3 is rated for single-pulse avalanche energy (E_AS) of 43 mJ, tested per JEDEC standard with V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, and I_AS = 2.5 A. This rating confirms the device can safely absorb inductive energy without failure during transient overvoltage events, a key requirement in flyback and resonant converter designs where the SIHU7N60E-E3 is commonly deployed.

What is the gate threshold voltage range for SIHU7N60E-E3, and why does it matter for gate drive design?

The SIHU7N60E-E3 has a gate threshold voltage (V_GS(th)) range of 2–4 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on. For robust operation, gate drive must exceed 4 V minimum and be stabilized to avoid operation near the threshold region where R_DS(on) increases sharply - a critical consideration in high-efficiency designs using the SIHU7N60E-E3.

How does the body diode performance of SIHU7N60E-E3 compare to standard silicon diodes in PFC applications?

The SIHU7N60E-E3 body diode exhibits t_rr = 230 ns and Q_rr = 1.9 μC at I_F = 3.5 A, dI/dt = 100 A/μs, and V_R = 20 V - significantly faster and lower-charge than general-purpose FRDs, though slower than dedicated SiC Schottky diodes. In PFC boost stages, this enables acceptable efficiency without requiring external diode replacement, especially when used with zero-current switching techniques that mitigate reverse recovery impact in the SIHU7N60E-E3.

Is SIHU7N60E-E3 compatible with lead-free reflow soldering processes?

Yes, the SIHU7N60E-E3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. Its IPAK (TO-251) package uses lead (Pb)-free and halogen-free terminations, fully compliant with RoHS Directive 2011/65/EU. This makes the SIHU7N60E-E3 suitable for modern SMT assembly lines without requiring special thermal profiling beyond standard Pb-free profiles.

SIHU7N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU7N60E-E3 FAQ

1.How can I place an order for SIHU7N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU7N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU7N60E-E3 reliable?

The price and inventory of SIHU7N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU7N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHU7N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU7N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU7N60E-E3?

SIHU7N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU7N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU7N60E-E3?

For technical support, including SIHU7N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU7N60E-E3 requirements.

6.How does Aetrix verify that SIHU7N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHU7N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU7N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHU7N60E-E3?

All SIHU7N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU7N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU7N60E-E3 part is unused and in its original packaging.

Return procedure for SIHU7N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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