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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHU7N60E-GE3

Name: SIHU7N60E-GE3
Brand: Vishay Siliconix
SKU: SIHU7N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHU7N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHU7N60E-GE3.pdf

Description:: MOSFET N-CH 600V 7A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,990

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Product details

Overview

SIHU7N60E-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, featuring R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g = 20–40 nC, and avalanche-rated (E_AS = 43 mJ). It serves as a high-voltage switching element in offline SMPS and PFC stages.

For engineers reviewing the SIHU7N60E-GE3 datasheet, SIHU7N60E-GE3 pinout, SIHU7N60E-GE3 application, or SIHU7N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for high-frequency hard-switching, TO-251 thermal performance (R_thJC = 1.6 °C/W), and integrated body diode with t_rr = 230 ns.

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for reduced conduction and switching losses. Its low C_iss (680 pF typ.) and ultra-low Q_gd (9 nC max.) enable fast turn-on/turn-off with minimal Miller effect, supporting operation up to 100 kHz in continuous conduction mode PFC.

The MOSFET integrates an avalanche-rated body diode (E_AS = 43 mJ) and exhibits dV/dt ruggedness of 70 V/ns at T_J = 125 °C. Its V_GS(th) range (2–4 V) ensures robust gate drive margin while maintaining compatibility with standard 10 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage (e.g., 400 V DC bus + 20% surge) in universal-input AC/DC converters
R_DS(on) max	0.6 Ω at V_GS = 10 V, I_D = 3.5 A - Enables <1.5 W conduction loss at 3.5 A, suitable for 100–300 W power stages
Q_g max	40 nC - Reduces gate driver power demand and enables efficient 65–100 kHz operation with low R_g drive
E_AS	43 mJ - Supports unclamped inductive switching without external snubbers in flyback or resonant topologies
t_rr	230 ns - Limits reverse recovery loss and EMI during diode commutation in bridge-leg or synchronous rectifier use
R_thJC	1.6 °C/W - Allows 78 W dissipation with modest heatsinking (e.g., 25 °C case → 139 °C junction at full PD)
V_GS(th)	2–4 V - Ensures reliable turn-on with 10 V gate drive while avoiding spurious conduction from noise

Pinout & Package

IPAK (TO-251) package with exposed drain pad on underside for thermal conduction; three-terminal single-channel configuration. Standard lead (Pb)-free and halogen-free finish per JEDEC TO-251AA outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full R_DS(on) specification; input capacitance C_iss = 680 pF
D	Drain	Main high-voltage current path; electrically connected to thermal pad; rated for 600 V blocking and 18 A pulsed current
S	Source	Reference node for gate drive and current sensing; forms integral body diode anode; tied to PCB ground plane in most topologies

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	≤ 24 Ω·nC - Balances conduction and switching loss for optimal efficiency in 65–100 kHz PFC and LLC designs
Avalanche energy rating	E_AS = 43 mJ - Eliminates need for external clamping in inductive load switching, reducing BOM count
Ultra-low Q_gd	9 nC max. - Minimizes Miller plateau time, enabling clean hard-switching with low gate resistance (R_g = 9.1 Ω)
Body diode t_rr	230 ns typ. - Reduces diode recovery loss and associated EMI in half-bridge and synchronous rectification applications
High dV/dt immunity	70 V/ns at T_J = 125 °C - Prevents false turn-on during fast voltage transients in high-side switching configurations

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U server PSU (500–1000 W). IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC bus, operating at 100–200 kHz with zero-voltage switching. Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS margin; R_thJC = 1.6 °C/W supports compact heatsink integration.	Use Scenario: DC-link switch in string-level PV inverter MPPT stage or DC-DC boost converter (600–1000 V input). IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost topology, switching at 30–60 kHz. Use Value: 600 V V_DS rating accommodates 1000 V PV open-circuit surges; avalanche rating handles inductive kick during fault clearing.
Fluorescent Ballast	Industrial Welding
Use Scenario: Half-bridge switch in electronic fluorescent lamp ballast driving 40–60 kHz resonant tank. IC Role / Device Role / Timing Role: Fast-switching N-channel switch with integrated body diode conducting reverse current during dead-time. Use Value: t_rr = 230 ns minimizes diode recovery loss and audible noise; low R_DS(on) reduces thermal stress in sealed fixture environments.	Use Scenario: Primary-side switch in IGBT gate driver auxiliary supply or isolated DC-DC for welding inverter control. IC Role / Device Role / Timing Role: High-reliability 600 V switch in 20–50 kHz flyback or forward converter powering gate drivers and sensors. Use Value: E_AS = 43 mJ withstands repeated inductive turn-off spikes; TO-251 package enables robust mechanical mounting in high-vibration welder chassis.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U server PSU (500–1000 W).

IC Role / Device Role / Timing Role: High-voltage main switch handling 400 V DC bus, operating at 100–200 kHz with zero-voltage switching.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS margin; R_thJC = 1.6 °C/W supports compact heatsink integration.

Use Scenario: DC-link switch in string-level PV inverter MPPT stage or DC-DC boost converter (600–1000 V input).

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost topology, switching at 30–60 kHz.

Use Value: 600 V V_DS rating accommodates 1000 V PV open-circuit surges; avalanche rating handles inductive kick during fault clearing.

Fluorescent Ballast

Industrial Welding

Use Scenario: Half-bridge switch in electronic fluorescent lamp ballast driving 40–60 kHz resonant tank.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch with integrated body diode conducting reverse current during dead-time.

Use Value: t_rr = 230 ns minimizes diode recovery loss and audible noise; low R_DS(on) reduces thermal stress in sealed fixture environments.

Use Scenario: Primary-side switch in IGBT gate driver auxiliary supply or isolated DC-DC for welding inverter control.

IC Role / Device Role / Timing Role: High-reliability 600 V switch in 20–50 kHz flyback or forward converter powering gate drivers and sensors.

Use Value: E_AS = 43 mJ withstands repeated inductive turn-off spikes; TO-251 package enables robust mechanical mounting in high-vibration welder chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 7 A, R_DS(on) = 0.7 Ω, Q_g = 32 nC, TO-220FP package	Higher R_DS(on) and larger TO-220FP footprint; lacks specified E_AS rating	Acceptable where board space allows larger package and avalanche robustness is not required
IPP60R099C7	600 V, 35 A, R_DS(on) = 0.099 Ω, Q_g = 52 nC, TO-220 package	Lower R_DS(on) but higher Q_g and 5× higher cost; designed for >200 W applications	Over-specified for 100–300 W use cases; justified only if future power scaling is planned

Compared with STP7NK60ZFP and IPP60R099C7, SIHU7N60E-GE3 delivers optimal balance of low gate charge, proven avalanche ruggedness, and TO-251 thermal efficiency for mid-power industrial and telecom SMPS-without over-engineering cost or layout complexity.

Availability

SIHU7N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial welding equipment requiring stable component supply across multi-year production cycles.

Supply support for SIHU7N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The SIHU7N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in offline AC/DC power conversion and industrial motor control applications.

FAQ

What is the maximum continuous drain current rating for SIHU7N60E-GE3 at 100 °C case temperature?

The SIHU7N60E-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects derating from its 7 A rating at T_C = 25 °C due to thermal limitations, with a linear derating factor of 0.63 W/°C above 25 °C. Engineers must verify junction temperature rise using R_thJC = 1.6 °C/W under actual operating conditions to ensure safe operation of SIHU7N60E-GE3.

Does SIHU7N60E-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHU7N60E-GE3 is avalanche energy rated with E_AS = 43 mJ (single-pulse). This value is measured per the test condition in Note b: V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, I_AS = 2.5 A. The rating confirms robustness against inductive switching transients without external protection, making SIHU7N60E-GE3 suitable for flyback, forward, and resonant converters where unclamped inductive loads occur.

What is the gate threshold voltage range for SIHU7N60E-GE3, and why does it matter for drive design?

The gate threshold voltage V_GS(th) for SIHU7N60E-GE3 is specified as 2–4 V at V_DS = V_GS, I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity-preventing false triggering from system noise below 2 V. Designers must ensure gate drive voltage exceeds 4 V to guarantee full enhancement, especially at elevated temperatures where V_GS(th) decreases; this behavior is critical for stable operation of SIHU7N60E-GE3 in high-noise industrial environments.

How does the body diode reverse recovery time of SIHU7N60E-GE3 impact its use in half-bridge topologies?

The SIHU7N60E-GE3 body diode has a typical reverse recovery time t_rr of 230 ns at T_J = 25 °C, I_F = 3.5 A, dI/dt = 100 A/μs, and V_R = 20 V. In half-bridge configurations, this value directly affects dead-time optimization and recovery loss. A shorter t_rr reduces overlap conduction loss and EMI generation during commutation-critical for efficiency and EMC compliance. Because SIHU7N60E-GE3's t_rr is well-characterized and stable, it enables predictable timing margins in high-frequency bridge designs.

Is SIHU7N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHU7N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its "-GE3" suffix denotes lead (Pb)-free and halogen-free construction compliant with RoHS and Vishay's material categorization standard (doc# 99912). This makes SIHU7N60E-GE3 suitable for modern automated assembly lines using standard Pb-free reflow profiles without risk of delamination or intermetallic degradation.

SIHU7N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHU7N60E-GE3 FAQ

1.How can I place an order for SIHU7N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHU7N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHU7N60E-GE3 reliable?

The price and inventory of SIHU7N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHU7N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHU7N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHU7N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHU7N60E-GE3?

SIHU7N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHU7N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHU7N60E-GE3?

For technical support, including SIHU7N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHU7N60E-GE3 requirements.

6.How does Aetrix verify that SIHU7N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHU7N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHU7N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHU7N60E-GE3?

All SIHU7N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHU7N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHU7N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHU7N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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