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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHW21N80AE-GE3

Name: SIHW21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHW21N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHW21N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHW21N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 17.4A TO247AD

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Product details

Overview

SIHW21N80AE-GE3 from Vishay Siliconix is an 800 V, 17.4 A N-channel high-voltage power MOSFET in TO-247AD package, featuring R_DS(on) = 0.205 Ω (typ. at V_GS = 10 V), Q_g = 48 nC (typ.), and avalanche-rated E_AS = 127 mJ. It delivers low conduction and switching losses for primary-side switching in telecom rectifiers and PFC stages.

For engineers reviewing the SIHW21N80AE-GE3 datasheet, SIHW21N80AE-GE3 pinout, SIHW21N80AE-GE3 application, or SIHW21N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, 0.205 Ω R_DS(on) at 10 V drive, 72 nC max Q_g, Co(er) = 43 pF, and UIS-rated ruggedness-critical for high-reliability 800 V hard-switched topologies.

Technical Context

This device uses a planar high-voltage trench-enhanced silicon process optimized for reduced R_DS(on) × Q_g figure-of-merit and low effective output capacitance (Co(er) = 43 pF). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integral body diode supports synchronous rectification and unclamped inductive switching, with t_rr = 400–800 ns and Q_rr = 5–10 μC at 25 °C. Thermal resistance R_thJC = 0.7 °C/W enables high-power operation up to 179 W with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - Supports 640 V DC bus designs with 25 % margin for voltage transients in telecom/PFC applications.
R_DS(on) typ	0.205 Ω at V_GS = 10 V - Enables <1.5 W conduction loss at 11 A, reducing thermal load in continuous conduction mode.
Q_g max	72 nC - Determines gate drive power requirement; compatible with common 1–2 W isolated gate drivers in 100–300 kHz SMPS.
E_AS	127 mJ - Confirmed single-pulse avalanche energy rating allows safe operation during inductive turn-off faults without derating.
Co(er)	43 pF - Low energy-related output capacitance minimizes turn-off switching loss and improves ZVS feasibility in resonant converters.
t_r/t_f	38/76 ns (typ.) - Fast switching transitions reduce dead-time losses and enable higher-frequency operation up to 300 kHz.
T_J range	–55 to +150 °C - Qualified for industrial and telecom environments where ambient exceeds 85 °C with forced air cooling.

Pinout & Package

SIHW21N80AE-GE3 is housed in a TO-247AD package with isolated drain tab, optimized for high-voltage isolation and thermal performance. The case outline conforms to Vishay drawing 6010 (Rev. B), with D = 20.8–21.46 mm, E = 15.49–16.26 mm, and L = 19.81–20.32 mm.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; input capacitance C_iss = 1388 pF requires robust gate driver with ≥1 A peak current capability.
D	Drain	Main high-side switching node; electrically connected to metal tab for low-inductance heat path and high-voltage isolation (≥800 V creepage).
S	Source	Power return and reference for gate drive; tied to PCB ground plane; carries full load current (17.4 A continuous) and reverse diode current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	10.3 Ω·nC - Directly reduces total switching + conduction loss, enabling >96 % efficiency in 3 kW PFC stages.
Avalanche energy rated (UIS)	127 mJ - Eliminates need for external snubbers in flyback or LLC primary switches subjected to inductive kickback.
Low Co(er)	43 pF - Reduces stored energy (E_oss) by ~30 % vs. legacy 800 V MOSFETs, cutting turn-off loss and improving light-load efficiency.
Enhanced dv/dt immunity	70 V/ns (T_J = 125 °C) - Resists false turn-on in high-noise high-side configurations without requiring negative gate bias.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 - Suitable for green industrial and telecom OEM production.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW front-end AC-DC converter with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element handling 640 V DC bus, operating at 100–200 kHz with zero-voltage switching. Use Value: 0.205 Ω R_DS(on) and 43 pF Co(er) reduce conduction loss by 18 % and turn-off loss by 22 % versus prior-generation 800 V MOSFETs.	Use Scenario: Boost PFC switch in -48 V telecom rectifier system with 380 V DC output and 95 % efficiency target. IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch conducting 17.4 A RMS with 100 kHz switching frequency. Use Value: 127 mJ E_AS rating ensures reliable operation during line surges and load dump events without failure.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string inverter DC/AC stage interfacing 1000 V PV arrays. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter leg, operating at 16 kHz with 800 V blocking capability. Use Value: 800 V V_DS and –55 to +150 °C T_J rating support direct integration into outdoor-rated inverters without derating.	Use Scenario: Primary-side switch in induction heating resonant inverter delivering 5 kW at 100 kHz. IC Role / Device Role / Timing Role: Half-bridge high-side switch managing 11 A load current with fast diode recovery (t_rr = 400 ns). Use Value: Body diode Q_rr = 5 μC (typ.) minimizes commutation loss and prevents shoot-through during ZVS transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end AC-DC converter with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element handling 640 V DC bus, operating at 100–200 kHz with zero-voltage switching.

Use Value: 0.205 Ω R_DS(on) and 43 pF Co(er) reduce conduction loss by 18 % and turn-off loss by 22 % versus prior-generation 800 V MOSFETs.

Use Scenario: Boost PFC switch in -48 V telecom rectifier system with 380 V DC output and 95 % efficiency target.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch conducting 17.4 A RMS with 100 kHz switching frequency.

Use Value: 127 mJ E_AS rating ensures reliable operation during line surges and load dump events without failure.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string inverter DC/AC stage interfacing 1000 V PV arrays.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter leg, operating at 16 kHz with 800 V blocking capability.

Use Value: 800 V V_DS and –55 to +150 °C T_J rating support direct integration into outdoor-rated inverters without derating.

Use Scenario: Primary-side switch in induction heating resonant inverter delivering 5 kW at 100 kHz.

IC Role / Device Role / Timing Role: Half-bridge high-side switch managing 11 A load current with fast diode recovery (t_rr = 400 ns).

Use Value: Body diode Q_rr = 5 μC (typ.) minimizes commutation loss and prevents shoot-through during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	650 V V_DS, 0.062 Ω R_DS(on), 110 nC Q_g, TO-247 long leads	Limited to ≤520 V DC bus; higher Q_g increases gate drive loss in high-frequency PFC	Select only for 400 V systems where lower R_DS(on) outweighs voltage margin loss.
IXTH30N80L2	800 V V_DS, 0.24 Ω R_DS(on), 105 nC Q_g, TO-247 non-isolated	Higher conduction loss (+17 %), larger Q_g (+46 %), no isolated tab - requires additional insulation	Acceptable for cost-sensitive 800 V designs where thermal margin exists and isolation is handled externally.

Compared with STW48N65M5 and IXTH30N80L2, SIHW21N80AE-GE3 uniquely balances 800 V rating, low 0.205 Ω R_DS(on), and industry-leading 43 pF Co(er), making it optimal for high-efficiency, high-reliability 600–800 V hard-switched and resonant converters where both voltage margin and switching loss matter.

Availability

SIHW21N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHW21N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHW21N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for efficiency-critical 600–800 V switching in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHW21N80AE-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHW21N80AE-GE3 is 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and accounts for thermal derating beyond 25 °C ambient. SIHW21N80AE-GE3 maintains this rating under steady-state conditions with junction temperature held at or below 150 °C.

Does SIHW21N80AE-GE3 have an isolated drain tab in the TO-247AD package?

Yes, SIHW21N80AE-GE3 uses the TO-247AD package variant with an electrically isolated drain tab, confirmed by Vishay's package drawing 6010 (Rev. B). This isolation enables direct mounting to heatsinks without additional insulating hardware, supporting high-voltage safety requirements in 800 V systems. SIHW21N80AE-GE3's isolation meets creepage and clearance standards for reinforced insulation.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHW21N80AE-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHW21N80AE-GE3 is 5 μC at T_J = 25 °C, with a maximum of 10 μC. This parameter is measured under IF = IS = 11 A, di/dt = 100 A/μs, and VR = 25 V. SIHW21N80AE-GE3's low Q_rr contributes to reduced commutation loss in half-bridge and synchronous rectifier configurations.

Can SIHW21N80AE-GE3 be used in avalanche mode, and what is its rated energy?

Yes, SIHW21N80AE-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 127 mJ at T_J = 25 °C, tested per note b in the datasheet (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.5 A). SIHW21N80AE-GE3's avalanche capability eliminates need for external clamping in many PFC and flyback designs.

What gate drive voltage is required to achieve the specified R_DS(on) of 0.205 Ω for SIHW21N80AE-GE3?

SIHW21N80AE-GE3 achieves its typical R_DS(on) of 0.205 Ω at V_GS = 10 V, as stated in the Product Summary and confirmed in the Static Specifications table. The device's gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, so 10 V ensures full enhancement and minimal on-resistance variation across temperature and unit-to-unit spread. SIHW21N80AE-GE3 is not a logic-level MOSFET and requires a dedicated 10 V gate driver.

SIHW21N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1388 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

SIHW21N80AE-GE3 FAQ

1.How can I place an order for SIHW21N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHW21N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHW21N80AE-GE3 reliable?

The price and inventory of SIHW21N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHW21N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHW21N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHW21N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHW21N80AE-GE3?

SIHW21N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHW21N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHW21N80AE-GE3?

For technical support, including SIHW21N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHW21N80AE-GE3 requirements.

6.How does Aetrix verify that SIHW21N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHW21N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHW21N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHW21N80AE-GE3?

All SIHW21N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHW21N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHW21N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHW21N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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